Kexin BAS40-06 Schottky diode Datasheet

Diodes
SMD Type
Schottky Diodes
BAS40/-04/-05/-06
(KAS40/-04/-05/-06)
SOT-23
Unit: mm
+0.1
2.9 -0.1
+0.1
0.4 -0.1
1
0.55
● Fast Switching
+0.1
1.3 -0.1
+0.1
2.4 -0.1
● Low Forward Voltage
0.4
3
■ Features
2
+0.1
0.95 -0.1
+0.1
1.9 -0.1
BAS40-06
0-0.1
BAS40
+0.1
0.38 -0.1
+0.1
0.97 -0.1
+0.05
0.1 -0.01
BAS40-04
BAS40-05
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Symbol
Peak Repetitive Peak Reverse Voltage
VRRM
Working Peak Reverse Voltage
VRWM
Rating
Unit
40
V
mA
DC Blocking Voltage
VR
Forward Continuous Current
IFM
200
Pd
200
mW
RθJA
500
℃/W
TJ
125
Tstg
-55 to 150
Power Dissipation
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
℃
■ Electrical Characteristics Ta = 25℃
Parameter
Symbol
Reverse breakdown voltage
Forward voltage
Test Conditions
VR
IR= 100 uA
VF1
IF= 1mA
Min
Typ
Max
Unit
0.38
V
40
VF2
IF= 40 mA
1
Reverse voltage leakage current
IR1
VR= 30 V
200
nA
Junction capacitance
Cj
VR= 0 V, f= 1 MHz
5
pF
Reverse recovery time
trr
IF=IR=10mA,Irr=1mA, RL=100Ω
5
ns
■ Marking
NO
Marking
BAS40
43 .
BAS40-06
BAS40-05
BAS40-04
46
45
44
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1
Diodes
SMD Type
Schottky Diodes
BAS40/-04/-05/-06
(KAS40/-04/-05/-06)
■ Typical Characterisitics
Forward Characteristics
Reverse
100
Characteristics
100
Ta=100℃
(uA)
Ta=100℃
REVERSE CURRENT IR
FORWARD CURRENT
IF
(mA)
10
10
Ta=25℃
1
1
0.1
Ta=25℃
0.01
0.1
0.0
0.2
0.4
0.6
FORWARD VOLTAGE
0.8
1E-3
1.0
10
20
30
REVERSE VOLTAGE
Capacitance Characteristics
4.0
0
VF (V)
VR
40
(V)
Power Derating Curve
0.25
3.5
(W)
0.20
PD
3.0
POWER DISSIPATION
CAPACITANCE BETWEEN TERMINALS
CT (pF)
Ta=25℃
f=1MHz
2.5
2.0
1.5
1.0
0
5
10
15
REVERSE VOLTAGE
2
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20
VR
25
(V)
30
0.15
0.10
0.05
0.00
0
25
50
75
AMBIENT TEMPERATURE
100
Ta
(℃)
125
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