AO3460 60V N-Channel MOSFET General Description Product Summary The AO3460 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected. VDS (V) = 60V ID = 0.65A (VGS = 10V) RDS(ON) < 1.7Ω (VGS = 10V) RDS(ON) < 2Ω (VGS = 4.5V) ESD protected SOT23 Top View D Bottom View D D G G S S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Maximum Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current A, F Pulsed Drain Current VGS ±20 TA=25°C TA=70°C B ID 0.5 IDM 1.6 Maximum Junction-to-Lead C -55 to 150 Symbol Alpha & Omega Semiconductor, Ltd. W 0.9 Junction and Storage Temperature Range TJ, TSTG t ≤ 10s Steady-State Steady-State A 1.4 PD TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A V 0.65 TA=25°C Power Dissipation A Units V RθJA RθJL Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W www.aosmd.com AO3460 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current Gate Threshold Voltage VDS=VGS ID=250uA ID(ON) On state drain current VGS=10V, VDS=5V 60 1 VDS=0V, VGS=±20V ±10 2.5 3 VGS=4.5V, ID=0.5A 1.6 2 VDS=5V, ID=0.65A 0.8 IS=0.1A,VGS=0V 0.8 Forward Transconductance VSD Diode Forward Voltage IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Ciss Input Capacitance SWITCHING PARAMETERS tD(on) Turn-On DelayTime VGS=10V, VDS=30V, RL=75Ω, RGEN=3Ω µA V Ω Ω S 22 VGS=0V, VDS=30V, f=1MHz µA A 1.7 gFS 1 V 1.2 A 27 pF 6 pF 2 pF 5.3 ns 2.8 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=0.65A, dI/dt=100A/µs, VGS=-9V 11.3 Qrr Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V 7.5 Body Diode Reverse Recovery Time 2.5 1.4 Static Drain-Source On-Resistance Reverse Transfer Capacitance 2.2 1.6 VGS=10V, ID=0.65A Crss 5 1 Units V TJ=55°C RDS(ON) Output Capacitance Max VDS=60V, VGS=0V IDSS Coss Typ 19.7 ns 5.5 ns 14 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev 2: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1 2 0.8 4.5V VDS=0V, VGS=±10V 4V 1 0.6 ID(A) ID (A) 1.5 VDS=5V 10V 6V 25°C 0.4 VDS=VGS ID=250µA 3.5V 0.5 0.2 125°C VGS=3.0V 0 0 0 1 2 3 4 5 0 1 2 3 4 3 Normalized On-Resistance 2.2 2.5 VGS=4.5V 2 1.5 VGS=10V 1 VGS=10V ID=0.65A 1.8 VGS=4.5V ID=0.5 1.4 1.0 0.6 0 0.5 1 1.5 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 0 50 100 150 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 4 1.0E+00 ID=0.65A 125°C 3.5 25°C 1.0E-01 -40°C IS (A) 3 RDS(ON) (Ω ) 5 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Figure 1: On-Region Characteristics RDS(ON) (Ω ) -40°C 2.5 1.0E-02 125°C 1.0E-03 2 25°C 1.0E-04 1.5 1.0E-05 1 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.4 0.8 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 10 VDS=30V ID=0.65A Ciss 25 6 VDS=0V, VGS=±10V 4 VDS=VGS ID=250µA Capacitance (pF) VGS (Volts) 8 20 15 10 2 Coss 5 0 Crss 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 20 10µs 100µs 1ms 10ms RDS(ON) limited 0.100 0.1s 1s 10s DC 0.010 1 VDS (Volts) 10 100 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 8 0 0.0001 0.001 0.1 12 4 TJ(Max)=150°C TC=25°C 0.01 TJ(Max)=150°C TA=25°C 16 Power (W) 1.000 ID (Amps) 20 VDS (Volts) Figure 8: Capacitance Characteristics 10.000 Zθ JA Normalized Transient Thermal Resistance 10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Ton T Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com