AOSMD AO3460 60v n-channel mosfet Datasheet

AO3460
60V N-Channel MOSFET
General Description
Product Summary
The AO3460 uses advanced trench technology to
provide excellent RDS(ON), low gate charge, and
operation with gate voltages as low as 4.5V, in the
small SOT-23 footprint. It can be used for a wide
variety of applications, including load switching, low
current inverters and low current DC-DC converters.
It is ESD protected.
VDS (V) = 60V
ID = 0.65A (VGS = 10V)
RDS(ON) < 1.7Ω (VGS = 10V)
RDS(ON) < 2Ω (VGS = 4.5V)
ESD protected
SOT23
Top View
D
Bottom View
D
D
G
G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Maximum
Drain-Source Voltage
VDS
60
Gate-Source Voltage
Continuous Drain
Current A, F
Pulsed Drain Current
VGS
±20
TA=25°C
TA=70°C
B
ID
0.5
IDM
1.6
Maximum Junction-to-Lead C
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
0.9
Junction and Storage Temperature Range TJ, TSTG
t ≤ 10s
Steady-State
Steady-State
A
1.4
PD
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
V
0.65
TA=25°C
Power Dissipation A
Units
V
RθJA
RθJL
Typ
70
100
63
°C
Max
90
125
80
Units
°C/W
°C/W
°C/W
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AO3460
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
Gate Threshold Voltage
VDS=VGS ID=250uA
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
1
VDS=0V, VGS=±20V
±10
2.5
3
VGS=4.5V, ID=0.5A
1.6
2
VDS=5V, ID=0.65A
0.8
IS=0.1A,VGS=0V
0.8
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
SWITCHING PARAMETERS
tD(on)
Turn-On DelayTime
VGS=10V, VDS=30V, RL=75Ω,
RGEN=3Ω
µA
V
Ω
Ω
S
22
VGS=0V, VDS=30V, f=1MHz
µA
A
1.7
gFS
1
V
1.2
A
27
pF
6
pF
2
pF
5.3
ns
2.8
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=0.65A, dI/dt=100A/µs, VGS=-9V
11.3
Qrr
Body Diode Reverse Recovery Charge IF=0.65A, dI/dt=100A/µs, VGS=-9V
7.5
Body Diode Reverse Recovery Time
2.5
1.4
Static Drain-Source On-Resistance
Reverse Transfer Capacitance
2.2
1.6
VGS=10V, ID=0.65A
Crss
5
1
Units
V
TJ=55°C
RDS(ON)
Output Capacitance
Max
VDS=60V, VGS=0V
IDSS
Coss
Typ
19.7
ns
5.5
ns
14
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t ≤ 10s thermal resistance rating.
Rev 2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1
2
0.8
4.5V
VDS=0V, VGS=±10V
4V
1
0.6
ID(A)
ID (A)
1.5
VDS=5V
10V
6V
25°C
0.4
VDS=VGS ID=250µA
3.5V
0.5
0.2
125°C
VGS=3.0V
0
0
0
1
2
3
4
5
0
1
2
3
4
3
Normalized On-Resistance
2.2
2.5
VGS=4.5V
2
1.5
VGS=10V
1
VGS=10V
ID=0.65A
1.8
VGS=4.5V
ID=0.5
1.4
1.0
0.6
0
0.5
1
1.5
-50
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
0
50
100
150
200
Temperature (°C)
Figure 4: On-Resistance vs. Junction
Temperature
4
1.0E+00
ID=0.65A
125°C
3.5
25°C
1.0E-01
-40°C
IS (A)
3
RDS(ON) (Ω )
5
VGS(Volts)
Figure 2: Transfer Characteristics
VDS (Volts)
Figure 1: On-Region Characteristics
RDS(ON) (Ω )
-40°C
2.5
1.0E-02
125°C
1.0E-03
2
25°C
1.0E-04
1.5
1.0E-05
1
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.4
0.8
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics
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AO3460
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30
10
VDS=30V
ID=0.65A
Ciss
25
6
VDS=0V, VGS=±10V
4
VDS=VGS ID=250µA
Capacitance (pF)
VGS (Volts)
8
20
15
10
2
Coss
5
0
Crss
0
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
30
40
50
60
20
10µs
100µs
1ms
10ms
RDS(ON)
limited
0.100
0.1s
1s
10s
DC
0.010
1
VDS (Volts)
10
100
1
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
10
8
0
0.0001
0.001
0.1
12
4
TJ(Max)=150°C
TC=25°C
0.01
TJ(Max)=150°C
TA=25°C
16
Power (W)
1.000
ID (Amps)
20
VDS (Volts)
Figure 8: Capacitance Characteristics
10.000
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD
0.01
Ton
T
Single Pulse
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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