IPA60R165CP CoolMOSTM Power Transistor Product Summary Features V DS @ Tj,max • Lowest figure-of-merit R ONxQg 650 0.165 Ω R DS(on),max • Ultra low gate charge V Q g,typ 39 nC • Extreme dv/dt rated • High peak current capability • Qualified according to JEDEC1) for target applications PG-TO220-3-31 • Pb-free lead plating; RoHS compliant CoolMOS CP is specially designed for: • Hard switching SMPS topologies Type Package IPA60R165CP PG-TO220-3-31 Ordering Code SP000096437 Marking 6R165P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current 2) ID Value T C=25 °C 21 T C=100 °C 13 Pulsed drain current3) I D,pulse T C=25 °C 61 Avalanche energy, single pulse E AS I D=7.9 A, V DD=50 V 522 Avalanche energy, repetitive t AR3),4) E AR I D=7.9 A, V DD=50 V 0.79 Avalanche current, repetitive t AR3),4) I AR MOSFET dv /dt ruggedness dv /dt Gate source voltage V GS Power dissipation P tot Operating and storage temperature T j, T stg Mounting torque Rev. 1.3 Unit A mJ 7.9 A V DS=0...480 V 50 V/ns static ±20 V AC (f >1 Hz) ±30 T C=25 °C 34 W -55 ... 150 °C M2.5 screws page 1 50 Ncm 2005-12-22 IPA60R165CP Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous diode forward current 2) IS Diode pulse curren 3) I S,pulse Reverse diode dv /dt 5) dv /dt Parameter Symbol Conditions Value Unit 21 T C=25 °C A 61 min. 15 V/ns Values Unit typ. max. Thermal characteristics Thermal resistance, junction - case R thJC Thermal resistance, junction ambient R thJA leaded - - 80 Soldering temperature, wavesoldering only allowed at leads T sold 1.6 mm (0.063 in.) from case for 10 s - - 260 °C V - 3.65 K/W Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=250 µA 600 - - Gate threshold voltage V GS(th) V DS=V GS, I D=0.79 mA 2.5 3 3.5 Zero gate voltage drain current I DSS V DS=600 V, V GS=0 V, T j=25 °C - - 1 V DS=25 V, V GS=0 V, T j=150 °C - 10 - µA Gate-source leakage current I GSS V GS=20 V, V DS=0 V - - 100 nA Drain-source on-state resistance R DS(on) V GS=10 V, I D=12 A, T j=25 °C - 0.15 0.165 Ω V GS=10 V, I D=12 A, T j=150 °C - 0.40 - f =1 MHz, open drain - 1.9 - Gate resistance Rev. 1.3 RG page 2 Ω 2005-12-22 IPA60R165CP Parameter Values Symbol Conditions Unit min. typ. max. - 2000 - - 100 - - 83 - Dynamic characteristics Input capacitance C iss Output capacitance C oss Effective output capacitance, energy related6) C o(er) Effective output capacitance, time related7) C o(tr) - 220 - Turn-on delay time t d(on) - 12 - Rise time tr - 5 - Turn-off delay time t d(off) - 50 - Fall time tf - 5 - Gate to source charge Q gs - 9 - Gate to drain charge Q gd - 13.0 - Gate charge total Qg - 39 52 Gate plateau voltage V plateau - 5.0 - V - 0.9 1.2 V - 390 - ns - 7.5 - µC - 38 - A V GS=0 V, V DS=100 V, f =1 MHz pF V GS=0 V, V DS=0 V to 480 V V DD=400 V, V GS=10 V, I D=12 A, R G=3.3 Ω ns Gate Charge Characteristics V DD=400 V, I D=12 A, V GS=0 to 10 V nC Reverse Diode Diode forward voltage V SD Reverse recovery time t rr Reverse recovery charge Q rr Peak reverse recovery current I rrm V GS=0 V, I F=12 A, T j=25 °C V R=400 V, I F=I S, di F/dt =100 A/µs 1) J-STD20 and JESD22 2) Pulse width t p limited by T j,max 3) Limited only by maximum temperature 4) Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f. 5) ISD<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch. 6) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS. 7) C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS. Rev. 1.3 page 3 2005-12-22 IPA60R165CP 1 Power dissipation 2 Safe operating area P tot=f(T C) I D=f(V DS); T C=25 °C; D =0 parameter: t p 102 40 limited by on-state resistance 10 µs 30 1 µs 100 µs 101 I D [A] P tot [W] 1 ms 20 10 ms 100 DC 10 10-1 0 0 40 80 120 100 160 101 T C [°C] 102 103 V DS [V] 3 Max. transient thermal impedance 4 Typ. output characteristics ZthJC=f(tp) I D=f(V DS); T j=25 °C parameter: D=t p/T parameter: V GS 101 80 10V 12 V 20 V 60 0.5 8V 100 I D [A] Z thJC [K/W] 0.2 0.1 40 6V 0.05 10 -1 0.02 5.5 V 20 0.01 5V 4.5 V single pulse 10-2 10-5 0 10-4 10-3 10-2 10-1 100 101 Rev. 1.3 0 5 10 15 20 25 V DS [V] t p [s] page 4 2005-12-22 IPA60R165CP 5 Typ. output characteristics 6 Typ. drain-source on-state resistance I D=f(V DS); T j=150 °C R DS(on)=f(I D); T j=150 °C parameter: V GS parameter: V GS 40 1.2 20 V 10 V 8V 12 V 6.5 V 6V 1 5.5 V 30 6V 5V R DS(on) [Ω] I D [A] 10 V 0.8 5.5 V 20 5V 7V 0.6 0.4 4.5 V 10 0.2 0 0 0 5 10 15 20 25 0 10 20 30 40 50 I D [A] V DS [V] 7 Drain-source on-state resistance 8 Typ. transfer characteristics R DS(on)=f(T j); I D=12 A; V GS=10 V I D=f(V GS); |V DS|>2|I D|R DS(on)max 0.5 100 0.4 80 0.3 60 98% 0.2 40 typ C °150 20 0.1 0 0 -60 -20 20 60 100 140 180 T j [°C] Rev. 1.3 C °25 I D [A] R DS(on) [Ω] parameter: T j 0 2 4 6 8 10 V GS [V] page 5 2005-12-22 IPA60R165CP 9 Typ. gate charge 10 Forward characteristics of reverse diode V GS=f(Q gate); I D=12 A pulsed I F=f(V SD) parameter: V DD parameter: T j 102 10 25 °C, 98% 8 150 °C, 98% 120 V 25 °C 150 °C 101 400 V I F [A] V GS [V] 6 4 100 2 10-1 0 0 10 20 30 0 40 0.5 1 Q gate [nC] 1.5 2 V SD [V] 11 Avalanche energy 12 Drain-source breakdown voltage E AS=f(T j); I D=7.9 A; V DD=50 V V BR(DSS)=f(T j); I D=0.25 mA 600 700 660 E AS [mJ] V BR(DSS) [V] 400 620 200 580 0 540 20 60 100 140 180 T j [°C] Rev. 1.3 -60 -20 20 60 100 140 180 T j [°C] page 6 2005-12-22 IPA60R165CP 13 Typ. capacitances 14 Typ. Coss stored energy C =f(V DS); V GS=0 V; f =1 MHz E oss= f(V DS) 105 14 12 104 10 Ciss C [pF] E oss [µJ] 103 Coss 102 8 6 4 10 1 2 Crss 100 0 0 100 200 300 400 500 Rev. 1.3 0 100 200 300 400 500 600 V DS [V] V DS [V] page 7 2005-12-22 IPA60R165CP Definition of diode switching characteristics Rev. 1.3 page 8 2005-12-22 IPA60R165CP PG-TO220-3-31: Outline/Fully isolated package (2500VAC; 1 minute) Dimensions in mm/inches Rev. 1.3 page 9 2005-12-22 IPA60R165CP Published by Infineon Technologies AG Bereich Kommunikation St.-Martin-Straße 53 D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. 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If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.3 page 10 2005-12-22