Infineon IPA60R165CP Coolmos power transistor Datasheet

IPA60R165CP
CoolMOSTM Power Transistor
Product Summary
Features
V DS @ Tj,max
• Lowest figure-of-merit R ONxQg
650
0.165 Ω
R DS(on),max
• Ultra low gate charge
V
Q g,typ
39
nC
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC1) for target applications
PG-TO220-3-31
• Pb-free lead plating; RoHS compliant
CoolMOS CP is specially designed for:
• Hard switching SMPS topologies
Type
Package
IPA60R165CP
PG-TO220-3-31
Ordering Code
SP000096437
Marking
6R165P
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current 2)
ID
Value
T C=25 °C
21
T C=100 °C
13
Pulsed drain current3)
I D,pulse
T C=25 °C
61
Avalanche energy, single pulse
E AS
I D=7.9 A, V DD=50 V
522
Avalanche energy, repetitive t AR3),4)
E AR
I D=7.9 A, V DD=50 V
0.79
Avalanche current, repetitive t AR3),4)
I AR
MOSFET dv /dt ruggedness
dv /dt
Gate source voltage
V GS
Power dissipation
P tot
Operating and storage temperature
T j, T stg
Mounting torque
Rev. 1.3
Unit
A
mJ
7.9
A
V DS=0...480 V
50
V/ns
static
±20
V
AC (f >1 Hz)
±30
T C=25 °C
34
W
-55 ... 150
°C
M2.5 screws
page 1
50
Ncm
2005-12-22
IPA60R165CP
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous diode forward current 2)
IS
Diode pulse curren 3)
I S,pulse
Reverse diode dv /dt 5)
dv /dt
Parameter
Symbol Conditions
Value
Unit
21
T C=25 °C
A
61
min.
15
V/ns
Values
Unit
typ.
max.
Thermal characteristics
Thermal resistance, junction - case
R thJC
Thermal resistance, junction ambient
R thJA
leaded
-
-
80
Soldering temperature,
wavesoldering only allowed at leads
T sold
1.6 mm (0.063 in.)
from case for 10 s
-
-
260
°C
V
-
3.65
K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=250 µA
600
-
-
Gate threshold voltage
V GS(th)
V DS=V GS, I D=0.79 mA
2.5
3
3.5
Zero gate voltage drain current
I DSS
V DS=600 V, V GS=0 V,
T j=25 °C
-
-
1
V DS=25 V, V GS=0 V,
T j=150 °C
-
10
-
µA
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
-
100
nA
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=12 A,
T j=25 °C
-
0.15
0.165
Ω
V GS=10 V, I D=12 A,
T j=150 °C
-
0.40
-
f =1 MHz, open drain
-
1.9
-
Gate resistance
Rev. 1.3
RG
page 2
Ω
2005-12-22
IPA60R165CP
Parameter
Values
Symbol Conditions
Unit
min.
typ.
max.
-
2000
-
-
100
-
-
83
-
Dynamic characteristics
Input capacitance
C iss
Output capacitance
C oss
Effective output capacitance, energy
related6)
C o(er)
Effective output capacitance, time
related7)
C o(tr)
-
220
-
Turn-on delay time
t d(on)
-
12
-
Rise time
tr
-
5
-
Turn-off delay time
t d(off)
-
50
-
Fall time
tf
-
5
-
Gate to source charge
Q gs
-
9
-
Gate to drain charge
Q gd
-
13.0
-
Gate charge total
Qg
-
39
52
Gate plateau voltage
V plateau
-
5.0
-
V
-
0.9
1.2
V
-
390
-
ns
-
7.5
-
µC
-
38
-
A
V GS=0 V, V DS=100 V,
f =1 MHz
pF
V GS=0 V, V DS=0 V
to 480 V
V DD=400 V,
V GS=10 V, I D=12 A,
R G=3.3 Ω
ns
Gate Charge Characteristics
V DD=400 V, I D=12 A,
V GS=0 to 10 V
nC
Reverse Diode
Diode forward voltage
V SD
Reverse recovery time
t rr
Reverse recovery charge
Q rr
Peak reverse recovery current
I rrm
V GS=0 V, I F=12 A,
T j=25 °C
V R=400 V, I F=I S,
di F/dt =100 A/µs
1)
J-STD20 and JESD22
2)
Pulse width t p limited by T j,max
3)
Limited only by maximum temperature
4)
Repetitive avalanche causes additional power losses that can be calculated as P AV=E AR*f.
5)
ISD<=ID, di/dt<=200A/µs, VDClink=400V, Vpeak<V(BR)DSS, Tj<Tjmax, identical low side and high side switch.
6)
Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS.
7)
C o(tr) is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS.
Rev. 1.3
page 3
2005-12-22
IPA60R165CP
1 Power dissipation
2 Safe operating area
P tot=f(T C)
I D=f(V DS); T C=25 °C; D =0
parameter: t p
102
40
limited by on-state
resistance
10 µs
30
1 µs
100 µs
101
I D [A]
P tot [W]
1 ms
20
10 ms
100
DC
10
10-1
0
0
40
80
120
100
160
101
T C [°C]
102
103
V DS [V]
3 Max. transient thermal impedance
4 Typ. output characteristics
ZthJC=f(tp)
I D=f(V DS); T j=25 °C
parameter: D=t p/T
parameter: V GS
101
80
10V
12 V
20 V
60
0.5
8V
100
I D [A]
Z thJC [K/W]
0.2
0.1
40
6V
0.05
10
-1
0.02
5.5 V
20
0.01
5V
4.5 V
single pulse
10-2
10-5
0
10-4
10-3
10-2
10-1
100
101
Rev. 1.3
0
5
10
15
20
25
V DS [V]
t p [s]
page 4
2005-12-22
IPA60R165CP
5 Typ. output characteristics
6 Typ. drain-source on-state resistance
I D=f(V DS); T j=150 °C
R DS(on)=f(I D); T j=150 °C
parameter: V GS
parameter: V GS
40
1.2
20 V
10 V
8V
12 V
6.5 V
6V
1
5.5 V
30
6V
5V
R DS(on) [Ω]
I D [A]
10 V
0.8
5.5 V
20
5V
7V
0.6
0.4
4.5 V
10
0.2
0
0
0
5
10
15
20
25
0
10
20
30
40
50
I D [A]
V DS [V]
7 Drain-source on-state resistance
8 Typ. transfer characteristics
R DS(on)=f(T j); I D=12 A; V GS=10 V
I D=f(V GS); |V DS|>2|I D|R DS(on)max
0.5
100
0.4
80
0.3
60
98%
0.2
40
typ
C °150
20
0.1
0
0
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.3
C °25
I D [A]
R DS(on) [Ω]
parameter: T j
0
2
4
6
8
10
V GS [V]
page 5
2005-12-22
IPA60R165CP
9 Typ. gate charge
10 Forward characteristics of reverse diode
V GS=f(Q gate); I D=12 A pulsed
I F=f(V SD)
parameter: V DD
parameter: T j
102
10
25 °C, 98%
8
150 °C, 98%
120 V
25 °C
150 °C
101
400 V
I F [A]
V GS [V]
6
4
100
2
10-1
0
0
10
20
30
0
40
0.5
1
Q gate [nC]
1.5
2
V SD [V]
11 Avalanche energy
12 Drain-source breakdown voltage
E AS=f(T j); I D=7.9 A; V DD=50 V
V BR(DSS)=f(T j); I D=0.25 mA
600
700
660
E AS [mJ]
V BR(DSS) [V]
400
620
200
580
0
540
20
60
100
140
180
T j [°C]
Rev. 1.3
-60
-20
20
60
100
140
180
T j [°C]
page 6
2005-12-22
IPA60R165CP
13 Typ. capacitances
14 Typ. Coss stored energy
C =f(V DS); V GS=0 V; f =1 MHz
E oss= f(V DS)
105
14
12
104
10
Ciss
C [pF]
E oss [µJ]
103
Coss
102
8
6
4
10
1
2
Crss
100
0
0
100
200
300
400
500
Rev. 1.3
0
100
200
300
400
500
600
V DS [V]
V DS [V]
page 7
2005-12-22
IPA60R165CP
Definition of diode switching characteristics
Rev. 1.3
page 8
2005-12-22
IPA60R165CP
PG-TO220-3-31: Outline/Fully isolated package (2500VAC; 1 minute)
Dimensions in mm/inches
Rev. 1.3
page 9
2005-12-22
IPA60R165CP
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
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Rev. 1.3
page 10
2005-12-22
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