ON MBR40H100WT Switchmodeâ ¢ power rectifier Datasheet

MBR40H100WT
SWITCHMODE™
Power Rectifier
100 V, 40 A
Features and Benefits
•
•
•
•
•
•
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Low Forward Voltage
Low Power Loss/High Efficiency
High Surge Capacity
175°C Operating Junction Temperature
40 A Total (20 A Per Diode Leg)
This is a Pb−Free Device
SCHOTTKY BARRIER
RECTIFIER
40 AMPERES
100 VOLTS
1
Applications
• Power Supply − Output Rectification
• Power Management
• Instrumentation
2, 4
3
Mechanical Characteristics:
•
•
•
•
•
Case: Epoxy, Molded
Epoxy Meets UL 94 V−0 @ 0.125 in
Weight: 4.3 Grams (Approximately)
Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
Lead Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
TO−247AC
CASE 340L
STYLE 2
MARKING DIAGRAM
MAXIMUM RATINGS
Please See the Table on the Following Page
B40H100
AYWWG
B40H100
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
© Semiconductor Components Industries, LLC, 2010
March, 2010 − Rev. 4
1
Device
Package
Shipping
MBR40H100WTG
TO−247
(Pb−Free)
30 Units/Rail
Publication Order Number:
MBR40H100WT/D
MBR40H100WT
MAXIMUM RATINGS (Per Diode Leg)
Symbol
Value
Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Rating
VRRM
VRWM
VR
100
V
Average Rectified Forward Current
TC = 148°C, per Diode
TC = 150°C, per Device
IF(AV)
Peak Repetitive Forward Current
(Square Wave, 20 kHz) TC = 144°C
IFRM
40
A
Nonrepetitive Peak Surge Current
(Surge applied at rated load conditions halfwave, single phase, 60 Hz)
IFSM
200
A
Operating Junction Temperature (Note 1)
TJ
+175
°C
Storage Temperature
Tstg
*65 to +175
°C
Voltage Rate of Change (Rated VR)
dv/dt
10,000
V/ms
WAVAL
400
mJ
> 400
> 8000
V
0.58
32
°C/W
Controlled Avalanche Energy (see test conditions in Figures 10 and 11)
A
20
40
ESD Ratings: Machine Model = C
Human Body Model = 3B
THERMAL CHARACTERISTICS
Maximum Thermal Resistance − Junction−to−Case
− Junction−to−Ambient (Socket Mounted)
RqJC
RqJA
ELECTRICAL CHARACTERISTICS
Characterisitc
Symbol
Instantaneous Forward Voltage (Note 2)
(IF = 20 A, TJ = 25°C)
(IF = 20 A, TJ = 125°C)
(IF = 40 A, TJ = 25°C)
(IF = 40 A, TJ = 125°C)
vF
Instantaneous Reverse Current (Note 2)
(Rated dc Voltage, TJ = 125°C)
(Rated dc Voltage, TJ = 25°C)
iR
Min
Typ
Max
−
−
−
−
0.74
0.61
0.85
0.72
0.80
0.67
0.90
0.76
−
−
2.0
0.0012
10
0.01
Unit
V
mA
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The heat generated must be less than the thermal conductivity from Junction−to−Ambient: dPD/dTJ < 1/RqJA.
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
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2
100
IF, INSTANTANEOUS FORWARD CURRENT (A)
IF, INSTANTANEOUS FORWARD CURRENT (A)
MBR40H100WT
175°C
150°C
10
25°C
125°C
1.0
0.1
0
0.1 0.2 0.3 0.4 0.5 0.6
0.7 0.8 0.9 1.0 1.1
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
100
175°C
150°C
10
125°C
1.0
0.1
0
Figure 2. Maximum Forward Voltage
1.0E−01
IR, MAXIMUM REVERSE CURRENT (A)
1.0E−01
IR, REVERSE CURRENT (A)
TJ = 125°C
1.0E−04
1.0E−05
1.0E−05
TJ = 25°C
1.0E−06
1.0E−07
1.0E−08
0
20
40
60
80
100
1.0E−08
0
20
40
60
80
VR, REVERSE VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 3. Typical Reverse Current
Figure 4. Maximum Reverse Current
32
IF(AV), AVERAGE FORWARD CURRENT (A)
IF, AVERAGE FORWARD CURRENT (A)
TJ = 25°C
1.0E−06
1.0E−07
dc
28
Square Wave
20
16
12
8.0
4.0
120
TJ = 125°C
1.0E−03
1.0E−04
0
TJ = 150°C
1.0E−02
TJ = 150°C
1.0E−03
24
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 1. Typical Forward Voltage
1.0E−02
25°C
130
140
150
160
170
180
100
20
RqJA = 16°C/W
18
16
dc
14
12
Square Wave
10
8.0
6.0
4.0
2.0
0
dc
RqJA = 60°C/W
No Heatsink
0
25
50
Square Wave
75
100
125
150
175
TC, CASE TEMPERATURE (°C)
TA, AMBIENT TEMPERATURE (°C)
Figure 5. Current Derating, Case, Per Leg
Figure 6. Current Derating, Ambient, Per Leg
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3
R(t), TRANSIENT THERMAL RESISTANCE
10000
30
28
TJ = 25°C
TJ = 175°C
24
C, CAPACITANCE (pF)
PF(AV), AVERAGE POWER DISSIPATION (W)
MBR40H100WT
Square Wave
20
dc
16
12
8.0
1000
100
4.0
0
10
4.0
0
8.0
12
16
20
28 30
24
0
40
20
80
60
IF(AV), AVERAGE FORWARD CURRENT (A)
VR, REVERSE VOLTAGE (V)
Figure 7. Forward Power Dissipation
Figure 8. Capacitance
100
10
1
0.1
D = 0.5
0.2
0.1
0.05
0.01
P(pk)
t1
0.01
t2
SINGLE PULSE
0.001
0.000001
0.00001
DUTY CYCLE, D = t1/t2
0.0001
0.001
0.01
0.1
1
t1, TIME (sec)
Figure 9. Thermal Response Junction−to−Case
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4
10
100
1000
MBR40H100WT
+VDD
IL
10 mH COIL
BVDUT
VD
MERCURY
SWITCH
ID
ID
IL
DUT
S1
VDD
t0
Figure 10. Test Circuit
t1
t2
t
Figure 11. Current−Voltage Waveforms
elements are small Equation (1) approximates the total
energy transferred to the diode. It can be seen from this
equation that if the VDD voltage is low compared to the
breakdown voltage of the device, the amount of energy
contributed by the supply during breakdown is small and the
total energy can be assumed to be nearly equal to the energy
stored in the coil during the time when S1 was closed,
Equation (2).
The unclamped inductive switching circuit shown in
Figure 10 was used to demonstrate the controlled avalanche
capability of this device. A mercury switch was used instead
of an electronic switch to simulate a noisy environment
when the switch was being opened.
When S1 is closed at t0 the current in the inductor IL ramps
up linearly; and energy is stored in the coil. At t1 the switch
is opened and the voltage across the diode under test begins
to rise rapidly, due to di/dt effects, when this induced voltage
reaches the breakdown voltage of the diode, it is clamped at
BVDUT and the diode begins to conduct the full load current
which now starts to decay linearly through the diode, and
goes to zero at t2.
By solving the loop equation at the point in time when S1
is opened; and calculating the energy that is transferred to
the diode it can be shown that the total energy transferred is
equal to the energy stored in the inductor plus a finite amount
of energy from the VDD power supply while the diode is in
breakdown (from t1 to t2) minus any losses due to finite
component resistances. Assuming the component resistive
EQUATION (1):
ǒ
BV
2
DUT
W
[ 1 LI LPK
AVAL
2
V
BV
DUT DD
EQUATION (2):
2
W
[ 1 LI LPK
AVAL
2
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5
Ǔ
MBR40H100WT
PACKAGE DIMENSIONS
TO−247
CASE 340L−02
ISSUE E
−T−
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
C
−B−
E
U
N
L
4
A
−Q−
1
2
0.63 (0.025)
3
M
T B
M
P
−Y−
K
F 2 PL
W
J
D 3 PL
0.25 (0.010)
M
Y Q
MILLIMETERS
MIN
MAX
20.32
21.08
15.75
16.26
4.70
5.30
1.00
1.40
1.90
2.60
1.65
2.13
5.45 BSC
1.50
2.49
0.40
0.80
19.81
20.83
5.40
6.20
4.32
5.49
--4.50
3.55
3.65
6.15 BSC
2.87
3.12
STYLE 2:
PIN 1.
2.
3.
4.
H
G
DIM
A
B
C
D
E
F
G
H
J
K
L
N
P
Q
U
W
S
INCHES
MIN
MAX
0.800
8.30
0.620
0.640
0.185
0.209
0.040
0.055
0.075
0.102
0.065
0.084
0.215 BSC
0.059
0.098
0.016
0.031
0.780
0.820
0.212
0.244
0.170
0.216
--0.177
0.140
0.144
0.242 BSC
0.113
0.123
ANODE
CATHODE (S)
ANODE 2
CATHODES (S)
SWITCHMODE is a trademark of Semiconductor Components Industries, LLC.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
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“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
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MBR40H100WT/D
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