CEL NE46234-AZ Npn epitaxial silicon rf transistor for high-frequency low distortion amplifier 3-pin power minimold Datasheet

NPN SILICON RF TRANSISTOR
NE46234 / 2SC4703
NPN EPITAXIAL SILICON RF TRANSISTOR FOR
HIGH-FREQUENCY LOW DISTORTION AMPLIFIER
3-PIN POWER MINIMOLD
DESCRIPTION
The NE46234 / 2SC4703 is designed for low distortion, low noise RF amplifier operating with low supply voltage
(VCE = 5 V). This low distortion characteristic makes it suitable for CATV, tele-communication and other use. It
employs surface mount type plastic package, power mini mold (SOT-89).
FEATURES
• Low distortion, low voltage: IM2 = 55 dBc TYP., IM3 = 76 dBc TYP. @ VCE = 5 V, IC = 50 mA, VO = 105 dBV/75
• Large Ptot : Ptot = 1.8 W (Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate)
2
• Small package : 3-pin power mini mold package
ORDERING INFORMATION
Part Number
Quantity
Supplying Form
NE46234-AZ
2SC4703
25 pcs (Non reel)
• 12 mm wide embossed taping
NE46234-T1-AZ
2SC4703-T1
1 kpcs/reel
• Collector face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 25 pcs.
ABSOLUTE MAXIMUM RATINGS (TA = +25C)
Parameter
Symbol
Ratings
Unit
Collector to Base Voltage
VCBO
25
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
2.5
V
IC
150
mA
1.8
W
Collector Current
Total Power Dissipation
Ptot
Note
Junction Temperature
Tj
150
C
Storage Temperature
Tstg
65 to +150
C
Note Mounted on double-sided copper-clad 16 cm  0.7 mm (t) ceramic substrate
2
Document No. PU10339EJ01V1DS (1st edition)
Date Published May 2003 CP(K)
The mark  shows major revised points.
NE46234 / 2SC4703
ELECTRICAL CHARACTERISTICS (TA = +25C)
Parameter
Symbol
Test Conditions
MIN.
TYP.
MAX.
Unit
DC Characteristics
Collector Cut-off Current
ICBO
VCB = 20 V, IE = 0 mA
–
–
1.5
A
Emitter Cut-off Current
IEBO
VEB = 2 V, IC = 0 mA
–
–
1.5
A
Note 1
VCE = 5 V, IC = 50 mA
50
–
250
–
Gain Bandwidth Product
fT
VCE = 5 V, IC = 50 mA
–
6.0
–
GHz
Insertion Power Gain (1)
S21e
VCE = 5 V, IC = 50 mA, f = 1 GHz
6.5
8.3
–
dB
Insertion Power Gain (2)
S21e2
VCE = 10 V, IC = 20 mA, f = 1 GHz
–
8.5
–
dB
NF
VCE = 5 V, IC = 50 mA, f = 1 GHz
–
2.3
3.5
dB
VCB = 5 V, IE = 0 mA, f = 1 MHz
–
1.5
2.5
pF
IC = 50 mA,
VO = 105 dBV/75 ,
f = 190  90 MHz
VCE = 5 V
–
55
–
dBc
63
–
IC = 50 mA,
VO = 105 dBV/75 ,
f = 2  190  200 MHz
VCE = 5 V
–
76
–
VCE = 10 V
–
81
–
hFE
DC Current Gain
RF Characteristics
2
Noise Figure
Cob
Collector Capacitance
2nd Order Intermoduration Distortion
3rd Order Intermoduration Distortion
Note 2
IM2
IM3
VCE = 10 V
Notes 1. Pulse measurement: PW  350 s, Duty Cycle  2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
2
Rank
SH
SF
SE
Marking
SH
SF
SE
hFE Value
50 to 100
80 to 160
125 to 250
Data Sheet PU10339EJ01V1DS
dBc
NE46234 / 2SC4703
TYPICAL CHARACTERISTICS (TA = +25C)
Data Sheet PU10339EJ01V1DS
3
NE46234 / 2SC4703
Remark The graphs indicate nominal characteristics.
S-PARAMETERS
4
Data Sheet PU10339EJ01V1DS
NE46234 / 2SC4703
PACKAGE DIMENSIONS
3-PIN POWER MINIMOLD (UNIT: mm)
Data Sheet PU10339EJ01V1DS
5
NE46234 / 2SC4703
6
Data Sheet PU10339EJ01V1DS
NE46234 / 2SC4703