ATP101 Ordering number : ENA1646A SANYO Semiconductors DATA SHEET ATP101 P-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --25 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 25 mJ --13 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --75 A 30 W °C Note : *1 VDD=--10V, L=200μH, IAV=--13A *2 L≤200μH, Single pulse Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP101-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP101 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 2.3 0.6 2.3 0.55 0.7 3 0.1 0.5 1 1.7 4,2 2 0.4 1 : Gate 2 : Drain 3 : Source 4 : Drain 1 3 SANYO : ATPAK http://semicon.sanyo.com/en/network 61312 TKIM/12710PA TKIM TC-00002233 No.A1646-1/7 ATP101 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS IDSS Conditions Ratings min --30 IGSS VGS(off) | yfs | ID=--1mA, VGS=0V VDS=--30V, VGS=0V VGS=±16V, VDS=0V VDS=--10V, ID=--1mA VDS=--10V, ID=--13A --1.2 Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 ID=--13A, VGS=--10V ID=--7A, VGS=--4.5V Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance typ Unit max V --1 μA ±10 μA --2.6 17 V S 23 30 mΩ 36 51 mΩ 875 pF 220 pF Crss 155 pF 9.2 ns Rise Time td(on) tr 70 ns Turn-OFF Delay Time td(off) 80 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--25A IS=--25A, VGS=0V 70 ns 18.5 nC 3.2 nC 4.0 nC --0.99 --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --13A RL=1.15Ω VIN D PW=10μs D.C.≤1% VOUT G ATP101 P.G 50Ω S Ordering Information Device ATP101-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No.A1646-2/7 ATP101 ID -- VDS V --4.0V Tc= --25 °C 7 5 °C 25° C VDS= --10V Single pulse .5 --25 --10 --5 --15 --10 5°C VGS= --3.5V --20 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 60 50 ID= --7A --13A 40 30 20 Gate-to-Source Voltage, VGS -- V Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S C 5° = Tc 5 --2 °C 75 3 2 1.0 7 5 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A Switching Time, SW Time -- ns 2 7 --4.0 --4.5 7A = -VGS 40 A = --13 V, I D 30 --10 V GS= 20 10 --40 --20 0 20 40 60 80 100 120 140 160 IT15315 IS -- VSD VGS=0V Single pulse --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.4 --0.6 --0.8 --1.0 --1.2 Diode Forward Voltage, VSD -- V SW Time -- ID --5.0 IT15313 = -, ID 4.5V 50 IT15316 --1.4 IT15317 Ciss, Coss, Crss -- VDS 3 VDD= --15V VGS= --10V f=1MHz 2 td(off) 100 7 tf 5 3 tr 2 1000 Ciss 7 5 3 Coss 2 Crss td(on) 10 100 7 5 --0.1 --3.5 60 --0.01 7 5 3 2 --0.001 --0.2 Ciss, Coss, Crss -- pF 3 5 --3.0 Case Temperature, Tc -- °C 3 7 --2.5 70 7 5 3 2 °C 25 --2.0 Single pulse 0 --60 VDS= --10V 10 --1.5 RDS(on) -- Tc IT15314 | yfs | -- ID 2 --1.0 Gate-to-Source Voltage, VGS -- V 10 --1 --2 --3 --4 --5 --6 --7 --8 --9 --10 --11 --12 --13 --14 --15 --16 5 --0.5 80 Tc=25°C Single pulse 70 0 IT15312 RDS(on) -- VGS 80 0 --2.0 C --1.5 --25° --1.0 25°C --0.5 Tc= 75°C 0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 --2 5 25 °C --5 °C --4 --16. 0 --15 ID -- VGS --30 Tc= 7 V --1 0.0V --8 .0V --20 Drain Current, ID -- A --6 .0V Tc=25°C Drain Current, ID -- A --25 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 IT15318 7 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT15319 No.A1646-3/7 ATP101 VGS -- Qg --10 --7 --6 --5 --4 --1 3 2 2 4 6 8 10 12 14 16 PD -- Tc 20 20 15 10 5 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT15322 op er Operation in this area is limited by R DS (on). ati on Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT15321 EAS -- Ta 120 25 0 DC IT15320 30 0 ms --0.1 --0.1 Avalanche Energy derating factor -- % 35 18 10 3 2 --2 0 ID = --25A --10 7 5 --1.0 7 5 --3 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 5 3 2 PW≤10μs 1 0μ s 10 0μ s 1m s s Drain Current, ID -- A --8 0 IDP = --75A --100 7 0m 10 Gate-to-Source Voltage, VGS -- V --9 ASO 2 VDS= --15V ID= --25A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No.A1646-4/7 ATP101 Taping Specification ATP101-TL-H No.A1646-5/7 ATP101 Outline Drawing ATP101-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No.A1646-6/7 ATP101 Note on usage : Since the ATP101 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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