MBRTA80045 thru MBRTA800100R
Silicon Power
Schottky Diode
VRRM = 45 V - 100 V
IF(AV) = 800 A
Features
• High Surge Capability
• Types from 45 V to 100 V VRRM
Heavy Three Tower Package
• Isolation Type Package
• Electrically Isolated Base Plate
• Not ESD Sensitive
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Operating temperature
Storage temperature
Symbol
Conditions
MBRTA80045(R) MBRTA80060(R)MBRTA80080(R)MBRTA800100(R) Unit
VRRM
45
60
80
100
V
VRMS
32
42
56
70
V
VDC
Tj
Tstg
45
-55 to 150
-55 to 150
60
-55 to 150
-55 to 150
80
-55 to 150
-55 to 150
100
-55 to 150
-55 to 150
V
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Symbol
Conditions
Average forward current
(per pkg)
IF(AV)
TC = 100 °C
800
800
800
800
A
Peak forward surge current
(per leg)
IFSM
tp = 8.3 ms, half sine
6000
6000
6000
6000
A
Maximum instantaneous
forward voltage (per leg)
VF
IFM = 400 A, Tj = 25 °C
0.72
0.78
0.84
0.84
V
Reverse current at rated
DC blocking voltage (per
leg)
IR
Tj = 25 °C
Tj = 100 °C
Tj = 150 °C
1
10
50
1
10
50
1
10
50
1
10
50
mA
0.25
0.25
0.25
0.25
°C/W
Parameter
MBRTA80045(R) MBRTA80060(R)MBRTA80080(R)MBRTA800100(R) Unit
Thermal characteristics
Thermal resistance,
junction - case (per leg)
RΘJC
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MBRTA80045 thru MBRTA800100R
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MBRTA80045 thru MBRTA800100R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
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