NTE2902 N-Channel Silicon Junction Field Effect Transistor Description: The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications. Absolute Maximum Ratings: (Note 1) Drain-Source Voltage, VDS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Gate-Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25V Forward Gate Current, IGF . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10mA Total Device Dissipation (TA = +25°C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350mW Derate Above +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.8mW/°C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +125°C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -65 ° to +150°C Note 1. Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. Electrical Characteristics: (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit -25 - - V TA = +25°C - - -1.0 nA TA = +125°C - - -1.0 μA -2.0 - -6.5 V OFF Characteristics Gate-Source Breakdown Voltage Gate Reverse Current Gate-Source Cutoff Voltage V(BR)GSS IG = 1.0μA, VDS = 0 IGSS VGS(off) VGS = 15V, VDS = 0 VDS = 10V, ID = 1nA ON Characteristics Zero-Gate Voltage Drain Current IDSS VDS = 10V, VGS = 0, Note 2 24 - 60 mA Gate-Source Forward Voltage VGS(f) VDS = 0, IG = 1mA - - 1.0 V Note 2. Pulse test: Pulse Width ≤ 300μs, Duty Cycle ≤ 3%. Electrical Characteristics (Cont'd): (TA = +25°C unless otherwise specified) Parameter Symbol Test Conditions Min Typ Max Unit f = 100MHz - 0.5 - mmhos f = 100MHz - 0.25 - mmhos gos f = 1kHz - - 250 μmhos Common-Gate Power Gain Gpg f = 100MHz - 16 - dB Common-Source Forward Transconductance Re(yfs) f = 100MHz - 12 - mmhos 8000 - Common-Gate Input Conductance Re(yig) - 12 - mmhos - 150 - μmhos - 150 - μmhos VDS = 0, VGS = -10V, f = 1MHz - 1.8 2.5 pF - 4.3 5.0 pF VDS = 10V, ID = 10mA, f = 100Hz - 10 - nV/√Hz Small-Signal Characteristics Common- Source Input Conductance Re(yis) Common-Source Output Conductance Re(yos) VDS = 10V, ID = 10mA gfs Common-Gate Forward Transconductance gfg Common-Gate Output Conductance gog Gate-Drain Capacitance Cgd Gate-Source Capacitance Cgs f = 1kHz f = 100MHz VDS = 10V, ID = 10mA, f = 1kHz 18000 μmhos Functional Characteristics Equivalent Short-Circuit Input Noise Voltage en .135 (3.45) Min .210 (5.33) Max Seating Plane .500 (12.7) Min .021 (.445) Dia Max G S D .100 (2.54) .050 (1.27) .165 (4.2) Max .105 (2.67) Max .205 (5.2) Max .105 (2.67) Max