DATA SHEET AS193-000: PHEMT GaAs IC High-Linearity 3 V Control SPDT 0.1–2.5 GHz Switch Chip Features Functional Block Diagram 2.5 to 5 V linear operation ● Harmonics H , H < -65 dBc @ P 2 3 IN = 34.5 dBm ● Low insertion loss (0.35 dB @ 0.9 GHz) ● High isolation (24 dB @ 0.9 GHz) ● Lead (Pb)-free, RoHS-compliant, and Green ● V1 J2 J1 J3 V2 Description The AS193-000 is a PHEMT GaAs FET IC high-linearity SPDT switch. This switch has been designed for use where extremely high linearity, low control voltage, high isolation and low insertion loss are needed. Some standard implementations include antenna changeover, T/R and diversity switching over 3 W. The AS193-000 switch is ideal for GaAs based antenna switch front-end modules. NEW Skyworks Green products are lead (Pb)-free, RoHS (Restriction of Hazardous Substances)-compliant, conform to the EIA/EICTA/JEITA Joint Industry Guide (JIG) Level A guidelines, and are free from antimony trioxide and brominated flame retardants. Electrical Specifications at 25 °C (0, 3 V) Parameter(1) Insertion loss(2) Frequency Min. 0.1–0.5 GHz 0.5–1.0 GHz 1.0–2.0 GHz 2.0–2.5 GHz Isolation 0.1–0.5 GHz 0.5–1.0 GHz 1.0–2.0 GHz 2.0–2.5 GHz VSWR(3) 0.1–1.0 GHz 1.0–2.5 GHz 28 22 17 15 Typ. Max. Unit 0.30 0.35 0.45 0.55 0.4 0.5 0.6 0.7 dB dB dB dB 30 24 19 17 dB dB dB dB 1.2:1 1.3:1 dB dB 1. All measurements made in a 50 Ω system, unless otherwise specified. 2. Insertion loss changes by 0.003 dB/°C. 3. Insertion loss state. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200143 Rev. D • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • January 09, 2007 1 DATA SHEET • AS193-000 Operating Characteristics at 25 °C (0, 3 V) Parameter Condition Switching characteristics Rise, fall On, off Video feedthru 10/90% or 90/10% RF 50% CTL to 90/10% RF TRISE = 1 ns, BW = 500 MHz Input power for -0.1 dB compression VCTL = 0/3 V Harmonics H2, H3 PIN = 34.5 dBm Frequency Min. Typ. Unit 60 100 50 ns ns mV 0.9 GHz 37 dBm 0.9 GHz -65 dBc 25 °C/W Thermal resistance Control voltages Max. VLOW = 0 to 0.2 V @ 20 µA max. VHIGH = 2.5 V @ 50 µA max. to 5 V @ 100 µA max. Typical Performance Data 0 0 -0.1 -5 -10 IL -0.3 Isolation (dB) Insertion Loss (dB) -0.2 -0.4 -0.5 -0.6 -20 -25 -30 -0.7 -35 -0.8 -40 -0.9 -45 -1.0 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0.5 1.0 1.5 2.0 Frequency (GHz) Frequency (GHz) Insertion Loss vs. Frequency Isolation vs. Frequency 2.0 80 1.9 75 1.8 70 1.7 65 H2, H3 (dBc) VSWR (dB) -15 1.6 1.5 1.4 H3 55 50 45 1.2 40 1.1 35 30 0 0.5 1.0 1.5 2.0 2.5 3.0 2.0 2.5 3.0 3.5 4.0 4.5 5.0 Frequency (GHz) VCTRL (V) VSWR vs. Frequency Harmonics vs. Control Voltage PIN = 34.5 dBm, 900 MHz, GSM Pulsed Note: Contact factory for S-parameter data. Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 2 3.0 H2 60 1.3 1.0 2.5 January 09, 2007 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200143 Rev. D DATA SHEET • AS193-000 Absolute Maximum Ratings Value V1 V2 J1–J2 J1–J3 RF input power 6 W max. > 900 MHz, 0/5 V control 0 VHIGH Isolation Insertion loss VHIGH 0 Insertion loss Isolation Control voltage -0.2 V, +8 V Bond-pad metallization: gold. Backside metallization: none. See application note, Handling GaAs MMIC Die. Performance is guaranteed only under the conditions listed in the specifications table and is not guaranteed under the full range(s) described by the Absolute Maximum specifications. Exceeding any of the absolute maximum/minimum specifications may result in permanent damage to the device and will void the warranty. 0.0224 (0.569 mm) 0.0194 (0.493 mm) V1 0.0030 (0.089 mm) V2 J1 J3 J2 0.0000 0.0000 CAUTION: Although this device is designed to be as robust as possible, ESD (Electrostatic Discharge) can damage this device. This device must be protected at all times from ESD. Static charges may easily produce potentials of several kilovolts on the human body or equipment, which can discharge without detection. Industry-standard ESD precautions must be employed at all times. Outline Drawing 0.0392 (0.996 mm) -65 °C to +150 °C 0.0361 (0.917 mm) -40 °C to +85 °C Storage temperature 0.0196 (0.498 mm) Operating temperature All other conditions not recommended. VHIGH = 2.5 to 5 V. 0.0030 (0.089 mm) Characteristic Truth Table 0.0080 (0.020 mm) 0.0000 Dimensions in inches (mm). Tolerance ± 0.001 (0.025 mm). Bond-pad metallization: gold. Ordering Information Model Name Operating Temperature Range Ordering Part Number Package Description AS193-000 GaAs SPDT switch -40 °C to +85 °C AS193-000 Wafer on plastic-ring film frame Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 200143 Rev. D • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • January 09, 2007 3 DATA SHEET • AS193-000 Copyright © 2002, 2003, 2004, 2005, 2006, 2007, Skyworks Solutions, Inc. All Rights Reserved. Information in this document is provided in connection with Skyworks Solutions, Inc. (“Skyworks”) products or services. These materials, including the information contained herein, are provided by Skyworks as a service to its customers and may be used for informational purposes only by the customer. Skyworks assumes no responsibility for errors or omissions in these materials or the information contained herein. Skyworks may change its documentation, products, services, specifications or product descriptions at any time, without notice. Skyworks makes no commitment to update the materials or information and shall have no responsibility whatsoever for conflicts, incompatibilities, or other difficulties arising from any future changes. 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Skyworks Solutions, Inc. • Phone [781] 376-3000 • Fax [781] 376-3100 • [email protected] • www.skyworksinc.com 4 January 09, 2007 • Skyworks Proprietary Information • Products and Product Information are Subject to Change Without Notice. • 200143 Rev. D