Cypress CY7C1484BV33 72-mbit (2 m ã 36) pipelined dcd sync sram Datasheet

CY7C1484BV33
72-Mbit (2 M × 36)
Pipelined DCD Sync SRAM
72-Mbit (2 M × 36) Pipelined DCD Sync SRAM
Features
Functional Description
■
Supports bus operation up to 250 MHz
■
Available speed grade is 250 MHz
■
Registered inputs and outputs for pipelined operation
■
Optimal for performance (double cycle deselect)
■
Depth expansion without wait state
■
3.3 V core power supply (VDD)
■
2.5 V and 3.3 V I/O operation
■
Fast clock to output times
❐ 3.0 ns (for 250 MHz device)
■
Provide high performance 3-1-1-1 access rate
■
User selectable burst counter supporting Intel® Pentium®
interleaved or linear burst sequences
■
Separate processor and controller address strobes
■
Synchronous self timed writes
■
Asynchronous output enable
■
CY7C1484BV33 available in Pb-free 165-ball FBGA package
■
IEEE 1149.1 JTAG compatible boundary scan
■
“ZZ” sleep mode option
The CY7C1484BV33 SRAM integrates 2 M × 36 SRAM cells with
advanced synchronous peripheral circuitry and a 2-bit counter
for internal burst operation. All synchronous inputs are gated by
registers controlled by a positive edge triggered Clock Input
(CLK). The synchronous inputs include all addresses, all data
inputs, address pipelining Chip Enable (CE1), depth expansion
Chip Enables (CE2 and CE3), Burst Control inputs (ADSC,
ADSP, and ADV), Write Enables (BWX, and BWE), and Global
Write (GW). Asynchronous inputs include the Output Enable
(OE) and the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either Address Strobe Processor (ADSP) or Address
Strobe Controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
Advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle. This part supports byte write
operations (see Pin Definitions on page 5 and Truth Table on
page 8 for more information). Write cycles can be one to four
bytes wide as controlled by the byte write control inputs. GW
active LOW causes all bytes to be written. This device
incorporates an additional pipelined enable register, which
delays turning off the output buffers an additional cycle when a
deselect is executed. This feature allows depth expansion
without penalizing system performance.
The CY7C1484BV33 operates from a +3.3 V core power supply
while all outputs operate with a +3.3 V or a +2.5 V supply. All
inputs and outputs are JEDEC standard JESD8-5 compatible.
Selection Guide
Description
250 MHz
Unit
Maximum Access Time
3.0
ns
Maximum Operating Current
500
mA
Maximum CMOS Standby Current
120
mA
Cypress Semiconductor Corporation
Document Number: 001-75351 Rev. *B
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised January 9, 2013
CY7C1484BV33
Logic Block Diagram – CY7C1484BV33
ADDRESS
REGISTER
A 0,A1,A
2 A[1:0]
MODE
ADV
CLK
BURST
Q1
COUNTER AND
LOGIC
CLR
Q0
ADSC
ADSP
BW D
DQ D, DQP D
BYTE
WRITE REGISTER
DQ D, DQP D
BYTE
WRITE DRIVER
BW C
DQ c,DQP C
BYTE
WRITE REGISTER
DQ c,DQP C
BYTE
WRITE DRIVER
DQ B ,DQP B
BYTE
WRITE REGISTER
DQ B ,DQP B
BYTE
WRITE DRIVER
BW B
BW A
BWE
GW
CE 1
CE 2
CE 3
OE
ZZ
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs
DQP A
DQP B
DQP C
DQP D
E
DQ A, DQP A
BYTE
WRITE DRIVER
DQ A, DQP A
BYTE
WRITE REGISTER
ENABLE
REGISTER
MEMORY
ARRAY
PIPELINED
ENABLE
INPUT
REGISTERS
SLEEP
CONTROL
Document Number: 001-75351 Rev. *B
Page 2 of 30
CY7C1484BV33
Contents
Pin Configurations ........................................................... 4
Pin Definitions .................................................................. 5
Functional Overview ........................................................ 6
Single Read Accesses ................................................ 6
Single Write Accesses Initiated by ADSP ................... 6
Single Write Accesses Initiated by ADSC ................... 6
Burst Sequences ......................................................... 7
Sleep Mode ................................................................. 7
Interleaved Burst Address Table
(MODE = Floating or VDD) .................................................. 7
Linear Burst Address Table (MODE = GND) ............... 7
ZZ Mode Electrical Characteristics .............................. 7
Truth Table ........................................................................ 8
Truth Table for Read/Write .............................................. 9
IEEE 1149.1 Serial Boundary Scan (JTAG) .................. 10
Disabling the JTAG Feature ...................................... 10
Test Access Port (TAP) ............................................. 10
PERFORMING A TAP RESET .................................. 10
TAP REGISTERS ...................................................... 10
TAP Instruction Set ................................................... 10
TAP Controller State Diagram ....................................... 12
TAP Controller Block Diagram ...................................... 13
TAP Timing ...................................................................... 13
TAP AC Switching Characteristics ............................... 14
3.3 V TAP AC Test Conditions ....................................... 15
3.3 V TAP AC Output Load Equivalent ......................... 15
2.5 V TAP AC Test Conditions ....................................... 15
2.5 V TAP AC Output Load Equivalent ......................... 15
Document Number: 001-75351 Rev. *B
TAP DC Electrical Characteristics and
Operating Conditions ..................................................... 15
Identification Register Definitions ................................ 16
Scan Register Sizes ....................................................... 16
Identification Codes ....................................................... 16
Boundary Scan Exit Order ............................................. 17
Maximum Ratings ........................................................... 18
Operating Range ............................................................. 18
Electrical Characteristics ............................................... 18
Capacitance .................................................................... 19
Thermal Resistance ........................................................ 19
AC Test Loads and Waveforms ..................................... 20
Switching Characteristics .............................................. 21
Switching Waveforms .................................................... 22
Ordering Information ...................................................... 26
Ordering Code Definitions ......................................... 26
Package Diagrams .......................................................... 27
Acronyms ........................................................................ 28
Document Conventions ................................................. 28
Units of Measure ....................................................... 28
Document History Page ................................................. 29
Sales, Solutions, and Legal Information ...................... 30
Worldwide Sales and Design Support ....................... 30
Products .................................................................... 30
PSoC Solutions ......................................................... 30
Page 3 of 30
CY7C1484BV33
Pin Configurations
Figure 1. 165-ball FBGA (15 × 17 × 1.4 mm) pinout
CY7C1484BV33 (2 M × 36)
1
2
3
4
5
6
7
8
9
10
11
A
B
C
D
E
F
G
H
J
K
L
M
N
P
NC/288M
A
CE1
BWC
BWB
CE3
BWE
ADSC
ADV
A
NC
NC/144M
A
CE2
BWD
BWA
CLK
NC/576M
VDDQ
VDDQ
VSS
VDD
VSS
VSS
VSS
VSS
OE
VSS
VDD
A
NC
DQC
GW
VSS
VSS
ADSP
DQPC
DQC
VDDQ
VDDQ
NC/1G
DQB
DQPB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
DQC
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQB
DQB
DQC
NC
DQD
DQC
NC
DQD
VDDQ
NC
VDDQ
VDD
VDD
VDD
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VSS
VDD
VDD
VDD
VDDQ
NC
VDDQ
DQB
NC
DQA
DQB
ZZ
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQD
VDDQ
VDD
VSS
VSS
VSS
VDD
VDDQ
DQA
DQA
DQD
DQPD
DQD
NC
VDDQ
VDDQ
VDD
VSS
VSS
NC
VSS
A
VSS
NC
VDD
VSS
VDDQ
VDDQ
DQA
NC
DQA
DQPA
NC
A
A
A
TDI
A1
TDO
A
A
A
A
R
MODE
A
A
A
TMS
A0
TCK
A
A
A
A
Document Number: 001-75351 Rev. *B
Page 4 of 30
CY7C1484BV33
Pin Definitions
Pin Name
A0, A1, A
I/O
Description
InputAddress Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the CLK
Synchronous if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1:A0 are fed to the 2-bit
counter.
InputByte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes to the SRAM.
BWA, BWB
BWC, BWD Synchronous Sampled on the rising edge of CLK.
GW
InputGlobal Write Enable Input, Active LOW. When asserted LOW on the rising edge of CLK, a global write
Synchronous is conducted (ALL bytes are written, regardless of the values on BWX and BWE).
BWE
InputByte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal must be asserted
Synchronous LOW to conduct a byte write.
CLK
InputClock
Clock Input. Capture all synchronous inputs to the device. Also used to increment the burst counter
when ADV is asserted LOW during a burst operation.
CE1
InputChip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2
Synchronous and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a
new external address is loaded.
CE2
InputChip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1
Synchronous and CE3 to select or deselect the device. CE2 is sampled only when a new external address is loaded.
CE3
InputChip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1
Synchronous and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded.
OE
InputOutput Enable, Asynchronous Input, Active LOW. Controls the direction of the I/O pins. When LOW,
Asynchronous the I/O pins behave as outputs. When deasserted HIGH, DQ pins are tri-stated, and act as input data
pins. OE is masked during the first clock of a read cycle when emerging from a deselected state.
ADV
InputAdvance Input Signal, Sampled on the Rising Edge of CLK, Active LOW. When asserted, it
Synchronous automatically increments the address in a burst cycle.
ADSP
InputAddress Strobe from Processor, Sampled on the Rising Edge of CLK, Active LOW. When asserted
Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is
ignored when CE1 is deasserted HIGH.
ADSC
InputAddress Strobe from Controller, Sampled on the Rising Edge of CLK, Active LOW. When asserted
Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
ZZ
InputZZ “Sleep” Input, Active HIGH. When asserted HIGH, places the device in a non time-critical “sleep”
Asynchronous condition with data integrity preserved. For normal operation, this pin must be LOW or left floating. ZZ
pin has an internal pull down.
DQs, DQPs
I/OBidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by the
Synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the
addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled
by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed
in a tri-state condition.
VDD
Power Supply Power Supply Inputs to the Core of the Device.
Ground
Ground for the Core of the Device.
VDDQ
I/O Power
Supply
Power Supply for the I/O Circuitry.
MODE
InputStatic
VSS
TDO
Selects Burst Order. When tied to GND, selects linear burst sequence. When tied to VDD or left floating,
selects interleaved burst sequence. This is a strap pin and must remain static during device operation.
Mode Pin has an internal pull up.
JTAG Serial Serial Data-Out to the JTAG Circuit. Delivers data on the negative edge of TCK. If the JTAG feature is
not used, this pin must be disconnected.
Output
Synchronous
Document Number: 001-75351 Rev. *B
Page 5 of 30
CY7C1484BV33
Pin Definitions (continued)
Pin Name
I/O
Description
TDI
JTAG Serial Serial Data-In to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG feature is not used,
this pin can be disconnected or connected to VDD.
Input
Synchronous
TMS
JTAG Serial Serial Data-in to the JTAG Circuit. Sampled on the rising edge of TCK. If the JTAG feature is not used,
Input
this pin can be disconnected or connected to VDD.
Synchronous
TCK
JTAG Clock Clock Input to the JTAG Circuitry. If the JTAG feature is not used, this pin must be connected to VSS.
NC
–
No Connects. Not internally connected to the die. 144M, 288M, 576M, and 1G are address expansion
pins and are not internally connected to the die.
Functional Overview
ADSP or ADSC signals, its output tri-states immediately after the
next clock rise.
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock.
Single Write Accesses Initiated by ADSP
The CY7C1484BV33 supports secondary cache in systems
using either a linear or interleaved burst sequence. The
interleaved burst order supports Pentium and i486™ processors.
The linear burst sequence is suited for processors that use a
linear burst sequence. The burst order is user selectable and is
determined by sampling the MODE input. Accesses are initiated
with either the Processor Address Strobe (ADSP) or the
Controller Address Strobe (ADSC). Address advancement
through the burst sequence is controlled by the ADV input. A
2-bit on-chip wraparound burst counter captures the first address
in a burst sequence and automatically increments the address
for the rest of the burst access.
Byte write operations are qualified with the Byte Write Enable
(BWE) and Byte Write Select (BWX) inputs. A Global Write
Enable (GW) overrides all byte write inputs and writes data to all
four bytes. All writes are simplified with on-chip synchronous self
timed write circuitry.
Synchronous Chip Selects CE1, CE2, CE3, and an asynchronous
Output Enable (OE) provide easy bank selection and output
tri-state control. ADSP is ignored if CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
chip selects are all asserted active, and (3) the write signals (GW,
BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH.
The address presented to the address inputs is stored into the
address advancement logic and the address register while being
presented to the memory core. The corresponding data is
allowed to propagate to the input of the output registers. At the
rising edge of the next clock the data is allowed to propagate
through the output register and onto the data bus within tCO if OE
is active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state; its outputs
are always tri-stated during the first cycle of the access. After the
first cycle of the access, the OE signal controls the outputs.
Consecutive single read cycles are supported.
The CY7C1484BV33 is a double cycle deselect part. After the
SRAM is deselected at clock rise by the chip select and either
Document Number: 001-75351 Rev. *B
This access is initiated when both the following conditions are
satisfied at clock rise: (1) ADSP is asserted LOW and (2) chip
select is asserted active. The address presented is loaded into
the address register and the address advancement logic while
being delivered to the memory core. The write signals (GW,
BWE, and BWX) and ADV inputs are ignored during this first
cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQx inputs is written into the
corresponding address location in the memory core. If GW is
HIGH, then the BWE and BWX signals control the write
operation. The CY7C1484BV33 provides byte write capability
that is described in the Truth Table on page 8. Asserting the Byte
Write Enable input (BWE) with the selected byte write input
selectively writes to only the desired bytes. Bytes not selected
during a byte write operation remain unaltered. A synchronous
self timed write mechanism is provided to simplify the write
operations.
Because the CY7C1484BV33 is a common I/O device, the
Output Enable (OE) must be deasserted HIGH before presenting
data to the DQ inputs. Doing so tri-states the output drivers. As
a safety precaution, DQ are automatically tri-stated whenever a
write cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following conditions
are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted
HIGH, (3) chip select is asserted active, and (4) the appropriate
combination of the write inputs (GW, BWE, and BWX) are
asserted active to conduct a write to the desired bytes. ADSC
triggered write accesses require a single clock cycle to complete.
The address presented is loaded into the address register and
the address advancement logic while being delivered to the
memory core. The ADV input is ignored during this cycle. If a
global write is conducted, the data presented to the DQX is
written into the corresponding address location in the memory
core. If a byte write is conducted, only the selected bytes are
written. Bytes not selected during a byte write operation remain
unaltered. A synchronous self timed write mechanism is
provided to simplify the write operations.
Page 6 of 30
CY7C1484BV33
Because the CY7C1484BV33 is a common I/O device, the
Output Enable (OE) must be deasserted HIGH before presenting
data to the DQX inputs. Doing so tri-states the output drivers. As
a safety precaution, DQX are automatically tri-stated whenever
a write cycle is detected, regardless of the state of OE.
Burst Sequences
ADSC must remain inactive for the duration of tZZREC after the
ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
The CY7C1484BV33 provides a 2-bit wraparound counter, fed
by A[1:0], that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input. Both read and write burst operations
are supported.
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
read and write burst operations are supported.
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Linear Burst Address Table (MODE = GND)
Sleep Mode
The ZZ input pin is asynchronous. Asserting ZZ places the
SRAM in a power conservation “sleep” mode. Two clock cycles
are required to enter into or exit from this “sleep” mode. While in
this mode, data integrity is guaranteed. Accesses pending when
entering the “sleep” mode are not considered valid nor is the
completion of the operation guaranteed. The device must be
deselected before entering the “sleep” mode. CEs, ADSP, and
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
–
120
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
–
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–
ns
tZZI
ZZ Active to sleep current
This parameter is sampled
–
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
0
–
ns
Document Number: 001-75351 Rev. *B
Page 7 of 30
CY7C1484BV33
Truth Table
The truth table for CY7C1484BV33 follows. [1, 2, 3, 4, 5]
Operation
Address Used CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
DQ
Deselect Cycle, Power Down
None
H
X
X
L
X
L
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L–H Tri-State
Sleep Mode, Power Down
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L–H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L–H Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L–H
D
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L–H
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L–H Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L–H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L–H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L–H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L–H Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L–H
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L–H Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L–H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L–H
D
Q
Q
Q
Notes
1. X = Don’t Care, H = Logic HIGH, L = Logic LOW.
2. WRITE = L when any one or more Byte Write Enable signals and BWE = L or GW = L. WRITE = H when all Byte Write Enable signals, BWE, GW = H.
3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
4. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes can occur only on subsequent clocks after the
ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to enable the outputs to tri-state. OE is a don’t care for
the remainder of the write cycle.
5. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive
or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document Number: 001-75351 Rev. *B
Page 8 of 30
CY7C1484BV33
Truth Table for Read/Write
The read/write truth table for CY7C1484BV33 and follows. [6, 7]
Function (CY7C1484BV33)
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
H
L
H
H
H
L
Write Byte B – (DQB and DQPB)
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Notes
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. Table includes only a partial listing of the byte write combinations. Any combination of BWX is valid. Appropriate write is based on which byte write is active.
Document Number: 001-75351 Rev. *B
Page 9 of 30
CY7C1484BV33
IEEE 1149.1 Serial Boundary Scan (JTAG)
The CY7C1484BV33 incorporates a serial boundary scan test
access port (TAP). This port operates in accordance with IEEE
Standard 1149.1-1990 but does not have the set of functions
required for full 1149.1 compliance. These functions from the
IEEE specification are excluded because their inclusion places
an added delay in the critical speed path of the SRAM. Note that
the TAP controller functions in a manner that does not conflict
with the operation of other devices using 1149.1 fully compliant
TAPs. The TAP operates using JEDEC standard 3.3 V or 2.5 V
I/O logic levels.
The CY7C1484BV33 contains a TAP controller, instruction
register, boundary scan register, bypass register, and ID register.
Disabling the JTAG Feature
It is possible to operate the SRAM without using the JTAG
feature. To disable the TAP controller, tie TCK LOW (VSS) to
prevent device clocking. TDI and TMS are internally pulled up
and may be unconnected. They may alternatively be connected
to VDD through a pull up resistor. TDO must be left unconnected.
During power up, the device comes up in a reset state, which
does not interfere with the operation of the device.
Test Access Port (TAP)
Test Clock (TCK)
The test clock is used only with the TAP controller. All inputs are
captured on the rising edge of TCK. All outputs are driven from
the falling edge of TCK.
Test Mode Select (TMS)
The TMS input gives commands to the TAP controller and is
sampled on the rising edge of TCK. it is allowable to leave this
ball unconnected if the TAP is not used. The ball is pulled up
internally, resulting in a logic HIGH level.
Test Data-In (TDI)
The TDI ball serially inputs information into the registers and can
be connected to the input of any of the registers. The register
between TDI and TDO is chosen by the instruction that is loaded
into the TAP instruction register. For information about loading
the instruction register, see the TAP Controller State Diagram on
page 12. TDI is internally pulled up and can be unconnected if
the TAP is unused in an application. TDI is connected to the most
significant bit (MSB) of any register.
Test Data-Out (TDO)
The TDO output ball serially clocks data-out from the registers.
Whether the output is active depends on the current state of the
TAP state machine (see Identification Codes on page 16). The
output changes on the falling edge of TCK. TDO is connected to
the least significant bit (LSB) of any register.
Performing a TAP Reset
Perform a RESET by forcing TMS HIGH (VDD) for five rising
edges of TCK. This RESET does not affect the operation of the
SRAM and may be performed while the SRAM is operating.
During power up, the TAP is reset internally to ensure that TDO
comes up in a High Z state.
Document Number: 001-75351 Rev. *B
TAP Registers
Registers are connected between the TDI and TDO balls to scan
the data in and out of the SRAM test circuitry. Only one register
can be selected at a time through the instruction register. Data is
serially loaded into the TDI ball on the rising edge of TCK. Data
is output on the TDO ball on the falling edge of TCK.
Instruction Register
Three-bit instructions are serially loaded into the instruction
register. This register is loaded when it is placed between the TDI
and TDO balls, as shown in the TAP Controller Block Diagram
on page 13. During power up, the instruction register is loaded
with the IDCODE instruction. It is also loaded with the IDCODE
instruction if the controller is placed in a reset state, as described
in the previous section.
When the TAP controller is in the Capture-IR state, the two least
significant bits are loaded with a binary ‘01’ pattern to enable fault
isolation of the board-level serial test data path.
Bypass Register
To save time when serially shifting data through registers, it is
sometimes advantageous to skip certain chips. The bypass
register is a single bit register that is placed between the TDI and
TDO balls. This enables shifting of data through the SRAM with
minimal delay. The bypass register is set LOW (VSS) when the
BYPASS instruction is executed.
Boundary Scan Register
The boundary scan register is connected to all the input and
bidirectional balls on the SRAM. The x36 configuration has a
73-bit long register and the x18 configuration has a 54-bit long
register.
The boundary scan register is loaded with the contents of the
RAM I/O ring when the TAP controller is in the Capture-DR state
and is then placed between the TDI and TDO balls when the
controller moves to the Shift-DR state. The EXTEST,
SAMPLE/PRELOAD, and SAMPLE Z instructions are used to
capture the contents of the I/O ring.
The Boundary Scan Exit Order on page 17 show the order in
which the bits are connected. Each bit corresponds to one of the
bumps on the SRAM package. The MSB of the register is
connected to TDI and the LSB is connected to TDO.
Identification (ID) Register
The ID register is loaded with a vendor specific, 32-bit code
during the Capture-DR state when the IDCODE command is
loaded in the instruction register. The IDCODE is hardwired into
the SRAM and can be shifted out when the TAP controller is in
the Shift-DR state. The ID register has a vendor code and other
information described in Identification Register Definitions on
page 16.
TAP Instruction Set
Overview
Eight different instructions are possible with the 3-bit instruction
register. All combinations are listed in Identification Codes on
page 16. Three of these instructions are listed as RESERVED
and must not be used. The other five instructions are described
in detail in this section.
Page 10 of 30
CY7C1484BV33
The TAP controller used in this SRAM is not fully compliant to the
1149.1 convention because some of the mandatory 1149.1
instructions are not fully implemented.
The TAP controller cannot be used to load address data or
control signals into the SRAM and cannot preload the I/O buffers.
The SRAM does not implement the 1149.1 commands EXTEST
or INTEST or the PRELOAD portion of SAMPLE/PRELOAD;
rather, it performs a capture of the I/O ring when these
instructions are executed.
Instructions are loaded into the TAP controller during the Shift-IR
state when the instruction register is placed between TDI and
TDO. During this state, instructions are shifted through the
instruction register through the TDI and TDO balls. To execute
the instruction after it is shifted in, the TAP controller must be
moved into the Update-IR state.
EXTEST
EXTEST is a mandatory 1149.1 instruction that is executed
whenever the instruction register is loaded with all zeros.
EXTEST is not implemented in this SRAM TAP controller, and
therefore this device is not compliant to 1149.1. The TAP
controller does recognize an all-zero instruction.
When an EXTEST instruction is loaded into the instruction
register, the SRAM responds as if a SAMPLE/PRELOAD
instruction is loaded. There is one difference between the two
instructions. Unlike the SAMPLE/PRELOAD instruction,
EXTEST places the SRAM outputs in a High Z state.
IDCODE
The IDCODE instruction loads a vendor specific, 32-bit code into
the instruction register. It also places the instruction register
between the TDI and TDO balls and shifts the IDCODE out of the
device when the TAP controller enters the Shift-DR state.
The IDCODE instruction is loaded into the instruction register at
power up or whenever the TAP controller is in a test logic reset
state.
SAMPLE Z
The SAMPLE Z instruction causes the boundary scan register to
be connected between the TDI and TDO balls when the TAP
controller is in a Shift-DR state. It also places all SRAM outputs
into a High Z state.
SAMPLE/PRELOAD
SAMPLE/PRELOAD is a 1149.1 mandatory instruction. The
PRELOAD portion of this instruction is not implemented, so the
device TAP controller is not fully 1149.1 compliant.
When the SAMPLE/PRELOAD instruction is loaded into the
instruction register and the TAP controller is in the Capture-DR
state, a snapshot of data on the inputs and bidirectional balls is
captured in the boundary scan register.
Be aware that the TAP controller clock only operates at a
frequency up to 10 MHz, while the SRAM clock operates more
than an order of magnitude faster. Because there is a large
difference in the clock frequencies, it is possible that during the
Capture-DR state, an input or output may undergo a transition.
The TAP may then try to capture a signal while in transition
(metastable state). This does not harm the device, but there is
no guarantee as to the value that may be captured. Repeatable
results may not be possible.
To guarantee that the boundary scan register captures the
correct value of a signal, the SRAM signal must be stabilized
long enough to meet the TAP controller’s capture setup plus hold
time (tCS plus tCH).
The SRAM clock input might not be captured correctly if there is
no way in a design to stop (or slow) the clock during a
SAMPLE/PRELOAD instruction. If this is an issue, it is still
possible to capture all other signals and simply ignore the value
of the CLK captured in the boundary scan register.
After the data is captured, shift out the data by putting the TAP
into the Shift-DR state. This places the boundary scan register
between the TDI and TDO balls.
Note that because the PRELOAD part of the command is not
implemented, putting the TAP to the Update-DR state while
performing a SAMPLE/PRELOAD instruction has the same
effect as the Pause-DR command.
BYPASS
When the BYPASS instruction is loaded in the instruction register
and the TAP is placed in a Shift-DR state, the bypass register is
placed between the TDI and TDO balls. The advantage of the
BYPASS instruction is that it shortens the boundary scan path
when multiple devices are connected together on a board.
Reserved
These instructions are not implemented but are reserved for
future use. Do not use these instructions.
Document Number: 001-75351 Rev. *B
Page 11 of 30
CY7C1484BV33
TAP Controller State Diagram
1
TEST-LOGIC
RESET
0
0
RUN-TEST/
IDLE
1
SELECT
DR-SCA N
1
SELECT
IR-SCAN
0
1
0
1
CAPTURE-DR
CAPTURE-IR
0
0
SHIFT-DR
0
SHIFT-IR
1
1
EXIT1-IR
0
1
0
PAUSE-DR
0
PAUSE-IR
1
0
1
EXIT2-DR
0
EXIT2-IR
1
1
UPDATE-DR
1
0
1
EXIT1-DR
0
1
0
UPDATE-IR
1
0
The 0/1 next to each state represents the value of TMS at the rising edge of TCK.
Document Number: 001-75351 Rev. *B
Page 12 of 30
CY7C1484BV33
TAP Controller Block Diagram
0
Bypass Register
2 1 0
TDI
Selection
Circuitry
Selection
Circuitry
Instruction Register
TDO
31 30 29 . . . 2 1 0
Identification Register
x . . . . . 2 1 0
Boundary Scan Register
TCK
TAP CONTROLLER
TM S
TAP Timing
Figure 2. TAP Timing
1
2
Test Clock
(TCK )
3
t TH
t TM SS
t TM SH
t TDIS
t TDIH
t
TL
4
5
6
t CY C
Test M ode Select
(TM S)
Test Data-In
(TDI)
t TDOV
t TDOX
Test Data-Out
(TDO)
DON’T CA RE
Document Number: 001-75351 Rev. *B
UNDEFINED
Page 13 of 30
CY7C1484BV33
TAP AC Switching Characteristics
Over the Operating Range
Parameter [8, 9]
Clock
tTCYC
tTF
tTH
tTL
Output Times
tTDOV
tTDOX
Setup Times
tTMSS
tTDIS
tCS
Hold Times
tTMSH
tTDIH
tCH
Description
Min
Max
Unit
TCK Clock Cycle Time
TCK Clock Frequency
TCK Clock HIGH Time
TCK Clock LOW Time
50
–
20
20
–
20
–
–
ns
MHz
ns
ns
TCK Clock LOW to TDO Valid
TCK Clock LOW to TDO Invalid
–
0
10
–
ns
ns
TMS Setup to TCK Clock Rise
TDI Setup to TCK Clock Rise
Capture Setup to TCK Rise
5
5
5
–
–
–
ns
ns
ns
TMS hold after TCK Clock Rise
TDI Hold after Clock Rise
Capture Hold after Clock Rise
5
5
5
–
–
–
ns
ns
ns
Notes
8. tCS and tCH refer to the setup and hold time requirements of latching data from the boundary scan register.
9. Test conditions are specified using the load in TAP AC Test Conditions. tR/tF = 1 ns.
Document Number: 001-75351 Rev. *B
Page 14 of 30
CY7C1484BV33
3.3 V TAP AC Test Conditions
2.5 V TAP AC Test Conditions
Input pulse levels ...............................................VSS to 3.3 V
Input pulse levels ............................................... VSS to 2.5 V
Input rise and fall times ...................................................1 ns
Input rise and fall time ....................................................1 ns
Input timing reference levels ......................................... 1.5 V
Input timing reference levels ....................................... 1.25 V
Output reference levels ................................................ 1.5 V
Output reference levels .............................................. 1.25 V
Test load termination supply voltage ............................ 1.5 V
Test load termination supply voltage .......................... 1.25 V
3.3 V TAP AC Output Load Equivalent
2.5 V TAP AC Output Load Equivalent
1.25V
1.5V
50Ω
50Ω
TDO
TDO
Z O= 50Ω
Z O= 50Ω
20pF
20pF
TAP DC Electrical Characteristics and Operating Conditions
(0 °C < TA < +70 °C; VDD = 3.135 V to 3.6 V unless otherwise noted)
Parameter [11]
VOH1
VOH2
VOL1
VOL2
VIH
VIL
IX
Description
Output HIGH Voltage
Output HIGH Voltage
Output LOW Voltage
Output LOW Voltage
Input HIGH Voltage
Input LOW Voltage
Input Load Current
Test Conditions
Min
Max
Unit
IOH = –4.0 mA, VDDQ = 3.3 V
2.4
–
V
IOH = –1.0 mA, VDDQ = 2.5 V
2.0
–
V
IOH = –100 µA
VDDQ = 3.3 V
2.9
–
V
VDDQ = 2.5 V
2.1
–
V
IOL = 8.0 mA, VDDQ = 3.3 V
–
0.4
V
IOL = 1.0 mA, VDDQ = 2.5 V
–
0.4
V
IOL = 100 µA
VDDQ = 3.3 V
–
0.2
V
VDDQ = 2.5 V
–
0.2
V
VDDQ = 3.3 V
2.0
VDD + 0.3
V
VDDQ = 2.5 V
1.7
VDD + 0.3
V
VDDQ = 3.3 V
–0.5
0.7
V
VDDQ = 2.5 V
–0.3
0.7
V
–5
5
µA
GND < VIN < VDDQ
Note
11. All voltages refer to VSS (GND).
Document Number: 001-75351 Rev. *B
Page 15 of 30
CY7C1484BV33
Identification Register Definitions
Bit# 24 is “1” in the ID Register definitions for both 2.5 V and 3.3 V versions of the device.
CY7C1484BV33
(2 M × 36)
Instruction Field
Revision Number (31:29)
000
Description
Describes the version number
Device Depth (28:24)
01011
Reserved for internal use
Architecture/Memory Type(23:18)
000110
Defines memory type and architecture
100100
Defines width and density
Bus Width/Density (17:12)
Cypress JEDEC ID Code (11:1)
00000110100
ID Register Presence Indicator (0)
1
Enables unique identification of SRAM vendor
Indicates the presence of an ID register
Scan Register Sizes
Register Name
Bit Size (× 36)
Instruction
3
Bypass
1
ID
32
Boundary Scan Order – 165-ball FBGA
73
Identification Codes
Instruction
Code
Description
EXTEST
000
Captures I/O ring contents.
IDCODE
001
Loads the ID register with the vendor ID code and places the register between TDI and TDO.
This operation does not affect SRAM operations.
SAMPLE Z
010
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Forces
all SRAM output drivers to a High Z state.
RESERVED
011
Do Not Use: This instruction is reserved for future use.
SAMPLE/PRELOAD
100
Captures I/O ring contents. Places the boundary scan register between TDI and TDO. Does
not affect SRAM operation.
RESERVED
101
Do Not Use: This instruction is reserved for future use.
RESERVED
110
Do Not Use: This instruction is reserved for future use.
BYPASS
111
Places the bypass register between TDI and TDO. This operation does not affect SRAM
operations.
Document Number: 001-75351 Rev. *B
Page 16 of 30
CY7C1484BV33
Boundary Scan Exit Order
(2 M × 36)
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
Bit #
165-Ball ID
1
C1
21
R3
2
D1
22
P2
41
L10
61
B8
42
K11
62
A7
3
E1
23
R4
43
J11
63
B7
4
D2
24
P6
44
K10
64
B6
5
E2
25
R6
45
J10
65
A6
6
F1
26
N6
46
H11
66
B5
7
G1
27
P11
47
G11
67
A5
8
F2
28
R8
48
F11
68
A4
9
G2
29
P3
49
E11
69
B4
10
J1
30
P4
50
D10
70
B3
11
K1
31
P8
51
D11
71
A3
12
L1
32
P9
52
C11
72
A2
13
J2
33
P10
53
G10
73
B2
14
M1
34
R9
54
F10
15
N1
35
R10
55
E10
16
K2
36
R11
56
A10
17
L2
37
N11
57
B10
18
M2
38
M11
58
A9
19
R1
39
L11
59
B9
20
R2
40
M10
60
A8
Document Number: 001-75351 Rev. *B
Page 17 of 30
CY7C1484BV33
Maximum Ratings
DC Input Voltage ................................ –0.5 V to VDD + 0.5 V
Exceeding the maximum ratings may impair the useful life of the
device. These user guidelines are not tested.
Storage Temperature ............................... –65 C to +150 C
Ambient Temperature with
Power Applied ......................................... –55 C to +125 C
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(MIL-STD-883, Method 3015) .................................. >2001 V
Latch Up Current .................................................... >200 mA
Operating Range
Supply Voltage on VDD Relative to GND .....–0.5 V to +4.6 V
Supply Voltage on VDDQ Relative to GND .... –0.5 V to +VDD
Range
Ambient
Temperature
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to VDDQ + 0.5 V
Commercial
0 °C to +70 °C
Industrial
–40 °C to +85 °C
VDD
VDDQ
3.3 V– 5% / 2.5 V – 5% to
+ 10%
VDD
Electrical Characteristics
Over the Operating Range
Parameter [12, 13]
Description
Test Conditions
Min
Max
Unit
VDD
Power Supply Voltage
3.135
3.6
V
VDDQ
I/O Supply Voltage
For 3.3 V I/O
3.135
VDD
V
For 2.5 V I/O
2.375
2.625
V
VOH
Output HIGH Voltage
For 3.3 V I/O, IOH = –4.0 mA
2.4
–
V
For 2.5 V I/O, IOH = –1.0 mA
2.0
–
V
For 3.3 V I/O, IOL = 8.0 mA
–
0.4
V
For 2.5 V I/O, IOL = 1.0 mA
–
0.4
V
2.0
VDD + 0.3 V
V
For 2.5 V I/O
1.7
VDD + 0.3 V
V
For 3.3 V I/O
–0.3
0.8
V
For 2.5 V I/O
VOL
Output LOW Voltage
[12]
VIH
Input HIGH Voltage
VIL
Input LOW Voltage [12]
–0.3
0.7
V
IX
Input Leakage Current Except ZZ GND  VI  VDDQ
and MODE
–5
5
A
Input Current of MODE
Input = VSS
–30
–
A
Input = VDD
–
5
A
Input = VSS
–5
–
A
Input = VDD
–
30
A
Output Leakage Current
GND  VI  VDDQ, Output Disabled
–5
5
A
VDD Operating Supply Current
VDD = Max., IOUT = 0 mA,
f = fMAX = 1/tCYC
4 ns cycle,
250 MHz
–
500
mA
ISB1
Automatic CE Power Down
Current – TTL Inputs
VDD = Max, Device Deselected,
VIN  VIH or VIN  VIL
f = fMAX = 1/tCYC
4 ns cycle,
250 MHz
–
245
mA
ISB2
Automatic CE Power Down
Current – CMOS Inputs
VDD = Max, Device Deselected, 4 ns cycle,
VIN  0.3V or VIN > VDDQ – 0.3V, 250 MHz
f=0
–
120
mA
Input Current of ZZ
IOZ
IDD
[14]
For 3.3 V I/O
Notes
12. Overshoot: VIH(AC) < VDD +1.5 V (pulse width less than tCYC/2). Undershoot: VIL(AC) > –2 V (pulse width less than tCYC/2).
13. Power up: assumes a linear ramp from 0 V to VDD(minimum) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
14. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-75351 Rev. *B
Page 18 of 30
CY7C1484BV33
Electrical Characteristics (continued)
Over the Operating Range
Parameter [12, 13]
Test Conditions
Min
Max
Unit
ISB3
Automatic CE Power Down
Current – CMOS Inputs
Description
VDD = Max, Device Deselected, 4 ns cycle,
VIN  0.3 V or VIN > VDDQ – 0.3 V, 250 MHz
f = fMAX = 1/tCYC
–
245
mA
ISB4
Automatic CE Power Down
Current – TTL Inputs
VDD = Max, Device Deselected,
VIN  VIH or VIN  VIL, f = 0
4 ns cycle,
250 MHz
–
135
mA
Capacitance
Parameter [15]
Description
CADDRESS
Address Input Capacitance
CDATA
CCTRL
Test Conditions
TA = 25 C, f = 1 MHz, VDD = 3.3 V, VDDQ = 2.5 V
165-ball FBGA Unit
Package
6
pF
Data Input Capacitance
5
pF
Control Input Capacitance
8
pF
CCLK
Clock Input Capacitance
6
pF
CIO
Input/Output Capacitance
5
pF
Thermal Resistance
Parameter [15]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
Test Conditions
Test conditions follow standard test methods and
procedures for measuring thermal impedance, per
EIA/JESD51.
165-ball FBGA Unit
Package
16.3
C/W
2.1
C/W
Note
15. Tested initially and after any design or process change that may affect these parameters.
Document Number: 001-75351 Rev. *B
Page 19 of 30
CY7C1484BV33
AC Test Loads and Waveforms
Figure 3. AC Test Loads and Waveforms
3.3 V I/O Test Load
R = 317
3.3V
OUTPUT
OUTPUT
RL = 50
Z0 = 50
GND
5 pF
R = 351
VL = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
2.5 V I/O Test Load
OUTPUT
RL = 50
Z0 = 50
Document Number: 001-75351 Rev. *B
INCLUDING
JIG AND
SCOPE
 1 ns
 1 ns
(c)
ALL INPUT PULSES
VDDQ
GND
5 pF
R = 1538
(b)
90%
10%
90%
(b)
VL = 1.25V
(a)
10%
R = 1667
2.5V
OUTPUT
ALL INPUT PULSES
VDDQ
10%
90%
10%
90%
 1 ns
 1 ns
(c)
Page 20 of 30
CY7C1484BV33
Switching Characteristics
Over the Operating Range
Parameter [16, 17]
Description
250 MHz
Unit
Min
Max
VDD(typical) to the First Access [18]
1
–
ms
tCYC
Clock Cycle Time
4
–
ns
tCH
Clock HIGH
2.0
–
ns
tCL
Clock LOW
2.0
–
ns
tPOWER
Clock
Output Times
tCO
Data Output Valid After CLK Rise
–
3.0
ns
tDOH
Data Output Hold After CLK Rise
1.3
–
ns
Clock to Low Z
[19, 20, 21]
1.3
–
ns
tCHZ
Clock to High Z
[19, 20, 21]
–
3.0
ns
tOEV
OE LOW to Output Valid
–
3.0
ns
0
–
ns
–
3.0
ns
tCLZ
tOELZ
tOEHZ
OE LOW to Output Low Z
[19, 20, 21]
OE HIGH to Output High Z
[19, 20, 21]
Setup Times
tAS
Address Setup Before CLK Rise
1.4
–
ns
tADS
ADSC, ADSP Setup Before CLK Rise
1.4
–
ns
tADVS
ADV Setup Before CLK Rise
1.4
–
ns
tWES
GW, BWE, BWX Setup Before CLK Rise
1.4
–
ns
tDS
Data Input Setup Before CLK Rise
1.4
–
ns
tCES
Chip Enable Setup Before CLK Rise
1.4
–
ns
tAH
Address Hold After CLK Rise
0.4
–
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.4
–
ns
tADVH
ADV Hold After CLK Rise
0.4
–
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.4
–
ns
tDH
Data Input Hold After CLK Rise
0.4
–
ns
tCEH
Chip Enable Hold After CLK Rise
0.4
–
ns
Hold Times
Notes
16. Timing reference level is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V.
17. Test conditions shown in (a) of Figure 3 on page 20 unless otherwise noted.
18. This part has an internal voltage regulator; tPOWER is the time that the power is supplied above VDD(minimum) initially before a read or write operation can be initiated.
19. tCHZ, tCLZ,tOELZ, and tOEHZ are specified with AC test conditions shown in part (b) of Figure 3 on page 20. Transition is measured ±200 mV from steady-state voltage.
20. At any supplied voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data
bus. These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve
High Z before Low Z under the same system conditions.
21. This parameter is sampled and not 100% tested.
Document Number: 001-75351 Rev. *B
Page 21 of 30
CY7C1484BV33
Switching Waveforms
Figure 4. Read Cycle Timing [22]
tCYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
tADH
ADSC
t AS
ADDRESS
tAH
A1
A2
t WES
GW, BWE,BW
A3
Burst continued with
new base address
tWEH
X
t CES
Deselect
cycle
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data Out (DQ)
High-Z
CLZ
t OEHZ
Q(A1)
t OEV
t CO
t OELZ
t DOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A3)
t CO
Single READ
BURST READ
DON’T CARE
Burst wraps around
to its initial state
UNDEFINED
Note
22. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH.
Document Number: 001-75351 Rev. *B
Page 22 of 30
CY7C1484BV33
Switching Waveforms (continued)
Figure 5. Write Cycle Timing [23, 24]
t CYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE,
BWX
t WES tWEH
GW
t CES
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data in (D)
High-Z
t
OEHZ
DS
t
DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 1)
D(A2 + 2)
D(A2 + 3)
D(A3)
D(A3 + 1)
D(A3 + 2)
Data Out (Q)
BURST READ
BURST WRITE
Single WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Notes
23. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH.
24. Full width write is initiated by either GW LOW; or by GW HIGH, BWE LOW, and BWX LOW.
Document Number: 001-75351 Rev. *B
Page 23 of 30
CY7C1484BV33
Switching Waveforms (continued)
Figure 6. Read/Write Cycle Timing [25, 26, 27]
t CYC
CLK
tCL
tCH
t ADS
tADH
t AS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
t WES tWEH
BWE, BW X
t CES
tCEH
CE
ADV
OE
t DS
tCO
Data In (D)
t OELZ
High-Z
tOEHZ
tCLZ
Data Out (Q)
tDH
High-Z
Q(A1)
Q(A2)
Back-to-Back READs
D(A5)
D(A3)
Q(A4)
BURST READ
Single WRITE
DON’T CARE
Q(A4+1)
Q(A4+2)
D(A6)
Q(A4+3)
Back-to-Back
WRITEs
UNDEFINED
Notes
25. On this diagram, when CE is LOW: CE1 is LOW, CE2 is HIGH, and CE3 is LOW. When CE is HIGH: CE1 is HIGH, CE2 is LOW, or CE3 is HIGH.
26. The data bus (Q) remains in High Z following a write cycle unless a new read access is initiated by ADSP or ADSC.
27. GW is HIGH.
Document Number: 001-75351 Rev. *B
Page 24 of 30
CY7C1484BV33
Switching Waveforms (continued)
Figure 7. ZZ Mode Timing [28, 29]
CLK
t ZZ
ZZ
I
t ZZREC
t ZZI
SUPPLY
I DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
28. Device must be deselected when entering ZZ mode. See Truth Table on page 8 for all possible signal conditions to deselect the device.
29. DQs are in High Z when exiting ZZ sleep mode.
Document Number: 001-75351 Rev. *B
Page 25 of 30
CY7C1484BV33
Ordering Information
Not all of the speed, package and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
250
Package
Diagram
Ordering Code
CY7C1484BV33-250BZXC
Part and Package Type
51-85165 165-ball FBGA (15 × 17 × 1.4 mm) Pb-free
Operating
Range
Commercial
Ordering Code Definitions
CY 7
C
1484 B V33 - 250
BZ
X C
Temperature range:
C = Commercial = 0 °C to +70 °C
X = Pb-free
Package Type:
BZ = 165-ball FBGA
Speed Grade: 250 MHz
V33 = 3.3 V
Process Technology: B  errata fix PCN084636
Part Identifier: 1484 = DCD, 2 M × 36 (72 Mb)
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-75351 Rev. *B
Page 26 of 30
CY7C1484BV33
Package Diagrams
Figure 8. 165-ball FBGA (15 × 17 × 1.40 mm) (0.45 Ball Diameter) Package Outline, 51-85165
51-85165 *D
Document Number: 001-75351 Rev. *B
Page 27 of 30
CY7C1484BV33
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CE
chip enable
CMOS
complementary metal-oxide-semiconductor
°C
degree Celsius
EIA
electronic industries alliance
MHz
megahertz
FBGA
fine-pitch ball grid array
µA
microampere
I/O
input/output
mA
milliampere
JEDEC
joint electron devices engineering council
mm
millimeter
JTAG
joint test action group
ms
millisecond
LSB
least significant bit
mV
millivolt
MSB
most significant bit
ns
nanosecond
OE
output enable

ohm
SRAM
static random access memory
%
percent
TAP
test access port
pF
picofarad
TCK
test clock
V
volt
TDI
test data-in
W
watt
TDO
test data-out
TMS
test mode select
TTL
transistor-transistor logic
Document Number: 001-75351 Rev. *B
Symbol
Unit of Measure
Page 28 of 30
CY7C1484BV33
Document History Page
Document Title: CY7C1484BV33, 72-Mbit (2 M × 36) Pipelined DCD Sync SRAM
Document Number: 001-75351
Rev.
ECN No.
Issue Date
Orig. of
Change
**
3478707
01/17/2012
GOPA
Description of Change
New data sheet.
*A
3508646
01/25/2012
GOPA
Changed status from Preliminary to Final.
*B
3862706
01/09/2013
PRIT
No technical updates. Completing Sunset review.
Document Number: 001-75351 Rev. *B
Page 29 of 30
CY7C1484BV33
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at Cypress Locations.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
cypress.com/go/clocks
psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
Touch Sensing
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
cypress.com/go/touch
USB Controllers
Wireless/RF
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2012-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-75351 Rev. *B
Revised January 9, 2013
All products and company names mentioned in this document may be the trademarks of their respective holders.
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