Zetex BCX5316 Pnp silicon planar medium power transistor Datasheet

SOT89 PNP SILICON PLANAR
MEDIUM POWER TRANSISTOR
BCX5316
ISSUE 4 – MARCH 2001
C
COMPLIMENTARY TYPE – BCX5616
PARTMARKING DETAIL – AL
E
C
B
SOT89
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
Collector-Base Voltage
V CBO
-100
V
Collector-Emitter Voltage
V CEO
-80
V
Emitter-Base Voltage
V EBO
Peak Pulse Current
I CM
Continuous Collector Current
IC
Power Dissipation at T amb=25°C
P tot
Operating and Storage Temperature Range
T j:T stg
VALUE
UNIT
-5
V
-1.5
A
-1
A
1
W
-65 to +150
°C
ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated).
PARAMETER
SYMBOL
MIN.
Collector-Base
Breakdown voltage
V (BR)CBO
-100
TYP.
MAX. UNIT
V
CONDITIONS.
IC =-100 µ A
Collector-Emitter
Breakdown Voltage
V (BR)CEO
-80
V
IC =-10mA
Emitter-Base
Breakdown Voltage
V (BR)EBO
-5
V
I E =-10 µ A
Collector Cut-Off
Current
I CBO
-0.1
-20
µA
µA
V CB =-30V
V CB =-30V, T amb =150°C
Emitter Cut-Off Current
I EBO
-10
µA
V EB =-4V
Collector-Emitter
Saturation Voltage
V CE(sat)
-0.5
V
I C =-500mA, I B =-50mA*
Base-Emitter Turn-On
Voltage
V BE(on)
-1.0
V
I C =-500mA, V CE =-2V*
Static Forward Current
Transfer Ratio
h FE
Transition Frequency
fT
Output Capacitance
C obo
25
100
25
I C =-5mA, V CE =-2V*
I C =-150mA, V CE =-2V*
I C =-500mA, V CE =-2V*
250
150
25
*Measured under pulsed conditions.
TBA
MHz
I C =-50mA, V CE =-10V,
f=100MHz
pF
V CB =-10V, f=1MHz
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