MOSFET Metal Oxide Semiconductor Field Effect Transistor CoolMOS CP 600V CoolMOS™ CP Power Transistor IPL60R385CP Data Sheet Rev. 2.0, 2010-10-01 Final Industrial & Multimarket 600V CoolMOS™ CP Power Transistor 1 IPL60R385CP Description The CoolMOS™ CP series offers devices which provide all benefits of a fast switching SJ MOSFET while not sacrificing ease of use. Extremely low switching and conduction losses make switching applications even more efficient, more compact, lighter, and cooler. ThinPAK ThinPAK is a a new leadless SMD package for HV MOSFETs. The new package has a very small footprint of only 64mm² (vs. 150mm² for the D2PAK) and a very low profile with only 1mm height (vs. 4.4mm for the D2PAK). The significantly smaller package size, combined with benchmark low parasitic inductances, provides designers with a new and effective way to decrease system solution size in power-density driven designs. drain pin 4 gate pin 1 driver source pin 2 Features • • • • • • • • bottom view Reduced board space consumption Increased power density Short commutation loop Smooth switching waveform easy to use products Extremely low losses due to very low FOM Rdson*Qg and Eoss Quallfied according to JEDEC1) for target applications (Server, Adapter) Pb-free plating, Halogen free power source pin 3 Applications: Server, Adapter Table 1 Key Performance Parameters Parameter Value Unit Related Links VDS @ Tj,max 650 V IFX CP Product Brief RDS(on),max 0.385 IFX CP Portfolio Qg,typ 17 nC IFX ThinPAK Webpage ID,pulse 27 A IFX Design tools Eoss @ 400V 3.2 µJ Body diode di/dt 400 A/µs Type Package Marking IPL60R385CP PG-VSON-4 6R385P 1) J-STD20 and JESD22 Final Data Sheet 2 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Table of Contents Table of Contents 1 Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 4 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 5 Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 6 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 7 Package outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Final Data Sheet 3 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Maximum ratings 2 Maximum ratings at Tj = 25 °C, unless otherwise specified. Table 2 Maximum ratings Parameter Symbol Continuous drain current 1) Values ID Min. Typ. Max. - - 9.0 Unit Note / Test Condition A TC= 25 °C 5.7 2) TC= 100°C Pulsed drain current ID,pulse - - 27 A TC=25 °C Avalanche energy, single pulse EAS - - 227 mJ ID=3.4 A,VDD=50 V (see table 17) Avalanche energy, repetitive2)3) EAR - - 0.34 Avalanche current, repetitive IAR - - 3.4 A MOSFET dv/dt ruggedness dv/dt - - 50 V/ns VDS=0...480 V Gate source voltage VGS -20 - 20 V static 2)3) -30 ID=3.4 A,VDD=50 V 30 AC (f>1 Hz) Power dissipation Ptot - - 83 W Operating temperature Tj -40 - 150 °C Storage temperature Tstg -40 - 125 °C Continuous diode forward current IS - - 9.0 A TC=25 °C IS,pulse - - 27 A TC=25 °C dv/dt - - 15 V/ns VDS=0...400 V, ISD ID, Tj=25 °C Maximum diode commutation dif/dt speed4) 1) Limited by Tj,max. Maximum duty cycle 2) Pulse width tp limited by Tj,max - - 400 A/µs (see table 18) 2) Diode pulse current Reverse diode dv/dt 4) TC=25 °C 3) Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f. 4) Identical low side and high side switch with identical RG 3 Thermal characteristics Table 3 Thermal characteristics Parameter Symbol Values Unit Min. Typ. Max. Thermal resistance, junction - case RthJC - - 1.5 Thermal resistance, junction ambient RthJA - - 45 Reflow soldering temperature Tsold - - 260 Note / Test Condition °C/W SMD version, device on PCB, 6cm2 cooling area1) °C reflow MSL 3 1) Device on 40mm*40mm*1.5mm one layer epoxy PCB FR4 with 6cm2 copper area (thickness 70µm) for drain connection. PCB is vertical without air stream cooling. Final Data Sheet 4 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Electrical characteristics 4 Electrical characteristics Electrical characteristics, at Tj=25 °C, unless otherwise specified. Table 4 Static characteristics Parameter Symbol Drain-source breakdown voltage V(BR)DSS Values Min. Typ. Max. 600 - - Unit Note / Test Condition V VGS=0 V, ID=0.25 mA Gate threshold voltage VGS(th) 2.5 3 3.5 Zero gate voltage drain current IDSS - - 1 - 10 - - - 100 nA VGS=20 V, VDS=0 V - 0.35 0.385 VGS=10 V, ID=5.2 A, Tj=25 °C - 0.90 - - 1.8 - Gate-source leakage current IGSS Drain-source on-state resistance RDS(on) Gate resistance Table 5 RG VDS=VGS, ID=0.34 mA VDS=600 V, VGS=0 V, Tj=25 °C µA VDS=600 V, VGS=0 V, Tj=150 °C VGS=10 V, ID=5.2 A, Tj=150 °C f=1 MHz, open drain Dynamic characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition pF VGS=0 V, VDS=100 V, f=1 MHz Input capacitance Ciss - 790 - Output capacitance Coss - 38 - Effective output capacitance, energy related1) Co(er) - 36 - VGS=0 V, VDS=0...480 V Effective output capacitance, time related2) Co(tr) - 96 - ID=constant, VGS=0 V VDS=0...480V Turn-on delay time td(on) - 10 - Rise time tr - 5 - Turn-off delay time td(off) - 40 - ns VDD=400 V, VGS=13 V, ID=5.2 A, RG= 3.3 see table 16) Fall time tf 5 1) Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS 2) Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS Final Data Sheet 5 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Electrical characteristics Table 6 Gate charge characteristics Parameter Symbol Values Min. Typ. Max. Gate to source charge Qgs - 4 - Gate to drain charge Qgd - 6 - Gate charge total Qg - 17 - Gate plateau voltage Vplateau - 5 - Table 7 Unit Note / Test Condition nC VDD=480 V, ID=5.2 A, VGS=0 to 10 V V Reverse diode characteristics Parameter Symbol Values Min. Typ. Max. Unit Note / Test Condition Diode forward voltage VSD - 0.9 - V VGS=0 V, IF=5.2 A, Tj=25 °C Reverse recovery time trr - 260 - ns Reverse recovery charge Qrr - 3.1 - µC Peak reverse recovery current Irrm - 24 - A VR=400 V, IF=5.2 A, diF/dt=100 A/µs (see table 18) Final Data Sheet 6 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP 5 Electrical characteristics diagrams Electrical characteristics diagrams Table 8 Power dissipation Max. transient thermal impedance Ptot = f(TC) Z(thJC)=f(tp); parameter: D=tp/T Table 9 Safe operating area TC=25 °C Safe operating area TC=80 °C ID=f(VDS); TC=25 °C; D=0; parameter tp Final Data Sheet ID=f(VDS); TC=80 °C; D=0; parameter tp 7 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Electrical characteristics diagrams Table 10 Typ. output characteristics Tj=25 °C Typ. output characteristics Tj=125 °C ID=f(VDS); Tj=25 °C; parameter: VGS ID=f(VDS); Tj=125 °C; parameter: VGS Table 11 Typ. drain-source on-state resistance Drain-source on-state resistance RDS(on)=f(ID); Tj=125 °C; parameter: VGS RDS(on)=f(Tj); ID=5.2 A; VGS=10 V Final Data Sheet 8 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Electrical characteristics diagrams Table 12 Typ. transfer characteristics Typ. gate charge ID=f(VGS); VDS=20V VGS=f(Qgate), ID=5.2 A pulsed Table 13 Avalanche energy Drain-source breakdown voltage EAS=f(Tj); ID=3.4 A; VDD=50 V VBR(DSS)=f(Tj); ID=0.25 mA Final Data Sheet 9 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Electrical characteristics diagrams Table 14 Typ. capacitances Typ. Coss stored energy C=f(VDS); VGS=0 V; f=1 MHz EOSS=f(VDS) Table 15 Forward characteristics of reverse diode IF=f(VSD); parameter: Tj Final Data Sheet 10 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Test circuits 6 Test circuits Table 16 Switching times test circuit and waveform for inductive load Switching times test circuit for inductive load Switching time waveform VDS 90% VDS VGS 10% VGS td(on) td(off) tr ton Table 17 tf toff Unclamped inductive load test circuit and waveform Unclamped inductive load test circuit Unclamped inductive waveform V(BR)DS ID VD VDS VDS VDS ID Table 18 Test circuit and waveform for diode characteristics Test circuit for diode characteristics Diode recovery waveform ID i v diF /d t R G1 ΙF VDS RG2 Ι RRM trr = tS + tF Q rr = Q S + Q F trr tS tF QS 10% Ι RRM QF d irr /d t 90% Ι RRM RG1 = RG2 Final Data Sheet v 11 t VRRM SIL00088 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Package outlines 7 Package outlines Figure 1 Outlines ThinPAK 8x8, dimensions in mm/inches Final Data Sheet 12 Rev. 2.0, 2010-10-01 600V CoolMOS™ CP Power Transistor IPL60R385CP Revision History 8 Revision History Revision History: 2010-10-01, Rev. 2.0 Previous Revision: Page Subjects (major changes since last revision) 2.0 Release of final data sheet We Listen to Your Comments Any information within this document that you feel is wrong, unclear or missing at all? Your feedback will help us to continuously improve the quality of this document. Please send your proposal (including a reference to this document) to: [email protected] Edition 2010-10-01 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Final Data Sheet 13 Rev. 2.0, 2010-10-01