Transient Voltage Suppressors for ESD Protection Low Capacitance ESDXXV32D-LC Series Description SOD-323 The ESDXXV32D-LC is designed to protect voltage sensitive components from ESD and transient voltage events. Excellent clamping capability, low leakage, and fast response time, make these parts ideal for ESD protection on designs where board space is at a premium. Because of its small size, ultra-low capacitance values , it is very suitable for signal port and board space speed transmission is very small places, such as Ethernet, mobile phones , MP3 players, digital cameras and other portable. Feature Functional Diagram u 350 Watts Peak Pulse Power per Line (tp=8/20μs) u Protects one I/O line (bidirectional) u Low clamping voltage u Working voltages: 3V, 5V, 8V, 12V, 15V, 24V u Low leakage current u IEC61000-4-2 (ESD) ±15kV (air), ±8kV (contact) u IEC61000-4-4 (EFT) 40A (5/50ηs) u IEC61000-4-5 (Lightning) 12A (8/20μs) Applications u Cell Phone Handsets and Accessories u Microprocessor based equipment u Personal Digital Assistants (PDA’s) u Notebooks, Desktops, and Servers u Portable Instrumentation u Peripherals u USB Interface Mechanical Characteristics u JEDEC SOD-323 Package u Molding Compound Flammability Rating : UL 94V-0 u Weight 5.0 Milligrams (Approximate) u Quantity Per Reel : 3,000pcs u Reel Size : 7 inch u Lead Finish : Lead Free Mechanical Characteristics Symbol Parameter Value Units 350 W PPP Peak Pulse Power (tp=8/20μs waveform) TL Lead Soldering Temperature 260 (10sec) ºC TSTG Storage Temperature Range -55 to +150 ºC Operating Temperature Range -55 to +150 ºC TJ Air Discharge ±15 Contact Discharge ±8 IEC61000-4-2 (ESD) IEC61000-4-4 (EFT) 40 A IEC61000-4-5 ( Lightning ) 12 A UN Semiconductor Co., Ltd. Revision January 06, 2014 KV www.unsemi.com.tw 1/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection Low Capacitance ESDXXV32D-LC Series I-V Curve Characteristics Symbol Parameter Bi-directional IPP Maximum Reverse Peak Pulse Current VC Clamping Voltage VRWM I IPP @ IPP Working Peak Reverse Voltage IR Maximum Reverse leakage Current IT Test Current VB Breakdown Voltage @ VRWM VC IT VBR VRW R V IR IT IR VRW VBR VC R @ IT IPP Electrical Characteristics (@ 25℃ Unless Otherwise Specified ) Device Marking VRWM (V) (Max.) VB (V) (Min.) IT (mA) VC @1A (Max.) (Max.) ESD03V32D-LC CC 3.0 4.0 1 5.15 ESD05V32D-LC AC 5.0 6.0 1 ESD08V32D-LC BC 8.0 8.5 ESD12V32D-LC DC 12.0 ESD15V32D-LC EC ESD24V32D-LC HC Part Number (@A) IR (μA) (Max.) C (pF) (Typ.) 13.9 8 20 1.2 9.80 18.3 8 5 1.2 1 13.40 18.5 8 2 1.2 13.3 1 19.00 28.6 6 1 1.2 15.0 16.7 1 24.00 31.8 5 1 1.2 24.0 26.7 1 43.00 56.0 3 1 1.2 VC Characteristic Curves Fig1. 8/20μs Pulse Waveform Fig2. ESD Pulse Waveform (according to IEC 61000-4-2) tr 100 Peak Value IPP 80 100% TEST WAVEFORM PARAMETERS tr=8μs td=20μs Percent of Peak Pulse Current % IPP - Peak Pulse Current - % of IPP 120 60 40 td=t IPP/2 20 0 0 5 10 15 20 25 10% tr = 0.7~1ns Time (ns) 30ns 30 60ns t - Time (μs) UN Semiconductor Co., Ltd. Revision January 06, 2014 90% www.unsemi.com.tw 2/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information. Transient Voltage Suppressors for ESD Protection Low Capacitance ESDXXV32D-LC Series Characteristic Curves Fig3. ESD Clamping (+8KV Contac per IEC61000-4-2) Fig4. ESD Clamping (-8KV Contac per IEC61000-4-2) SOD-323 Package Outline & Dimensions Millimeters Inches Symbol Min. Nom. Max. Min. Nom. Max. A 0.80 0.90 1.00 0.031 0.035 0.040 A1 0.00 0.05 0.10 0.000 0.002 0.004 A3 Soldering Footprint 0.006 REF b 0.25 0.32 0.40 0.010 0.012 0.016 C 0.089 0.12 0.177 0.003 0.005 0.007 D 1.60 1.70 1.80 0.062 0.066 0.070 E 1.15 1.25 1.35 0.045 0.049 0.053 L 0.08 HE 2.30 0.098 0.105 0.003 2.50 2.70 0.090 Symbol Millimeters Inches F 1.60 0.063 G 2.85 0.112 J 0.83 0.033 K 0.63 0.025 UN Semiconductor Co., Ltd. Revision January 06, 2014 0.15 REF www.unsemi.com.tw 3/3 @ UN Semiconductor Co., Ltd. 2014 Specifications are subject to change without notice. Please refer to www.unsemi.com.tw for current information.