CMT04N60 POWER MOSFET GENERAL DESCRIPTION FEATURES This advanced high voltage MOSFET is designed to Higher Current Rating withstand high energy in the avalanche mode and switch Lower Rds(on) efficiently. This new high energy device also offers a Lower Capacitances drain-to-source diode with fast recovery time. Designed for Lower Total Gate Charge high voltage, high speed switching applications such as Tighter VSD Specifications power supplies, converters, power motor controls and Avalanche Energy Specified bridge circuits. PIN CONFIGURATION SYMBOL Front View SOURCE Front View DRAIN TO-252 GATE TO-220/TO-220FP D G S 1 2 3 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS Rating Drain to Current － Continuous － Pulsed Gate-to-Source Voltage － Continue － Non-repetitive Total Power Dissipation Symbol Value Unit ID 4.0 A IDM 14 VGS ±30 V VGSM ±40 V PD W TO-220 83 TO-220FP 30 Operating and Storage Temperature Range Single Pulse Drain-to-Source Avalanche Energy － TJ = 25℃ TJ, TSTG -55 to 150 ℃ EAS 80 mJ θJC 1.30 ℃/W θJA 100 TL 260 (VDD = 100V, VGS = 10V, IL = 4A, L = 10mH, RG = 25Ω) Thermal Resistance － Junction to Case － Junction to Ambient Maximum Lead Temperature for Soldering Purposes, 1/8” from case for 10 seconds 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation ℃ Page 1 CMT04N60 POWER MOSFET ORDERING INFORMATION Part Number Package CMT04N60GN220* TO-220 CMT04N60XN220* TO-220 CMT04N60GN220FP* TO-220 Full Package CMT04N60XN220FP* TO-220 Full Package CMT04N60GN252* TO-252 CMT04N60XN252* TO-252 *Note: G : Suffix for Pb Free Product X : Suffix for Halogen and Pb Free Product ELECTRICAL CHARACTERISTICS (Unless otherwise specified, TJ = 25℃.) CMT04N60 Characteristic Drain-Source Breakdown Voltage Symbol Min V(BR)DSS 600 Typ Max Units V (VGS = 0 V, ID = 250 μA) Drain-Source Leakage Current IDSS uA (VDS =600 V, VGS = 0 V) 1 Gate-Source Leakage Current-Forward IGSSF 100 nA IGSSR 100 nA 4.0 V 2.2 Ω (Vgsf = 30 V, VDS = 0 V) Gate-Source Leakage Current-Reverse (Vgsr = - 30 V, VDS = 0 V) Gate Threshold Voltage VGS(th) 2.0 (VDS = VGS, ID = 250 μA) Static Drain-Source On-Resistance (VGS = 10 V, ID = 2.0A) * RDS(on) Forward Transconductance (VDS = 50 V, ID = 2.0 A) * gFS Input Capacitance Ciss 540 760 Coss 125 180 pF pF Crss 8.0 20 pF td(on) 12 20 Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge (VDS = 25 V, VGS = 0 V, f = 1.0 MHz) (VDD = 300 V, ID = 4.0 A, VGS = 10 V, RG = 9.1Ω) * (VDS = 480 V, ID = 4.0 A, VGS = 10 V)* Internal Drain Inductance 2.5 mhos tr 7.0 10 ns ns td(off) 19 40 ns tf 10 20 ns 10 Qg 5.0 Qgs 2.7 nC nC Qgd 2.0 nC LD 4.5 nH LS 7.5 nH (Measured from the drain lead 0.25” from package to center of die) Internal Drain Inductance (Measured from the source lead 0.25” from package to source bond pad) SOURCE-DRAIN DIODE CHARACTERISTICS Forward On-Voltage(1) Forward Turn-On Time Reverse Recovery Time (IS = 4.0 A, dIS/dt = 100A/μs) VSD 1.5 V ton ** ns trr 655 ns * Pulse Test: Pulse Width ≦300μs, Duty Cycle ≦2% ** Negligible, Dominated by circuit inductance 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 2 CMT04N60 POWER MOSFET TYPICAL CHARACTERISTICS 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 3 CMT04N60 POWER MOSFET 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 4 CMT04N60 POWER MOSFET TO-220 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 5 CMT04N60 POWER MOSFET PACKAGE DIMENSION TO-220 TO-220FP 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 6 CMT04N60 POWER MOSFET TO-252 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 7 CMT04N60 POWER MOSFET IMPORTANT NOTICE Champion Microelectronic Corporation (CMC) reserves the right to make changes to its products or to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. A few applications using integrated circuit products may involve potential risks of death, personal injury, or severe property or environmental damage. CMC integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life-support applications, devices or systems or other critical applications. Use of CMC products in such applications is understood to be fully at the risk of the customer. In order to minimize risks associated with the customer’s applications, the customer should provide adequate design and operating safeguards. HsinChu Headquarter Sales & Marketing 5F, No. 11, Park Avenue II, Science-Based Industrial Park, HsinChu City, Taiwan T E L : +886-3-567 9979 F A X : +886-3-567 9909 21F., No. 96, Sec. 1, Sintai 5th Rd., Sijhih City, Taipei County 22102, Taiwan R.O.C T E L : +886-2-2696 3558 F A X : +886-2-2696 3559 2011/03/23 Rev. 1.5 Champion Microelectronic Corporation Page 8