LASER DIODE NX5320EH 1 310 nm AlGaInAs MQW-FP LASER DIODE FOR 4 Gb/s FIBER CHANNEL APPLICATION DESCRIPTION The NX5320EH is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. APPLICATION • 4 G fiber channel FEATURES • Optical output power Po = 7.0 mW • Low threshold current lth = 8 mA • Differential efficiency ηd = 0.35 W/A • Wide operating temperature range TC = −30 to +85°C • InGaAs monitor PIN-PD • CAN package φ 5.6 mm • Focal point 5.8 mm Document No. PL10660EJ01V0DS (1st edition) Date Published May 2007 NS CP(N) 2007 NX5320EH PACKAGE DIMENSIONS (UNIT: mm) φ 5.6+0.00 –0.03 *2 (φ 4.2) *2 1.0±0.1 BOTTOM VIEW 1 (0.3) 110˚±2˚ *2 (φ 3.55) 2 4 3 *2 (0.3) *1 Focal Point ∆ x = ±300 µ m MAX. ∆ y = ±300 µ m MAX. 5.80±0.5 2.97±0.2 15.0±1.0 1.2±0.1 3.87±0.3 φ 2.0 PIN CONNECTIONS LD 4 2 4– φ 0.45 PD 3 φ 2.0 *1 Focal Point: A point to get maximum optical output power from fiber. *2 ( ) indicates nominal dimension. 2 1 (Case) Reference Plane Data Sheet PL10660EJ01V0DS NX5320EH ORDERING INFORMATION Part Number NX5320EH-AZ* Package Pin Connections 1 4-pin CAN with ball lens cap LD 4 2 PD 3 *Note Please refer to the last page of this data sheet “Compliance with EU Directives for Pb-Free RoHS Compliance Information. Remarks 1. The color of ball lens cap might be observed differently. 2. The hermetic test will be performed as AQL 1.0%. Data Sheet PL10660EJ01V0DS 3 NX5320EH ABSOLUTE MAXIMUM RATINGS Parameter Symbol Ratings Unit Optical Output Power Po 15 mW Forward Current of LD IF 120 mA Reverse Voltage of LD VR 2.0 V Forward Current of PD IF 10 mA Reverse Voltage of PD VR 20 V Operating Case Temperature TC −30 to +85 °C Storage Temperature Tstg −40 to +85 °C Lead Soldering Temperature Tsld 350 (3 sec.) °C Relative Humidity (noncondensing) RH 85 % RECOMMENDED OPERATING CONDITION Parameter Symbol Bias Current Ibias Conditions TC = 25°C, refer to below Pf (mW) Ex = 10 log P1 [dB] P0 P1 P0 Imod IF 0 Ibias 4 (mA) Data Sheet PL10660EJ01V0DS MIN. TYP. Ith +12.5 MAX. Unit mA NX5320EH ELECTRO-OPTICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified) Parameter Operating Voltage Symbol Vop Conditions MIN. CW, Po = 7.0 mW, TC = +25°C TYP. MAX. Unit 1.3 1.6 V CW, Po = 7.0 mW Threshold Current Ith CW, TC = +25°C CW Differential Efficiency Center Wavelength Temperature Dependence of Slope ηd λC ∆η Efficiency 2.0 8 2 20 mA 40 CW, TC = +25°C 0.25 CW 0.12 0.65 1 278 1 350 nm −3.0 1.5 dB Po = 7.0 mW, RMS (−20 dB) ∆η = 10 log ηd (@ 85°C) 0.35 0.50 W/A ηd (@ 25°C) Spectral Width σ Po = 7.0 mW, RMS (−20 dB) 2 nm Rise Time tr 20-80% 90 ps Fall Time tf 80-20% 90 ps −120 dB/Hz 2 000 µA 500 nA 20 pF Relative Intensity Noise RIN Under modulation Monitor Current Im VR = 1.5 V, Po = 7.0 mW Monitor Dark Current ID VR = 5 V Monitor PD Terminal Capacitance Ct VR = 5 V, f = 1 MHz Data Sheet PL10660EJ01V0DS 200 6 5 NX5320EH TYPICAL CHARACTERISTICS (TC = −30 to +85°C, unless otherwise specified) OPERATING CURRENT AND THRESHOLD CURRENT vs. CASE TEMPERATURE OPTICAL OUTPUT POWER vs. FORWARD CURRENT 100 +25˚C TC = –30˚C +85˚C Operating Current Iop (mA), Threshold Current Ith (mA) Optical Output Power Po (mW) 10 7.5 5 2.5 10 0 20 30 40 50 60 50 Iop Ith 10 5 1 –40 TEMPERATURE DEPENDENCE OF CENTER WAVELENGTH Center Wavelength λC (nm) 1 350 1 340 1 330 1 320 1 310 1 300 1 290 1 280 –20 0 20 40 60 80 100 Case Temperature TC (˚C) Remark The graphs indicate nominal characteristics. 6 0 20 40 60 Case Temperature TC (˚C) Forward Current IF (mA) 1 270 –40 –20 Data Sheet PL10660EJ01V0DS 80 100 NX5320EH TYPICAL CHARACTERISTICS (TC = 25°C, unless otherwise specified) FORWARD CURRENT vs. FORWARD VOLTAGE OPTICAL OUTPUT POWER vs. MONITOR CURRENT 10 Optical Output Power Po (mW) Forward Current IF (mA) 50 40 30 20 10 0 0.5 1 1.5 2 5 0 300 600 900 1 200 1 500 Monitor Current Im (µA) Forward Voltage VF (V) SPECTRUM 0 Relative Intensity (dB) –10 –20 –30 –40 –50 –60 –70 –80 1 280 1 290 1 300 1 310 1 320 1 330 Wavelength λ (nm) Remark The graphs indicate nominal characteristics. Data Sheet PL10660EJ01V0DS 7 NX5320EH REFERENCE Document Name Opto-Electronics Devices Pamphlet 8 Document No. PX10160E Data Sheet PL10660EJ01V0DS NX5320EH • The information in this document is current as of May, 2007. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. • No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. 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M8E 02. 11-1 Data Sheet PL10660EJ01V0DS 9 NX5320EH SAFETY INFORMATION ON THIS PRODUCT DANGER SEMICONDUCTOR LASER INVISIBLE LASER RADIATION AVOID DIRECT EXPOSURE TO BEAM OUTPUT POWER mW MAX WAVELENGTH nm CLASS lllb LASER PRODUCT Warning Laser Beam AVOID EXPOSURE-Invisible Laser Radiation is emitted from this aperture A laser beam is emitted from this diode during operation. The laser beam, visible or invisible, directly or indirectly, may cause injury to the eye or loss of eyesight. • Do not look directly into the laser beam. • Avoid exposure to the laser beam, any reflected or collimated beam. Caution GaAs Products This product uses gallium arsenide (GaAs). GaAs vapor and powder are hazardous to human health if inhaled or ingested, so please observe the following points. • Follow related laws and ordinances when disposing of the product. If there are no applicable laws and/or ordinances, dispose of the product as recommended below. 1. Commission a disposal company able to (with a license to) collect, transport and dispose of materials that contain arsenic and other such industrial waste materials. 2. Exclude the product from general industrial waste and household garbage, and ensure that the product is controlled (as industrial waste subject to special control) up until final disposal. • Do not burn, destroy, cut, crush, or chemically dissolve the product. • Do not lick the product or in any way allow it to enter the mouth. 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. 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