AP20N15AGP-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
N-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
▼ RoHS Compliant & Halogen-Free
BVDSS
150V
RDS(ON)
100mΩ
ID
G
20.5A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the
best combination of fast switching, ruggedized device design, low onresistance and cost-effectiveness.
The TO-220 package is widely preferred for commercial-industrial
power through hold applications. The low thermal resistance and low
package cost contribute to the world wide papular package.
G
D
TO-220(P)
S
Absolute Maximum Ratings
Parameter
Symbol
Rating
Units
VDS
Drain-Source Voltage
150
V
VGS
Gate-Source Voltage
+20
V
ID@TC=25℃
Continuous Drain Current, V GS @ 10V
20.5
A
ID@TC=100℃
Continuous Drain Current, V GS @ 10V
13
A
80
A
89.2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Parameter
Rthj-c
Maximum Thermal Resistance, Junction-case
Rthj-a
Maixmum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
Value
Units
1.4
℃/W
62
℃/W
1
201202211
AP20N15AGP-HF
o
Electrical Characteristics@Tj=25 C(unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max. Units
BVDSS
Drain-Source Breakdown Voltage
VGS=0V, ID=250uA
150
-
-
V
RDS(ON)
Static Drain-Source On-Resistance 2
VGS=10V, ID=10A
-
-
100
mΩ
VGS=4.5V, ID=6A
-
-
110
mΩ
V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
1
-
3
VDS=10V, ID=10A
-
28
-
S
gfs
Forward Transconductance
IDSS
Drain-Source Leakage Current
VDS=120V, VGS=0V
-
-
25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=14A
-
17.5
28
nC
Qgs
Gate-Source Charge
VDS=120V
-
5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=4.5V
-
9
-
nC
td(on)
Turn-on Delay Time
VDS=75V
-
8
-
ns
tr
Rise Time
ID=14A
-
20
-
ns
td(off)
Turn-off Delay Time
RG=10Ω
-
70
-
ns
tf
Fall Time
VGS=10V
-
55
-
ns
Ciss
Input Capacitance
VGS=0V
-
1600 2560
pF
Coss
Output Capacitance
VDS=25V
-
240
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
5
-
pF
Rg
Gate Resistance
f=1.0MHz
-
1.2
2.4
Ω
Min.
Typ.
IS=10A, VGS=0V
-
-
1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
Max. Units
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=14A, VGS=0V,
-
135
-
ns
Qrr
Reverse Recovery Charge
dI/dt=100A/µs
-
740
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP20N15AGP-HF
50
40
T C = 25 o C
ID , Drain Current (A)
40
ID , Drain Current (A)
T C = 150 o C
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
20
10V
7.0V
6.0V
5.0V
V G = 4.0V
30
20
10
10
0
0
0
4
8
12
0
16
4
8
12
16
20
V DS , Drain-to-Source Voltage (V)
V DS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
80
2.4
I D =10A
I D =10A
V G =10V
T C =25 o C
2.0
Normalized RDS(ON)
RDS(ON) (mΩ)
76
72
1.6
1.2
68
0.8
64
0.4
2
4
6
8
10
-50
0
50
100
150
o
V GS Gate-to-Source Voltage (V)
T j , Junction Temperature ( C)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
10
I D =250uA
1.6
6
T j =150 o C
Normalized VGS(th)
IS(A)
8
T j =25 o C
4
1.2
0.8
0.4
2
0
0.0
0
0.2
0.4
0.6
0.8
1
1.2
V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.4
-50
0
50
100
150
o
T j , Junction Temperature ( C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP20N15AGP-HF
f=1.0MHz
2400
10
I D =14A
V DS =120V
2000
C iss
1600
6
C (pF)
VGS , Gate to Source Voltage (V)
8
1200
4
800
2
400
0
C oss
C rss
0
0
10
20
30
40
1
5
9
Q G , Total Gate Charge (nC)
17
21
25
29
V DS ,Drain-to-Source Voltage (V)
Fig 7. Gate Charge Characteristics
Fig 8. Typical Capacitance Characteristics
1
100
Normalized Thermal Response (Rthjc)
Operation in this
area limited by
RDS(ON)
100us
ID (A)
13
10
1ms
10ms
100ms
DC
1
o
T c =25 C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
t
0.02
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
1000
0.00001
0.0001
0.001
V DS , Drain-to-Source Voltage (V)
0.01
0.1
1
10
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
32
ID , Drain Current (A)
VG
QG
24
4.5V
QGS
16
QGD
8
Charge
Q
0
25
50
75
100
T C , Case Temperature (
125
o
150
C)
Fig 11. Maximum Continuous Drain Current
v.s. Case Temperature
Fig 12. Gate Charge Waveform
4