Advanced Analog Technology, Inc. AAT8660 Series Product information presented is current as of publication date. Details are subject to change without notice. ONE-CELL LI-ION BATTERY PROTECTION IC FEATURES GENERAL DESCRIPTION z Ideal for One-Cell Rechargeable Li-Ion Battery Packs z High Accuracy Voltage Detection z Low Current Consumption: The AAT8660 series are designed to protect one-cell rechargeable Li-Ion battery pack against over-charge, over-discharge, over-current and short circuit. They use CMOS process to provide high accuracy voltage detection and low current consumption. Each of the AAT8660 devices incorporates voltage comparators, bandgap reference voltage generator, signal delay circuit, short circuit detector, and digital control circuit. In the charge process, when the battery voltage is charged to a value greater than VC1 (Over-Charge Threshold Voltage), the output of C out pin 3μA Supply Current (Typical) 0.1μA Shutdown Current z 3-Level Over Current Detection: Over-Current Level 1 /Over Current Level 2 / Short Circuit z Wide Operating − 40οC to + 85οC z Small SOT26 Package Temperature Range: switches to the low level, i.e., the VN pin level. The output of C out pin will switch to high level PIN CONFIGURATION D out GND VN V DD C out NULL when the battery voltage falls lower than VC2 (Over-Charge Release Voltage), or when the charger is disconnected from the battery pack and the battery voltage level ranges between VC1 and VC2. During the discharge process, when the battery voltage drops to a value lower than VD1 (Over-Discharge Threshold Voltage), the output of D out pin switches to low level immediately after the internal delay time elapses. The output of D out pin will switch to high level when the battery voltage is at a level higher than VD 2 (Over-Discharge Release Voltage). – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 1 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series Over current level 1 voltage ( VOC1 ) is used to monitor the amount of discharge current. If the discharge current is high enough to cause VN pin voltage increase to a value greater than VOC1 , the output of D out pin will switch to a low level after a delay time t OC1 . If the load is removed from battery pack, the output of D out will identical to a discharge current. If the short circuit current is high enough to cause VN pin voltage increase to greater than Vshort , the output of D out pin will move to the low level after a delay time t short , and the output of D out level will change to high when the load is removed from battery pack. change to a high level again. The mechanism of short circuit protection is BLOCK DIAGRAM: VDD D out C out GND VN – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 2 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PIN DESCRIPTION PIN NO NAME I/O DESCRIPTION 1 D out O Discharge Control Pin which Connects to External MOSFET Gate 2 3 VN C out NULL VDD GND I O Voltage Detection Pin between VN and GND Charge Control Pin which Connects to External MOSFET Gate. ╳ I Null Pad. Power Supply Input Pin 4 5 6 I Ground ABSOLUTE MAXIMUM RATINGS CHARACTERISTICS SYMBOL VALUE UNIT Supply Voltage VDD −0.3 to 8.0 V VN Pin Input Voltage VVN VDD − 20 to VDD + 0.3 V D out Pin Output Voltage VDout −0.3 to VDD + 0.3 V C out Pin Output Voltage VCout VVN − 0.3 to VDD + 0.3 Power Dissipation Pd 150 V mW Operating Temperature Range TC −40 to +85 Storage Temperature Range Tstorage −40 to +125 ο C ο C RECOMMENDED OPERATING CONDITIONS PARAMETER TEST CONDITION MIN MAX UNIT Voltage Defined as VDD to GND 1.5 7.0 V D out Output Voltage GND VDD V C out Output Voltage VN VDD V Supply Voltage, VDD OPERATION VOLTAGE AND OPERATION CURRENT PARAMETER Supply Current at Normal Operation Mode Standby Current at Power Down Mode TEST CONDITION - Operation Voltage between VDD and VN – MIN VDD =3.3V; VN=0V; GND=0V TYP MAX UNIT 3.0 6.0 μA - 0.1 μA 20.0 V 1.5 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 3 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660A DETECTION VOLTAGE AND DELAY TIME ( 25 ο C ) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.4V MIN TYP MAX UNIT 4.275 4.325 4.375 V VC1-0.15 V VC1-0.35 VC1-0.25 2.420 2.500 2.580 V VD1+0.3 VD1+0.4 VD1+0.5 V 0.700 1.000 1.300 s 125.0 162.5 ms 150 170 mV 500 600 mV VDD −1.3 VDD − 0.9 V 87.5 Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 130 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short VDD = 3.0V 10 50 μs Charger Detection Voltage VCHR −2.0 −1.3 −0.6 V C out High Level Resistance R COH 1 2 10 kΩ C out Low Level Resistance R COL 150 602 2,380 kΩ D out High Level Resistance R DOH 2.5 5.0 10.0 kΩ D out Low Level Resistance R DOL 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN = 0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN = 3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD< VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 4 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660B DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP MAX UNIT 4.300 4.350 4.400 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.220 2.300 2.380 V VD1+0.6 VD1+0.7 VD1+0.8 V 0.088 0.125 0.163 s 22.4 32.0 41.6 ms 130 150 170 mV 400 500 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 2.8 4.0 5.2 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short VDD = 3.0V 10 50 μs Charger Detection Voltage VCHR −2.0 −1.3 −0.6 V C out High Level Resistance R COH 1 2 10 kΩ C out Low Level Resistance R COL 150 602 2,380 kΩ D out High Level Resistance R DOH 2.5 5.0 10.0 kΩ D out Low Level Resistance R DOL 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN = 0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN = 3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C OUT = 3.0V ; VN = 0V VDD = 4.5V ; C OUT = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 5 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660C DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V MIN TYP MAX UNIT 4.250 4.300 4.350 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.220 2.300 2.380 V VD1-0.08 VD1 VD1+0.08 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 100 120 mV 480 600 mV VDD − 1.3 VDD − 0.9 V 10.4 ms 2.0 2.0 2.6 3.4 ms ms 10 50 μs −2.0 −1.3 −0.6 V 1 2 10 kΩ 150 602 2,380 kΩ 2.5 5.0 10.0 kΩ 2.5 5.0 10.0 kΩ Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 80 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 Short Circuit Detection Delay Time t short VDD = 3.0V Charger Detection Voltage VCHR C out High Level Resistance R COH C out Low Level Resistance R COL D out High Level Resistance R DOH D out Low Level Resistance R DOL Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN = 0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN = 3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V 8.0 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 6 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660D DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge Voltage Detect Falling Edge Voltage Detect Falling Edge Voltage Detect Rising Edge Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V of Supply of Supply of Supply of Supply Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP MAX UNIT 4.230 4.280 4.330 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.201 2.281 2.361 V VD1-0.08 VD1 VD1+0.08 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 110 130 150 mV 400 490 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short VDD = 3.0V 10 50 μs Charger Detection Voltage VCHR −2.0 −1.3 −0.6 V C out High Level Resistance R COH 1 2 10 kΩ C out Low Level Resistance R COL 150 602 2,380 kΩ D out High Level Resistance R DOH 2.5 5.0 10.0 kΩ D out Low Level Resistance R DOL VDD = 1.8V ; D out = 0.5V ; VN = 1.8V 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN = 3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 7 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660E DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge Voltage Detect Falling Edge Voltage Detect Falling Edge Voltage Detect Rising Edge Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V of Supply of Supply of Supply of Supply Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP MAX UNIT 4.230 4.280 4.330 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.201 2.281 2.361 V VD1+0.5 VD1+0.6 VD1+0.7 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 80 100 120 mV 400 480 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short 10 50 μs Charger Detection Voltage VCHR -2.0 -1.3 -0.6 V C out High Level Resistance R COH 1 2 10 kΩ C out Low Level Resistance R COL 150 602 2,380 kΩ D out High Level Resistance R DOH 2.5 5.0 10.0 kΩ D out Low Level Resistance R DOL 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN = 0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN = 3.5V 10 20 40 kΩ – VDD = 3.0V Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ; VN = 0V VDD = 1.8V ; D out = 0.5V ; VN = 1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 8 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660F DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.4V Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP MAX UNIT 4.275 4.325 4.375 V VC1-0.35 VC1-0.25 VC1-0.15 2.420 VD1+0.3 2.500 2.580 V V VD1+0.4 VD1+0.5 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 80 100 120 mV 400 480 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V 10.4 ms 2.0 2.0 2.6 3.4 ms ms 10 50 μs −2.0 −1.3 −0.6 V 1 2 10 kΩ 150 602 2,380 kΩ 2.5 5.0 10.0 kΩ 2.5 5.0 10.0 kΩ Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 Short Circuit Detection Delay Time t short VDD = 3.0V Charger Detection Voltage VCHR C out High Level Resistance R COH C out Low Level Resistance R COL D out High Level Resistance R DOH D out Low Level Resistance R DOL Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN = 0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (When VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ; VN = 0V VDD = 4.5V ; C out = 0.5V ; VN = 0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V 8.0 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 9 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660G DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP MAX UNIT 4.300 4.350 4.400 V VC1-0.30 VC1-0.20 VC1-0.10 2.220 VD1+0.6 2.300 2.380 V V VD1+0.7 VD1+0.8 V 0.088 0.125 0.163 s 22.4 32.0 41.6 ms 180 200 220 mV 400 510 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 2.8 4 5.2 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short VDD = 3.0V 10 50 μs Charger Detection Voltage VCHR −2.0 −1.3 −0.6 V C out High Resistance Level R COH 1 2 10 kΩ C out Low Resistance Level R COL 150 602 2,380 kΩ D out High Resistance Level R DOH 2.5 5.0 10.0 kΩ D out Low Resistance Level R DOL 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage(when VD1 < VDD < VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 10 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660H DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V MIN TYP MAX UNIT 4.250 4.300 4.350 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.220 2.300 2.380 V VD1-0.08 VD1 VD1+0.08 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 150 170 mV 500 600 mV VDD −1.3 VDD − 0.9 V 8.0 10.4 ms 2.0 2.0 2.6 3.4 ms ms 10 50 μs -2.0 -1.3 -0.6 V 1 2 10 kΩ 150 602 2,380 kΩ 2.5 5.0 10.0 kΩ 2.5 5.0 10.0 kΩ Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 130 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 5.6 Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V Short Circuit Detection Delay Time t short VDD = 3.0V Charger Detection Voltage VCHR C out High Resistance Level R COH C out Low Resistance Level R COL D out High Resistance Level R DOH D out Low Resistance Level R DOL Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V 1.4 1.1 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 11 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660I DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V MIN TYP MAX UNIT 4.250 4.300 4.350 V VC1-0.30 VC1-0.20 VC1-0.10 V 2.220 2.300 2.380 V VD1-0.08 VD1 VD1+0.08 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 130 150 mV 490 600 mV VDD −1.3 VDD − 0.9 V 8.0 10.4 ms 2.0 2.0 2.6 3.4 ms ms 10 50 μs −2.0 −1.3 −0.6 V 1 2 10 kΩ 150 602 2,380 kΩ 2.5 5.0 10.0 kΩ 2.5 5.0 10.0 kΩ Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 110 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response 400 with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out VDD −1.7 Response with t short Delay Time) VDD = 3.0V 5.6 Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V Short Circuit Detection Delay Time t short VDD = 3.0V Charger Detection Voltage VCHR C out High Resistance Level R COH C out Low Resistance Level R COL D out High Resistance Level R DOH D out Low Resistance Level R DOL Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V 1.4 1.1 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 12 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660J DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) VDD = 3.0V MIN TYP MAX UNIT 4.230 4.280 4.330 VC1-0.30 VC1-0.20 VC1-0.10 V V 2.201 2.281 2.361 V VD1-0.08 VD1 VD1+0.08 V 0.700 1.000 1.300 s 87.5 125.0 162.5 ms 180 200 220 mV 400 510 600 mV VDD −1.7 VDD −1.3 VDD − 0.9 V 5.6 8.0 10.4 ms 1.4 1.1 2.0 2.0 2.6 3.4 ms ms 10 50 μs -2.0 -1.3 -0.6 V 1 2 10 kΩ 150 602 2,380 kΩ 2.5 5.0 10.0 kΩ 2.5 5.0 10.0 kΩ Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V Short Circuit Detection Delay Time t short VDD = 3.0V Charger Detection Voltage VCHR C out High Level Resistance R COH C out Low Level Resistance R COL D out High Level Resistance R DOH D out Low Level Resistance R DOL Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD< VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 13 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series AAT8660K DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL TEST CONDITION Over Charge Threshold Voltage VC1 Over Charge Release Voltage VC 2 Over Discharge Threshold Voltage VD1 Over Discharge Release Voltage VD 2 Over Charge Delay Time t C1 Detect Rising Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Falling Edge of Supply Voltage Detect Rising Edge of Supply Voltage VDD = 3.6V to 4.5V Over Discharge Delay Time t D1 VDD = 3.6V to 2.2V Over Current Level 1 Detection Voltage VOC1 Over Current Level 2 Detection Voltage VOC 2 Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC1 Delay Time) Detect Rising Edge of “VN” Pin Voltage ( D out Response with tOC2 Delay Time) VDD = 3.0V , Detect Rising Edge of “VN” Pin Voltage ( D out Response with t short Delay Time) MIN TYP 4.20 4.25 VC1-0.3 2.201 VD1+0.5 0.700 MAX UNIT 4.30 VC1-0.2 VC1-0.1 2.281 2.361 VD1+0. VD1+0.7 6 1.000 1.300 V V V V s 87.5 125 162.5 ms 80 100 120 mV 400 480 600 mV VDD −1.7 VDD − 1. VDD − 0.9 V Short Circuit Detection Voltage Vshort Over Current Level 1 Detection Delay Time t OC1 VDD = 3.0V 5.6 8.0 10.4 ms Over Current Level 2 Detection Delay Time t OC 2 Room Temp. ⇒ Low or High Temp. ⇒ VDD = 3.0V 1.4 1.1 2.0 2.0 2.6 3.4 ms ms Short Circuit Detection Delay Time t short VDD = 3.0V 10 50 μs Charger Detection Voltage VCHR -2.0 -1.3 -0.6 V C out High Level Resistance R COH 1 2 10 kΩ C out Low Level Resistance R COL 150 602 2380 kΩ D out High Level Resistance R DOH 2.5 5.0 10.0 kΩ D out Low Level Resistance R DOL 2.5 5.0 10.0 kΩ Internal Resistance between VN and VDD R VND VDD = 1.8V ; VN=0V 100 300 900 kΩ Internal Resistance between VN and GND R VNG VDD = 3.5V ; VN=3.5V 10 20 40 kΩ – Detect Rising Edge of “ D out ” Pin Voltage (when VD1<VDD<VD2) VDD = 3.5V ; C out = 3.0V ;VN=0V VDD = 4.5V ; C out = 0.5V ;VN=0V VDD = 3.5V ; D out = 3.0V ;VN=0V VDD = 1.8V ; D out = 0.5V ;VN=1.8V – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 14 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME ( 25ο C ) PARAMETER SYMBOL DEVICE MIN VC1 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K 4.275 4.30 4.25 4.23 4.23 4.275 4.3 4.25 4.25 4.23 4.20 VC1-0.35 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.35 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 VC1-0.3 Over Charge Threshold Voltage VC2 Over Charge Release Voltage VD1 Over Discharge Threshold Voltage – 2.420 2.220 2.220 2.201 2.201 2.420 2.220 2.220 2.220 2.201 2.201 TYP MAX UNIT 4.325 4.375 4.35 4.40 4.3 4.35 4.28 4.33 4.28 4.33 4.325 4.375 4.35 4.4 4.3 4.35 4.3 4.35 4.28 4.33 4.25 4.30 VC1-0.25 VC1-0.15 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.25 VC1-0.15 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 VC1-0.2 VC1-0.1 2.5 2.3 2.3 2.281 2.281 2.5 2.3 2.3 2.3 2.281 2.281 2.580 2.380 2.380 2.361 2.361 2.580 2.380 2.380 2.380 2.361 2.361 – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 15 of 25 V2.0 V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V V Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER SYMBOL VD2 Over Discharge Release Voltage tC1 Over Charge Delay Time tD1 Over Discharge Delay Time – DEVICE MIN TYP MAX UNIT AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K VD1+0.3 VD1+0.6 VD1-0.08 VD1-0.08 VD1+0.5 VD1+0.4 VD1+0.7 VD1 VD1 VD1+0.6 VD1+0.5 VD1+0.8 VD1+0.08 VD1+0.08 VD1+0.7 VD1+0.3 VD1+0.6 VD1-0.08 VD1-0.08 VD1-0.08 VD1+0.5 0.700 0.088 0.700 0.700 0.700 0.700 0.088 0.700 0.700 0.700 0.700 87.5 22.4 87.5 87.5 87.5 87.5 22.4 87.5 87.5 87.5 87.5 VD1+0.4 VD1+0.7 VD1 VD1 VD1 VD1+0.6 1 0.125 1 1 1 1 0.125 1 1 1 1 125 32 125 125 125 125 32 125 125 125 125 VD1+0.5 VD1+0.8 VD1+0.08 VD1+0.08 VD1+0.08 VD1+0.7 1.300 0.163 1.300 1.300 1.300 1.300 0.163 1.300 1.300 1.300 1.300 162.5 41.6 162.5 162.5 162.5 162.5 41.6 162.5 162.5 162.5 162.5 V V V V V V V V V V V s s s s s s s s s s s ms ms ms ms ms ms ms ms ms ms ms – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 16 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series SUMMARY OF AAT8660 DETECTION VOLTAGE AND DELAY TIME (25℃) PARAMETER Over Current Level 1 Detection Voltage Over Current Level 2 Detection Voltage Over Current Level 1 Detection Delay Time – DEVICE SYMBOL VOC1 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K VOC2 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K tOC1 AAT8660A AAT8660B AAT8660C AAT8660D AAT8660E AAT8660F AAT8660G AAT8660H AAT8660I AAT8660J AAT8660K MIN TYP MAX UNIT 130 130 80 110 80 80 180 130 110 180 80 400 400 400 400 400 400 400 400 400 400 400 5.6 2.8 5.6 5.6 5.6 5.6 2.8 5.6 5.6 5.6 5.6 150 150 100 130 100 100 200 150 130 200 100 500 500 480 490 480 480 510 500 490 510 480 8 4 8 8 8 8 4 8 8 8 8 170 170 120 150 120 120 220 170 150 220 120 600 600 600 600 600 600 600 600 600 600 600 10.4 5.2 10.4 10.4 10.4 10.4 5.2 10.4 10.4 10.4 10.4 mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV mV ms ms ms ms ms ms ms ms ms ms ms – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 17 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TIMING CHART AAT8660 (CHARGE AND DISCHARGE) VC1 VC2 V DD VD2 VD1 t V DD D t D 1 D 1 out GND t V DD t C 1 C 1 C out VN V DD GND VCHR – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 18 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TIMING CHART AAT8660 (UNUSUAL CHARGE CURRENT, OVER CURRENT, SHORT CIRCUIT) V DD V C 1 V C 2 VD 2 V D1 t OC V D 1 t OC 2 t short t OC 1 DD out V V C t OC 2 DD t C1 DD out V DD V short V OC 2 V OC 1 V CHR Time – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 19 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TYPICAL APPLICATION + R1 100Ω C1 0.1μF VDD Li Battery VN GND D OUT C OUT R2 1kΩ − – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 20 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PACKAGE DIMENSION – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 21 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PACKAGE DIMENSIONS (CONT.) VARIATION (ALL DIMENSIONS SHOWN IN MILLIMETERS) SYMBOL MIN TYP MAX A ------ ------ 1.45 A1 ------ ------ 0.15 A2 0.90 1.15 1.30 b 0.30 ------ 0.50 c 0.08 ------ 0.22 D 2.90 BSC E 2.80 BSC E1 1.60 BSC e 0.95 BSC e1 1.90 BSC L 0.30 0.45 L1 0.60 REF L2 0.25 BSC 0.60 R 0.10 ------ ------ R1 0.10 ------ 0.25 ο θ 0 θ1 5ο ο 4 10 ο 8ο 15 ο NOTE: 1 JEDEC OUTLINE: MO-178 AB – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 22 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TAPE AND REEL PACKING METHOD: 3,000PCS/REEL, 5 REELS/BOX – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 23 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series TAPE AND REEL (CONT.) X.XXX X ± 0.0025 X.XXX ± 0.006 X.XX ± 0.025 X.X ± 0.10 X ± 0.25 UNIT: MILLIMETERS – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 24 of 25 V2.0 Advanced Analog Technology, Inc. AAT8660 Series PART MARKING PREVIOUS SOT26 TOP MARKING AXXX NOTE: SOT26 HAS NO BACK MARKING. CURRENT SOT26 TOP MARKING AXX ORDERING INFORMATION – – 台灣類比科技股份有限公司 – Advanced Analog Technology, Inc. – Page 25 of 25 V2.0