BFR182T NPN Silicon RF Transistor Preliminary data 3 For low noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA fT = 8 GHz F = 1.2 dB at 900 MHz 2 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type BFR182T Marking RGs 1=B Pin Configuration 2=E 3=C Package SC75 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 12 Collector-emitter voltage VCES 20 Collector-base voltage VCBO 20 Emitter-base voltage VEBO 2 Collector current IC 35 Base current IB 4 Total power dissipation Ptot 250 mW Junction temperature Tj 150 °C Ambient temperature TA -65 ... 150 Storage temperature Tstg -65 ... 150 RthJS 300 Value Unit V mA TS 75°C 1) Thermal Resistance Junction - soldering point 2) K/W 1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance thJA 1 Aug-09-2001 BFR182T Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. 12 - - V ICES - - 100 µA ICBO - - 100 nA IEBO - - 1 µA hFE 50 100 200 DC characteristics Collector-emitter breakdown voltage V(BR)CEO IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain - IC = 10 mA, VCE = 8 V 2 Aug-09-2001 BFR182T Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbol Values Parameter Unit min. typ. max. fT 6 8 - Ccb - 0.33 0.5 Cce - 0.18 - Ceb - 0.6 - AC characteristics (verified by random sampling) Transition frequency GHz IC = 15 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance pF VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Noise figure dB F IC = 3 mA, VCE = 8 V, ZS = ZSopt , f = 900 MHz - 1.2 - f = 1.8 GHz - 1.9 - Gms - 20 - Gma - 13 - - 16 - - 10 - Power gain, maximum stable 1) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 900 MHz Power gain, maximum available 2) IC = 10 mA, VCE = 8 V, ZS = ZSopt, ZL = ZLopt , f = 1.8 GHz |S21e|2 Transducer gain IC = 10 mA, VCE = 8 V, ZS = ZL = 50 , f = 900 MHz f = 1.8 GHz 1G ms 2G ma = |S21 / S12 | = |S21 / S12 | (k-(k2-1)1/2) 3 Aug-09-2001 BFR182T SPICE Parameters (Gummel-Poon Model, Berkley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 4.8499 fA BF = 84.113 - NF = 0.56639 - VAF = 21.742 V IKF = 0.14414 A ISE = 8.4254 fA NE = 0.91624 - BR = 10.004 - NR = 0.54818 - VAR = 2.2595 V IKR = 0.039478 A ISC = 5.9438 fA NC = 0.5641 - RB = 3.4217 IRB = 0.071955 mA RBM = 2.8263 RE = 2.1858 RC = 1.8159 CJE = 8.8619 fF VJE = 1.0378 V MJE = 0.40796 - TF = 22.72 ps XTF = 0.43147 - VTF = 0.34608 V ITF = 6.5523 mA PTF = 0 deg CJC = 490.25 fF VJC = 1.0132 V MJC = 0.31068 - XCJC = 0.19281 - TR = 1.7541 ns CJS = 0 fF VJS = 0.75 V MJS = 0 - XTB = 0 - EG = 1.11 eV XTI = 3 - FC = 0.64175 - TNOM 300 K L1 = 0.762 nH L2 = 0.706 nH L3 = 0.382 nH C1 62 fF C2 84 fF C3 180 fF C4 = 7 C5 = 40 fF C6 = 48 fF All parameters are ready to use, no scalling is necessary. Extracted on behalf of Infineon Technologies AG by: Institut für Mobil-und Satellitentechnik (IMST) Package Equivalent Circuit: C4 C1 L2 B Transistor Chip B’ C’ L3 C E’ C6 C2 L1 C5 C3 E EHA07524 Valid up to 6GHz For examples and ready to use parameters please contact your local Infineon Technologies distributor or sales office to obtain a Infineon Technologies CD-ROM or see Internet: http://www.infineon.com/silicondiscretes 4 Aug-09-2001 BFR182T Total power dissipation Ptot = f (TS ) 300 P tot mW 200 150 100 50 0 0 20 40 60 80 100 120 °C 150 TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax/P totDC = f (tp) 10 2 RthJS Ptotmax / PtotDC 10 3 10 2 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 D=0.5 0.2 0.1 0.05 0.02 0.01 0.005 0 10 1 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 10 0 -7 10 0 tp 10 -6 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Aug-09-2001 BFR182T Collector-base capacitance Ccb = f (VCB ) Transition frequency f T = f (I C) f = 1MHz V CE = Parameter 9 0.6 10V GHz pF 8V 5V 6 0.4 3V fT Ccb 7 5 0.3 2V 4 0.2 3 1V 2 0.7V 0.1 1 0 0 5 10 V 15 0 0 25 5 10 15 mA 20 VCB 30 IC Power Gain Gma , Gms = f(IC ) Power Gain Gma, Gms = f(I C) f = 0.9GHz f = 1.8GHz VCE = Parameter VCE = Parameter 22 15 10V 5V dB dB 10V 5V 3V G ma G 3V 16 2V 13 2V 9 6 1V 1V 10 7 0 3 4 8 12 16 20 24 mA 0 0 32 IC 4 8 12 16 20 24 mA 32 IC 6 Aug-09-2001 BFR182T Power Gain Gma , Gms = f(VCE):_____ Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) |S21|2 = f(VCE):--------- VCE = Parameter, f = 900MHz f = Parameter 22 dB 30 0.9GHz IC=10mA 8V dBm 18 0.9GHz 5V 1.8GHz 14 IP 3 G 16 20 3V 1.8GHz 12 2V 15 10 8 1V 10 6 4 5 2 0 0 3 V 6 0 0 12 5 10 15 mA 20 VCE IC Power Gain |S21|2= f(f) Power Gain Gma , Gms = f(f) V CE = Parameter VCE = Parameter 45 30 IC=10mA dB 30 IC =10mA dBm 35 20 G S21 30 25 15 20 10 15 5 10 10V 5V 1V 5 0 0 1 2 3 4 5 GHz 10V 5V 0 1V -5 0 7 f 1 2 3 4 5 GHz 7 f 7 Aug-09-2001