Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 1/9 CYStech Electronics Corp. P-Channel Enhancement Mode Power MOSFET MTB010P04Q8 Features • Simple drive requirement • Low on-resistance • Fast switching speed • Pb-free lead plating package Equivalent Circuit BVDSS -40V ID@ TA=25°C, VGS=-10V -12.5A ID@ TA=70°C, VGS=-10V RDSON@VGS=-10V, ID=-15A -10.0A 8.5mΩ(typ.) RDSON@VGS=-4.5V, ID=-10A 12.5mΩ(typ.) Outline MTB010P04Q8 D D SOP-8 D D G G：Gate S：Source D：Drain Pin 1 S S S Ordering Information Device Package Shipping MTB010P04Q8-0-T3-G SOP-8 (Pb-free lead plating & halogen-free package) 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel,13” reel Product rank, zero for no rank products Product name MTB010P04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 2/9 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=-10V Continuous Drain Current @ TA=70°C, VGS=-10V Pulsed Drain Current Avalanche Current @ L=0.1mH Avalanche Energy @ L=1mH, ID=-24A, VDD=-15V Repetitive Avalanche Energy @ L=0.05mH TA=25℃ Total Power Dissipation TA=70℃ Operating Junction and Storage Temperature Range Symbol Limits VDS VGS -40 ±20 -12.5 -10.0 -70 *1 -50 288 *2 2.5 3.1 *3 2.0 *3 -55~+150 ID IDM IAS EAS EAR PD Tj, Tstg Unit V A mJ W °C Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 20 40 *3 Unit °C/W Note : 1. Pulse width limited by maximum junction temperature. 2. 100% tested by conditions of VDS=-15V, L=0.1mH, IAS=-10A, VGS=-10V. 3. Surface mounted on 1 in² copper pad of FR-4 board, t≤10s ; 125°C/W when mounted on minimum copper pad. Electrical Characteristics (Tj=25°C, unless otherwise specified) Symbol Static BVDSS VGS(th) IGSS IDSS RDS(ON) *1 GFS Dynamic Ciss Coss Crss *1 MTB010P04Q8 Min. Typ. Max. -40 -1 - 8.5 12.5 24.1 -2.5 ±100 -1 -10 12 20 - - 3384 276 203 - Unit Test Conditions S VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VGS=±20V, VDS=0V VDS=-32V, VGS=0V VDS=-32V, VGS=0V, Tj=125°C VGS=-10V, ID=-15A VGS=-4.5V, ID=-10A VDS=-10V, ID=-10A pF VDS=-20V, VGS=0V, f=1MHz V nA μA mΩ CYStek Product Specification CYStech Electronics Corp. Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 3/9 Electrical Characteristics(Cont.) (Tj=25°C, unless otherwise specified) Symbol td(ON) *1, 2 tr *1, 2 td(OFF) *1, 2 tf *1, 2 Qg *1, 2 Qgs *1, 2 Qgd *1, 2 Rg Source-Drain Diode IS *1 ISM *3 VSD *1 trr Qrr Min. - Typ. 17.4 20.6 96.4 16.4 67.6 10.5 14.3 5.3 Max. - - -0.82 16.4 11.0 -2.6 -10 -1.2 - Unit Test Conditions ns VDD=-20V, ID=-15A, VGS=-10V, RG=1Ω nC VDS=-20V, ID=-15A, VGS=-10V Ω f=1MHz A V ns nC IS=-10A, VGS=0V IF=-10A, dIF/dt=100A/μs Note : *1.Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% *2.Independent of operating temperature *3.Pulse width limited by maximum junction temperature. Recommended Soldering Footprint MTB010P04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 4/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 1.2 70 -BVDSS, Normalized Drain-Source Breakdown Voltage -10V,-9V,-8V, -7V, -6V,-5V -I D, Drain Current (A) 60 -4 V 50 40 -3.5V 30 20 VGS=-3V 10 1.1 1 0.9 ID=-250μA, VGS=0V 0.8 0 0 1 2 3 4 -VDS, Drain-Source Voltage(V) -75 -50 -25 5 Source Drain Current vs Source-Drain Voltage Static Drain-Source On-State resistance vs Drain Current 1.2 VGS=0V -VSD, Source-Drain Voltage(V) R DS(on) , Static Drain-Source On-State Resistance(mΩ) 100 VGS=-4.5V 10 VGS=-10V 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 0.2 1 0.01 0.1 1 10 -ID, Drain Current(A) 0 100 R DS(on) , Normalized Static Drain-Source On-State Resistance 50 45 40 ID=-15A 35 30 25 20 15 10 5 0 0 MTB010P04Q8 2 4 6 8 -VGS, Gate-Source Voltage(V) 2 4 6 8 10 12 14 16 -IS, Source Drain Current(A) 18 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(on) , Static Drain-Source OnState Resistance(mΩ) 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) 10 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 VGS=-10V, ID=-15A RDSON@Tj=25°C : 8.5mΩ typ. -75 -50 -25 0 25 50 75 100 125 150 175 Tj, Junction Temperature(°C) CYStek Product Specification Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 5/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage -VGS(th) , Normalized Threshold Voltage 10000 Capacitance---(pF) Ciss 1000 C oss Crss 1.4 1.2 ID=-1mA 1 0.8 ID=-250μA 0.6 0.4 100 0 5 10 15 20 25 -VDS, Drain-Source Voltage(V) -75 -50 -25 30 Forward Transfer Admittance vs Drain Current 50 75 100 125 150 175 Gate Charge Characteristics VDS=-10V -VGS, Gate-Source Voltage(V) GFS, Forward Transfer Admittance(S) 25 10 100 10 1 VDS=-15V 0.1 Pulsed TA=25°C 8 VDS=-20V 6 4 VDS=-32V 2 ID=-15A 0 0.01 0.001 0.01 0.1 1 -ID, Drain Current(A) 10 0 10 20 30 40 50 60 Qg, Total Gate Charge(nC) 70 80 Maximum Drain Current vs Junction Temperature Maximum Safe Operating Area 16 RDS(ON) Limited 100μs 10 1ms 10ms 1 100ms 1s 0.1 TA=25°C, Tj=150°C, VGS=-10V RθJA=40°C/W, Single Pulse DC -I D, Maximum Drain Current(A) 100 -I D, Drain Current(A) 0 Tj, Junction Temperature(°C) 14 12 10 8 6 4 TA=25°C, VGS=-10V, RθJA=40°C/W single pulse 2 0 0.01 0.01 MTB010P04Q8 0.1 1 10 -ID, Drain-Source Voltage(V) 100 25 50 75 100 125 150 Tj, Junction Temperature(°C) 175 CYStek Product Specification Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 6/9 CYStech Electronics Corp. Typical Characteristics(Cont.) Typical Transfer Characteristics 70 350 VDS=-10V 60 300 50 TJ(MAX) =150°C TA=25°C RθJA=40°C/W 250 Power (W) -I D, Drain Current(A) Single Pulse Power Rating, Junction to Ambient (Note on page 2) 40 30 200 150 20 100 10 50 0 0 1 2 3 4 -VGS, Gate-Source Voltage(V) 0 0.0001 5 0.001 0.01 0.1 Pulse Width(s) 1 10 100 Transient Thermal Response Curves 1 r(t), Normalized Effective Transient Thermal Resistance D=0.5 0.2 0.1 0.1 1.RθJA(t)=r(t)*RθJA 2.Duty Factor, D=t1/t2 3.TJM-TA=PDM*RθJA(t) 4.RθJA=40°C/W 0.05 0.02 0.01 0.01 Single Pulse 0.001 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 t1, Square Wave Pulse Duration(s) MTB010P04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 7/9 Reel Dimension Carrier Tape Dimension MTB010P04Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 8/9 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB010P04Q8 CYStek Product Specification Spec. No. : C030Q8 Issued Date : 2017.10.17 Revised Date : 2017.10.18 Page No. : 9/9 CYStech Electronics Corp. Dimension Marking: Device Name Date Code B010 P04 Date Code(counting from left to right) : 1st code: year code, the last digit of Christian year 2nd code : month code, Jan→A, Feb→B, Mar→C, Apr→D May→E, Jun→F, Jul→G, Aug→H, Sep→J, Oct→K, Nov→L, Dec→M 3rd and 4th codes : prodcution serial number, 01~99 8-Lead SOP-8 Plastic Package CYStek Package Code: Q8 Millimeters Min. Max. 1.350 1.750 0.100 0.250 1.350 1.550 0.330 0.510 0.170 0.250 4.700 5.100 DIM A A1 A2 b c D Inches Min. Max. 0.053 0.069 0.004 0.010 0.053 0.061 0.013 0.020 0.006 0.010 0.185 0.200 DIM E E1 e L θ Millimeters Min. Max. 3.800 4.200 5.800 6.200 1.270 (BSC) 0.300 1.270 8° 0 Inches Min. Max. 0.150 0.165 0.228 0.244 0.050 (BSC) 0.012 0.050 8° 0 Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB010P04Q8 CYStek Product Specification