APT6011B2VFR
APT6011LVFR
600V 49A
POWER MOS V® FREDFET
0.110Ω
B2VFR
T-MAX™
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
TO-264
LVFR
• T-MAX™ or TO-264 Package
• Avalanche Energy Rated
• Faster Switching
• FAST RECOVERY BODY DIODE
D
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT6011B2VFR_LVFR
UNIT
600
Volts
Drain-Source Voltage
49
Continuous Drain Current @ TC = 25°C
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
625
Watts
Linear Derating Factor
5.00
W/°C
PD
TJ,TSTG
1
196
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
49
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3000
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
600
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 24.5A)
TYP
MAX
UNIT
Volts
0.110
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 480V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 2.5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
5-2004
Characteristic / Test Conditions
050-8061 Rev A
Symbol
APT6011B2VFR_LVFR
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
MIN
Test Conditions
TYP
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
1100
Reverse Transfer Capacitance
f = 1 MHz
500
Crss
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller") Charge
td(on)
Turn-on Delay Time
tr
Rise Time
td(off)
Turn-off Delay Time
tf
Fall Time
MAX
UNIT
8900
VGS = 10V
450
VDD = 300V
50
ID = 49A @ 25°C
200
VGS = 15V
17
VDD = 300V
16
ID = 49A @ 25°C
65
RG = 0.6Ω
6
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
49
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
196
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -49A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
5
t rr
Reverse Recovery Time
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
2.0
Tj = 125°C
7.0
IRRM
Peak Recovery Current
(IS = -49A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
27
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.20
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.7
Note:
0.5
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-8061 Rev A
5-2004
0.25
0.15
0.3
t2
0.1
0
SINGLE PULSE
0.05
10-5
t1
Duty Factor D = t1/t2
0.05
10-4
°C/W
4 Starting Tj = +25°C, L = 2.50mH, RG = 25Ω, Peak IL = 49A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID49A di/dt ≤ 700A/µs VR ≤600V TJ ≤ 150°C
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.20
UNIT
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT6011B2VFR_LVFR
120
Junction
temp. (°C)
RC MODEL
0.0302
Power
(watts)
0.0729
0.0955
0.00809F
0.0182F
0.264F
ID, DRAIN CURRENT (AMPERES)
VGS =15 &10 V
Case temperature. (°C)
5V
40
4.5V
20
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
120
1.40
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
60
TJ = -55°C
40
TJ = +25°C
20
0
1
2
3
4
5
6
7
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
0
V
NORMALIZED TO
= 10V @ 24.5A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
50
40
30
20
10
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
2.5
1.2
D
GS
= 10V
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
V
= 24.5A
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
I
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-8061 Rev A
0
TJ = +125°C
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
5.5V
60
0
80
ID, DRAIN CURRENT (AMPERES)
80
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
100
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
100
6.5V
6V
50
100µS
10
5
1mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
D
Coss
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
= 49A
12
VDS=120V
8
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
I
Ciss
10mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
100
VDS=300V
VDS=480V
4
0
APT6011B2VFR_LVFR
30,000
196
0
100 200 300 400 500 600 700
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
T-MAXTM (B2) Package Outline (B2VFR)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
TO-264 (L) Package Outline (LVFR)
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
Drain
Drain
20.80 (.819)
21.46 (.845)
050-8061 Rev A
5-2004
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
25.48 (1.003)
26.49 (1.043)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
19.81 (.780)
21.39 (.842)
Gate
Drain
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
Gate
Drain
Source
Source
2.21 (.087)
2.59 (.102)
2.29 (.090)
2.69 (.106)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.