ASB AST54S High gain, low noise amplifier Datasheet

AST54S
High Gain, Low Noise Amplifier
Description
Features
19.0 dB Gain at 900 MHz
AST54S is a one-stage LNA which has a low noise,
high gain, and high linearity over a wide range of
frequency up to 4 GHz. It is also suitable for use in
the low noise amplifier block of antenna module of
FM, SDARS and mobile wireless systems of LTE,
CDMA, WCDMA, WLAN so on. The amplifier is
available in a SOT343 package and passes the
stringent DC, RF, and reliability tests.
0.4 dB NF at 900 MHz
30 dBm OIP3 at 900 MHz
18 dBm P1dB at 900 MHz
“AEC-Q100
Qualified”
Typical Performance
Package Style: SOT343
Application Circuit
 LTE (700)
 CDMA, GSM
(Supply Voltage = +5 V, TA = +25 C, Zo = 50 )
 2000 MHz (Low Noise)
Parameters
Units
Typical
Testing Frequency
MHz
900
2000
2400
3300
 2000 MHz (High Gain)
Gain
dB
19.0
12.8
12.5
10.0
 2338 MHz (SiriusXM)
S11
dB
-18
-18
-20
-18
S22
dB
-10
-10
-10
-16
Output IP31)
dBm
30.0
34.0
34.0
37.5
 2400 MHz
Noise Figure
dB
0.40
0.50
0.65
0.80
 WiMAX
Output P1dB
dBm
18
19
19
18
Current
mA
40
Device Voltage
V
+3.3
 2338 MHz (SiriusXM, High IP1dB)
 LTE 2600
 3300 MHz
 50 ~ 1000 MHz (50 ), FM
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
 470 ~ 860 MHz (50 )
Product Specifications1)
Parameters
Units
Min
Typ
Frequency
MHz
Gain
dB
12.3
13.0
S11
dB
-16
-18
S22
dB
-10
-12
Output IP3
dBm
32
34
Noise Figure
dB
Output P1dB
dBm
17
19
Current
mA
35
40
Device Voltage
V
Max
 TETRA 360 ~ 450 MHz
 IF 20 ~ 108 MHz
2000
13.5
 Wide Band 5 ~ 1000 MHz
 FM 88 ~ 108 MHz
GPS, GLONASS, Galileo, Compass
0.50
0.65
45
· 1559 ~ 1610 MHz (GPS)
· 1500 ~ 1610 MHz (GPS)
· 1164 ~ 1620 MHz (GPS Wide)
+3.3
1) 100% in-house DC & RF testing is done on packaged products before taping
· 1164 ~ 1620 MHz (High current)
· 1100 ~ 1700 MHz (GPS Wide)
Absolute Maximum Ratings
· 50 ~ 2500 MHz
Parameters
Rating
Operating Case Temperature
-40 to 85 C
Storage Temperature
-40 to 150 C
Device Voltage
+6 V
Operating Junction Temperature
Input RF Power
(CW, 50  matched as in 2000 MHz application circuit)*
Thermal Resistance
+150 C
Pin No.
Function
1
RF OUT & Bias
2, 4
GND
3
RF IN
+22 dBm
165 C/W
* Please find the max. input power data from http://www.asb.co.kr/pdf/Maximum_Input_Power_Analysis.pdf
The max. input power, in principle, depends upon the application frequency and the matching circuit.
1/26
(Trans-impedance Amplifier, 50 )
Pin Configuration
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
Outline Drawing
Symbols
T54S
A
A1
A2
b
b1
C
D
E
E1
e
e1
e2
L
L1
L2
Dimensions (In mm)
MIN
MAX
0.90
1.10
0.025
0.10
0.875
1.00
0.20
0.40
0.50
0.70
0.10
0.15
1.90
2.10
1.15
1.35
2.00
2.30
0.65BSC
1.30BSC
0.15BSC
0.425REF
0.300REF
0.200REF
Pin NO.
Function
Pin NO.
Function.
1
RF OUT & Bias
3
RF IN
2
GND
4
GND
Mounting Recommendation (In mm)
1
2
4
3
ESD Classification & Moisture Sensitivity Level
ESD Classification (Test Method : AEC-Q100)
HBM
Class H0 (Voltage Level: 200 V)
MM
Class M0 (Voltage Level: 50 V)
CDM
Class C4 (Voltage Level: 800 V)
CAUTION: ESD-sensitive device!
Moisture Sensitivity Level
Level 3 at 260 C reflow
2/26
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
698 ~ 787 MHz
+5 V
Frequency
698
787
698
787
dB
19.0
18.0
19.5
18.5
dB
0.4
0.4
0.4
0.4
RLin
dB
-18
-18
-18
-18
RLout
dB
-10
-10
-10
-10
Po(1dB)
dBm
17
17
19
19
OIP3
dBm
30
31
33
33
Id
mA
40
40
60
60
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
APPLICATION CIRCUIT
LTE 700
Frequency
Parameter
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
VDD
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
C5=1 uF
R3=43 @ 40mA
=27  @ 60mA
R1=820 
C4=1 nF
R2=5.1 k
L2=100 nH
RF IN
L1=10 nH
C1=100 pF
L3=22 nH
*P1
C2=100 pF
AST54S
RF OUT
*P1
R4=430 
C6=0.75 pF
Bottom
C3=1 nF
*P1 Length : 3.0 mm width : 0.3mm
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 3 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
25
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
0
200
-25
400
600
800
1000
-30
200
1200
400
Frequency (MHz)
600
800
1000
1200
Frequency (MHz)
10
0
9
8
-5
Stability Factor
7
S22 (dB)
-10
-15
6
5
4
3
2
-20
1
-25
200
0
400
600
800
1000
1200
0
500
3/26
1000
1500
2000
2500
3000
Frequency [MHz]
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GSM, CDMA
824 ~ 960 MHz
+5 V
Parameter
Symbol
Unit
Power Gain
Gp
Noise Figure
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
Frequency
Frequency
824
960
824
960
dB
19.5
18.1
19.6
18.2
NF
dB
0.4
0.4
0.4
0.4
RLin
dB
-18
-18
-18
-18
RLout
dB
-10
-10
-10
-10
Po(1dB)
dBm
17
18
19
19
OIP3
dBm
30
30
32
32
Id
mA
40
40
60
60
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
C5=1 uF
R3=43  @ 40mA
=27  @ 60mA
R1=820 
C4=1 nF
R2=5.1 k
L2=39 nH
L1=6.8 nH
RF IN C1=100 pF
L3=22 nH
*P1
C2=100 pF
AST54S
RF OUT
*P1
R4=430
C6=0.5 pF
Bottom
C3=1 nF
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
25
0
20
-5
-10
15
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-15
-20
5
-25
0
500
600
700
800
900
1000
1100
-30
500
1200
600
Frequency (MHz)
700
800
900
1000
1100
1200
Frequency (MHz)
0
10
9
-5
8
Stability Factor
7
S22 (dB)
-10
-15
-20
6
5
4
3
2
1
-25
500
600
700
800
900
1000
1100
1200
0
0
500
Frequency (MHz)
4/26
1000
1500
2000
2500
3000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GPS,GLONASS,Galileo,Compass
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 1575 MHz
14.5
dB
Noise Figure
NF
F = 1575 MHz
0.5
dB
Input Return Loss
RLin
F = 1575 MHz
-18
dB
Output Return Loss
RLout
F = 1575 MHz
-10
dB
Po(1dB)
F = 1575 MHz
17.5
dBm
OIP3
F = 1575 MHz
28
dBm
Id
F = 1575 MHz
Non-RF
18
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
1559 ~ 1610 MHz
+3 V, 18 mA
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
C5=1 uF
R3=10 
C4=1 nF
R2=5.1 k
L1=3.9 nH
C1=100 pF
RF IN
*P1
C2=100 pF
AST54S
C3=0.75 pF
L2=8.2 nH
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
5
20
0
15
-10
Gain (dB)
S11 (dB)
-5
-15
10
-20
5
-25
-30
0
500
1000
1500
2000
2500
0
3000
0
500
Frequency (MHz)
5
5
0
4
Stability Factor
S22 (dB)
1500
2000
2500
3000
2500
3000
Frequency (MHz)
-5
-10
-15
3
2
1
-20
0
0
500
1000
1500
2000
2500
3000
0
500
Frequency (MHz)
5/26
1000
1000
1500
2000
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GPS,GLONASS,Galileo,Compass
1500 ~ 1610 MHz
+5 V, 40 mA
Parameter
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
Frequency (MHz)
1500
1610
dB
15.2
14.9
dB
0.45
0.50
RLin
dB
-18
-18
RLout
dB
-18
-18
Po(1dB)
dBm
18
18
OIP3
dBm
33
33
Id
mA
40
40
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
C5=1 uF
R3=43 
C4=1 nF
R2=5.1 k
L1=5.6 nH
C1=100 pF
RF IN
*P1
AST54S
C3=0.5 pF
L2=8.2 nH
C2=100 pF
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length:3 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
30
0
25
-5
20
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
15
-15
10
-20
5
-25
0
1300
1400
1500
1600
1700
-30
1300
1800
1400
Frequency (MHz)
1500
1600
1700
1800
Frequency (MHz)
0
10
9
-5
8
-10
7
Stability Factor
S22 (dB)
-15
-20
-25
6
5
4
3
-30
2
-35
-40
1300
1
0
1400
1500
1600
1700
1800
0
500
Frequency (MHz)
6/26
1000
1500
2000
2500
3000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GPS,GLONASS,Galileo,Compass
1164 ~ 1620 MHz
+3 V, 18 mA
Parameter
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
Frequency (MHz)
1164 ~ 1300
1559 ~ 1620
dB
16.5
14.5
dB
0.5
0.5
RLin
dB
-11
-12
RLout
dB
-12
-15
Po(1dB)
dBm
16.0
16.5
OIP3
dBm
26
27
Id
mA
18
18
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=820 
R3=10 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=6.8 nH
C1=100 pF
RF IN
L2=8.2 nH
*P1
C2=100 pF
AST54S
C3=0.75 pF
*P1
RF OUT
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
5
20
0
-5
S11 (dB)
Gain (dB)
15
10
-10
-15
-20
5
-25
-30
0
0
500
1000
1500
2000
2500
0
3000
500
5
0
4
Stability Factor
5
S22 (dB)
-5
-10
-15
1500
2000
2500
3000
2500
3000
3
2
1
-20
0
0
500
1000
1500
2000
2500
3000
0
Frequency (MHz)
7/26
1000
Frequency (MHz)
Frequency (MHz)
500
1000
1500
2000
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GPS,GLONASS,Galileo,Compass
1164 ~ 1620 MHz
+5 V, 40 mA
Frequency (MHz)
Parameter
Symbol
Unit
1164 ~ 1300
1559 ~ 1620
Power Gain
Gp
dB
17.4
15.2
Noise Figure
NF
dB
0.45
0.45
Input Return Loss
RLin
dB
-12
-10
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-18
-18
Po(1dB)
dBm
17
18
OIP3
dBm
30
32
Id
mA
40
40
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=6.8 nH
C1=100 pF
RF IN
*P1
AST54S
C3=0.75 pF
L2=8.2 nH
C2=100 pF
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 1 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
-25
0
1000
1200
1400
1600
-30
1000
1800
1200
Frequency (MHz)
1400
1600
1800
Frequency (MHz)
0
10
9
-5
8
7
Stability Factor
S22 (dB)
-10
-15
-20
-25
6
5
4
3
2
-30
1
-35
1000
1200
1400
1600
1800
0
0
1000
Frequency (MHz)
8/26
2000
3000
4000
5000
6000
7000
8000
9000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
GPS,GLONASS,Galileo,Compass
1100 ~ 1700 MHz
+5 V, 15 mA
Frequency (MHz)
Parameter
Symbol
Unit
1100
1400
1700
Power Gain
Gp
dB
17.6
15.8
14.1
Noise Figure
NF
dB
0.55
0.50
0.50
Input Return Loss
RLin
dB
-13
-14
-14
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-14
-14
-13
Po(1dB)
dBm
10
11
12
OIP3
dBm
23
24
25
Id
mA
15
15
15
1) OIP3 is measured with two tones at an output power of –5 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
VDD
R1=820 
C5=1 uF
R3=160 
C4=1 nF
R2=5.1 k
L1=6.8 nH
C1=100 pF
RF IN
L2=27 nH
*P1
AST54S
C3=0.5 pF
C2=100 pF
RF OUT
*P1
R4=390 
L3=22 nH
Bottom
C6=1 nF
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.4mm Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
20
5
0
-5
S11 (dB)
Gain (dB)
15
10
-10
-15
-20
5
-25
0
-30
0
500
1000
1500
2000
2500
3000
0
500
Frequency (MHz)
5
5
0
4
Stability Factor
S22 (dB)
1500
2000
2500
3000
2500
3000
Frequency (MHz)
-5
-10
-15
3
2
1
-20
0
0
500
1000
1500
2000
2500
3000
0
Frequency (MHz)
9/26
1000
500
1000
1500
2000
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WCDMA
S11 < -18 dB &
Low Noise
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 2 GHz
12.8
12.9
dB
Noise Figure
NF
F = 2 GHz
0.5
0.5
dB
Input Return Loss
RLin
F = 2 GHz
-18
-18
dB
Output Return Loss
RLout
F = 2 GHz
-10
-10
dB
Po(1dB)
F = 2 GHz
19
20
dBm
OIP3
F = 2 GHz
34
36
dBm
Id
F = 2 GHz
Non-RF
40
60
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
2000 MHz
+5 V
Circuit Current
TYP.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.2 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
20
-5
-10
S11 (dB)
Gain (dB)
15
10
5
0
1700
-15
-20
1800
1900
2000
2100
2200
-25
1700
2300
1800
1900
2000
2100
2200
2300
Frequency (MHz)
Frequency (MHz)
0
5
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
1700
0
1800
1900
2000
2100
2200
2300
0
500
Frequency (MHz)
10/26
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WCDMA
S11 < -18 dB &
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 2 GHz
14.5
14.6
dB
Noise Figure
NF
F = 2 GHz
0.6
0.6
dB
Input Return Loss
RLin
F = 2 GHz
-18
-18
dB
Output Return Loss
RLout
F = 2 GHz
-12
-12
dB
Po(1dB)
F = 2 GHz
19
20
dBm
OIP3
F = 2 GHz
34
36
dBm
Id
F = 2 GHz
Non-RF
40
60
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
High Gain
2000 MHz
+5 V
Circuit Current
TYP.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 0.75 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
5
30
o
-40 c
o
25 c
o
85 c
0
25
o
-40 c
o
25 c
o
85 c
20
Gain (dB)
S11 (dB)
-5
-10
15
10
-15
5
-20
0
500
1000
1500
2000
2500
3000
0
3500
0
500
1000
Frequency (MHz)
1500
2000
2500
3000
3500
2500
3000
3500
Frequency (MHz)
0
5
o
-40 c
o
25 c
o
85 c
4
Stability Factor
-5
S22 (dB)
-10
-15
3
2
1
-20
0
-25
0
500
1000
1500
2000
2500
3000
3500
0
500
11/26
1000
1500
2000
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
Gain vs. Temperature
Current vs. Temperature
17
45
16
43
Gain (dB)
Current (mA)
15
41
39
14
13
Frequency = 2000 MHz
Frequency = 2000 MHz
37
12
35
-60
-40
-20
0
20
40
60
80
11
-60
100
-40
-20
38
21
36
Output IP3 (dBm)
P1dB (dBm)
23
19
17
Frequency = 2000 MHz
-40
-20
0
40
60
80
100
Output IP3 vs. Temperature
P1dB vs. Temperature
13
-60
20
Temperature ( C)
Temperature ( C)
15
0
o
o
20
40
60
80
34
32
Frequency = 2000 MHz
30
28
-60
100
-40
-20
o
0
20
40
60
80
100
o
Temperature ( C)
Temperature ( C)
Output IP3 vs. Tone Power (Frequency = 2000 MHz)
NF vs. Temperature
50
1.0
45
0.8
0.6
35
NF (dB)
Output IP3 (dBm)
40
30
0.4
o
-40 c
o
25 c
o
85 c
25
20
15
0
1
2
3
4
5
6
7
8
9
Frequency = 2 GHz
0.2
10
0.0
-60
-40
-20
0
20
40
60
80
100
o
Temperature ( C)
Pout per Tone (dBm)
NF vs. Frequency
1.25
1.00
NF (dB)
0.75
0.50
0.25
0.00
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
Frequency (GHz)
12/26
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
SiriusXM
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 2338 MHz
12.2
dB
Noise Figure
NF
F = 2338 MHz
0.55
dB
Input Return Loss
RLin
F = 2338 MHz
-10
dB
Output Return Loss
RLout
F = 2338 MHz
-17
dB
Po(1dB)
F = 2338 MHz
17
dBm
OIP3
F = 2338 MHz
32
dBm
Id
F = 2338 MHz
Non-RF
35
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
2338 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
Vsupply=+5 V
R1=820 
C3=1 nF
C4=1 F
R3=51 
R2=5.1 k
L1=8.2 nH
C1=22 pF
RF IN
L2=15 nH
*P1
C2=22 pF
AST54S
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 1.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
25
5
0
20
-5
S11 (dB)
Gain (dB)
15
10
-10
-15
-20
5
-25
0
1000
1500
2000
2500
3000
3500
-30
1000
1500
2000
Frequency (MHz)
2500
3000
3500
Frequency (MHz)
5
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
3
2
-20
1
-25
-30
1000
0
1500
2000
2500
3000
3500
0
500
Frequency (MHz)
13/26
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
SiriusXM
High IP1dB
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 2338 MHz
8.3
dB
Noise Figure
NF
F = 2338 MHz
0.55
dB
Input Return Loss
RLin
F = 2338 MHz
-13
dB
Output Return Loss
RLout
F = 2338 MHz
-11
dB
Po(1dB)
F = 2338 MHz
20
dBm
OIP3
F = 2338 MHz
34
dBm
Id
F = 2338 MHz
Non-RF
32
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
2338 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Vsupply=+5 V
RD=22 
C6=1 F
R1=560 
C4=12 pF
R2=5.1 k
L1=10 nH
C1=100 pF
RF IN
L2=8.2 nH
*P1
C2=100 pF
AST54S
C3=0.5 pF
RF OUT
NC
Bottom
R3=680 
C5=0.5 pF
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 2.0 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
20
0
15
-5
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-15
5
0
1000
-10
1500
2000
2500
3000
3500
-20
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
0
5
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
1000
1500
2000
2500
3000
3500
0
0
500
Frequency (MHz)
14/26
1000
1500
2000
2500
3000
3500
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WLAN
S11 < -18 dB
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 2.4 GHz
12.5
dB
Noise Figure
NF
F = 2.4 GHz
0.65
dB
Input Return Loss
RLin
F = 2.4 GHz
-20
dB
Output Return Loss
RLout
F = 2.4 GHz
-10
dB
Po(1dB)
F = 2.4 GHz
19
dBm
OIP3
F = 2.4 GHz
34
dBm
Id
F = 2.4 GHz
Non-RF
40
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
2400 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=8.2 nH
C1=22 pF
RF IN
L2=15 nH
*P1
C2=22 pF
AST54S
C3=0.75 pF
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 3.1 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
20
-5
15
S11 (dB)
Gain (dB)
-10
10
-15
-20
5
-25
0
2100
2200
2300
2400
2500
2600
2700
-30
2100
2200
2300
2400
2500
2600
2700
Frequency (MHz)
Frequency (MHz)
0
5
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
2100
2200
2300
2400
2500
2600
2700
0
0
500
Frequency (MHz)
15/26
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WiMAX, LTE
2300 ~ 2700 MHz
+5 V
Frequency
Frequency
Parameter
Symbol
Unit
2300
2700
2300
2700
Power Gain
Gp
dB
13.6
12.3
14.0
12.7
Noise Figure
NF
dB
0.60
0.65
0.65
0.70
Input Return Loss
RLin
dB
-17
-18
-18
-18
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-10
-10
-10
-10
Po(1dB)
dBm
18.5
19.5
20.5
20.5
OIP3
dBm
32
33
35
35
Id
mA
40
40
60
60
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
C5=1 uF
R3=43  @ 40mA
=27  @ 60mA
R1=820 
C4=1 nF
R2=5.1 k
L1=8.2 nH
C1=22 pF
RF IN
L2=15 nH
*P1
C2=22 pF
AST54S
C3=0.75 pF
RF OUT
*P1
C6=0.5 pF
Bottom
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 0.5 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
20
0
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
5
-20
0
2200
2300
2400
2500
2600
2700
2800
-25
2200
2300
2400
Frequency (MHz)
2500
2600
2700
2800
Frequency (MHz)
0
5
4
Stability Factor
S22 (dB)
-5
-10
3
2
-15
1
-20
2200
2300
2400
2500
2600
2700
2800
0
0
500
Frequency (MHz)
16/26
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
LTE 2600
2600 ~ 2700 MHz
+5 V
Frequency
Frequency
2600
2700
2600
2700
dB
13.5
13.2
13.6
13.3
dB
0.6
0.6
0.6
0.6
RLin
dB
-18
-18
-18
-18
RLout
dB
-10
-10
-10
-10
Po(1dB)
dBm
19
19
20
20
OIP3
dBm
32
34
34
34
Id
mA
40
40
60
60
Parameter
Symbol
Unit
Power Gain
Gp
Noise Figure
NF
Input Return Loss
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
C7=1 uF
R3=43  @ 40 mA,
27 @ 60 mA
R1=820 
C4=1 nF
R2=5.1 k
C6=2 pF
L1=10 nH
C1=22 pF
RF IN
L2=12 nH
AST54S
C3=0.75 pF
C2=22 pF
RF OUT
Bottom
C5=1 nF
R4=3.3 k
S-parameters & K-factor
0
20
-5
-10
S11 (dB)
Gain (dB)
15
10
-15
-20
5
-25
0
2300
2400
2500
2600
2700
2800
2900
3000
-30
2300
2400
2500
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
2800
2900
3000
3
2
0
2400
2500
2600
2700
2800
2900
3000
0
500
1000
1500
2000
2500
3000
3500
Frequency (MHz)
Frequency (MHz)
17/26
2700
1
-20
-25
2300
2600
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
WiMAX
S11 < -18 dB
Parameter
Symbol
Test Conditions
Power Gain
Gp
F = 3.3 GHz
10
dB
Noise Figure
NF
F = 3.3 GHz
0.8
dB
Input Return Loss
RLin
F = 3.3 GHz
-18
dB
Output Return Loss
RLout
F = 3.3 GHz
-16
dB
Po(1dB)
F = 3.3 GHz
18
dBm
OIP3
F = 3.3 GHz
37.5
dBm
Id
F = 3.3 GHz
Non-RF
40
mA
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
3300 MHz
+5 V
Circuit Current
MIN.
TYP.
MAX.
Unit
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 23x13 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=10 nH
C1=3 pF
RF IN
L2=8.2 nH
*P1
C2=22 pF
AST54S
C3=0.5 pF
RF OUT
Bottom
*P1
Note: 1) The length of the strip line P1 is given as below at
the PCB with Er = 4.5 and T = 0.8 mm.
P1 Length: 0.7 mm, Width: 0.3 mm
2) Gain and S11 are in trade-off and varied with the length of P1
S-parameters & K-factor
0
20
-5
-10
S11 (dB)
Gain (dB)
15
10
5
0
3000
-15
-20
3100
3200
3300
3400
3500
-25
3000
3600
3100
3200
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
-20
-25
3000
3400
3500
3600
3
2
1
3100
3200
3300
3400
3500
3600
0
0
500
Frequency (MHz)
18/26
3300
Frequency (MHz)
Frequency (MHz)
1000
1500
2000
2500
3000
3500
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
CATV (50 ), FM
50 ~ 1000 MHz
+5 V
Frequency (MHz)
Parameter
Symbol
Unit
50
500
860
Power Gain
Gp
dB
20
19
18
Noise Figure
NF
dB
1.00
1.05
1.10
Input Return Loss
RLin
dB
-18
-12
-16
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-9
-12
-18
Po(1dB)
dBm
15
17
16
OIP3
dBm
26
29
28
Id
mA
40
40
40
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=330 nH
C1=1 nF L3=4.7 nH
RF IN
L2=330 nH
AST54S
C3=2.2 pF
C2=1 nF
RF OUT
Bottom
C6=1 nF
R3=510 
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
5
-15
-20
0
-25
0
200
400
600
800
1000
0
200
Frequency (MHz)
5
-5
4
Stability Factor
0
S22 (dB)
-10
-15
600
800
1000
800
1000
3
2
1
-20
0
-25
0
200
400
600
800
1000
0
200
400
600
Frequency (MHz)
Frequency (MHz)
19/26
400
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
CMMB (50 )
470 ~ 860 MHz
+5 V
Frequency (MHz)
Parameter
Symbol
Unit
470
860
Power Gain
Gp
dB
20
18
Noise Figure
NF
dB
0.9
0.9
Input Return Loss
RLin
dB
-17
-12
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-15
-18
Po(1dB)
dBm
17
16
OIP3
dBm
29
28
Id
mA
40
40
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=39 nH
C1=1 nF L3=2.7 nH
RF IN
L2=330 nH
AST54S
C3=2.2 pF
C2=1 nF
RF OUT
Bottom
C6=1 nF
R3=680 
S-parameters & K-factor
25
5
0
20
-5
S11 (dB)
Gain (dB)
15
10
-10
-15
-20
5
-25
0
-30
0
300
600
900
1200
1500
0
300
600
Frequency (MHz)
900
1200
1500
Frequency (MHz)
5
5
0
4
Stability Factor
S22 (dB)
-5
-10
-15
3
2
-20
1
-25
0
-30
0
300
600
900
1200
1500
0
300
20/26
600
900
1200
1500
1800
2100
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
TETRA
360 ~ 450 MHz
+5 V
Frequency (MHz)
Parameter
Symbol
Unit
360
450
Power Gain
Gp
dB
22.6
22.2
Noise Figure
NF
dB
0.8
0.8
Input Return Loss
RLin
dB
-18
-18
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-12
-12
Po(1dB)
dBm
18
18
OIP3
dBm
29
29
Id
mA
40
40
1) OIP3 is measured with two tones at an output power of +4 dBm/tone separated by 1MHz.
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
Schematic
VDD
R1=820 
R3=43 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=39 nH
C1=1 nF L3=1.2 nH
RF IN
L2=330 nH
AST54S
C3=2.2 pF
C2=1 nF
RF OUT
Bottom
C6=1 nF
R4=1 k
S-parameters & K-factor
0
25
-5
20
S11 (dB)
Gain (dB)
-10
15
10
-15
-20
5
0
-25
-30
0
250
500
750
0
1000
250
500
750
1000
Frequency (MHz)
Frequency (MHz)
0
10
9
-5
8
Stability Factor
7
S22 (dB)
-10
-15
-20
6
5
4
3
2
1
-25
0
0
250
500
750
1000
0
Frequency (MHz)
21/26
500
1000
1500
2000
2500
3000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
IF
20 ~ 108 MHz
+3.3 V
Frequency (MHz)
Parameter
Symbol
Unit
20
108
Power Gain
Gp
dB
18.3
18.2
Noise Figure
NF
dB
1.1
1.1
Input Return Loss
RLin
dB
-18
-18
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-18
-18
Po(1dB)
dBm
7
7
OIP3
dBm
17
17
Id
mA
12
12
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Schematic
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
VDD
R1=820 
R3=62 
C5=1 uF
C4=1 nF
R2=5.1 k
L1=8.2 uH
C1=1 uF
RF IN
L2=8.2 uH
AST54S
C2=1 uF
RF OUT
Bottom
C6=1 nF
R3=510 
S-parameters & K-factor
25
0
-5
-10
15
S11 (dB)
Gain (dB)
20
10
-15
-20
5
-25
0
0
50
100
150
200
-30
250
0
50
Frequency (MHz)
100
150
200
250
Frequency (MHz)
0
10
9
-5
8
7
Stability Factor
S22 (dB)
-10
-15
-20
6
5
4
3
2
-25
1
-30
0
50
100
150
200
250
0
0
Frequency (MHz)
22/26
500
1000
1500
2000
2500
3000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
Wide Band
5 ~ 1000 MHz
+3.2 V
Frequency (MHz)
Parameter
Symbol
Unit
50
500
1000
Power Gain
Gp
dB
20.0
19.0
17.5
Noise Figure
NF
dB
2.0
1.0
1.0
Input Return Loss
RLin
dB
-18
-12
-17
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-10
-13
-18
Po(1dB)
dBm
16
17
17
OIP3
dBm
28
31
30
Id
mA
42
42
42
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
Schematic
Vsupply =+5 V
R1=820 
C4=10 nF
R3=43 
R2=5.1 k
C6=10 F
C7=1 F
L1=8.2 H
RF IN
C1=1 F
L2=8.2 H
L3=4.7 nH
C2=1 F
AST54S
C3=2.2 pF
RF OUT
Bottom
C5=1 F
R4=510 
25
0
20
-5
15
-10
S11 (dB)
Gain (dB)
S-parameters & K-factor
10
-20
5
0
-15
-25
0
200
400
600
800
1000
0
200
Frequency (MHz)
400
600
800
1000
Frequency (MHz)
0
10
9
-5
8
Stability Factor
7
S22 (dB)
-10
-15
-20
6
5
4
3
2
1
-25
0
200
400
600
800
1000
0
0
500
Frequency (MHz)
23/26
1000
1500
2000
2500
3000
Frequency [MHz]
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
FM
88 ~ 108 MHz
+5 V
Frequency (MHz)
Parameter
Symbol
Unit
88
108
Power Gain
Gp
dB
22.3
22.3
Noise Figure
NF
dB
0.65
0.7
Input Return Loss
RLin
dB
-10
-10
Output Return Loss
1 dB Gain Compression
Output Power
3rd Intercept Point
Output Power1)
Circuit Current
RLout
dB
-18
-18
Po(1dB)
dBm
12
12
OIP3
dBm
23
23
Id
mA
24
24
1) OIP3 is measured with two tones at an output power of +0 dBm/tone separated by 1MHz.
Board Layout (FR4, 28x16 mm2, 0.8T)
Top
Schematic
Bottom
30
0
25
-5
20
-10
S11 (dB)
S21 (dB)
S-parameters
15
-15
10
-20
5
-25
0
0
25
50
75
100
125
Frequency (MHz)
150
175
200
25
50
75
100
125
Frequency (MHz)
150
175
200
-30
0
25
50
75
100
125
Frequency (MHz)
150
175
200
0
-10
S22 (dB)
-20
-30
-40
-50
-60
0
24/26
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
APPLICATION CIRCUIT
Trans-impedance Amplifier
50 
50 ~ 2500 MHz
Parameter
Symbol
Unit
Power Gain
Gp
Output Return Loss
EIN
3rd Intercept Point
Output Power1)
RLout
EIN
Circuit Current
Frequency (MHz)
50
200
950
2150
2500
dB
18.9
17.1
15.3
14.9
17.5
dB
pA/rtHz
-10
8.2
-4
6.0
-6
5.8
-5
5.1
-9
8.5
OIP3
dBm
161)
161)
122)
73)
34)
Id
mA
30
1) OIP3 is measured with two tones at an output power of
2) OIP3 is measured with two tones at an output power of
3) OIP3 is measured with two tones at an output power of
4) OIP3 is measured with two tones at an output power of
+5 V
-12 dBm/tone separated by 1MHz.
-16 dBm/tone separated by 1MHz.
-18 dBm/tone separated by 1MHz.
-20 dBm/tone separated by 1MHz.
Board Layout (FR4, 24x16 mm2, 0.8T)
Schematic
Vdiode=+5 V
+Vdiode
+Vdiode
C8=10 F
GND
GND
R6=0 
R7=0 
R3=560 
L5=5.6 nH
R8=200 
Cathode
Cathode
C5=1 nF
C1=1 nF
Anode
Anode
C2=1 nF
Photodiode
Photodiode
R5=8.2 
AST54S
C4=0.5 pF
C3=1 nF
RF OUT
R9=200 
L1=180 nH
(Coil Inductor)
L3
(BLM15HD182SN)
L2=120 nH
(Coil Inductor)
C6=10 nF
ASB Inc.
ASB Inc.
http://www.asb.co.kr
http://www.asb.co.kr
EB-363-D3
C7=1 F
R2=5.1 k
+Vdevice
EB-363-D3
+Vdevice
L4
(BLM15HD182SN)
R1=750 
GND
GND
R4=62 
Vsupply=+5 V
S-parameters
0
30
25
S22 (dB)
Gain (dB)
-5
20
15
-10
10
-15
5
0
-20
0
500
1000
1500
2000
2500
3000
0
500
1000
25/26
1500
2000
2500
3000
Frequency (MHz)
Frequency (MHz)
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
AST54S
High Gain, Low Noise Amplifier
Recommended Soldering Reflow Profile
260 C
Ramp-up
(3 C/sec)
20~40 sec
Ramp-down
(6 C/sec)
200 C
150 C
60~180 sec
Copyright 2011-2017 ASB Inc. All rights reserved. Datasheet subject to change without notice. ASB assumes no
responsibility for any errors which may appear in this datasheet. No part of the datasheet may be copied or
reproduced in any form or by any means without the prior written consent of ASB.
26/26
ASB Inc.  [email protected]  Tel: +82-42-528-7225
April 2017
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