AUTOMOTIVE GRADE
PD - 97715A
AUIRFS4310Z
HEXFET® Power MOSFET
Features
●
●
●
●
●
●
●
●
D
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Repetitive Avalanche Allowed up to Tjmax
Lead-Free, RoHS Compliant
Automotive Qualified *
G
S
VDSS
RDS(on) typ.
max.
ID (Silicon Limited)
100V
4.8m:
6.0m:
127A
ID (Package Limited)
120A
c
D
Description
Specifically designed for Automotive applications, this HEXFET®
Power MOSFET utilizes the latest processing techniques to
achieve extremely low on-resistance per silicon area. Additional
features of this design are a 175°C junction operating temperature,
fast switching speed and improved repetitive avalanche rating .
These features combine to make this design an extremely efficient
and reliable device for use in Automotive applications and a wide
variety of other applications.
G
D
S
D2Pak
AUIRFS4310Z
G
D
S
Gate
Drain
Source
Absolute Maximum Ratings
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only; and
functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under
board mounted and still air conditions. Ambient temperature (T A) is 25°C, unless otherwise specified.
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
Parameter
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Wire Bond Limited)
d
Pulsed Drain Current
Maximum Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy (Thermally Limited)
Avalanche Current
Repetitive Avalanche Energy
d
f
d
e
Max.
Units
127
90
120
560
250
1.7
± 20
130
See Fig. 14, 15, 22a, 22b,
A
c
c
18
-55 to + 175
Peak Diode Recovery
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
(1.6mm from case)
dv/dt
TJ
TSTG
W
W/°C
V
mJ
A
mJ
V/ns
°C
300
Thermal Resistance
Symbol
RJC
RJA
Parameter
k
Junction-to-Case
Junction-to-Ambient (PCB Mount)
j
Typ.
Max.
Units
–––
–––
0.6
40
°C/W
HEXFET® is a registered trademark of International Rectifier.
*Qualification standards can be found at http://www.irf.com/
www.irf.com
1
10/10/11
AUIRFS4310Z
Static Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
V(BR)DSS
V(BR)DSS/TJ
RDS(on)
VGS(th)
gfs
RG
IDSS
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Internal Gate Resistance
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
100
–––
–––
2.0
150
–––
–––
–––
–––
–––
–––
0.11
4.8
–––
–––
0.7
–––
–––
–––
–––
–––
–––
6.0
4.0
–––
–––
20
250
100
-100
Conditions
V
VGS = 0V, ID = 250μA
V/°C Reference to 25°C, ID = 5mA
m VGS = 10V, ID = 75A
V
VDS = VGS, ID = 150μA
S
VDS = 50V, ID = 75A
μA VDS = 100V, VGS = 0V
VDS = 80V, VGS = 0V, TJ = 125°C
nA VGS = 20V
VGS = -20V
g
Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Qg
Qgs
Qgd
Qsync
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Coss eff. (ER)
Coss eff. (TR)
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Effective Output Capacitance (Energy Related)
Effective Output Capacitance (Time Related)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
120
29
35
85
20
60
55
57
6860
490
220
570
920
170
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
nC
Min.
Typ. Max. Units
–––
–––
Conditions
ID = 75A
VDS =50V
VGS = 10V
ID = 75A, VDS =0V, VGS = 10V
VDD = 65V
ID = 75A
RG = 2.7
VGS = 10V
VGS = 0V
VDS = 50V
ƒ = 1.0MHz, See Fig. 5
VGS = 0V, VDS = 0V to 80V , See Fig. 11
VGS = 0V, VDS = 0V to 80V
g
ns
pF
g
i
h
Diode Characteristics
Symbol
IS
Parameter
Continuous Source Current
VSD
trr
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
ton
Reverse Recovery Current
Forward Turn-On Time
ISM
d
–––
c
560
Conditions
A
MOSFET symbol
A
showing the
integral reverse
D
G
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V
TJ = 25°C
VR = 85V,
TJ = 125°C
IF = 75A
di/dt = 100A/μs
TJ = 25°C
S
g
–––
–––
1.3
V
–––
40
–––
ns
–––
49
–––
–––
58
–––
nC
TJ = 125°C
–––
89
–––
TJ = 25°C
–––
2.5
–––
A
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction
temperature. Bond wire current limit is 120A. Note that current
limitations arising from heating of the device leads may occur with
some lead mounting arrangements.
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.047mH
RG = 25, IAS = 75A, VGS =10V. Part not recommended for use
above the Eas value and test conditions.
ISD 75A, di/dt 600A/μs, VDD V(BR)DSS, TJ 175°C.
2
–––
127
g
Pulse width 400μs; duty cycle 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS .
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
R is measured at TJ approximately 90°C
www.irf.com
AUIRFS4310Z
Qualification Information
†
Automotive
(per AEC-Q101)
Qualification Level
††
Comments: This part number(s) passed Automotive
qualification. IR’s Industrial and Consumer qualification level
is granted by extension of the higher Automotive level.
Moisture Sensitivity Level
Machine Model
D2Pak
MSL1
Class M4 (+/- 800V)†††
AEC-Q101-002
ESD
Human Body Model
Class H2 (+/- 4000V)†††
AEC-Q101-001
Charged Device Model
Class C5 (+/- 2000V)†††
AEC-Q101-005
RoHS Compliant
Yes
Qualification standards can be found at International Rectifiers web site: http//www.irf.com/
Exceptions (if any) to AEC-Q101 requirements are noted in the qualification report.
Highest passing voltage.
www.irf.com
3
AUIRFS4310Z
1000
1000
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
100
BOTTOM
VGS
15V
10V
8.0V
6.0V
5.5V
5.0V
4.8V
4.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
10
4.5V
BOTTOM
100
4.5V
60μs PULSE WIDTH
Tj = 175°C
60μs PULSE WIDTH
Tj = 25°C
1
10
0.1
1
10
100
0.1
VDS , Drain-to-Source Voltage (V)
2.5
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current)
100
Fig 2. Typical Output Characteristics
1000
100
TJ = 175°C
10
TJ = 25°C
1
VDS = 50V
60μs PULSE WIDTH
0.1
2.0
3.0
4.0
5.0
6.0
7.0
ID = 75A
VGS = 10V
2.0
1.5
1.0
0.5
8.0
-60 -40 -20 0
VGS, Gate-to-Source Voltage (V)
12000
VGS, Gate-to-Source Voltage (V)
Coss = Cds + Cgd
8000
Ciss
6000
4000
Coss
2000
Crss
ID= 75A
VDS = 80V
VDS= 50V
VDS= 20V
16
12
8
4
0
0
1
Fig 4. Normalized On-Resistance vs. Temperature
20
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
10000
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
10
VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
10
100
VDS , Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
4
1
0
40
80
120
160
200
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
www.irf.com
AUIRFS4310Z
10000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
1000
TJ = 175°C
100
TJ = 25°C
10
1
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1000
1msec
100
10msec
10
1
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
2.0
LIMITED BY PACKAGE
120
100
80
60
40
20
0
75
100
125
150
175
V(BR)DSS , Drain-to-Source Breakdown Voltage
140
50
10
100
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
25
1
VDS, Drain-toSource Voltage (V)
VSD, Source-to-Drain Voltage (V)
ID, Drain Current (A)
DC
0.1
0.1
130
ID = 5mA
120
110
100
90
-60 -40 -20 0
TC, Case Temperature (°C)
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature (°C)
Fig 9. Maximum Drain Current vs.
Case Temperature
Fig 10. Drain-to-Source Breakdown Voltage
EAS, Single Pulse Avalanche Energy (mJ)
3.0
2.5
2.0
Energy (μJ)
100μsec
1.5
1.0
0.5
0.0
600
I D
11A
19A
BOTTOM 75A
TOP
500
400
300
200
100
0
0
20
40
60
80
VDS, Drain-to-Source Voltage (V)
Fig 11. Typical COSS Stored Energy
www.irf.com
100
25
50
75
100
125
150
175
Starting TJ, Junction Temperature (°C)
Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
5
AUIRFS4310Z
1
Thermal Response ( ZthJC )
D = 0.50
0.20
0.10
0.1
0.05
J
0.02
0.01
0.01
R1
R1
J
1
R2
R2
R3
R3
R4
R4
C
2
1
2
3
4
3
Ci= iRi
Ci iRi
SINGLE PULSE
( THERMAL RESPONSE )
4
Ri (°C/W)
0.018756
0.159425
0.320725
0.101282
(sec)
0.000007
0.000117
0.001817
0.011735
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.001
1E-006
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case
100
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming Tj = 150°C and
Tstart =25°C (Single Pulse)
Avalanche Current (A)
Duty Cycle = Single Pulse
0.01
10
0.05
0.10
Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming j = 25°C and
Tstart = 150°C.
1
0.1
1.0E-06
1.0E-05
1.0E-04
1.0E-03
1.0E-02
1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth
EAR , Avalanche Energy (mJ)
140
Notes on Repetitive Avalanche Curves , Figures 14, 15:
(For further info, see AN-1005 at www.irf.com)
1. Avalanche failures assumption:
Purely a thermal phenomenon and failure occurs at a temperature far in
excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
6. Iav = Allowable avalanche current.
7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14).
tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
TOP
Single Pulse
BOTTOM 1% Duty Cycle
ID = 75A
120
100
80
60
40
20
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature (°C)
PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
6
www.irf.com
AUIRFS4310Z
24
ID = 1.0A
ID = 1.0mA
ID = 250μA
ID = 150μA
4.0
3.5
20
16
IRRM - (A)
VGS(th) Gate threshold Voltage (V)
4.5
3.0
2.5
12
8
2.0
1.5
4
1.0
0
-75 -50 -25
0
25
50
75
100 125 150 175
IF = 30A
VR = 85V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig 16. Threshold Voltage Vs. Temperature
Fig. 17 - Typical Recovery Current vs. dif/dt
24
600
20
500
16
400
QRR - (nC)
IRRM - (A)
TJ , Temperature ( °C )
12
300
200
8
IF = 45A
VR = 85V
4
100
TJ = 125°C
TJ = 25°C
0
IF = 30A
VR = 85V
TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
dif / dt - (A / μs)
Fig. 19 - Typical Stored Charge vs. dif/dt
Fig. 18 - Typical Recovery Current vs. dif/dt
600
500
QRR - (nC)
400
300
200
100
0
IF = 45A
VR = 85V
TJ = 125°C
TJ = 25°C
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
www.irf.com
Fig. 20 - Typical Stored Charge vs. dif/dt
7
AUIRFS4310Z
Driver Gate Drive
D.U.T
+
-
-
*
RG
***
D.U.T. ISD Waveform
Reverse
Recovery
Current
+
dv/dt controlled by RG
Driver same type as D.U.T.
I SD controlled by Duty Factor "D"
D.U.T. - Device Under Test
V DD
**
P.W.
Period
VGS=10V
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
Low Leakage Inductance
Current Transformer
-
D=
Period
P.W.
+
+
-
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
ISD
Ripple 5%
* Use P-Channel Driver for P-Channel Measurements
** Reverse Polarity for P-Channel
*** VGS = 5V for Logic Level Devices
Fig 21. Diode Reverse Recovery Test Circuit for HEXFET® Power MOSFETs
V(BR)DSS
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
tp
+
V
- DD
IAS
tp
A
0.01
I AS
Fig 22a. Unclamped Inductive Test Circuit
RD
V DS
Fig 22b. Unclamped Inductive Waveforms
VDS
90%
VGS
D.U.T.
RG
+
-V DD
10%
VGS
10V
Pulse Width µs
Duty Factor
td(on)
Fig 23a. Switching Time Test Circuit
td(off)
tr
tf
Fig 23b. Switching Time Waveforms
Id
Vds
Vgs
L
DUT
0
20K
1K
VCC
S
Vgs(th)
Qgodr
Fig 24a. Gate Charge Test Circuit
8
Qgd
Qgs2 Qgs1
Fig 24b. Gate Charge Waveform
www.irf.com
AUIRFS4310Z
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
Part Number
AUFS4310Z
YWWA
IR Logo
XX
or
Date Code
Y= Year
WW= Work Week
A= Automotive, Lead Free
XX
Lot Code
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
www.irf.com
9
AUIRFS4310Z
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
4.10 (.161)
3.90 (.153)
FEED DIRECTION 1.85 (.073)
1.65 (.065)
1.60 (.063)
1.50 (.059)
11.60 (.457)
11.40 (.449)
0.368 (.0145)
0.342 (.0135)
15.42 (.609)
15.22 (.601)
24.30 (.957)
23.90 (.941)
TRL
10.90 (.429)
10.70 (.421)
1.75 (.069)
1.25 (.049)
4.72 (.136)
4.52 (.178)
16.10 (.634)
15.90 (.626)
FEED DIRECTION
13.50 (.532)
12.80 (.504)
27.40 (1.079)
23.90 (.941)
4
330.00
(14.173)
MAX.
NOTES :
1. COMFORMS TO EIA-418.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION MEASURED @ HUB.
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
60.00 (2.362)
MIN.
26.40 (1.039)
24.40 (.961)
3
30.40 (1.197)
MAX.
4
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
10
www.irf.com
AUIRFS4310Z
Ordering Information
Base part number
AUIRFS4310Z
www.irf.com
Package Type
D2Pak
Standard Pack
Form
Tube
Tape and Reel Left
Tape and Reel Right
Complete Part Number
Quantity
50
800
800
AUIRFS4310Z
AUIRFS4310ZTRL
AUIRFS4310ZTRR
11
AUIRFS4310Z
IMPORTANT NOTICE
Unless specifically designated for the automotive market, International Rectifier Corporation and its subsidiaries (IR) reserve the right to make corrections,
modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or services without
notice. Part numbers designated with the AU prefix follow automotive industry and / or customer specific requirements with regards to product
discontinuance and process change notification. All products are sold subject to IRs terms and conditions of sale supplied at the time of order
acknowledgment.
IR warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with IRs standard warranty. Testing
and other quality control techniques are used to the extent IR deems necessary to support this warranty. Except where mandated by government
requirements, testing of all parameters of each product is not necessarily performed.
IR assumes no liability for applications assistance or customer product design. Customers are responsible for their products and applications using IR
components. To minimize the risks with customer products and applications, customers should provide adequate design and operating safeguards.
Reproduction of IR information in IR data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated
warranties, conditions, limitations, and notices. Reproduction of this information with alterations is an unfair and deceptive business practice. IR is not
responsible or liable for such altered documentation. Information of third parties may be subject to additional restrictions.
Resale of IR products or serviced with statements different from or beyond the parameters stated by IR for that product or service voids all express and
any implied warranties for the associated IR product or service and is an unfair and deceptive business practice. IR is not responsible or liable for any such
statements.
IR products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or in other applications
intended to support or sustain life, or in any other application in which the failure of the IR product could create a situation where personal injury or death
may occur. Should Buyer purchase or use IR products for any such unintended or unauthorized application, Buyer shall indemnify and hold International
Rectifier and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that IR was negligent regarding the design or manufacture of the product.
Only products certified as military grade by the Defense Logistics Agency (DLA) of the US Department of Defense, are designed and manufactured to
meet DLA military specifications required by certain military, aerospace or other applications. Buyers acknowledge and agree that any use of IR products
not certified by DLA as military-grade, in applications requiring military grade products, is solely at the Buyers own risk and that they are solely responsible
for compliance with all legal and regulatory requirements in connection with such use.
IR products are neither designed nor intended for use in automotive applications or environments unless the specific IR products are designated by IR as
compliant with ISO/TS 16949 requirements and bear a part number including the designation AU. Buyers acknowledge and agree that, if they use any
non-designated products in automotive applications, IR will not be responsible for any failure to meet such requirements.
For technical support, please contact IRs Technical Assistance Center
http://www.irf.com/technical-info/
WORLD HEADQUARTERS:
101 N. Sepulveda Blvd., El Segundo, California 90245
Tel: (310) 252-7105
12
www.irf.com