ASI MSC81090 Npn silicon rf power transistor Datasheet

MSC81090
NPN SILICON RF POWER TRANSISTOR
PACKAGE STYLE .230 4L STUD
DESCRIPTION:
The ASI MSC81090 is Designed for
General Purpose Class A Power
Amplifier Applications from 0.4 - 1.2
GHz.
FEATURES:
• PG = 10 dB min. at 2.0 W/ 1.0 GHz
• Hermetically sealed Package
• Omnigold™ Metalization System
• Emitter Ballasted
MAXIMUM RATINGS
IC
200 A
VCC
35 V
PDISS
6.25 W @ TC ≤ 75 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +200 °C
θJC
20 °C/W
CHARACTERISTICS
COMMON EMITTER
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
BVCBO
IC = 1.0 mA
BVCER
IC = 5.0 mA
BVEBO
IE = 1.0 mA
ICBO
VCB = 28 V
hFE
VCE = 5.0 V
Cob
VCB = 18 V
POUT
ηC
GP
VCE = 18 V
RBE = 10 Ω
IC = 100 mA
MINIMUM TYPICAL MAXIMUM
45
V
45
V
3.5
V
15
f = 1.0 MHz
PIN = 0.2 W
f = 1.0 GHz
UNITS
2.0
50
10
2.2
55
10.4
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.5
mA
120
---
3.2
pF
W
%
dB
REV. A
1/1
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