ON NTR4502PT1G Power mosfet Datasheet

NTR4502P, NVTR4502P
Power MOSFET
−30 V, −1.95 A, Single, P−Channel,
SOT−23
Features
•
•
•
•
•
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Leading Planar Technology for Low Gate Charge/Fast Switching
Low RDS(ON) for Low Conduction Losses
SOT−23 Surface Mount for Small Footprint (3 x 3 mm)
NV Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AEC−Q101 Qualified and
PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) TYP
ID Max (Note 1)
155 mW @ −10 V
−30 V
−1.95 A
240 mW @ −4.5 V
P−Channel MOSFET
S
Applications
•
•
•
•
DC to DC Conversion
Load/Power Switch for Portables and Computing
Motherboard, Notebooks, Camcorders, Digital Camera’s, etc.
Battery Charging Circuits
G
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
−30
V
Gate−to−Source Voltage
VGS
±20
V
ID
−1.95
A
Drain Current (Note 1)
t < 10 s
TA = 25°C
TA = 70°C
Power Dissipation
(Note 1)
t < 10 s
Continuous Drain Current
(Note 1)
Steady
State
Power Dissipation
(Note 1)
TA = 25°C
PD
1.25
W
ID
−1.13
A
TA = 70°C
Steady State
Pulsed Drain Current
−1.56
tp = 10 ms
Drain
3
PD
0.4
W
−6.8
A
TJ,
TSTG
−55 to
150
°C
Source Current (Body Diode)
IS
−1.25
A
Lead Temperature for Soldering Purposes
(1/8 in from case for 10 s)
TL
260
°C
Symbol
Max
Unit
Junction−to−Ambient – Steady State (Note 1)
RqJA
300
°C/W
Junction−to−Ambient – t = 10 s (Note 1)
RqJA
100
TR2 M G
G
SOT−23
CASE 318
STYLE 21
TR2
M
G
−0.90
IDM
Operating Junction and Storage Temperature
MARKING DIAGRAM/
PIN ASSIGNMENT
2
Source
1
Gate
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
NTR4502PT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
NVTR4502PT1G
SOT−23
(Pb−Free)
3000 / Tape & Reel
THERMAL RESISTANCE RATINGS
Parameter
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface−mounted on FR4 board using 1 in sq. pad size
(Cu area = 1.127 in sq. [1 oz] including traces).
© Semiconductor Components Industries, LLC, 2003
October, 2016 − Rev. 6
1
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NTR4502P/D
NTR4502P, NVTR4502P
Electrical Characteristics (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = −250 mA
−30
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V, VDS = −30 V
V
TJ = 25°C
−1
TJ = 55°C
−10
VDS = 0 V, VGS = ±20 V
IGSS
±100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = −250 mA
−3.0
V
Drain−to−Source On Resistance
RDS(on)
VGS = −10 V, ID = −1.95 A
155
200
mW
VGS = −4.5 V, ID = −1.5 A
240
350
gFS
VDS = −10 V, ID=−1.25 A
3
S
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = −15 V
200
pF
Output Capacitance
COSS
80
Reverse Transfer Capacitance
CRSS
50
Forward Transconductance
−1.0
CHARGES AND CAPACITANCES
VGS = −10 V, VDS = −15 V; ID = −1.95 A
10
nC
5.2
10
ns
12
20
td(OFF)
19
35
tf
17.5
30
−1.2
Total Gate Charge
QG(TOT)
6
Threshold Gate Charge
QG(TH)
0.3
Gate−to−Source Charge
QGS
1
Gate−to−Drain Charge
QGD
1.7
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS =−10 V, VDD = −15 V,
ID = −1.95 A, RG = 6 W
DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3)
Forward Diode Voltage
VSD
VGS = 0 V, IS = −1.25 A
−0.8
Reverse Recovery Time
tRR
VGS = 0 V, dISD/dt = 100 A/ms, IS = −1.25 A
23
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Surface−mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
3. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
4. Switching characteristics are independent of operating junction temperatures.
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2
NTR4502P, NVTR4502P
VGS = −4.0 V
VGS = −5.0 V
4
VGS = −3.6 V
VGS = −7.0 V
3
VGS = −3.4 V
VGS = −10 V
VGS = −3.2 V
2
VGS = −3.0 V
1
VGS = −2.8 V
VGS = −2.6 V
VGS = −2.4 V
0
0
1
2
3
4
5
6
7
8
9
VDS = −10 V
5
TJ = 25°C
VGS = −3.8 V
−ID, DRAIN CURRENT (A)
−ID, DRAIN CURRENT (A)
5
TJ = 25°C
TJ = 100°C
3
2
1
0
10
TJ = −55°C
4
1
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.3
0.25
0.2
0.15
0.1
4
5
6
7
8
9
10
4
5
7
6
0.3
TJ = 25°C
VGS = −4.5 V
0.25
0.2
VGS = −10 V
0.15
0.1
1
1.5
2
2.5
3
3.5
4
4.5
5
−VGS, GATE−TO−SOURCE VOLTAGE (V)
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance versus
Gate−to−Source Voltage
Figure 4. On−Resistance versus Drain Current
and Gate Voltage
1000
1.8
ID = −1.9 A
VGS = −10 V
VGS = 0 V
−IDSS, LEAKAGE (nA)
1.6
1.4
1.2
1
0.8
0.6
−50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID = −1.95 A
TJ = 25°C
3
3
Figure 2. Transfer Characteristics
0.4
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.35
2
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 150°C
100
10
TJ = 100°C
1
−25
0
25
50
75
100
125
150
2
TJ, JUNCTION TEMPERATURE (°C)
6
10
14
18
22
26
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
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3
30
NTR4502P, NVTR4502P
500
C, CAPACITANCE (pF)
VDS = 0 V
400
CISS
300
CRSS
TJ = 25°C
VGS = 0 V
CISS
200
COSS
100
CRSS
0
10
5
0
5
10
15
20
25
30
−VGS −VDS
GATE−TO−SOURCE OR DRAIN−TO−SOURCE
VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE
(V)
12
18
QT
10
15
8
12
9
6
QGS
QGD
4
6
2
3
ID = −1.95 A
TJ = 25°C
0
0
0
1
2
3
4
5
6
−VDS, DRAIN−TO−SOURCE VOLTAGE
(V)
Figure 7. Capacitance Variation
7
QG, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage versus Total Charge
100
3
VDS = −15 V
ID = −1.95 V
VGS = −10 V
tf
td(off)
t, TIME (ns)
−IS, SOURCE CURRENT
TJ = 25°C
tr
10
td(on)
2.5
2
1.5
1
0.5
0
1
1
10
100
0.3
0.6
0.9
RG, GATE RESISTANCE (W)
−VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
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4
1.2
NTR4502P, NVTR4502P
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AR
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
0.25
3
E
1
2
T
HE
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
c
SEE VIEW C
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
3X
2.90
3X
0.90
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTR4502P/D