Order this document by MOC8020/D SEMICONDUCTOR TECHNICAL DATA GlobalOptoisolator [CTR = 500% Min] ! ! ! "!"! ! [CTR = 1000% Min] The MOC8020 and MOC8021 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. The chip to Pin 6 base connection has been eliminated to improve the device’s output performance in higher noise environments. • No Base Connection for Improved Noise Immunity • Higher Sensitivity to Low Input Drive Current • To order devices that are tested and marked per VDE 0884 requirements, the suffix ”V” must be included at end of part number. VDE 0884 is a test option. Applications • Appliances, Measuring Instruments • I/O Interfaces for Computers • Programmable Controllers • Portable Electronics • Interfacing and coupling systems of different potentials and impedances • Solid State Relays • Circuits Exposed to High Noise Environments MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating STYLE 3 PLASTIC 6 1 STANDARD THRU HOLE CASE 730A–04 SCHEMATIC 1 6 2 5 3 Symbol Value Unit Reverse Voltage VR 3 Volts Forward Current — Continuous IF 60 mA LED Power Dissipation @ TA = 25°C with Negligible Power in Output Detector Derate above 25°C PD 120 mW 1.41 mW/°C VCEO 50 Volts INPUT LED 4 PIN 1. 2. 3. 4. 5. 6. LED ANODE LED CATHODE N.C. EMITTER COLLECTOR N.C. OUTPUT DETECTOR Collector–Emitter Voltage Collector Current Continuous IC 150 mA VECO 5 Volts PD 150 mW 1.76 mW/°C VISO 7500 Vac(pk) Total Device Power Dissipation @ TA = 25°C Derate above 25°C PD 250 2.94 mW mW/°C Ambient Operating Temperature Range(2) TA – 55 to +100 °C Tstg – 55 to +150 °C TL 260 °C Emitter–Collector Voltage Detector Power Dissipation @ TA = 25°C with Negligible Power in Input LED Derate above 25°C TOTAL DEVICE Isolation Surge Voltage(1) (Peak ac Voltage, 60 Hz, 1 sec Duration) Storage Temperature Range(2) Soldering Temperature (10 sec, 1/16″ from case) 1. Isolation surge voltage is an internal device dielectric breakdown rating. 1. For this test, Pins 1 and 2 are common, and Pins 4 and 5 are common. 2. Refer to Quality and Reliability Section in Opto Data Book for information on test conditions. GlobalOptoisolator is a trademark of Motorola, Inc. REV 1 Optoelectronics Device Data Motorola Motorola, Inc. 1995 1 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)(1) Symbol Min Typ(1) Max Unit Reverse Leakage Current (VR = 3 V) IR — 0.05 10 µA Forward Voltage (IF = 10 mA) VF — 1.15 2 Volts Capacitance (V = 0 V, f = 1 MHz) C — 18 — pF ICEO — — 100 nA Collector–Emitter Base Breakdown Voltage (IC = 1 mA) V(BR)CEO 50 — — Volts Emitter–Collector Breakdown Voltage (IE = 100 µA) V(BR)ECO 5 — — Volts 50 (500) 100 (1000) — — — — Characteristic INPUT LED PHOTODARLINGTON (TA = 25°C and IF = 0, unless otherwise noted) Collector–Emitter Dark Current (VCE = 10 V) COUPLED (TA = 25°C unless otherwise noted) IC (CTR)(2) Collector Output Current (VCE = 5 V, IF = 10 mA) MOC8020 MOC8021 mA (%) Isolation Surge Voltage(3,4), 60 Hz Peak ac, 1 Second VISO 7500 — — Vac(pk) Isolation Resistance(3) (V = 500 V) RISO — 1011 — Ohms Isolation Capacitance(3) (V = 0, f = 1 MHz) CISO — 0.2 — pF ton — 3.5 — µs toff — 95 — tr — 1 — tf — 2 — SWITCHING Turn–On Time Turn–Off Time VCC = 10 V, RL = 100 Ω, IF = 5 mA(5) Rise Time Fall Time 1. 2. 3. 4. 5. Always design to the specified minimum/maximum electrical limits (where applicable). Current Transfer Ratio (CTR) = IC/IF x 100%. For this test, LED Pins 1 and 2 are common and Phototransistor Pins 4 and 5 are common. Isolation Surge Voltage, VISO, is an internal device dielectric breakdown rating. For test circuit setup and waveforms, refer to Figure 9. 2 VF, FORWARD VOLTAGE (VOLTS) PULSE ONLY PULSE OR DC 1.8 1.6 1.4 TA = –55°C 1.2 25°C 100°C 1 1 10 100 IF, LED FORWARD CURRENT (mA) 1000 Figure 1. LED Forward Voltage versus Forward Current 2 I C , OUTPUT COLLECTOR CURRENT (NORMALIZED) TYPICAL CHARACTERISTICS 10 NORMALIZED TO: IF = 10 mA TA = 25°C 1 0.1 TA = –55°C THRU +25°C +70°C +100°C 0.01 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 Figure 2. Output Current versus Input Current Motorola Optoelectronics Device Data 120 IF = 10 mA 100 80 5 mA 60 40 2 mA 20 0 1 mA 0 1 2 3 4 5 6 7 8 9 VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS) 10 1.3 NORMALIZED TO TA = 25°C 1.2 1.1 1 0.9 0.8 0.7 – 60 – 40 – 20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 10 7 5 NORMALIZED TO TA = 25°C 2 1 0.7 0.5 0.2 0.1 – 60 – 40 – 20 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 105 NORMALIZED TO: VCE = 10 V TA = 25°C 104 103 102 VCE = 30 V 10 V 10 1 Figure 5. Collector–Emitter Voltage versus Ambient Temperature 0 20 40 60 80 TA, AMBIENT TEMPERATURE (°C) 100 Figure 6. Collector–Emitter Dark Current versus Ambient Temperature 1000 1000 RL = 1000 VCC = 10 V RL = 1000 t, TIME (µs) t, TIME (µs) 100 100 10 100 100 10 10 10 1 0.1 100 Figure 4. Output Current versus Ambient Temperature ICEO, COLLECTOR–EMITTER DARK CURRENT (NORMALIZED) VCE , COLLECTOR–EMITTER VOLTAGE (NORMALIZED) Figure 3. Collector Current versus Collector–Emitter Voltage IC , OUTPUT COLLECTOR CURRENT (NORMALIZED) IC, COLLECTOR CURRENT (mA) 140 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) Figure 7. Turn–On Switching Times (Typical Value) Motorola Optoelectronics Device Data VCC = 10 V 50 100 1 0.1 0.2 0.5 1 2 5 10 20 IF, LED INPUT CURRENT (mA) 50 100 Figure 8. Turn–Off Switching Times (Typical Value) 3 TEST CIRCUIT WAVEFORMS INPUT PULSE VCC = 10 V RL = 100 Ω IF = 5 mA INPUT 10% OUTPUT OUTPUT PULSE 90% tr tf toff ton Figure 9. Switching Time Test Circuit and Waveforms 4 Motorola Optoelectronics Device Data PACKAGE DIMENSIONS –A– 6 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. 4 –B– 1 3 F 4 PL C N –T– L K SEATING PLANE J 6 PL 0.13 (0.005) G M E 6 PL D 6 PL 0.13 (0.005) M T A B M M T B M A M DIM A B C D E F G J K L M N M INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.300 BSC 0_ 15 _ 0.015 0.100 STYLE 3: PIN 1. 2. 3. 4. 5. 6. MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 7.62 BSC 0_ 15 _ 0.38 2.54 ANODE CATHODE NC EMITTER COLLECTOR NC CASE 730A–04 ISSUE G –A– 6 4 –B– 1 S NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3 F 4 PL L H C –T– G J K 6 PL E 6 PL 0.13 (0.005) D 6 PL 0.13 (0.005) M T A M B M SEATING PLANE T B M A M CASE 730C–04 ISSUE D Motorola Optoelectronics Device Data M DIM A B C D E F G H J K L S INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.020 0.025 0.008 0.012 0.006 0.035 0.320 BSC 0.332 0.390 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.51 0.63 0.20 0.30 0.16 0.88 8.13 BSC 8.43 9.90 *Consult factory for leadform option availability 5 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION L TO CENTER OF LEAD WHEN FORMED PARALLEL. –A– 6 4 –B– 1 3 L N F 4 PL C –T– SEATING PLANE G J K DIM A B C D E F G J K L N INCHES MIN MAX 0.320 0.350 0.240 0.260 0.115 0.200 0.016 0.020 0.040 0.070 0.010 0.014 0.100 BSC 0.008 0.012 0.100 0.150 0.400 0.425 0.015 0.040 MILLIMETERS MIN MAX 8.13 8.89 6.10 6.60 2.93 5.08 0.41 0.50 1.02 1.77 0.25 0.36 2.54 BSC 0.21 0.30 2.54 3.81 10.16 10.80 0.38 1.02 D 6 PL E 6 PL 0.13 (0.005) M T A M B M *Consult factory for leadform option availability CASE 730D–05 ISSUE D Motorola reserves the right to make changes without further notice to any products herein. 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Box 20912; Phoenix, Arizona 85036. 1–800–441–2447 JAPAN: Nippon Motorola Ltd.; Tatsumi–SPD–JLDC, Toshikatsu Otsuki, 6F Seibu–Butsuryu–Center, 3–14–2 Tatsumi Koto–Ku, Tokyo 135, Japan. 03–3521–8315 MFAX: [email protected] – TOUCHTONE (602) 244–6609 INTERNET: http://Design–NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852–26629298 6 ◊ *MOC8020/D* Motorola OptoelectronicsMOC8020/D Device Data