QFET ® FQD7N10 / FQU7N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifiers, high efficiency switching DC/DC converters, and DC motor control. • • • • • • • 5.8A, 100V, RDS(on) = 0.35Ω @VGS = 10 V Low gate charge ( typical 5.8 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability RoHS Compliant D ! D " ! " " " G! G S I-PAK D-PAK FQD Series G D S FQU Series ! S Absolute Maximum Ratings Symbol VDSS ID TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD7N10 / FQU7N10 100 Units V 5.8 A - Continuous (TC = 100°C) 3.67 A 23.2 A IDM Drain Current VGSS Gate-Source Voltage ± 25 V EAS Single Pulsed Avalanche Energy (Note 2) 50 mJ IAR Avalanche Current (Note 1) 5.8 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 2.5 6.0 2.5 mJ V/ns W 25 0.2 -55 to +150 W W/°C °C 300 °C dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 5.0 Units °C/W RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W RθJA Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 October 2008 Symbol TC = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units 100 -- -- V -- 0.1 -- V/°C Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C IDSS IGSSF IGSSR VDS = 100 V, VGS = 0 V -- -- 1 µA VDS = 80 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 25 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -25 V, VDS = 0 V -- -- -100 nA 2.0 -- 4.0 V -- 0.28 0.35 Ω -- 3.3 -- S -- 190 250 pF -- 60 75 pF -- 10 13 pF -- 7 25 ns -- 24 60 ns -- 13 35 ns Zero Gate Voltage Drain Current On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 µA RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 2.9 A gFS Forward Transconductance VDS = 40 V, ID = 2.9 A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 50 V, ID = 7.3 A, RG = 25 Ω (Note 4, 5) VDS = 80 V, ID = 7.3 A, VGS = 10 V (Note 4, 5) -- 19 50 ns -- 5.8 7.5 nC -- 1.4 -- nC -- 2.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 5.8 A ISM -- -- 23.2 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 5.8 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 70 -- ns Qrr Reverse Recovery Charge -- 150 -- nC VGS = 0 V, IS = 7.3 A, dIF / dt = 100 A/µs (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 2.23mH, IAS = 5.8A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 7.3A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300µs, Duty cycle≤ 2% 5. Essentially independent of operating temperature ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 Electrical Characteristics FQD7N10 / FQU7N10 Typical Characteristics VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V Top : ID, Drain Current [A] 10 1 10 ID , Drain Current [A] 1 0 10 150℃ 0 10 25℃ -55℃ ※ Notes : 1. 250μs Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 40V 2. 250μs Pulse Test -1 -1 0 10 10 1 10 2 10 4 6 8 10 VGS , Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1.4 1 IDR , Reverse Drain Current [A] RDS(on) [ Ω ], Drain-Source On-Resistance 1.2 1.0 VGS = 10V 0.8 VGS = 20V 0.6 0.4 0.2 10 0 10 150℃ ※ Notes : 1. VGS = 0V 2. 250μs Pulse Test ※ Note : TJ = 25℃ -1 0.0 0 3 6 9 12 15 18 10 0.2 0.4 0.6 ID , Drain Current [A] 0.8 1.0 1.2 1.4 1.6 1.8 2.0 VSD , Source-Drain Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 12 500 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd ※ Notes : 1. VGS = 0 V 2. f = 1 MHz Ciss Coss 200 Crss 100 VGS, Gate-Source Voltage [V] 300 VDS = 50V 10 400 Capacitance [pF] 25℃ VDS = 80V 8 6 4 2 ※ Note : ID = 7.3 A 0 -1 10 0 0 10 1 10 VDS, Drain-Source Voltage [V] Figure 5. Capacitance Characteristics ©2008 Fairchild Semiconductor International 0 1 2 3 4 5 6 7 QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A3, October 2008 FQD7N10 / FQU7N10 Typical Characteristics (Continued) 3.0 1.2 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage 2.5 1.1 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μA 0.9 0.8 -100 -50 0 50 100 150 2.0 1.5 1.0 ※ Notes : 1. VGS = 10 V 2. ID = 2.9 A 0.5 0.0 -100 200 -50 o 50 100 150 200 o TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 2 6 10 Operation in This Area is Limited by R DS(on) 5 100 µs 1 10 ID, Drain Current [A] ID, Drain Current [A] 0 TJ, Junction Temperature [ C] 1 ms 10 ms DC 0 10 ※ Notes : o 1. TC = 25 C 4 3 2 1 o 2. TJ = 150 C 3. Single Pulse -1 10 0 1 10 0 25 2 10 10 50 θ JC ( t) , T h e r m a l R e s p o n s e Figure 9. Maximum Safe Operating Area Z 75 100 125 150 TC, Case Temperature [℃] VDS, Drain-Source Voltage [V] Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 ※ N o te s : 1 . Z θ J C ( t ) = 5 . 0 ℃ /W M a x . 2 . D u ty F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .2 0 0 .1 0 .0 5 PDM 0 .0 2 t1 0 .0 1 10 s in g le p u ls e -1 10 -5 10 -4 10 t2 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a t io n [ s e c ] Figure 11. Transient Thermal Response Curve ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2008 Fairchild Semiconductor International ID (t) VDS (t) VDD tp Time Rev. A3, October 2008 FQD7N10 / FQU7N10 Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 Mechanical Dimensions D - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FQD7N10 / FQU7N10 Mechanical Dimensions I - PAK Dimensions in Millimeters ©2008 Fairchild Semiconductor International Rev. A3, October 2008 FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ FQD7N10 / FQU7N10 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 FQD7N10 / FQU7N10 Rev. A3 www.fairchildsemi.com