Kexin BCP54 Npn medium power transistor Datasheet

Transistors
SMD Type
NPN Medium Power Transistor
BCP54; BCP55; BCP56
SOT-223
Unit: mm
0.1max
+0.05
0.90-0.05
High collector current
+0.1
3.00-0.1
1.3 W power dissipation.
+0.15
1.65-0.15
+0.2
3.50-0.2
+0.2
6.50-0.2
Features
+0.2
0.90-0.2
+0.3
7.00-0.3
4
1
1 base
3
2
+0.1
0.70-0.1
2.9
4.6
2 collector
3 emitter
Absolute Maximum Ratings Ta = 25
Parameter
collector-base voltage
Symbol
BCP54
BCP55
VCBO
BCP56
collector-emitter voltage
BCP54
BCP55
VCEO
BCP56
Rating
Unit
45
V
60
V
100
V
45
V
60
V
80
V
emitter-base voltage
VEBO
5
V
collector current (DC)
IC
1
A
peak collector current
ICM
1.5
A
peak base current
IBM
0.2
A
total power dissipation
Ptot
1.33
W
storage temperature
Tstg
-65 to +150
junction temperature
Tj
150
operating ambient temperature
Tamb
-65 to +150
thermal resistance from junction to ambient
Rth j-a
94
K/W
thermal resistance from junction to soldering point
Rth j-s
13
K/W
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1
Transistors
SMD Type
BCP54; BCP55; BCP56
Electrical Characteristics Ta = 25
Parameter
Symbol
collector cut-off current
ICBO
emitter cut-off current
IEBO
DC current gain
hFE
Testconditons
Min
Typ
Max
Unit
100
nA
IE = 0 A; VCB = 30 V; Tj = 150
10
ìA
IC = 0 A; VEB = 5 V
100
nA
IE = 0 A; VCB = 30 V
IC = 5 mA; VCE = 2 V
63
IC =150 mA; VCE = 2 V
63
IC = 500 mA; VCE = 2 V
40
VCE = 2 V; IC = 150 mA
63
250
DC current gain
BCP54-10; BCP55-10; BCP56-10
hFE
BCP54-16; BCP55-16; BCP56-16
collector-emitter saturation voltage
100
250
VCEsat
IC = 0.5 A; IB = 50 mA
500
mV
base-emitter voltage
VBE
IC = 0.5 A; VCE = 2 V
1
V
transition frequency
fT
DC current gain ratio of the complementary pairs
2
160
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IC = 10 mA; VCE = 5 V; f = 100 MHz
|IC| = 150 mA;|VCE| = 2 V
130
MHz
1.6
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