LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET KEY FEATURES DESCRIPTION For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 125 mA total DC current with the nominal 3.3V bias. With increased bias of 5 V EVM is ~ 4% at 23 dBm. The LX5510 is available in a 16-pin 3mmx3mm micro-lead quad package (MLPQ). The compact footprint, low profile, and excellent thermal capability of the MLPQ package makes the LX5510 an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current Icq ~65mA Power Gain ~20dB @ 2.45GHz and Pout = 19dBm Total Current 125mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) WWW . Microsemi .C OM The LX5510 is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With single low voltage supply of 3.3V 20 dB power gain between 2.4-2.5GHz, at a low quiescent current of 65mA. APPLICATIONS IEEE 802.11b/g PRODUCT HIGHLIGHT PACKAGE ORDER INFO LQ Plastic MLPQ 16 pin RoHS Compliant / Pb-free Transition DC: 0418 LX5510 LX5510LQ Note: Available in Tape & Reel. Append the letters “TR” to the part number. (i.e. LX5510LQ-TR) This device is classified as ESD Level 0 in accordance with JESD22-A114-B, (HBM) testing. Appropriate ESD procedures should be observed when handling this device. Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 1 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET ABSOLUTE MAXIMUM RATINGS PACKAGE PIN OUT * 1 2 11 1 0 9 3 4 8 7 6 N/C RF IN RF IN N/C 5 N/C WWW . Microsemi .C OM 13 14 15 16 12 VB1 VB2 N/C Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to Ground. Currents are positive into, negative out of specified terminal. x denotes respective pin designator 1, 2, or 3 VCC N/C Peak Package Solder Reflow Temp. (40 seconds maximum exposure) ........ 260°C (+0, -5) VC2 RF OUT RF OUT N/C N/C VC1 DC Supply Voltage, RF off ...............................................................................6V Collector Current ........................................................................................400mA Total Power Dissipation....................................................................................2W RF Input Power........................................................................................... 15dBm Operation Ambient Temperature ...................................................-40°C to +85°C Storage Temperature....................................................................-65°C to +150°C * Pad is Ground THERMAL DATA LQ LQ PACKAGE (Bottom View) N/C = No connect Plastic MLPQ 16-Pin THERMAL RESISTANCE-JUNCTION TO CASE, θJC 10°C/W 50°C/W THERMAL RESISTANCE-JUNCTION TO AMBIENT, θJA RoHS / Pb-free 100% Matte Tin Lead Finish FUNCTIONAL PIN DESCRIPTION Name RF IN Description RF input. This pin is DC-shorted to GND but AC-coupled to the transistor base of the first stage. VB1 Bias current control voltage for the first stage. VB2 Bias current control voltage for the second stage. The VB2 pin can be connected with the first stage control voltage (VB1) into a single reference voltage (referred to as Vref) through an external resistor bridge. VCC Supply voltage for the bias reference and control circuits. This pin can be combined with both VC1 and VC2 pins, resulting in a single supply voltage (referred to as Vc). RF OUT RF output. Power supply for first stage amplifier. The VC1 feedline should be terminated with a 3.3 pF bypass capacitor, followed by a 8.2 nH blocking inductor at the supply side. VC2 Power supply for second stage amplifier. The VC2 feedline should be driven with a 8.2 nH AC blocking inductor and 1 uF bypass capacitor. GND The center metal base of the MLP package provides both DC and RF ground as well as heat sink for the power amplifier. Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 2 PACKAGE DATA VC1 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET Parameter ` Symbol Test Conditions Min LX5510 Typ Max Units SECTION HEADER Frequency Range f Power Gain at Pout = 19dBm Gp EVM at Pout = 19dBm Total Current at Pout = 19dBm 2.4 20 64GQAM / 54Mbps Ic_total Quiescent Current Icq Bias Control Reference Current Iref Small-Signal Gain S21 2.5 For Icq = 65mA GHz dB 3.0 % 125 mA 65 mA 1.2 mA 20 dB Gain Flatness ΔS21 Over 100MHz 1 dB Gain Variation Over Temperature ΔS21 0°C to +70°C 1 dB 10 dB Input Return Loss S11 Output Return Loss S22 10 dB Reverse Isolation S12 -40 dB -55 dBc Second Harmonic Pout = 19dBm Third Harmonic Pout = 19dbm -55 dBc Total Current at Pout=23dBm 11 Mbps CCK 180 mA 11 Mbps CCK -52 dBc nd 2 side lobe at 23 dBm Ramp-On Time tON 10 ~ 90% 100 WWW . Microsemi .C OM ELECTRICAL CHARACTERISTICS Test conditions: Vc = 3.3V, Vref = 2.85V, Icq = 65mA, TA = 25°C, unless otherwise specified ns Note: All measured data was obtained on a 10 mil GETEK evaluation board without heat sink. ELECTRICALS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 3 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET 3.3V POWER SWEEP 40 m1 m7 30 Power /dBm, Gain /dB dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 20 10 0 -10 -20 -30 400 25 350 20 300 15 250 10 200 5 150 0 100 -5 50 -50 2.2 2.4 2.6 2.8 -10 3.0 0 -25 -20 -15 freq, GHz -10 0 5 10 Figure 2 (VC = 3.3V, VREF = 2.85V, Icq = 65mA) (Vc = 3.3V, Vref = 2.85V, Icq = 65mA, frequency=2.45 GHz, P1dB=25 dBm) 3.3V EVM DATA 2.45 GHz -5 Output Power / dBm Figure 1 2.4 GHz current 30 -40 2.0 gain Current /mA output power WWW . Microsemi .C OM 3.3V S PARAMETER DATA m1 m7 freq=2.400GHz freq=2.500GHz dB(S(2,1))=20.526 dB(S(2,1))=19.355 3.3V ACP DATA 2.4 GHz 2.5 GHz 10 2.45 GHz 2.5 GHZ -45 9 -47.5 8 ACP_30 MHz /[dBc] EVM_PA /[%] 7 6 5 4 3 2 -50 -52.5 -55 -57.5 1 0 -60 0 2 4 6 8 10 12 14 16 18 20 22 0 2 4 6 8 Output Power /[dBm] 10 12 14 16 18 20 22 Output Power /[dBm] Figure 3 – EVM Data with 54Mb/s 64 QAM OFDM Figure 4 – ACP Data with 54MB/s 64 QAM OFDM (Vc = 3.3V, Vref = 2.85V, Icq = 65mA) (VC = 3.3V, Vref = 2.85V, Icq = 65mA) 3.3V SPECTRUM WITH 23DBM 5V S PARAMETER m1 freq=2.400GHz dB(S(2,1))=21.036 40 DATA m7 freq=2.500GHz dB(S(2,1))=20.043 m1 m7 30 10 0 -10 -20 -30 -40 -50 2.0 2.2 2.4 2.6 2.8 3.0 freq, GHz Figure 5 – Spectrum with 23dBm 11Mb/s CCK (Vc = 3.3V, Vref =2.85V, Icq = 65mA, Ic = 171mA) Copyright © 2000 Rev. 1.0d 2005-08-18 Figure 6 – S-Parameter Data (Vc = 5V, Vref = 2.85V, Icq = 80mA) Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 4 GRAPHS dB(S(2,2)) dB(S(1,1)) dB(S(2,1)) dB(S(1,2)) 20 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET 5V POWER SWEEP 5V EVM DATA WITH 54MB/S 2.45 GHz 2.5 GHz 12 16 WWW . Microsemi .C OM 2.4 GHz 6 EVM_PA /[%] 5 4 3 2 1 0 0 2 4 6 8 10 14 18 20 22 24 Output Power /[dBm] Figure 7 – Power Sweep Figure 8 – EVM Data with 54Mb/s 64QAM OFDM (Vc = 5V, Vref = 2.85V, Icq = 80mA, frequency=2.45 GHz, P1dB=29 dBm) (Vc = 5V, Vref = 2.85V, Icq =80mA,) 5V ACP DATA WITH 54MB/S 2.4 GHz 2.45 GHz 5V SPECTRUM WITH 25DMB 2.5 GHZ -45 ACP_30 MHz /[dBc] -47.5 -50 -52.5 -55 -57.5 -60 0 2 4 6 8 10 12 14 16 18 20 22 24 Output Power /[dBm] Figure 9 – ACP Data with 54Mb/s 64 QAM OFDM (Vc = 5V, Vref = 2.85V, Icq = 80mA) Figure 10 – Spectrum with 25dBm 11Mb/s CCK (Vc = 5V, Vref = 2.85V, Icq = 80mA, Ic = 214mA, Frequency = 2.45GHz) GRAPHS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 5 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET EVALUATION BOARD WWW . Microsemi .C OM Location C1 C2 C3 C4,C5 Recommended BOM Value 2.2 pF (0402) 2.4 pF (0402) 3.3 pF (0402) 1 uF (0603) L1,L2 R1 R2 TL1 TL2 8.2 nH(0402) 350 Ω (0402) 200 Ω (0402) 30/22 mil (L/W) 100/10 mil (L/W) TL3 Substrate 60/10 mil (L/W) 10 mil GETEK εr =3.9, tan δ = 0.01 50Ω Microstrip width: 22 mil EVALUATION Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 6 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET PACKAGE DIMENSIONS WWW . Microsemi .C OM LQ 16-Pin MLPQ 3x3 D b E2 L D2 E or e K A A1 or Pin 1 Indicator A3 Or Dim A A1 A3 b D E e D2 E2 K L L1 MILLIMETERS MIN MAX 0.80 1.00 0 0.05 0.20 REF 0.18 0.30 3.00 BSC 3.00 BSC 0.50 BSC 1.30 1.55 1.30 1.55 0.2 0.35 0.50 0.15 INCHES MIN MAX 0.031 0.039 0 0.002 0.008 REF 0.007 0.012 0.118 BSC 0.118 BSC 0.020 BSC 0.051 0.061 0.051 0.061 0.008 0.012 0.020 0.006 Note: 1. D E2 b L 2. Dimensions do not include mold flash or protrusions; these shall not exceed 0.155mm(.006”) on any side. Lead dimension shall not include solder coverage. Due to multiple qualified assembly sub-contractors either package (with different pin one indicators) may be shipped. Package type will be consistent within the smallest individual container. D2 E L1 e A1 A K MECHANICALS Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 7 LX5510 ® TM InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET WWW . Microsemi .C OM TAPE AND REEL Tape And Reel Specification Ø 1.50mm 4.00mm Top View 1.75mm 3.30mm 5.5 ± 0.05mm 12.00 ± 0.3mm 3.30mm 8.00mm Ø 1.50mm Part Orientation 1.10mm Side View 0.30mm 2.2mm Ø 13mm +1.5 -0.2 10.6mm Ø 330mm ±0.5 Ø 97mm ±1.0 MECHANICALS 13mm +1.5 Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 8 LX5510 TM ® InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET NOTES WWW . Microsemi .C OM NOTES PRODUCTION DATA – Information contained in this document is proprietary to Microsemi and is current as of publication date. This document may not be modified in any way without the express written consent of Microsemi. Product processing does not necessarily include testing of all parameters. Microsemi reserves the right to change the configuration and performance of the product and to discontinue product at any time. Copyright © 2000 Rev. 1.0d 2005-08-18 Microsemi Integrated Products Division 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570 Page 9