Cypress CY7C1386S 18-mbit (512 k ã 36) pipelined dcd sync sram Datasheet

CY7C1386S
18-Mbit (512 K × 36) Pipelined DCD Sync
SRAM
18-Mbit (512 K × 36) Pipelined DCD Sync SRAM
Features
Functional Description
■
Supports bus operation up to 167 MHz
■
Available speed grade is 167 MHz
■
Registered inputs and outputs for pipelined operation
■
Optimal for performance (double-cycle deselect)
■
Depth expansion without wait state
■
3.3 V core power supply (VDD)
■
2.5 V or 3.3 V I/O power supply (VDDQ)
■
Fast clock-to-output times
❐ 3.4 ns (for 167 MHz device)
■
Provides high-performance 3-1-1-1 access rate
■
User selectable burst counter supporting Intel Pentium
interleaved or linear burst sequences
■
Separate processor and controller address strobes
■
Synchronous self timed writes
■
Asynchronous output enable
■
Available in JEDEC-standard Pb-free 100-pin TQFP
■
ZZ sleep mode option
The CY7C1386S SRAM integrates 512 K × 36 SRAM cells with
advanced synchronous peripheral circuitry and a two-bit counter
for internal burst operation. All synchronous inputs are gated by
registers controlled by a positive edge triggered clock input
(CLK). The synchronous inputs include all addresses, all data
inputs, address-pipelining chip enable (CE1), depth expansion
chip enables (CE2 and CE3), burst control inputs (ADSC, ADSP,
and ADV), write enables (BWX, and BWE), and global write
(GW). Asynchronous inputs include the output enable (OE) and
the ZZ pin.
Addresses and chip enables are registered at rising edge of
clock when either address strobe processor (ADSP) or address
strobe controller (ADSC) are active. Subsequent burst
addresses can be internally generated as controlled by the
advance pin (ADV).
Address, data inputs, and write controls are registered on-chip
to initiate a self timed write cycle.This part supports byte write
operations (see Pin Configurations on page 4 and Truth Table on
page 8 for further details). Write cycles can be one to four bytes
wide as controlled by the byte write control inputs. GW active
LOW writes all bytes. This device incorporates an additional
pipelined enable register which delays turning off the output
buffers an additional cycle when a deselect is executed.This
feature allows depth expansion without penalizing system
performance.
The CY7C1386S operates from a +3.3 V core power supply
while all outputs operate with a +3.3 V or +2.5 V supply. All inputs
and outputs are JEDEC-standard and JESD8-5-compatible.
Selection Guide
167 MHz
Unit
Maximum Access Time
Description
3.4
ns
Maximum Operating Current
275
mA
Maximum CMOS Standby Current
70
mA
Cypress Semiconductor Corporation
Document Number: 001-43823 Rev. *E
•
198 Champion Court
•
San Jose, CA 95134-1709
•
408-943-2600
Revised April 22, 2013
CY7C1386S
Logic Block Diagram – CY7C1386S
A0,A1,A
ADDRESS
REGISTER
2 A[1:0]
MODE
ADV
CLK
BURST
Q1
COUNTER AND
LOGIC
CLR
Q0
ADSC
ADSP
BW D
DQ D, DQP D
BYTE
WRITE REGISTER
DQ D, DQP D
BYTE
WRITE DRIVER
BW C
DQ c ,DQP C
BYTE
WRITE REGISTER
DQ c ,DQP C
BYTE
WRITE DRIVER
DQ B ,DQP B
BYTE
WRITE REGISTER
DQ B ,DQP B
BYTE
WRITE DRIVER
BW B
BW A
BWE
GW
CE 1
CE 2
CE 3
OE
ZZ
SENSE
AMPS
OUTPUT
REGISTERS
OUTPUT
BUFFERS
DQs
DQP A
DQP B
DQP C
DQP D
E
DQ A, DQP A
BYTE
WRITE DRIVER
DQ A, DQP A
BYTE
WRITE REGISTER
ENABLE
REGISTER
MEMORY
ARRAY
PIPELINED
ENABLE
INPUT
REGISTERS
CONTROL
Document Number: 001-43823 Rev. *E
Page 2 of 22
CY7C1386S
Contents
Pin Configurations ........................................................... 4
Pin Definitions .................................................................. 5
Functional Overview ........................................................ 6
Single Read Accesses ................................................ 6
Single Write Accesses Initiated by ADSP ................... 6
Single Write Accesses Initiated by ADSC ................... 6
Burst Sequences ......................................................... 7
Sleep Mode ................................................................. 7
Interleaved Burst Address Table ................................. 7
Linear Burst Address Table ......................................... 7
ZZ Mode Electrical Characteristics .............................. 7
Truth Table ........................................................................ 8
Truth Table for Read/Write .............................................. 9
Maximum Ratings ........................................................... 10
Operating Range ............................................................. 10
Electrical Characteristics ............................................... 10
Document Number: 001-43823 Rev. *E
Capacitance .................................................................... 11
Thermal Resistance ........................................................ 11
AC Test Loads and Waveforms ..................................... 11
Switching Characteristics .............................................. 12
Switching Waveforms .................................................... 13
Ordering Information ...................................................... 17
Ordering Code Definitions ......................................... 17
Package Diagrams .......................................................... 18
Acronyms ........................................................................ 19
Document Conventions ................................................. 19
Units of Measure ....................................................... 19
Document History Page ................................................. 20
Sales, Solutions, and Legal Information ...................... 22
Worldwide Sales and Design Support ....................... 22
Products .................................................................... 22
PSoC Solutions ......................................................... 22
Page 3 of 22
CY7C1386S
Pin Configurations
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
CY7C1386S
(512 K × 36)
80
79
78
77
76
75
74
73
72
71
70
69
68
67
66
65
64
63
62
61
60
59
58
57
56
55
54
53
52
51
DQPB
DQB
DQB
VDDQ
VSSQ
DQB
DQB
DQB
DQB
VSSQ
VDDQ
DQB
DQB
VSS
NC
VDD
ZZ
DQA
DQA
VDDQ
VSSQ
DQA
DQA
DQA
DQA
VSSQ
VDDQ
DQA
DQA
DQPA
MODE
A
A
A
A
A1
A0
NC/72M
NC/36M
VSS
VDD
A
A
A
A
A
A
A
A
A
31
32
33
34
35
36
37
38
39
40
41
42
43
44
45
46
47
48
49
50
DQPC
DQC
DQC
VDDQ
VSSQ
DQC
DQC
DQC
DQC
VSSQ
VDDQ
DQC
DQC
NC
VDD
NC
VSS
DQD
DQD
VDDQ
VSSQ
DQD
DQD
DQD
DQD
VSSQ
VDDQ
DQD
DQD
DQPD
100
99
98
97
96
95
94
93
92
91
90
89
88
87
86
85
84
83
82
81
A
A
CE1
CE2
BWD
BWC
BWB
BWA
CE3
VDD
VSS
CLK
GW
BWE
OE
ADSC
ADSP
ADV
A
A
Figure 1. 100-pin TQFP (14 × 20 × 1.4 mm) pinout (3 Chip Enables)
Document Number: 001-43823 Rev. *E
Page 4 of 22
CY7C1386S
Pin Definitions
Name
A0, A1, A
I/O
Description
InputAddress Inputs Used to Select One of the Address Locations. Sampled at the rising edge of the CLK
Synchronous if ADSP or ADSC is active LOW, and CE1, CE2, and CE3 are sampled active. A1:A0 are fed to the two-bit
counter.
BWA, BWB,
InputByte Write Select Inputs, Active LOW. Qualified with BWE to conduct byte writes to the SRAM.
BWC, BWD Synchronous Sampled on the rising edge of CLK.
GW
InputGlobal Write Enable Input, Active LOW. When asserted LOW on the rising edge of CLK, a global write
Synchronous is conducted (all bytes are written, regardless of the values on BWX and BWE).
BWE
InputByte Write Enable Input, Active LOW. Sampled on the rising edge of CLK. This signal must be asserted
Synchronous LOW to conduct a byte write.
CLK
InputClock
Clock Input. Used to capture all synchronous inputs to the device. Also used to increment the burst
counter when ADV is asserted LOW, during a burst operation.
CE1
InputChip Enable 1 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE2
Synchronous and CE3 to select or deselect the device. ADSP is ignored if CE1 is HIGH. CE1 is sampled only when a
new external address is loaded.
CE2
InputChip Enable 2 Input, Active HIGH. Sampled on the rising edge of CLK. Used in conjunction with CE1
Synchronous and CE3 to select or deselect the device. CE2 is sampled only when a new external address is loaded.
CE3
InputChip Enable 3 Input, Active LOW. Sampled on the rising edge of CLK. Used in conjunction with CE1
Synchronous and CE2 to select or deselect the device. CE3 is sampled only when a new external address is loaded.
OE
InputOutput Enable, Asynchronous Input, Active LOW. Controls the direction of the I/O pins. When LOW,
Asynchronous the I/O pins behave as outputs. When deasserted HIGH, DQ pins are tri-stated, and act as input data
pins. OE is masked during the first clock of a read cycle when emerging from a deselected state.
ADV
InputAdvance Input Signal, Sampled on the Rising Edge of Clk, Active LOW. When asserted, it automatSynchronous ically increments the address in a burst cycle.
ADSP
InputAddress Strobe from Processor, Sampled on the Rising Edge of CLK, Active LOW. When asserted
Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized. ASDP is
ignored when CE1 is deasserted HIGH.
ADSC
InputAddress Strobe from Controller, Sampled on the Rising Edge of CLK, Active LOW. When asserted
Synchronous LOW, addresses presented to the device are captured in the address registers. A1:A0 are also loaded
into the burst counter. When ADSP and ADSC are both asserted, only ADSP is recognized.
ZZ
InputZZ Sleep Input, Active High. When asserted HIGH places the device in a non-time critical sleep
Asynchronous condition with data integrity preserved. For normal operation, this pin must be LOW. ZZ pin has an internal
pull down.
DQs, DQPX
I/OBidirectional Data I/O Lines. As inputs, they feed into an on-chip data register that is triggered by the
Synchronous rising edge of CLK. As outputs, they deliver the data contained in the memory location specified by the
addresses presented during the previous clock rise of the read cycle. The direction of the pins is controlled
by OE. When OE is asserted LOW, the pins behave as outputs. When HIGH, DQs and DQPX are placed
in a tri-state condition.
VDD
Power Supply Power Supply Inputs to the Core of the Device.
VSS
Ground
Ground for the Core of the Device.
VSSQ
I/O Ground Ground for the I/O Circuitry.
VDDQ
I/O Power
Supply
Power Supply for the I/O Circuitry.
Document Number: 001-43823 Rev. *E
Page 5 of 22
CY7C1386S
Pin Definitions (continued)
Name
MODE
I/O
Description
InputStatic
Selects Burst Order. When tied to GND selects linear burst sequence. When tied to VDD or left floating
selects interleaved burst sequence. This is a strap pin and must remain static during device operation.
Mode pin has an internal pull up.
NC
–
No Connects. Not internally connected to the die
NC/(36M,
72M, 144M,
288M,
576M, 1G)
–
These Pins are not Connected. They are used for expansion to the 36M, 72M, 144M, 288M, 576M,
and 1G densities.
Functional Overview
All synchronous inputs pass through input registers controlled by
the rising edge of the clock. All data outputs pass through output
registers controlled by the rising edge of the clock.
The CY7C1386S supports secondary cache in systems using
either a linear or interleaved burst sequence. The interleaved
burst order supports Pentium® and i486 processors. The linear
burst sequence is suited for processors that use a linear burst
sequence. The burst order is user selectable, and is determined
by sampling the MODE input. Accesses can be initiated with
either the processor address strobe (ADSP) or the controller
address strobe (ADSC). Address advancement through the
burst sequence is controlled by the ADV input. A two-bit on-chip
wraparound burst counter captures the first address in a burst
sequence and automatically increments the address for the rest
of the burst access.
Byte write operations are qualified with the byte write enable
(BWE) and byte write select (BWX) inputs. A global write enable
(GW) overrides all byte write inputs and writes data to all four
bytes. All writes are simplified with on-chip synchronous self
timed write circuitry.
Synchronous chip selects CE1, CE2, CE3 and an asynchronous
output enable (OE) provide for easy bank selection and output
tri-state control. ADSP is ignored if CE1 is HIGH.
Single Read Accesses
This access is initiated when the following conditions are
satisfied at clock rise: (1) ADSP or ADSC is asserted LOW, (2)
chip selects are all asserted active, and (3) the write signals (GW,
BWE) are all deasserted HIGH. ADSP is ignored if CE1 is HIGH.
The address presented to the address inputs is stored into the
address advancement logic and the address register while being
presented to the memory core. The corresponding data is
allowed to propagate to the input of the output registers. At the
rising edge of the next clock the data is allowed to propagate
through the output register and onto the data bus within tCO if OE
is active LOW. The only exception occurs when the SRAM is
emerging from a deselected state to a selected state, its outputs
are always tri-stated during the first cycle of the access. After the
first cycle of the access, the outputs are controlled by the OE
signal. Consecutive single read cycles are supported.
Document Number: 001-43823 Rev. *E
The CY7C1386S is a double cycle deselect part. After the SRAM
is deselected at clock rise by the chip select and either ADSP or
ADSC signals, its output tri-states immediately after the next
clock rise.
Single Write Accesses Initiated by ADSP
This access is initiated when both of the following conditions are
satisfied at clock rise: (1) ADSP is asserted LOW, and (2) chip
select is asserted active. The address presented is loaded into
the address register and the address advancement logic while
being delivered to the memory core. The write signals (GW,
BWE, and BWX) and ADV inputs are ignored during this first
cycle.
ADSP triggered write accesses require two clock cycles to
complete. If GW is asserted LOW on the second clock rise, the
data presented to the DQx inputs is written into the
corresponding address location in the memory core. If GW is
HIGH, then the write operation is controlled by BWE and BWX
signals.
The CY7C1386S provides byte write capability that is described
in the write cycle description table. Asserting the byte write
enable input (BWE) with the selected byte write input, selectively
writes to only the desired bytes. Bytes not selected during a byte
write operation remains unaltered. A synchronous self timed
write mechanism has been provided to simplify the write
operations.
The CY7C1386S is a common I/O device, the output enable
(OE) must be deasserted HIGH before presenting data to the DQ
inputs. Doing so tri-states the output drivers. As a safety
precaution, DQ are automatically tri-stated whenever a write
cycle is detected, regardless of the state of OE.
Single Write Accesses Initiated by ADSC
ADSC write accesses are initiated when the following conditions
are satisfied: (1) ADSC is asserted LOW, (2) ADSP is deasserted
HIGH, (3) chip select is asserted active, and (4) the appropriate
combination of the write inputs (GW, BWE, and BWX) are
asserted active to conduct a write to the desired byte(s). ADSC
triggered write accesses require a single clock cycle to complete.
The address presented is loaded into the address register and
the address advancement logic while being delivered to the
memory core. The ADV input is ignored during this cycle. If a
global write is conducted, the data presented to the DQX is
Page 6 of 22
CY7C1386S
written into the corresponding address location in the memory
core. If a byte write is conducted, only the selected bytes are
written. Bytes not selected during a byte write operation remains
unaltered. A synchronous self timed write mechanism has been
provided to simplify the write operations.
The CY7C1386S is a common I/O device, the output enable
(OE) must be deasserted HIGH before presenting data to the
DQX inputs. Doing so tri-states the output drivers. As a safety
precaution, DQX are automatically tri-stated whenever a write
cycle is detected, regardless of the state of OE.
entering the sleep mode are not considered valid nor is the
completion of the operation guaranteed. The device must be
deselected prior to entering the sleep mode. CEs, ADSP, and
ADSC must remain inactive for the duration of tZZREC after the
ZZ input returns LOW.
Interleaved Burst Address Table
(MODE = Floating or VDD)
Burst Sequences
The CY7C1386S provides a two-bit wraparound counter, fed by
A[1:0], that implements either an interleaved or linear burst
sequence. The interleaved burst sequence is designed
specifically to support Intel Pentium applications. The linear
burst sequence is designed to support processors that follow a
linear burst sequence. The burst sequence is user selectable
through the MODE input.
Asserting ADV LOW at clock rise automatically increments the
burst counter to the next address in the burst sequence. Both
read and write burst operations are supported.
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
Fourth
Address
A1:A0
00
01
10
11
01
00
11
10
10
11
00
01
11
10
01
00
Fourth
Address
A1:A0
Linear Burst Address Table
(MODE = GND)
Sleep Mode
The ZZ input pin is an asynchronous input. Asserting ZZ places
the SRAM in a power conservation sleep mode. Two clock cycles
are required to enter into or exit from this sleep mode. While in
this mode, data integrity is guaranteed. Accesses pending when
First
Address
A1:A0
Second
Address
A1:A0
Third
Address
A1:A0
00
01
10
11
01
10
11
00
10
11
00
01
11
00
01
10
ZZ Mode Electrical Characteristics
Parameter
Description
Test Conditions
Min
Max
Unit
IDDZZ
Sleep mode standby current
ZZ > VDD– 0.2 V
–
80
mA
tZZS
Device operation to ZZ
ZZ > VDD – 0.2 V
–
2tCYC
ns
tZZREC
ZZ recovery time
ZZ < 0.2 V
2tCYC
–
ns
tZZI
ZZ Active to sleep current
This parameter is sampled
–
2tCYC
ns
tRZZI
ZZ Inactive to exit sleep current
This parameter is sampled
0
–
ns
Document Number: 001-43823 Rev. *E
Page 7 of 22
CY7C1386S
Truth Table
The truth table for CY7C1386S follows. [1, 2, 3, 4, 5]
Operation
Add. Used
CE1 CE2 CE3 ZZ ADSP ADSC ADV WRITE OE CLK
Deselect Cycle, Power Down
None
H
Deselect Cycle, Power Down
None
L
L
X
L
L
X
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
L
X
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
L
X
L
H
L
X
X
X
L–H Tri-State
Deselect Cycle, Power Down
None
L
X
H
L
H
L
X
X
X
L–H Tri-State
Sleep Mode, Power Down
X
X
L
X
L
X
X
X
DQ
L–H Tri-State
None
X
X
X
H
X
X
X
X
X
X
Tri-State
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
L
L–H
Q
Read Cycle, Begin Burst
External
L
H
L
L
L
X
X
X
H
L–H Tri-State
Write Cycle, Begin Burst
External
L
H
L
L
H
L
X
L
X
L–H
D
Q
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
L
L–H
Read Cycle, Begin Burst
External
L
H
L
L
H
L
X
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
X
X
X
L
H
H
L
H
H
L–H Tri-State
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
L
L–H
Read Cycle, Continue Burst
Next
H
X
X
L
X
H
L
H
H
L–H Tri-State
Write Cycle, Continue Burst
Next
X
X
X
L
H
H
L
L
X
L–H
D
Write Cycle, Continue Burst
Next
H
X
X
L
X
H
L
L
X
L–H
D
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
L
L–H
Q
Read Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
H
H
L–H Tri-State
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
L
L–H
Read Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
H
H
L–H Tri-State
Write Cycle, Suspend Burst
Current
X
X
X
L
H
H
H
L
X
L–H
D
Write Cycle, Suspend Burst
Current
H
X
X
L
X
H
H
L
X
L–H
D
Q
Q
Q
Notes
1. X = Don't Care, H = Logic HIGH, L = Logic LOW.
2. WRITE = L when any one or more byte write enable signals, and BWE = L or GW = L. WRITE = H when all byte write enable signals, BWE, GW = H.
3. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
4. The SRAM always initiates a read cycle when ADSP is asserted, regardless of the state of GW, BWE, or BWX. Writes may occur only on subsequent clocks after the
ADSP or with the assertion of ADSC. As a result, OE must be driven HIGH prior to the start of the write cycle to allow the outputs to tri-state. OE is a don't care for
the remainder of the write cycle.
5. OE is asynchronous and is not sampled with the clock rise. It is masked internally during write cycles. During a read cycle all data bits are tri-state when OE is inactive
or when the device is deselected, and all data bits behave as output when OE is active (LOW).
Document Number: 001-43823 Rev. *E
Page 8 of 22
CY7C1386S
Truth Table for Read/Write
The read/write truth table for CY7C1386S follows. [6, 7]
Function (CY7C1386S)
GW
BWE
BWD
BWC
BWB
BWA
Read
H
H
X
X
X
X
Read
H
L
H
H
H
H
Write Byte A – (DQA and DQPA)
H
L
H
H
H
L
Write Byte B – (DQB and DQPB)
H
L
H
H
L
H
Write Bytes B, A
H
L
H
H
L
L
Write Byte C – (DQC and DQPC)
H
L
H
L
H
H
Write Bytes C, A
H
L
H
L
H
L
Write Bytes C, B
H
L
H
L
L
H
Write Bytes C, B, A
H
L
H
L
L
L
Write Byte D – (DQD and DQPD)
H
L
L
H
H
H
Write Bytes D, A
H
L
L
H
H
L
Write Bytes D, B
H
L
L
H
L
H
Write Bytes D, B, A
H
L
L
H
L
L
Write Bytes D, C
H
L
L
L
H
H
Write Bytes D, C, A
H
L
L
L
H
L
Write Bytes D, C, B
H
L
L
L
L
H
Write All Bytes
H
L
L
L
L
L
Write All Bytes
L
X
X
X
X
X
Notes
6. The DQ pins are controlled by the current cycle and the OE signal. OE is asynchronous and is not sampled with the clock.
7. Table only lists a partial listing of the byte write combinations. Any Combination of BWX is valid Appropriate write is done based on which byte write is active.
Document Number: 001-43823 Rev. *E
Page 9 of 22
CY7C1386S
Maximum Ratings
DC Input Voltage ................................ –0.5 V to VDD + 0.5 V
Exceeding maximum ratings may shorten the useful life of the
device. User guidelines are not tested.
Storage Temperature ............................... –65 °C to +150 °C
Ambient Temperature with
Power Applied ......................................... –55 °C to +125 °C
Supply Voltage on VDD Relative to GND .....–0.5 V to +4.6 V
Supply Voltage on VDDQ Relative to GND .... –0.5 V to +VDD
DC Voltage Applied to Outputs
in Tri-State ........................................–0.5 V to VDDQ + 0.5 V
Current into Outputs (LOW) ........................................ 20 mA
Static Discharge Voltage
(per MIL-STD-883, Method 3015) .......................... > 2001 V
Latch-up Current .................................................... > 200 mA
Operating Range
Range
Ambient
Temperature
Commercial
0 °C to +70 °C
VDD
VDDQ
3.3 V– 5% / 2.5 V – 5% to
+ 10%
VDD
Electrical Characteristics
Over the Operating Range
Parameter [8, 9]
Description
VDD
Power Supply Voltage
VDDQ
I/O Supply Voltage
VOH
VOL
VIH
VIL
IX
Test Conditions
Min
3.135
3.135
2.375
2.4
2.0
–
–
2.0
1.7
–0.3
–0.3
–5
for 3.3 V I/O
for 2.5 V I/O
Output HIGH Voltage
for 3.3 V I/O, IOH = –4.0 mA
for 2.5 V I/O, IOH = –1.0 mA
Output LOW Voltage
for 3.3 V I/O, IOL = 8.0 mA
for 2.5 V I/O, IOL = 1.0 mA
Input HIGH Voltage [8]
for 3.3 V I/O
for 2.5 V I/O
Input LOW Voltage [8]
for 3.3 V I/O
for 2.5 V I/O
Input Leakage Current except ZZ GND  VI  VDDQ
and MODE
Input Current of MODE
Input Current of ZZ
Max
Unit
3.6
V
VDD
V
2.625
V
–
V
–
V
0.4
V
0.4
V
VDD + 0.3 V
V
VDD + 0.3 V
V
0.8
V
0.7
V
5
A
Input = VSS
Input = VDD
Input = VSS
Input = VDD
GND  VI  VDDQ, Output Disabled
VDD = Max, IOUT = 0 mA,
6-ns cycle,
f = fMAX = 1/tCYC
167 MHz
–30
–
–5
–
–5
–
–
5
–
30
5
275
A
A
A
A
A
mA
IOZ
IDD [10]
Output Leakage Current
VDD Operating Supply Current
ISB1
Automatic CE Power Down
Current – TTL Inputs
VDD = Max, Device Deselected, 6-ns cycle,
VIN  VIH or VIN  VIL,
167 MHz
f = fMAX = 1/tCYC
–
140
mA
ISB2
Automatic CE Power Down
Current – CMOS Inputs
6-ns cycle,
167 MHz
–
70
mA
ISB3
Automatic CE Power Down
Current – CMOS Inputs
6-ns cycle,
167 MHz
–
125
mA
ISB4
Automatic CE Power Down
Current – TTL Inputs
VDD = Max, Device Deselected,
VIN  0.3 V or VIN > VDDQ – 0.3 V,
f=0
VDD = Max, Device Deselected,
VIN  0.3 V or VIN > VDDQ – 0.3 V,
f = fMAX = 1/tCYC
VDD = Max, Device Deselected,
VIN  VIH or VIN  VIL, f = 0
6-ns cycle,
167 MHz
–
80
mA
Notes
8. Overshoot: VIH(AC) < VDD + 1.5 V (pulse width less than tCYC/2), undershoot: VIL(AC) > –2 V (pulse width less than tCYC/2).
9. TPower up: assumes a linear ramp from 0 V to VDD(min) within 200 ms. During this time VIH < VDD and VDDQ < VDD.
10. The operation current is calculated with 50% read cycle and 50% write cycle.
Document Number: 001-43823 Rev. *E
Page 10 of 22
CY7C1386S
Capacitance
Parameter [11]
Description
100-pin TQFP Unit
Max
Test Conditions
TA = 25 C, f = 1 MHz,
VDD = 3.3 V, VDDQ = 2.5 V
CIN
Input capacitance
CCLK
Clock input capacitance
CIO
Input/Output capacitance
5
pF
5
pF
5
pF
Test Conditions
100-pin TQFP
Package
Unit
Test conditions follow standard test methods and
procedures for measuring thermal impedance, in
accordance with EIA/JESD51.
28.66
°C/W
4.08
°C/W
Thermal Resistance
Parameter [11]
Description
JA
Thermal resistance
(junction to ambient)
JC
Thermal resistance
(junction to case)
AC Test Loads and Waveforms
Figure 2. AC Test Loads and Waveforms
3.3V I/O Test Load
R = 317
3.3V
OUTPUT
OUTPUT
RL = 50
Z0 = 50
GND
5 pF
R = 351
VT = 1.5V
INCLUDING
JIG AND
SCOPE
(a)
2.5V I/O Test Load
OUTPUT
RL = 50
Z0 = 50
INCLUDING
JIG AND
SCOPE
 1 ns
 1 ns
(c)
ALL INPUT PULSES
VDDQ
GND
5 pF
90%
10%
90%
(b)
R = 1538
VT = 1.25V
(a)
10%
R = 1667
2.5V
OUTPUT
ALL INPUT PULSES
VDDQ
(b)
10%
90%
10%
90%
 1 ns
 1 ns
(c)
Note
11. Tested initially and after any design or process change that may affect these parameters.
Document Number: 001-43823 Rev. *E
Page 11 of 22
CY7C1386S
Switching Characteristics
Over the Operating Range
Parameter [12, 13]
tPOWER
Description
VDD(Typical) to the First Access [14]
-167
Unit
Min
Max
1
–
ms
Clock
tCYC
Clock Cycle Time
6.0
–
ns
tCH
Clock HIGH
2.2
–
ns
tCL
Clock LOW
2.2
–
ns
Output Times
tCO
Data Output Valid after CLK Rise
–
3.4
ns
tDOH
Data Output Hold after CLK Rise
1.3
–
ns
Clock to Low Z
[15, 16, 17]
1.3
–
ns
tCHZ
Clock to High Z
[15, 16, 17]
–
3.4
ns
tOEV
OE LOW to Output Valid
–
3.4
ns
0
–
ns
–
3.4
ns
tCLZ
tOELZ
tOEHZ
OE LOW to Output Low Z
[15, 16, 17]
OE HIGH to Output High Z
[15, 16, 17]
Setup Times
tAS
Address Setup Before CLK Rise
1.5
–
ns
tADS
ADSC, ADSP Setup Before CLK Rise
1.5
–
ns
tADVS
ADV Setup Before CLK Rise
1.5
–
ns
tWES
GW, BWE, BWX Setup Before CLK Rise
1.5
–
ns
tDS
Data Input Setup Before CLK Rise
1.5
–
ns
tCES
Chip Enable Setup Before CLK Rise
1.5
–
ns
tAH
Address Hold After CLK Rise
0.5
–
ns
tADH
ADSP, ADSC Hold After CLK Rise
0.5
–
ns
tADVH
ADV Hold After CLK Rise
0.5
–
ns
tWEH
GW, BWE, BWX Hold After CLK Rise
0.5
–
ns
tDH
Data Input Hold After CLK Rise
0.5
–
ns
tCEH
Chip Enable Hold After CLK Rise
0.5
–
ns
Hold Times
Notes
12. Timing reference level is 1.5 V when VDDQ = 3.3 V and is 1.25 V when VDDQ = 2.5 V.
13. Test conditions shown in (a) of Figure 2 on page 11 unless otherwise noted.
14. This part has a voltage regulator internally; tPOWER is the time that the power is supplied above VDD(minimum) initially before a read or write operation can be initiated.
15. tCHZ, tCLZ, tOELZ, and tOEHZ are specified with AC test conditions shown in (b) of Figure 2 on page 11. Transition is measured ±200 mV from steady-state voltage.
16. At any voltage and temperature, tOEHZ is less than tOELZ and tCHZ is less than tCLZ to eliminate bus contention between SRAMs when sharing the same data bus.
These specifications do not imply a bus contention condition, but reflect parameters guaranteed over worst case user conditions. Device is designed to achieve High Z
prior to Low Z under the same system conditions.
17. This parameter is sampled and not 100% tested.
Document Number: 001-43823 Rev. *E
Page 12 of 22
CY7C1386S
Switching Waveforms
Figure 3. Read Cycle Timing [18]
tCYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
tADH
ADSC
t AS
ADDRESS
tAH
A1
A2
t WES
GW, BWE,BW
A3
Burst continued with
new base address
tWEH
X
t CES
Deselect
cycle
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data Out (DQ)
High-Z
CLZ
t OEHZ
Q(A1)
t OEV
t CO
t OELZ
t DOH
Q(A2)
t CHZ
Q(A2 + 1)
Q(A2 + 2)
Q(A2 + 3)
Q(A2)
Q(A2 + 1)
Q(A3)
t CO
Single READ
BURST READ
DON’T CARE
Burst wraps around
to its initial state
UNDEFINED
Note
18. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
Document Number: 001-43823 Rev. *E
Page 13 of 22
CY7C1386S
Switching Waveforms (continued)
Figure 4. Write Cycle Timing [19, 20]
t CYC
CLK
tCH
t ADS
tCL
tADH
ADSP
t ADS
ADSC extends burst
tADH
t ADS
tADH
ADSC
t AS
tAH
A1
ADDRESS
A2
A3
Byte write signals are ignored for first cycle when
ADSP initiates burst
t WES tWEH
BWE,
BW X
t WES tWEH
GW
t CES
tCEH
CE
t ADVS tADVH
ADV
ADV suspends burst
OE
t
Data in (D)
High-Z
t
OEHZ
DS
t
DH
D(A1)
D(A2)
D(A2 + 1)
D(A2 + 3)
D(A3)
D(A3 + 1)
Data Out (Q)
BURST READ
BURST WRITE
Single WRITE
DON’T CARE
Extended BURST WRITE
UNDEFINED
Notes
19. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
20. Full width write can be initiated by either GW LOW, or by GW HIGH, BWE LOW, and BWX LOW.
Document Number: 001-43823 Rev. *E
Page 14 of 22
CY7C1386S
Switching Waveforms (continued)
Figure 5. Read/Write Cycle Timing [21, 22, 23]
t CYC
CLK
tCL
tCH
t ADS
tADH
t AS
tAH
ADSP
ADSC
ADDRESS
A1
A2
A3
A4
A5
A6
t WES tWEH
BWE, BW
X
t CES
tCEH
CE
ADV
OE
t DS
tCO
Data In (D)
t OELZ
High-Z
tCLZ
Data Out (Q)
tDH
High-Z
Q(A1)
tOEHZ
Q(A2)
Back-to-Back READs
D(A5)
D(A3)
Q(A4)
DON’T CARE
Q(A4+3)
BURST READ
Single WRITE
D(A6)
Back-to-Back
WRITEs
UNDEFINED
Notes
21. On this diagram, when CE is LOW, CE1 is LOW, CE2 is HIGH and CE3 is LOW. When CE is HIGH: CE1 is HIGH or CE2 is LOW or CE3 is HIGH.
22. The data bus (Q) remains in high Z following a Write cycle, unless a new read access is initiated by ADSP or ADSC.
23. GW is HIGH.
Document Number: 001-43823 Rev. *E
Page 15 of 22
CY7C1386S
Switching Waveforms (continued)
Figure 6. ZZ Mode Timing [24, 25]
CLK
t
ZZ
I
t
t
ZZ
ZZREC
ZZI
SUPPLY
I
DDZZ
t RZZI
ALL INPUTS
(except ZZ)
Outputs (Q)
DESELECT or READ Only
High-Z
DON’T CARE
Notes
24. Device must be deselected when entering ZZ sleep mode. See cycle descriptions table for all possible signal conditions to deselect the device.
25. DQs are in high Z when exiting ZZ sleep mode.
Document Number: 001-43823 Rev. *E
Page 16 of 22
CY7C1386S
Ordering Information
Not all of the speed, package, and temperature ranges are available. Please contact your local sales representative or visit
www.cypress.com for actual products offered.
Speed
(MHz)
167
Package
Diagram
Ordering Code
CY7C1386S-167AXC
Part and Package Type
51-85050 100-pin TQFP (14 × 20 × 1.4 mm) Pb-free
Operating
Range
Commercial
Ordering Code Definitions
CY 7
C 1386 S - 167
A
X
C
Temperature Range:
C = Commercial
Pb-free
Package Type:
A = 100-pin TQFP
Frequency Range: 167 MHz
Die Revision
Part Identifier: 1386 = DCD, 512 K × 36 (18 Mb)
Technology Code: C = CMOS
Marketing Code: 7 = SRAM
Company ID: CY = Cypress
Document Number: 001-43823 Rev. *E
Page 17 of 22
CY7C1386S
Package Diagrams
Figure 7. 100-pin TQFP (14 × 20 × 1.4 mm) A100RA Package Outline, 51-85050
51-85050 *D
Document Number: 001-43823 Rev. *E
Page 18 of 22
CY7C1386S
Acronyms
Acronym
Document Conventions
Description
Units of Measure
CMOS
Complementary Metal Oxide Semiconductor
I/O
Input/Output
°C
degree Celcius
LSB
Least Significant Bit
MHz
megahertz
MSB
Most Significant Bit
µA
microampere
OE
Output Enable
mA
milliampere
SRAM
Static Random Access Memory
mm
millimeter
TQFP
Thin Quad Flat Pack
ms
millisecond
TTL
Transistor-Transistor Logic
mV
millivolt
WE
Write Enable
ns
nanosecond

ohm
%
percent
pF
picofarad
V
volt
W
watt
Document Number: 001-43823 Rev. *E
Symbol
Unit of Measure
Page 19 of 22
CY7C1386S
Document History Page
Document Title: CY7C1386S, 18-Mbit (512 K × 36) Pipelined DCD Sync SRAM
Document Number: 001-43823
Rev.
ECN No.
Issue Date
Orig. of
Change
**
1897927
See ECN
VKN /
AESA
New data sheet.
*A
2082246
See ECN
JASM
Changed status from Preliminary to Final.
Description of Change
*B
2958560
See ECN
NJY
Updated Ordering Information (Removed inactive part numbers).
*C
3219153
04/07/2011
NJY
Added Ordering Code Definitions.
Updated Package Diagrams.
Added Acronyms and Units of Measure.
Updated in new template.
Document Number: 001-43823 Rev. *E
Page 20 of 22
CY7C1386S
Document History Page (continued)
Document Title: CY7C1386S, 18-Mbit (512 K × 36) Pipelined DCD Sync SRAM
Document Number: 001-43823
Rev.
ECN No.
Issue Date
Orig. of
Change
Description of Change
*D
3571224
04/03/2012
PRIT
Updated Features (Removed 250 MHz, 200 MHz frequencies related
information, removed 119-ball BGA package and 165-ball FBGA package
related information).
Updated Functional Description (Removed the Note “For best practices or
recommendations, please refer to the Cypress application note AN1064,
SRAM System Design Guidelines on www.cypress.com.” and its reference,
removed the Note “CE3, CE2 are for 100-pin TQFP and 165-ball FBGA
packages only. 119-ball BGA is offered only in 1 chip enable.” and its
reference).
Updated Selection Guide (Removed 250 MHz, 200 MHz frequencies related
information).
Removed Logic Block Diagram – CY7C1387S.
Updated Pin Configurations (Removed CY7C1387S related information,
removed 119-ball BGA package and 165-ball FBGA package related
information).
Updated Pin Definitions (Removed the Note “CE3, CE2 are for 100-pin TQFP
and 165-ball FBGA packages only. 119-ball BGA is offered only in 1 chip
enable.” and its reference, removed JTAG related information).
Updated Functional Overview (Removed the Note “CE3, CE2 are for 100-pin
TQFP and 165-ball FBGA packages only. 119-ball BGA is offered only in 1 chip
enable.” and its reference).
Updated Truth Table (Removed CY7C1387S related information).
Removed Truth Table for Read/Write (Corresponding to CY7C1387S).
Removed IEEE 1149.1 Serial Boundary Scan (JTAG).
Removed TAP Controller State Diagram.
Removed TAP Controller Block Diagram.
Removed TAP Timing.
Removed TAP AC Switching Characteristics.
Removed 3.3 V TAP AC Test Conditions.
Removed 3.3 V TAP AC Output Load Equivalent.
Removed 2.5 V TAP AC Test Conditions.
Removed 2.5 V TAP AC Output Load Equivalent.
Removed TAP DC Electrical Characteristics and Operating Conditions.
Removed Identification Register Definitions.
Removed Scan Register Sizes.
Removed Identification Codes.
Removed Boundary Scan Order.
Updated Operating Range (Removed Industrial Temperature range).
Updated Electrical Characteristics (Removed 250 MHz, 200 MHz frequencies
related information).
Updated Capacitance (Removed 119-ball BGA package and 165-ball FBGA
package related information).
Updated Thermal Resistance (Removed 119-ball BGA package and 165-ball
FBGA package related information).
Updated Switching Characteristics (Removed 250 MHz, 200 MHz frequencies
related information).
Updated Package Diagrams (Removed 119-ball BGA package and 165-ball
FBGA package related information).
Replaced all instances of IO with I/O across the document.
*E
3978170
04/22/2013
PRIT
No technical updates. Completing Sunset Review.
Document Number: 001-43823 Rev. *E
Page 21 of 22
CY7C1386S
Sales, Solutions, and Legal Information
Worldwide Sales and Design Support
Cypress maintains a worldwide network of offices, solution centers, manufacturer’s representatives, and distributors. To find the office
closest to you, visit us at cypress.com/sales.
Products
Automotive
Clocks & Buffers
Interface
Lighting & Power Control
PSoC Solutions
cypress.com/go/automotive
cypress.com/go/clocks
psoc.cypress.com/solutions
cypress.com/go/interface
PSoC 1 | PSoC 3 | PSoC 5
cypress.com/go/powerpsoc
cypress.com/go/plc
Memory
Optical & Image Sensing
PSoC
Touch Sensing
cypress.com/go/memory
cypress.com/go/image
cypress.com/go/psoc
cypress.com/go/touch
USB Controllers
Wireless/RF
cypress.com/go/USB
cypress.com/go/wireless
© Cypress Semiconductor Corporation, 2008-2013. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use of
any circuitry other than circuitry embodied in a Cypress product. Nor does it convey or imply any license under patent or other rights. Cypress products are not warranted nor intended to be used for
medical, life support, life saving, critical control or safety applications, unless pursuant to an express written agreement with Cypress. Furthermore, Cypress does not authorize its products for use as
critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress products in life-support systems
application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Any Source Code (software and/or firmware) is owned by Cypress Semiconductor Corporation (Cypress) and is protected by and subject to worldwide patent protection (United States and foreign),
United States copyright laws and international treaty provisions. Cypress hereby grants to licensee a personal, non-exclusive, non-transferable license to copy, use, modify, create derivative works of,
and compile the Cypress Source Code and derivative works for the sole purpose of creating custom software and or firmware in support of licensee product to be used only in conjunction with a Cypress
integrated circuit as specified in the applicable agreement. Any reproduction, modification, translation, compilation, or representation of this Source Code except as specified above is prohibited without
the express written permission of Cypress.
Disclaimer: CYPRESS MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARD TO THIS MATERIAL, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES
OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE. Cypress reserves the right to make changes without further notice to the materials described herein. Cypress does not
assume any liability arising out of the application or use of any product or circuit described herein. Cypress does not authorize its products for use as critical components in life-support systems where
a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress’ product in a life-support systems application implies that the manufacturer
assumes all risk of such use and in doing so indemnifies Cypress against all charges.
Use may be limited by and subject to the applicable Cypress software license agreement.
Document Number: 001-43823 Rev. *E
Revised April 22, 2013
Page 22 of 22
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may be the trademarks of their respective holders.