Mimix CMM3020-BD 30.0 khz-20.0 ghz gaas mmic Datasheet

30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Features
Chip Device Layout
Ultra Wide Band Driver Amplifier
Low Gain Ripple
Positive Gain Slope
9.0 dB Small Signal Gain
+23.0 dBm P1dB Compression Point
+35.0 dBm Third Order Intercept
100% Visual Inspection to MIL-STD-883
Method 2010
General Description
Mimix Broadband’s distributed 30 kHz-20.0 GHz GaAs MMIC
distributed amplifier has a small signal gain of 9.0 dB with a
+23.0 dBm P1dB output compression point. This MMIC uses
Mimix Broadband’s GaAs PHEMT device model technology,
and is based upon electron beam lithography to ensure high
repeatability and uniformity. The chip has surface
passivation to protect and provide a rugged part with
backside via holes and gold metallization to allow either a
conductive epoxy or eutectic solder die attach process. This
device is well suited for Test Instrumentation, Military, Space,
Microwave Point-to-Point Radio, SATCOM and VSAT
applications.
Absolute Maximum Ratings
Supply Voltage (Vd)
Supply Current (Id1)
Gate Voltage (Vg)
Input Power (Pin)
Storage Temperature (Tstg)
Operating Temperature (Ta)
Channel Temperature (Tch)1
+12.0 VDC
350 mA
-5V
+23.0 dBm
-65 to +165 ºC
-55 to +85 ºC
+175 ºC
(1) Channel temperature affects a device's MTTF. It is
recommended to keep channel temperature as low as
possible for maximum life.
Electrical Characteristics (Ambient Temperature T = 25 oC)
Parameter
Frequency Range (f )
Input Return Loss (S11)3
Output Return Loss (S22)3
Small Signal Gain (S21)3
Gain Flatness ( S21)
Reverse Isolation (S12)
Output Power for 1dB Compression (P1dB)2
Output Third Order Intermods (OIP3)2
Saturated Output Power (Psat)2
Drain Bias Voltage (Vd)
Gate Bias Voltage (Vg)
Supply Current (Id) (Vd=8.0V, Vg=-0.5V Typical)
Units
GHz
dB
dB
dB
dB
dB
dBm
dBm
dBm
VDC
VDC
mA
Min.
0.00003
8.0
7.0
7.0
-1.5
-
Typ.
12.0
12.0
9.0
+/-1.0
35.0
+23.0
+35.0
+26.0
+8.0
-0.5
250
Max.
20.0
+9.0
0.0
275
100% on-wafer DC testing and 100% RF wafer qualification. Wafer qualification includes sample testing from each quadrant
with an 80% pass rate required.
(2) Optional high power bias Vd=9.0V will typically yield 2-3 dB increase in P1dB, Psat and OIP3.
(3) Unless otherwise indicated, Min./Max. over 2.0-20.0 GHz and biased at Vd=8.0V.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 1 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Distributed Amplifier Measurements (On Wafer)
CMM3020-BD, Vd=8.0 V (48 devices, 6 wafers)
14
29
13
28
Output Power P1dB (dBm)
12
11
Gain (dB
B)
CMM3020 Vd=8.0 V (48 devices, 6 wafers)
30
10
9
8
7
6
27
26
25
24
23
22
21
20
19
18
5
17
16
4
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
2.0
24.0
4.0
6.0
8.0
Max
Mean
Max
Min
CMM3020-BD, Vd=8.0 V (48 devices, 6 wafers)
0
12.0
14.0
16.0
18.0
20.0
-5
-5
-10
-10
-15
-20
-25
-30
-35
Median
Mean
Min
CMM3020-BD, Vd=8.0 V (48 devices, 6 wafers)
0
Output Return Loss
s (dB)
Input Return Loss
s (dB)
Median
10.0
Frequency (GHz)
Frequency (GHz)
-15
-20
-25
-30
-35
-40
-40
-45
-45
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
Frequency (GHz)
Max
Median
Mean
-3sigma
18.0
20.0
22.0
24.0
-50
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
Max
Median
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Mean
-3sigma
Page 2 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Distributed Amplifier Measurements (Test Fixture)
CMM3020-BD Vd=8.0 V, Id=275 mA
CMM3020-BD Vd=9.0 V, Id=275 mA
14
13
13
12
12
11
11
10
10
Gain (dB
B)
Gain (dB
B)
14
9
8
9
8
7
7
6
6
5
5
4
4
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
0.0
24.0
2.0
4.0
6.0
8.0
+85 Deg C
+85 Deg C
+25 Deg C
CMM3020-BD Vd=8.0 V, Id=275 mA
0
-10
-10
-20
-20
-30
-40
40
-50
-60
-70
14.0
16.0
18.0
20.0
22.0
24.0
-40 deg C
+25 Deg C
-30
40
-40
-50
-60
-70
-80
-80
-90
-90
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
0.0
2.0
4.0
6.0
8.0
Frequency (GHz)
+85 Deg C
-40 Deg C
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
+25 Deg C
+85 Deg C
CMM3020-BD Vd=8.0 V, Id=275 mA
0
-5
-5
-10
-10
-15
-15
-20
-25
-30
-35
-40
-45
+25 Deg C
-20
-25
-30
-35
-40
-45
-50
-50
-55
-55
-60
-40 Deg C
CMM3020-BD Vd=9.0 V, Id=275 mA
0
Input Return Lo
oss (dB)
Input Return Lo
oss (dB)
12.0
CMM3020-BD Vd=9.0 V, Id=275 mA
0
Reverse Isolation (dB)
Reverse Isolattion (dB)
-40 deg C
10.0
Frequency (GHz)
q
y ((GHz))
Frequency
-60
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
Frequency
q
y ((GHz))
+85 Deg C
-40 Deg C
+25 Deg C
20.0
22.0
24.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
Frequency
q
y ((GHz))
+85 Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
-40 Deg C
+25 Deg C
Page 3 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
24.0
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Distributed Amplifier Measurements (Test Fixture) (cont.)
CMM3020-BD Vd=8.0 V, Id=275 mA
-5
-5
-10
-10
-15
-15
-20
-25
-30
-35
-40
-45
-20
-25
-30
-35
-40
-45
-50
-50
-55
-55
-60
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
CMM3020-BD Vd=9.0 V, Id=275 mA
0
Output Return
n Loss (dB)
Output Return
n Loss (dB)
0
20.0
22.0
-60
24.0
0.0
2.0
4.0
6.0
8.0
10.0
Frequency (GHz)
+85 Deg C
-40 Deg C
+25 Deg C
+85 Deg C
CMM3020-BD Vd=8.0 V, Id=250 mA
15
16.0
18.0
20.0
22.0
24.0
-40 Deg C
20.0
22.0
24.0
+25 Deg C
14
13
12
11
12
11
10
Noise Figu
ure (dB)
Noise Figu
ure (dB)
14.0
CMM3020-BD Vd=9.0 V, Id=250 mA
15
14
13
9
8
7
6
5
10
4
3
9
8
7
6
5
4
3
2
1
2
1
0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
0
24.0
0.0
2.0
4.0
6.0
8.0
10.0
Frequency (GHz)
+85 Deg C
12.0
14.0
16.0
18.0
Frequency (GHz)
-40 deg C
+25 Deg C
+85 Deg C
CMM3020-BD Vd=8.0 V, Id=250 mA
30
29
29
28
28
27
26
25
24
23
22
-40 deg C
+25 Deg C
CMM3020-BD Vd=9.0 V, Id=250 mA
30
Output Power Psat (dBm)
Output Power Psat (dBm)
12.0
Frequency (GHz)
27
26
25
24
23
22
21
21
20
20
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
-40 Deg C
24.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
Frequency (GHz)
Frequency (GHz)
+85 Deg C
22.0
+25 Deg C
+85 Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
-40 Deg C
+25 Deg C
Page 4 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Distributed Amplifier Measurements (Test Fixture) (cont.)
CMM3020-BD Vd=8.0 V, Id=250 mA
CMM3020-BD Vd=9.0 V, Id=250 mA
29
28
28
27
27
Output Power P1dB (dBm)
Output Power P1dB (dBm)
29
26
25
24
23
22
21
20
26
25
24
23
22
21
20
19
19
1.0
3.0
5.0
7.0
9.0
11.0
13.0
15.0
17.0
19.0
21.0
23.0
1.0
3.0
5.0
7.0
9.0
11.0
Frequency (GHz)
-40 Deg C
+25 Deg C
+85 Deg C
CMM3020-BD Vd=8.0 V, Id=250 mA
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Output Third Orde
er Intercept (dBm)
er Intercept (dBm)
Output Third Orde
+85 Deg C
2.0
4.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
24.0
2.0
4.0
6.0
+25 Deg C
50
48
46
44
42
40
38
36
34
32
4.0
6.0
8.0
10.0
12.0
Frequency (GHz)
+85 Deg C
-40
40 Deg C
-40 Deg C
8.0
10.0
12.0
+85 Deg C
Output Second Ord
der Intercept (dBm)
Output Second Orrder Intercept (dBm)
-40
40 Deg C
19.0
21.0
23.0
22.0
24.0
+25 Deg C
14.0
16.0
18.0
20.0
14.0
16.0
-40
40 Deg C
+25 Deg C
CMM3020-BD Vd=9.0 V, Id=250 mA
52
2.0
17.0
Frequency (GHz)
CMM3020-BD Vd=8.0 V, Id=250 mA
52
15.0
CMM3020-BD Vd=9.0 V, Id=250 mA
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
Frequency (GHz)
+85 Deg C
13.0
Frequency (GHz)
50
48
46
44
42
40
38
36
34
32
2.0
4.0
6.0
8.0
10.0
12.0
14.0
Frequency (GHz)
+25 Deg C
+85 D
Deg C
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
-40
40 D
Deg C
+25 D
Deg C
Page 5 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
16.0
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Mechanical Drawing
1.150
(0.045)
2
1.059
(0.042)
0.708
(0.028)
3
4
0.526
(0.021)
1
0.449
(0.018)
0.0
2.420
(0.095)
0.0
(Note: Engineering designator is M326)
Units: millimeters (inches) Bond pad dimensions are shown to center of bond pad.
Thickness: 0.110 +/- 0.010 (0.0043 +/- 0.0004), Backside is ground, Bond Pad/Backside Metallization: Gold
All DC and RF Bond Pads vary in size, see DXF layout.
Bond pad centers are approximately 0.109 (0.004) from the edge of the chip.
Dicing tolerance: +/- 0.005 (+/- 0.0002). Approximate weight: 1.73 mg.
Bond Pad #1 (RF In + Vg)
Bond Pad #2 (EXT)
Bond Pad #3 (RF Out + Vd)
Bond Pad #4 (EXT)
Bias Arrangement
Bypass Capacitors - See App Note [2]
2
3
RF Out
(Vd)
4
RF In
(Vg)
1
RF In
(Vg)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
RF Out
(Vd)
Page 6 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
App Note [1] Biasing - As shown in the bonding diagram, this device
is operated with a single drain and gate voltage via RF Out and RF In,
respectively. Bias is nominally Vd=8.0V and Id=250 mA. It is
recommended to use active biasing to keep the currents constant as
the RF power and temperature vary; this gives the most reproducible
results. Depending on the supply voltage available and the power
dissipation constraints, the bias circuit may be a single transistor or a
low power operational amplifier, with a low value resistor in series
with the drain supply used to sense the current. The gate of the
pHEMT is controlled to maintain correct drain current and thus drain voltage. The typical gate voltage needed to do this is
0.5V. Typically the gate is protected with Silicon diodes to limit the applied voltage. Also, make sure to sequence the applied
voltage to ensure negative gate bias is available before applying the positive drain supply.
App Note [2] Bias Arrangement - Each DC pad (EXT1,2) needs to have DC bypass capacitance (117 pF, 560 pF, 0.33 uF) as
close to the device as possible.
MTTF Graphs
These numbers were calculated based upon accelerated life test information received from the fabricating foundry and extensive thermal modeling/
finite element analysis done at Mimix Broadband. The values shown here are only to be used as a guideline against the end application requirements
and only represent reliability information under one bias condition. Ultimately bias conditions and resulting power dissipation along with the
practical aspects, i.e. thermal material stack-up, attach method of device placement are the key parts in determining overall reliability for a specific
application, see previous pages. If the data shown below does not meet your reliability requirements or if the bias conditions are not within your
operating limits please contact technical sales for additional information.
CMM3020-BD Vd=8.0 V, Id=250 mA
1.0E+09
CMM3020-BD Vd=8.0 V, Id=250 mA
1.00E+01
FITS
MTTF (hours)
1.00E+00
1.0E+08
1.00E-01
1.0E+07
1.00E-02
1.0E+06
55
65
75
85
95
105
115
1.00E-03
125
55
65
75
Backplate Temperature (deg C)
85
95
105
115
125
Baseplate Temperature (deg C)
CMM3020-BD Vd=8.0 V, Id=250 mA
160
150
Tch (deg C)
140
130
120
110
100
90
80
55
65
75
85
95
105
115
125
Backplate Temperature (deg C)
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 7 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
30.0 kHz-20.0 GHz GaAs MMIC
Distributed Amplifier
CMM3020-BD
May 2010 - Rev 08-May-10
Handling and Assembly Information
CAUTION! - Mimix Broadband MMIC Products contain gallium arsenide (GaAs) which can be hazardous to the human body and the
environment. For safety, observe the following procedures:
Do not ingest.
Do not alter the form of this product into a gas, powder, or liquid through burning, crushing, or chemical
processing as these by-products are dangerous to the human body if inhaled, ingested, or swallowed.
Observe government laws and company regulations when discarding this product. This product must be
discarded in accordance with methods specified by applicable hazardous waste procedures.
Life Support Policy - Mimix Broadband's products are not authorized for use as critical components in life support devices or
systems without the express written approval of the President and General Counsel of Mimix Broadband. As used herein: (1) Life
support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain
life, and whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be
reasonably expected to result in a significant injury to the user. (2) A critical component is any component of a life support device or
system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its
safety or effectiveness.
ESD - Gallium Arsenide (GaAs) devices are susceptible to electrostatic and mechanical damage. Die are supplied in antistatic
containers, which should be opened in cleanroom conditions at an appropriately grounded antistatic workstation. Devices need
careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers.
Die Attachment - GaAs Products from Mimix Broadband are 0.100 mm (0.004") thick and have vias through to the backside to
enable grounding to the circuit. Microstrip substrates should be brought as close to the die as possible. The mounting surface should
be clean and flat. If using conductive epoxy, recommended epoxies are Tanaka TS3332LD, Die Mat DM6030HK or DM6030HK-Pt cured
in a nitrogen atmosphere per manufacturer's cure schedule. Apply epoxy sparingly to avoid getting any on to the top surface of the
die. An epoxy fillet should be visible around the total die periphery. For additional information please see the Mimix "Epoxy
Specifications for Bare Die" application note. If eutectic mounting is preferred, then a fluxless gold-tin (AuSn) preform, approximately
0.0012 thick, placed between the die and the attachment surface should be used. A die bonder that utilizes a heated collet and
provides scrubbing action to ensure total wetting to prevent void formation in a nitrogen atmosphere is recommended. he gold-tin
eutectic (80% Au 20% Sn) has a melting point of approximately 280 ºC (Note: Gold Germanium should be avoided). The work station
temperature should be 310 ºC +/- 10 ºC. Exposure to these extreme temperatures should be kept to minimum. The collet should be
heated, and the die pre-heated to avoid excessive thermal shock. Avoidance of air bridges and force impact are critical during
placement.
Wire Bonding - Windows in the surface passivation above the bond pads are provided to allow wire bonding to the die's gold bond
pads. The recommended wire bonding procedure uses 0.076 mm x 0.013 mm (0.003" x 0.0005") 99.99% pure gold ribbon with 0.5-2%
elongation to minimize RF port bond inductance. Gold 0.025 mm (0.001") diameter wedge or ball bonds are acceptable for DC Bias
connections. Aluminum wire should be avoided. Thermo-compression bonding is recommended though thermosonic bonding may
be used providing the ultrasonic content of the bond is minimized. Bond force, time and ultrasonics are all critical parameters. Bonds
should be made from the bond pads on the die to the package or substrate. All bonds should be as short as possible.
Part Number for Ordering
Description
CMM3020-BD-000V
PB-CMM3020-BD-0000
RoHS compliant die packed in vacuum release gel packs
CMM3020-BD evaluation module
C a u t i o n : E S D S e n s i t i ve
Appropriate precautions in handling, packaging
and testing devices must be observed.
Proper ESD procedures should be followed when handling this device.
Mimix Broadband, Inc., 10795 Rockley Rd., Houston, Texas 77099
Tel: 281.988.4600 Fax: 281.988.4615 mimixbroadband.com
Page 8 of 8
Characteristic Data and Specifications are subject to change without notice. ©2010 Mimix Broadband, Inc.
Export of this item may require appropriate export licensing from the U.S. Government. In purchasing these parts, U.S. Domestic customers accept
their obligation to be compliant with U.S. Export Laws.
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