ACE17440M N-Channel 40-V (D-S) MOSFET Features Low rDS(on) trench technology Low thermal impedance Fast switching speed VDS (V) 40 PRODUCT SUMMARY rDS(on) (mΩ) 15 @VGS = 10V 18 @VGS = 4.5V ID(A) 15 14 Applications White LED boost converters Automotive Systems Industrial DC/DC Conversion Circuits Absolute Maximum Ratings Parameter Symbol Limit Units Drain-Source Voltage VDS 40 V VGS ±20 V Gate-Source Voltage O TA=25 C Continuous Drain Current a Pulse Drain Current TA=70 C b Continuous Drain Current (Diode Continuous) 15 ID O a 12 IDM 50 IS 6.4 O Power Dissipation a TA=25 C TA=70 C Operating Junction and Storage Temperature Range Parameter Maximum Junction-to-Ambient a Symbol t≦10sec Steady State A 5 PD O A W 3.2 TJ,TSTG -55 to 150 O Maximum Units 25 ℃/W 65 ℃/W RθJA C Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature Packaging Type DFN5*6-8L Ordering information ACE17440M XX + H Halogen - free Pb - free PN: DFN5*6-8L VER 1.1 1 ACE17440M N-Channel 40-V (D-S) MOSFET Electrical Characteristics Parameter Symbol Conditions Min. 1 Typ. Max. Unit Static Gate Source Threshold Voltage VGS(th) VDS=VGS, ID=250uA Gate Body Leakage IGSS VDS=0V, VGS=±20V ±100 Zero Gate Voltage Drain Current IDSS VDS=32V, VGS=0V 1 VDS=32V, VGS=0V, TJ=55℃ 25 On-State Drain-Current a ID(on) Static Drain-Source On-Resistance a rDS(ON) Forward Transconductance a gfS VDS=15V,ID=12A 22 S VSD IS=3.2A ,VGS=0V 0.75 V Diode Forward Voltage a VDS=5V, VGS=10V Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Turn-On Delay Time td(on) Rise Time tf Turn-Off Delay Time td(off) Fall Time tf Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 25 nA uA A VGS=10V,ID=12A 15 VGS=4.5V,ID=9.6A 18 Dynamic Total Gate Charge V mΩ b VDS=20V, VGS=4.5V, ID=12A 19 5.0 nC 9.1 7 VDS=20V, ,RL=1.7Ω ID=12A ,VGEN=10V RGEN=6Ω, 38 ns 62 24 VDS=15V, VGS=0V f=1MHz 1826 253 pF 208 Note: a. Pulse test: PW <= 300us duty cycle <= 2%. b. Guaranteed by design, not subject to production testing. VER 1.1 2 ACE17440M N-Channel 40-V (D-S) MOSFET Typical Electrical Characteristics VER 1.1 3 ACE17440M N-Channel 40-V (D-S) MOSFET VER 1.1 4 ACE17440M N-Channel 40-V (D-S) MOSFET Packing Information DFN5*6-8L SYMBOLS A A1 b c D D1 E E1 E2 e L L1 L2 θ1 DIMENSIONS IN MILLIMETERS MIN NOM MAX 0.85 0.00 0.30 0.15 5.20BSC 4.35BSC 5.55BSC 6.05BSC 3.62BSC 1.27BSC 0.45 0.55 0.65 0 0.15 0.68REF 0° 10° DIMENSIONS IN INCHES MIN NOM MAX 0.033 0.037 0.039 0.000 0.002 0.012 0.016 0.020 0.006 0.008 0.010 0.205BSC 0.171BSC 0.219BSC 0.238BSC 0.143BSC 0.050BSC 0.018 0.022 0.026 0 0.006 0.027REF 0° 10° VER 1.1 5 ACE17440M N-Channel 40-V (D-S) MOSFET Notes ACE does not assume any responsibility for use as critical components in life support devices or systems without the express written approval of the president and general counsel of ACE Electronics Co., LTD. As sued herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, and shoes failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. ACE Technology Co., LTD. http://www.ace-ele.com/ VER 1.1 6