Hittite HMC1030LP5E Dual rms power detector dc - 3.9 ghz Datasheet

HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Features
• Crest Factor (Peak-to-Average Power Ratio)
Measurement
• Envelope-to-Average Power Ratio Measurement
• ± 1 dB Detection Accuracy to 3.9 GHz
• Input Dynamic Range -55 dBm to +15 dBm
• Dual channel and channel difference
output ports
• +5V Operation from -40° C to +85° C
• Excellent Channel Matching and Channel
Isolation
• Integrated Temperature Sensor
• RF Signal Wave Shape & Crest Factor
Independent
• Excellent Temperature Stability
• Power-Down Mode
• 32 Lead 5x5mm SMT Package: 25mm²
Typical Applications
• Log -> Root - Mean - Square (RMS)
Conversion
• Received Signal Strength Indication (RSSI)
• Transmitter Power Control
• Dual Channel wireless infrastructure radio
• Transmitter Signal Strength Indication (TSSI)
• Receiver Automatic Gain Control
• Antenna VSWR Monitor
Functional Diagram
RMS & Envelope Response to WCDMA 4
Carrier with -20dBm RF Input @ 0.9 GHz
80
2.17
ETOUT
RMSOUT
VET, RMS (V)
1.86
60
1.55
40
1.24
20
0.93
0
0.62
-20
0.31
-40
-60
0
RF Input
-80
-0.31
0
200
400
600
800
1000
Time (ns)
11 - 1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
RF Input (mV)
Power Detectors - SMT
11
• Supports Controller Mode
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
General Description
The HMC1030LP5E is a dual-channel RMS power detector designed for high accuracy RF power signal measurement and control applications over the 0.1 to 3.9 GHz frequency range. The device can be used with input signals having RMS values from -60 dBm to +10 dBm referenced to 50 Ohm and large crest factors with no accuracy degradation.
Each RMS detection channel is fully specified for operation up to 3.9 GHz, over a wide dynamic range of 70 dB. The
HMC1030LP5E operates from a single +5V supply and provides two linear-in-dB detection outputs at the RMSA and
RMSB pins with scaled slopes of 37 mV/dB. The RMSA and RMSB channel outputs provide RMS detection performance in terms of dynamic range, logarithmic linearity and temperature stability similar to Hittite’s HMC1021LP4E
RMS Detector. The RMSA and RMSB outputs provide a read of average input signal power, or true-RMS power.
Frequency detection up to 3.9 GHz is possible, with excellent channel matching of less than 1 dB, over a wide range
of input frequencies and with low temperature drift.
The HMC1030LP5E features ETA and ETB pins which provide an accurate voltage output which is linearly proportional to the envelope amplitude of the RF input signal for modulation bandwidths up to 150 MHz. The high bandwidth
envelope detection of the HMC1030LP5E makes it ideal for detecting broadband and high crest factor RF signals
commonly used in CDMA2000, WCDMA, and LTE systems. Additionally, the instantaneous envelope output can be
used to create fast, excessive RF power protection, PA linearization, and efficiency enhancing envelope tracking PA
implementations.
The HMC1030LP5E includes a buffered PTAT temperature sensor output with a temperature scaling factor of 2 mV/°C
yielding a typical output voltage of 567 mV at 0°C.
The HMC1030LP5E operates over the -40 to +85°C temperature range, and is available in a compact, 32-lead 5x5
mm leadless QFN package.
Electrical Specifications I, TA = +25°C, VCCA = VCCB = VCCBS = 5V, Sci3 = Sci1 = 0V,
Sci2= 5V, Unless Otherwise Noted
Parameter
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Units
Dynamic Range (± 1 dB measurement error) [1]
Input Signal Frequency
100
900
1900
2200
2700
3500
3900
MHz
RMSA Output
73
73
71
69
57
48
42
dB
RMSB Output
ETA Output
74
74
72
70
67
50
44
dB
19
20
20
19
19
19
dB
19
20
19
19
19
19
dB
3500
3900
MHz
ETB Output
11
power detectors - SMT
The HMC1030LP5E also provides “channel difference” output ports via pins OUTP and OUTN, permitting measurements of the input signal power ratio between the two power detection channels. These outputs may be used in
single-ended or differential configurations. An input voltage applied to the VLVL input pin is used to set the common
mode voltage reference level for OUTP and OUTN. On the Hittite evaluation board, the VLVL pin is shorted to VREF2
output to provide a nominal bias voltage of 2.5V; but any external bias voltage may be used to set VLVL.
Channel Isolations
Input Signal Frequency
100
900
1900
2200
2700
Input A to RMS B Isolation
(PIN B = -45 dBm, RMS B = RMSBINB ±1 dB)
> 55
> 55
52
49
49
dB
Input B to RMSA Isolation
(PINA = -45 dBm, RMSA = RMSAINA ±1 dB)
> 55
> 55
50
46
45
dB
Input A to RMS B Isolation
(PIN B = -40 dBm, RMS B = RMSBINB ±1 dB)
44
39
dB
Input B to RMSA Isolation
(PINA= -40 dBm, RMSA=RMSAINA ±1 dB)
47
41
dB
Deviation vs Temperature: (Over full temperature range -40°C to 85°C).
Deviation is measured from reference, which is the same WCDMA input at 25 °C
1
dB
Channel Mismatch
<1
dB
[1] With WCDMA 4 Carrier (TM1-64 DPCH)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 2
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Electrical Specifications II, TA = +25 °C, VCCA = VCCB = VCCBS = 5V, Sci3= Sci1 = 0V, Sci2 =
5V, Unless Otherwise Noted
Parameter
Input Signal Frequency
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Typ.
Units
100
900
1900
2200
2700
3500
3900
MHz
Modulation Deviation (Output deviation from reference, which is measured with CW input at equivalent input signal power)
WCDMA 4 Carrier (TM1-64 DPCH) at +25 °C
0.1
0.1
0.1
0.1
0.1
0.1
0.1
dB
WCDMA 4 Carrier (TM1-64 DPCH) at +85 °C
0.2
0.2
0.2
0.2
0.2
0.2
0.2
dB
WCDMA 4 Carrier (TM1-64 DPCH) at -40 °C
0.2
0.2
0.2
0.2
0.2
0.2
0.2
dB
RMSA Logarithmic Slope and Intercept [1]
Power Detectors - SMT
11
Logarithmic Slope
35.5
38.5
37.3
38.2
40.3
45.8
49.9
mV/dB
Logarithmic Intercept
-66.4
-65.8
-63.4
-62
-58.9
-53
-49.5
dBm
Max. Input Power at ±1 dB Error
10
10
10
10
1
-3
-5
dBm
Min. Input Power at ±1 dB Error
-62
-62
-60
-58
-56
-51
-47
dBm
Logarithmic Slope
34.7
34.9
36.2
37
38.8
43.6
47.2
mV/dB
Logarithmic Intercept
-67.5
-67
-65
-63.5
-60.7
-55.2
-51.7
dBm
Max. Input Power at ±1 dB Error
10
10
10
10
9
-3
-5
dBm
Min. Input Power at ±1 dB Error
-64
-64
-62
-61
-58
-53
-49
dBm
V/V
RMSB Logarithmic Slope and Intercept [1]
ETA Linear Slope and Intercept
Linear Slope
14.3
12.3
11.8
10.5
9.1
8.4
Linear Intercept
-65.5
-75.8
-79
-88.2
-102.6
-111.32
mV
Max. Input Power at ±1 dB Error
-12
-10
-9
-9
-8
-8
dBm
Min. Input Power at ±1 dB Error
-31
-30
-29
-28
-27
-27
dBm
V/V
ETB Linear Slope and Intercept
Linear Slope
14.5
12.6
12.2
11.1
9.7
8.9
Linear Intercept
-64.1
-73.7
-76.1
-82.9
-95.1
-103.7
mV
Max. Input Power at ±1 dB Error
-12
-10
-10
-9
-8
-8
dBm
Min. Input Power at ±1 dB Error
-31
-30
-29
-28
-27
-27
dBm
[1] With WCDMA 4 Carrier (TM1-64 DPCH)
11 - 3
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA vs. Pin with Different
Modulations @ 1900 MHz[1]
RMSB vs. Pin with Different
Modulations @ 1900 MHz[1]
3
3
1.5
1.5
1
1
0.5
0.5
0
0
-70
Ideal
CW
WCDMA 4 Carrier
WCDMA 1 Carrier
CDMA2000
LTEDW
2
RMSB (V)
2
RMSA (V)
2.5
Ideal
CW
WCDMA4 Carrier
WCDMA1 Carrier
CDMA2000
LTEDW
-60
-50
-40
-30
-20
-10
0
-70
10
-60
-50
-20
-10
0
10
0
10
RMSB Error vs. Pin with Different
Modulations @ 1900 MHz[1]
RMSA Error vs. Pin with Different
Modulations @ 1900 MHz[1]
4
4
CW
WCDMA 4 Carrier
WCDMA 1 Carrier
CDMA2000
LTEDW
2
1
CW
WCDMA 4 Carrier
WCDMA 1 Carrier
CDMA2000
LTEDW
3
2
ERROR (dB)
3
ERROR (dB)
-30
0
-1
1
0
-1
-2
-2
-3
-3
-4
-4
-60
-50
-40
-30
-20
11
INPUT POWER (dBm)
INPUT POWER (dBm)
-70
-40
-10
0
10
-70
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
INPUT POWER (dBm)
Electrical Specifications III ,
TA = +25 °C, VCCA = VCCB = VCCBS = 5V, Sci3 = Sci1 = 0V, Sci2 = 5V, Unless Otherwise Noted
Parameter
Conditions
Min.
Typ.
Max.
power detectors - SMT
2.5
Units
Single-Ended Input Configuration
Input Network Return Loss
Input Resistance between INPA and INNA
Input Resistance between INPB and INNB
Input Voltage Range
up to 4 GHz
> 15
dB
Between pins 2 and 3
110
Ohm
Between pins 6 and 7
110
Ohm
VDIFFINA = VINPA - VINNA and
VDIFFINB = VINPB -VINNB
2.25
V
RMS [A,B] Output
Output Voltage Range
0.1 to 3
V
Open-loop Output Voltage Range
RMS-VSET disconnected for control
applications
0.4 to
Vcc-1
V
Source/Sink Current Compliance
Measured with 0.9GHz input RF signal at
-25 dBm power
8/1.98
mA
Sci3=Sci2=Sci1=0V, Cofs=1nF
33 / 1.5
10 V/sec
Output Slew Rate (rise/fall)
6
[1] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 4
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Electrical Specifications III (continued),
TA = +25 °C, VCCA = VCCB = VCCBS = 5V, Sci3 = Sci1 = 0V, Sci2 = 5V, Unless Otherwise Noted
Parameter
Conditions
Min.
Typ.
Max.
Units
ET [A, B] Outputs
Modulation Bandwidth
100
MHz
Output Voltage Range
1 to 2.1
V
Source/Sink Current Compliance
Measured with 0.9 GHz input RF signal
at -18 dBm power
8 / 2.95
Output Slew Rate (rise/fall)
mA
6
83.3 / 250
10 V/sec
0.13 to 2.7
V
1
kOhm
VSET [A,B] Outputs
11
For control applications with nominal
slope/intercept settings
Input Voltage Range [1]
Input Resistance
OUTP and OUTN Outputs
RL=1k Ohm, CL=4.7pF [1]
1 to 3.9
V
Open-loop Output Voltage Range
OUTP-FBKA and OUTN-FBKB
disconnected for control applications
0.1 to
Vcc-0.9
V
Source/Sink Current Compliance
Measured with 0.9 GHz input RF signal
at -30 dBm power
8 / 2.2
mA
Power Detectors - SMT
Output Voltage Range
VLVL , Common Mode Reference Level for OUT[P,N]
Voltage Range
OUT[P,N]=FBK[A,B]
0
Input Resistance
5
6
V
kOhm
VREF2 , Voltage Reference Output
Output Voltage
2.43
V
Temperature Sensitivity
0.15
mV/°C
5.5 / 2.6
mA
Source/Sink Current Compliance
TEMP, Temperature Sensor Output
Output Voltage
measured at 0°C
Temperature Sensitivity
Source/Sink Current Compliance
0.6
V
2.2
mV/°C
1.7 / 0.5
mA
SCI1-3 Inputs, ENX Logic Input, Power Down Control
Input High Voltage
V
0.7xVCC
Input Low Voltage
0.3xVCC
Input Capacitance
0.5
V
pF
Power Supply
Supply Voltage
4.5
5
5.5
V
120.6 mA nominal at -40°C;
159.5 mA nominal at 85°C
143
mA
128 mA nominal at -40°C;
168.2 mA nominal at 85°C
151.7
mA
Supply Current with 0 dBm at both channels
160
mA
Standby Mode Supply Current
13
mA
Supply Current with no input power
Supply Current with 0 dBm at one channel
[1] For nominal slope/intercept setting, please see application section to change this range
11 - 5
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA & Error vs. Pin @ 100 MHz [1]
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
Ideal
RMSA +25C
RMSA +85C
RMSA -40C
ERR +25C
ERR +85C
ERR -40C
0.4
0
-70
-60
-50
-40
-30
-20
-10
0
-2
0.8
-3
0.4
-4
0
10
-70
-2
-4
-60
-50
-40
-30
-20
-10
0
10
RMSB & Error vs. Pin @ 900 MHz [1]
3
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
0.8
-2
0.8
-3
0.4
-4
0
ERR +25C
ERR +85C
ERR -40C
2.4
0.4
0
-70
-60
-50
-40
-30
-20
-10
0
10
-70
4
3
ERR +25C
ERR +85C
ERR - 40C
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
-2
-3
-4
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 1900 MHz [1]
RMSB & Error vs. Pin @ 1900 MHz [1]
3.2
3
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
ERR +25C
ERR +85C
ERR -40C
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
0.4
0
-70
-60
-50
-40
-30
-20
INPUT POWER (dBm)
-10
0
-2
0.8
-3
0.4
-4
0
10
-70
4
3
ERR +25C
ERR +85C
ERR -40C
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
ERROR (dB)
0.8
RMSB (V)
4
2.8
ERROR (dB)
3.2
2.4
ERROR (dB)
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
RMSB (V)
3.2
ERROR (dB)
4
3.2
2.8
11
-3
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 900 MHz [1]
RMSA (V)
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
INPUT POWER (dBm)
RMSA (V)
3
ERR +25C
ERR +85C
ERR -40C
ERROR (dB)
0.8
4
power detectors - SMT
2.4
RMSB (V)
3.2
3
2.8
ERROR (dB)
4
3.2
RMSA (V)
RMSB & Error vs. Pin @ 100 MHz [1]
-2
-3
-4
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 6
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA & Error vs. Pin @ 2200 MHz [1]
3.2
3
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
ERR +25C
ERR +85C
ERR -40C
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
0.4
0
-70
-60
-50
-40
-30
-20
-10
0
-2
0.8
-3
0.4
-4
0
-70
10
-3
-4
-60
-50
-40
-30
-20
-10
0
10
RMSB & Error vs. Pin @ 2700 MHz [1]
3
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
0.8
-2
0.8
-3
0.4
-4
0
2.8
ERR +25C
ERR +85C
ERR -40C
2.4
0.4
0
-70
-60
-50
-40
-30
-20
-10
0
10
-70
4
3
ERR +25C
ERR +85C
ERR -40C
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
-2
-3
-4
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 3500 MHz [1]
RMSB & Error vs. Pin @ 3500 MHz [1]
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
2.4
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
0.4
0
-70
-60
-50
-40
-30
-20
INPUT POWER (dBm)
-10
0
-2
0.8
-3
0.4
-4
0
10
-70
4
ERR +25C
ERR +85C
ERR -40C
3
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
-2
-3
-4
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
11 - 7
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
ERROR (dB)
0.8
RMSB (V)
3.2
3
ERR +25C
ERR +85C
ERR -40C
ERROR (dB)
4
3.2
2.8
ERROR (dB)
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
RMSB (V)
3.2
ERROR (dB)
4
3.2
RMSA (V)
-2
INPUT POWER (dBm)
RMSA & Error vs. Pin @ 2700 MHz [1]
RMSA (V)
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
INPUT POWER (dBm)
Power Detectors - SMT
3
ERR +25C
ERR +85C
ERR -40C
ERROR (dB)
0.8
RMSB (V)
4
2.8
ERROR (dB)
RMSA (V)
4
3.2
2.4
11
RMSB & Error vs. Pin @ 2200 MHz [1]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA & Error vs. Pin @ 3900 MHz [1]
3.2
3
2.8
2
2.4
2
1
2
1
1.6
0
1.6
0
1.2
-1
1.2
-1
ERR +25C
ERR +85C
ERR -40C
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
0
-70
-60
-50
-40
-30
-20
-10
0
0.8
-3
0.4
-4
0
10
-70
2
Ideal
LOGOUT +25C
LOGOUT +85C
LOGOUT -40C
-2
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
OUT [P,N] & Error vs. Pin @ 100 MHz [1] [2]
OUT [P,N] & Error vs. Pin @ 900 MHz [1] [2]
4
4
4
3
2
3
2
2
0
2
0
4
OUTP
OUTN
-70
-60
-50
-40
-30
-20
-10
0
-2
1
-4
0
-70
10
OUTP
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
ERROR (dB)
0
ERROR (dB)
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
1
OUT[P,N] (V)
OUTN
11
-3
-4
-60
INPUT POWER (dBm)
OUT[P,N] (V)
3
-2
-4
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
INPUT POWER (dBm)
OUT [P,N] & Error vs. Pin @ 1900 MHz [1][2]
OUT [P,N] & Error vs. Pin @ 2200 MHz [1][2]
4
4
3
2
3
2
2
0
2
0
4
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
0
-2
1
-4
0
10
-70
OUTP
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
ERROR (dB)
0
OUT[P,N] (V)
OUTN
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
1
-70
4
OUTP
ERROR (dB)
OUT[P,N] (V)
OUTN
power detectors - SMT
0.4
-2
4
ERR +25C
ERR +85C
ERR -40C
ERROR (dB)
0.8
RMSB (V)
4
2.8
ERROR (dB)
3.2
2.4
RMSA (V)
RMSB & Error vs. Pin @ 3900 MHz [1]
-2
-4
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
[2] INPA Power Swept, INPB Fixed Power @ -25 dBm
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 8
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
OUT [P,N] & Error vs. Pin @ 2700 MHz [1][2]
4
3
2
3
2
0
OUT[P,N] (V)
0
-50
-40
-30
-20
-10
0
2
0
OUTP
1
-4
0
10
OUTN
2
-2
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
-2
-4
-70
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
OUT [P,N] & Error vs. Pin @ 3900 MHz [1][2]
RMSA Intercept vs. Frequency [1]
-40
4
4
OUTN
OUT[P,N] (V)
3
2
0
2
OUTP
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
1
-2
INTERCEPT (dBm)
-45
ERROR (dB)
Power Detectors - SMT
-60
ERROR (dB)
OUTP Err +25C
OUTP Err +85C
OUTP Err -40C
OUTN Err +25C
OUTN Err +85C
OUTN Err -40C
1
OUT[P,N] (V)
OUTP
OUTN
-70
4
-70
-60
-50
-40
-30
-20
-10
-50
+25C
+85C
-40C
-55
-60
-65
-70
-75
-4
0
0
-80
10
0
1000
RMSB Intercept vs. Frequency [1]
3000
4000
3000
4000
RMSA Slope vs. Frequency [1]
60
-45
55
-50
+25C
+85C
-40C
-55
SLOPE (mV/dB)
INTERCEPT (dBm)
2000
FREQUENCY (MHz)
INPUT POWER (dBm)
-40
-60
-65
+25C
+85C
-40C
50
45
40
-70
35
-75
-80
0
1000
2000
3000
FREQUENCY (MHz)
4000
30
0
1000
2000
FREQUENCY (MHz)
[1] WCDMA Input Waveform
[2] INPA Power Swept, INPB Fixed Power @ -25 dBm
11 - 9
ERROR (dB)
4
4
11
OUT [P,N] & Error vs. Pin @ 3500 MHz[1][2]
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA vs. Pin with WCDMA 4 Carrier
@ +25­°C [1] [2]
60
3
55
2.5
+25C
+85C
-40C
50
45
40
11
0.5
1000
2000
3000
0
-70
4000
-60
-50
-40
-30
-20
RMSB vs. Pin with WCDMA 4 Carrier
@ +25­°C [1] [2]
3
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
2
ERROR (dB)
2
1.5
1
1
0
-1
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-2
0.5
-3
-60
-50
-40
-30
-20
-10
0
-4
-70
10
-60
-50
RMSB Error vs. Pin with WCDMA 4
Carrier @ +25­°C [1] [2]
3
3
2
2
ERROR (dB)
4
1
0
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-2
-3
-60
-50
-40
-30
-20
-30
-20
-10
0
10
RMSA Error vs. Pin with WCDMA 4 Carrier
@ +85­°C wrt +25­°C Response [1] [2]
4
-1
-40
INPUT POWER (dBm)
INPUT POWER (dBm)
ERROR (dB)
10
4
2.5
-4
-70
0
RMSA Error vs. Pin with WCDMA 4 Carrier
@ +25­°C [1] [2]
3
0
-70
-10
INPUT POWER (dBm)
-10
INPUT POWER (dBm)
0
power detectors - SMT
0
FREQUENCY (MHz)
RMSB (V)
1.5
1
35
30
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
2
RMSA (V)
SLOPE (mV/dB)
RMSB Slope vs. Frequency [1]
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
1
0
-1
-2
-3
10
-4
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
[2] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 10
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSB Error vs. Pin with WCDMA 4
Carrier @ +85­°C wrt +25­°C Response [1] [2]
RMSA Error vs. Pin with WCDMA 4
Carrier @ -40­°C wrt +25­°C Response [1] [2]
4
4
3
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
0
-1
1
0
-1
-2
-2
-3
-3
-4
-70
-60
-50
-40
-30
-20
-10
0
-4
-70
10
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-60
-50
INPUT POWER (dBm)
-20
0
10
[1] [2]
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
2.5
2
2
RMSA (V)
1
0
-1
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-2
-3
-60
-50
-40
1.5
1
0.5
-30
-20
-10
0
0
-70
10
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
RMSB vs. Pin with CW @ +25­°C
[1] [2]
RMSA Error vs. Pin with CW @ +25­°C [1] [2]
3
4
3
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
2
2
ERROR (dB)
2.5
1.5
1
1
0
-1
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-2
0.5
0
-70
-10
3
3
RMSB (V)
-30
RMSA vs. Pin with CW @ +25­°C
4
-4
-70
-40
INPUT POWER (dBm)
RMSB Error vs. Pin with WCDMA 4
Carrier @ -40­°C wrt +25­°C Response [1] [2]
ERROR (dB)
Power Detectors - SMT
11
1
2
ERROR (dB)
ERROR (dB)
2
3
-3
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
0
10
-4
-70
-60
-50
-40
-30
-20
-10
0
INPUT POWER (dBm)
[1] WCDMA Input Waveform
[2] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
11 - 11
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSB Error vs. Pin with CW @ +25­°C [1] [2]
RMSA vs. Pin w/ CW & WCDMA 4
Carrier @ 1900 MHz & +25­°C [1] [2]
4
3
3
2.5
0
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-2
-3
-60
-50
-40
-30
-20
1.5
1
11
0.5
-10
0
0
-70
10
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
RMSB vs. Pin w/ CW & WCDMA 4
Carrier @ 1900 MHz & +25­°C [1] [2]
RMSA Reading Error for WCDMA wrt CW
Response @ +25­°C [1] [2]
3
1
0.8
2.5
0.6
ERROR (dB)
RMSB (V)
0.4
CW
WCDMA
2
1.5
1
0.2
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
0.5
-0.8
0
-70
-60
-50
-40
-30
-20
-10
0
-1
-70
10
-60
-50
INPUT POWER (dBm)
-40
-30
-20
-10
0
10
0
10
INPUT POWER (dBm)
RMSB Reading Error for WCDMA wrt CW
Response @ +25­°C [1] [2]
RMSA vs. Pin w/ CW & WCDMA 4
Carrier @ 1900MHz & +85­°C [1] [2]
power detectors - SMT
-1
-4
-70
CW
WCDMA
2
1
RMSA (V)
ERROR (dB)
2
3
1
0.8
2.5
0.6
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
-0.8
-1
-70
CW
WCDMA
2
0.2
RMSA (V)
ERROR (dB)
0.4
-60
-50
-40
-30
-20
1.5
1
0.5
-10
INPUT POWER (dBm)
0
10
0
-70
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
[2] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 12
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA Reading Error for WCDMA wrt CW
Response @ +85­°C [1] [2]
RMSB vs. Pin w/ CW & WCDMA 4
Carrier @ 1900 MHz & +85­°C [1] [2]
3
1
0.8
2.5
0.6
ERROR (dB)
RMSB(V)
0.4
CW
WCDMA
2
1.5
1
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
0.5
-0.8
0
-70
-60
-50
-40
-30
-20
-10
0
-1
-70
10
-60
-50
-40
-30
-20
-10
0
10
0
10
INPUT POWER (dBm)
INPUT POWER (dBm)
RMSB Reading Error for WCDMA wrt CW
Response @ +85­°C [1] [2]
RMSA vs. Pin w/ CW & WCDMA 4
Carrier @ 1900 MHz & -40­°C [1] [2]
3
1
0.8
2.5
0.6
0.4
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
-0.8
-1
-70
CW
WCDMA
2
0.2
RMSA (V)
ERROR (dB)
Power Detectors - SMT
11
0.2
-60
-50
-40
-30
-20
1.5
1
0.5
-10
0
0
-70
10
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
INPUT POWER (dBm)
RMSB vs. Pin w/ CW & WCDMA 4
Carrier @ 1900 MHz & -40­°C [1] [2]
RMSA Reading Error for WCDMA wrt CW
Response @ -40­°C [1] [2]
3
1
0.8
2.5
0.6
ERROR (dB)
RMSB (V)
0.4
CW
WCDMA
2
1.5
1
0.2
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
0.5
-0.8
0
-70
-60
-50
-40
-30
-20
-10
INPUT POWER (dBm)
0
10
-1
-70
-60
-50
-40
-30
-20
-10
0
INPUT POWER (dBm)
[1] WCDMA Input Waveform
[2] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
11 - 13
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSB Reading Error for WCDMA wrt CW
Response @ -40­°C [1] [2]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 100 MHz [2] [3]
60
1
0.8
40
ERROR (dB)
0.4
0.2
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
-0.8
-1
-70
-60
-50
-40
-30
-20
+25C
+85C
-40C
20
0
-20
11
-40
-10
0
-60
-50
10
-40
INPUT POWER (dBm)
40
+25C
+85C
-40C
RMSA-RMSB (mV)
RMSA-RMSB (mV)
0
10
60
40
20
0
-20
-40
+25C
+85C
-40C
20
0
-20
-40
-40
-30
-20
-10
0
-60
-50
10
-40
INPUT POWER (dBm)
-30
-20
-10
0
10
INPUT POWER (dBm)
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 2200 MHz [2] [3]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 2700 MHz [2] [3]
60
60
40
40
+25C
+85C
-40C
RMSA-RMSB (mV)
RMSA-RMSB (mV)
-10
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 1900 MHz [2] [3]
60
20
0
-20
-40
-60
-50
-20
INPUT POWER (dBm)
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 900 MHz [2] [3]
-60
-50
-30
power detectors - SMT
RMSA-RMSB (mV)
0.6
+25C
+85C
-40C
20
0
-20
-40
-40
-30
-20
-10
INPUT POWER (dBm)
[1] WCDMA Input Waveform
0
10
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
[2] SCA1=SCA3=SCB1=SCB3=0V, SCA2=SCB2=5V
[3] CW Input Waveform, RMSA Referenced
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 14
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 3500 MHz [1] [2]
RMSA-RMSB, Channel Matching vs. Pin
over Temperature @ 3900 MHz [1] [2]
120
120
11
80
+25C
+85C
-40C
RMSA-RMSB (mV)
RMSA-RMSB (mV)
80
40
0
-40
-80
+25C
+85C
-40C
40
0
-40
-80
-120
-50
-40
-30
-20
-10
0
10
-120
-50
-40
-30
0.1 GHz
0.9 GHz
1.9 GHz
2.2 GHz
2.7 GHz
3.5 GHz
3.9 GHz
10
3
4
Channel B fixed at
-45dBm for f<3 GHz
-40dBm for f>3 GHz
3
2
1
1
0
0
-1
-30
-25
-20
0.1 GHz
0.9 GHz
1.9 GHz
2.2 GHz
2.7 GHz
3.5 GHz
3.9 GHz
5
ERROR (dB)
4
-15
-10
-5
0
5
Channel A fixed at
-45dBm for f<3 GHz
-40dBm for f>3 GHz
-1
-30
10
-25
-20
-15
INPUT POWER (dBm)
25
20
RF
OFF
RF
ON
0
-5
0
1
2
3
4
5
TIME (us)
6
7
10
8
9
10
20
15
2
10
1.5
RF ENABLE
5
1
RF
OFF
0.5
RF
OFF
RF
ON
0
-5
0
0
5
10
15
20
25
30
35
TIME (ms)
[1] CW Input Waveform
[2] RMSA referenced
11 - 15
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
RF ENABLE VOLTAGE (V)
5
1
-20 dBm
0 dBm
2.5
RF ENABLE VOLTAGE (V)
10
RF ENABLE
0.5
5
25
MSOUT
15
2
RF
OFF
0
3
RMSOUT (V)
-20 dBm
0 dBm
MSOUT
1.5
-5
RMS [A, B] Output Response
with SCI = 111 @ 1900 MHz
3
2.5
-10
INPUT POWER (dBm)
RMS [A, B] Output Response
with SCI = 000 @ 1900 MHz
RMSOUT (V)
0
6
5
0
-10
Interference to an Input Signal (INA
Power Fixed) with Interfering Signal on
the other Channel (INB Power Swept) [1]
6
2
-20
INPUT POWER (dBm)
Interference to an Input Signal (INB
Power Fixed) with Interfering Signal on
the other Channel (INA Power Swept) [1]
ERROR (dB)
Power Detectors - SMT
INPUT POWER (dBm)
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Input Return Loss vs. Frequency
180
0
170
-5
160
-10
RETURN LOSS (dB)
150
140
130
120
+25C
+85C
-40C
110
100
-70
-60
-50
-40
-30
-20
-10
0
-15
-20
-25
-30
-35
-40
10
0
1
2
INPUT POWER (dBm)
3
4
5
100000
1800
Ripple with WCDMA1
Ripple with WCDMA4
Ripple with 8 Tone (1kHz seperation)
Ripple with 8 Tone (10kHz seperation)
1500
10000
Rise Time & Fall Time (us)
Output Ripple Peak-Peak (mV)
11
FREQUENCY (GHz)
Output Ripple & Rise/Fall Time
vs. Integration
Setting[Sci4,Sci3,Sci2,Sci1] in Decimal
1200
1000
900
100
600
10
300
1
0.1
0
0
6
1
2
3
4
5
6
7
Integration Setting (in Decimal)
power detectors - SMT
SUPPLY CURRENT (mA)
Typical Supply Current vs. Pin, Vcc=5V [1]
[1] CW Input Waveform
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 16
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
2.5
2
2
1.5
+25C
+85C
-40C
1
11
ETB vs. Pin with CW @ 900 MHz
2.5
ETB (V)
ETA (V)
ETA vs. Pin with CW @ 900 MHz
0.5
0
0.05
0.1
1.5
+25C
+85C
-40C
1
0.15
0.5
0.2
0
0.05
4
+25C
+85C
-40C
0
-2
0.01
+25C
+85C
-40C
1
2
0
0.1
-2
0.01
Error +25C
Error +85C
Error -40C
Error +25C
Error +85C
Error -40C
-4
0.001
-35
-30
-25
-20
-15
-10
-4
0.001
-5
-40
-35
-30
INPUT POWER (dBm)
2
2
ETB (V)
ETA (V)
2.5
1.5
+25C
+85C
-40C
0.05
0.1
-20
-15
-10
-5
ETB vs. Pin with CW @ 1900 MHz
2.5
0
-25
INPUT POWER (dBm)
ETA vs. Pin with CW @ 1900 MHz
0.5
4
10
2
0.1
-40
0.2
ERROR (dB)
Normalized ETA (V)
10
1
0.15
INPUT VOLTAGE (Vp-p)
11 - 17
0.15
ETB & ETB Error vs. Pin with CW @
900 MHz
Normalized ETB (V)
ETA & ETA Error vs. Pin with CW @
900 MHz
1
0.1
INPUT VOLTAGE (Vp-p)
ERROR (dB)
Power Detectors - SMT
INPUT VOLTAGE (Vp-p)
1.5
+25C
+85C
-40C
1
0.2
0.5
0
0.05
0.1
0.15
0.2
INPUT VOLTAGE (Vp-p)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
2
-2
0.01
+25C
+85C
-40C
1
2
0
0.1
-2
0.01
-4
0.001
-35
-30
-25
-20
-15
-10
-4
0.001
-40
-5
-35
-30
2.5
2
2
1.5
1
0.1
0.15
0
0.05
0.15
4
+25C
+85C
-40C
Normalized ETB (V)
-2
0.01
+25C
+85C
-40C
1
2
0
0.1
-2
0.01
Error +25C
Error +85C
Error -40C
Error +25C
Error +85C
Error -40C
-4
0.001
-25
-20
INPUT POWER (dBm)
-15
-10
ERROR (dB)
0
4
10
2
0.1
-30
0.2
ETB & ETB Error vs. Pin with CW @
3500 MHz
ERROR (dB)
Normalized ETA (V)
0.1
INPUT VOLTAGE (Vp-p)
10
-35
-5
+25C
+85C
-40C
0.5
0.2
ETA & ETA Error vs. Pin with CW @
3500 MHz
-40
-10
1.5
INPUT VOLTAGE (Vp-p)
1
-15
1
+25C
+85C
-40C
0.05
-20
ETB vs. Pin with CW @ 3500 MHz
2.5
ETB (V)
ETA (V)
ETA vs. Pin with CW @ 3500 MHz
0
-25
INPUT POWER (dBm)
INPUT POWER (dBm)
0.5
11
Error +25C
Error +85C
Error -40C
Error +25C
Error +85C
Error -40C
-40
ERROR (dB)
0
0.1
ERROR (dB)
Normalized ETA (V)
+25C
+85C
-40C
4
10
power detectors - SMT
4
10
1
ETB & ETB Error vs. Pin with CW @
1900 MHz
Normalized ETB (V)
ETA & ETA Error vs. Pin with CW @
1900 MHz
-5
-4
0.001
-40
-35
-30
-25
-20
-15
-10
-5
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 18
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
11
ETB Intercept vs. Frequency with CW
-50
-50
-60
-60
-70
-70
INTERCEPT (mV)
INTERCEPT (mV)
ETA Intercept vs. Frequency with CW
-80
-90
-100
+25C
+85C
-40C
-110
-120
0
1000
-80
-90
-100
+25C
+85C
-40C
-110
2000
3000
-120
4000
0
1000
16
16
+25C
+85C
-40C
SLOPE (V/V)
14
12
10
8
+25C
+85C
-40C
14
12
10
8
0
1000
2000
3000
6
4000
0
1000
FREQUENCY (MHz)
RF ENABLE
5
1
0.5
RF
OFF
0
-5
0
0
20
40
60
80
TIME (ns)
100
120
140
20
ETB
15
2
10
1.5
RF ENABLE
5
1
RF
OFF
0.5
RF
OFF
RF
ON
0
-5
0
0
20
40
60
80
100
120
140
TIME (ns)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
RF ENABLE VOLTAGE (V)
10
1.5
RF ENABLE VOLTAGE (V)
15
2
25
-10 dBm
-20 dBm
2.5
20
ETA
RF
ON
4000
3
ETB (V)
-10 dBm
-20 dBm
RF
OFF
3000
ETB Output Response @ 1900 MHz
25
2.5
2000
FREQUENCY (MHz)
ETA Output Response @ 1900 MHz
ETA (V)
4000
18
3
11 - 19
3000
ETB Slope vs. Frequency with CW
18
6
2000
FREQUENCY (MHz)
ETA Slope vs. Frequency with CW
SLOPE (V/V)
Power Detectors - SMT
FREQUENCY (MHz)
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Absolute Maximum Ratings
5.6V
Single-Ended RF Input Power
10 dBm
Input Voltage
VCC + 0.6V
Channel / Junction Temperature
125°C
Continuous Pdiss (T = 85°C)
(Derate 55.29 mW/°C above 85°C)
2.21 Watts
Thermal Resistance (Rth)
(junction to ground paddle)
18.09 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1B
11
power detectors - SMT
Supply Voltage
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
Outline Drawing
Package Information
Part Number
Package Body Material
Lead Finish
HMC1030LP5E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL Rating
MSL1
[1]
Package Marking [2]
H1030
XXXX
[1] Max peak reflow temperature of 260 °C
[2] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 20
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Pin Descriptions
Pin Number
Function
Description
1, 8, 9, 10, 31,32
SCA1, SCB1,
SCB2, SCB3,
SCA3, SCA2
Digital input pins that control the internal
integration time constant for mean square
calculation. SCA(B)3 is the most significant bit.
Set V>0.2xVcc to disable. Shortest integration
time is for SCA(B)=000, longest integration time is
for SCA(B)=111. Each step changes the integration
time by 1 octave.
2, 3
INNA, INPA
Interface Schematic
Power Detectors - SMT
11
11 - 21
RF Input Pins.
6, 7
INPB, INNB
4, 25
ENX, ENOUT
Disable pin. Connect to GND for normal
operation. Applying voltage V > 0.8 Vcc
will initiate power saving mode.
5, 11, 30
VCCBS,
VCCB,
VCCA
Bias Supply. Connect supply voltage to these pins
with appropriate filtering.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Pin Descriptions (Continued)
Pin Number
Function
Description
12, 13, 28, 29
COPB,
CONB,
CONA,
COPA
Input high pass filter capacitor. Connect
a capacitor between COPA(CONA) and
COPB(CONB) to determine 3 dB point of input
signal high-pass filter.
Interface Schematic
14, 27
ETB, ETA
Linear output that provides an indication of
envelope of the input signal.
15
VREF2
2.5V Reference voltage output.
16
VLVL
Reference level input for OUTP and OUTN.
Connect to VREF for normal operation.
17, 24
VSETB,
VSETA
VSET inputs. Set point inputs for controller mode.
18, 23
RMSB,
RMSA
Logarithmic outputs that convert the input power
to a DC level for channel A and channel B.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
power detectors - SMT
11
11 - 22
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Pin Descriptions (Continued)
Pin Number
Function
Description
FBKB
Feedback through 3.5k Ohm to the negative
terminal of the integrated Op Amp driving OUTN
OUTN
Output providing the difference of RMS outputs
using an Op Amp. For normal operation,
connected to FBKB to provide the function:
OUTN = RMSB - RMSA + VLVL
21
OUTP
Output providing the difference of RMS outputs
using an Op Amp. For normal operation,
connected to FBKA to provide the function:
OUTP = RMSA - RMSB + VLVL
22
FBKA
Feedback through 3.5K Ohms to the negative
terminal of the integrated Op Amp driving OUTP
26
TEMP
Temperature sensor output. See Application Note
section.
GND
Package bottom has an exposed metal paddle
that must be connected to RF/DC ground.
19
20
Power Detectors - SMT
11
11 - 23
Interface Schematic
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Evaluation PCB - Wideband Single-Ended
List of Materials for Evaluation PCB EVAL01-HMC1030LP5E[1]
Item
Description
Item
Description
J1, J4, J8, J12,
J13, J14, J15, J18
SMA Connector
U1
HMC1030LP5E Single-Ended
Dual RMS Power Detector
J19, TP2, TP3, TP5, TP6,
TP7, TP9, TP10, TP11, TP16,
TP17
DC Pin
PCB [2]
600-00049-00-1 Evaluation PCB
C1, C2, C5, C6, C9, C15,
C16, C21
1 nF Capacitor, 0402 Pkg.
C12, C13, C14, C17, C18,
C19
10 pF Capacitor, 0402 Pkg.
C7, C10, C11, C20, C22, C23
100 pF Capacitor, 0402 Pkg.
C8
100 nF Capacitor, 0402 Pkg.
R2, R8
49.9 Ohm Resistor, 0402 Pkg.
R1, R3, R5, R7, R9, R11
68.1 Ohm Resistor, 0402 Pkg.
R18, R30
560 Ohm Resistor, 0402 Pkg.
R22, R23, R27, R28, R31
1K Ohm Resistor, 0402 Pkg.
R6, R12-14,R35-39
10K Ohm Resistor, 0402 Pkg.
R15, R17, R32, R34
39K Ohm Resistor, 0402 Pkg.
R24, R21, R24, R29
100K Ohm Resistor, 0402 Pkg.
R4, R10,R16, R20,R25-26,
R33
0 Ohm Resistor, 0402 Pkg.
power detectors - SMT
11
The circuit board used in the final application should
use RF circuit design techniques. Signal lines should
have 50 Ohm impedance while the package ground
leads and exposed paddle should be connected
directly to the ground plane similar to that shown. A
sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon
request.
[1] Reference this number when ordering complete evaluation PCB
[2] Circuit Board Material: Rogers 4350 or Arlon 25FR
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 24
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Application Circuit - Wideband Single-Ended
Power Detectors - SMT
11
11 - 25
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Application Information
Principle of Operation
The HMC1030LP5E is a dual-channel RMS and Envelope detector in a single package. The HMC1030LP5E’s RMS
detector core is designed to measure the actual RMS power of the input signal, independent of the modulated signal
waveform complexity or the modulation scheme. The RMS detector core architecture of HMC1030LP5E is composed
of a full-wave rectifier, log/antilog circuit, and an integrator as shown above. The RMS output signal is directly
proportional to the logarithm of the time-average of VIN2. The bias block also contains temperature compensation
circuits which stabilize output accuracy over the entire operating temperature range. The DC offset cancellation circuit
actively cancels internal offsets so that even very small input signal levels can be measured accurately.
The HMC1030LP5E supports controller mode operation. For more information regarding controller mode operation,
please contact Hittite application support.
The HMC1030LP5E achieves exceptional RF power measurement accuracy independent of the modulation of the
carrier with this system architecture. The relation between the HMC1030LP5E’s RMSOUT output and the RF input
power is given below
VRMSOUT =
1
ln(ßkG2∫VIN2dt)
k
VRMSA vs. PIN with WCDMA 4 Carrier
@ 1900 MHz
3
Pin = VRMS/[log-slope]+[log-intercept], dBm
RMSOUT (V)
2.5
Where ß is op-amp gain set via resistors on the Vset pin.
power detectors - SMT
11
Ideal
Measured
2
1.5
1
0.5
0
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 26
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
HMC1030LP5E’s envelope detector core is capable of extracting the envelope information of the modulated RF signal
with modulation bandwidths in excess of 100 MHz. The extracted envelope information is independent of the average
power and the crest factor of the RF signal. The RMS detector core provides a linear-in-dB output of the average RF
power, whereas the envelope detector core provides a linear representation of the instantaneous envelope waveform.
The envelope detection feature may be used in ultra-fast excessive RF power protection systems, PA linearization
techniques and in efficiency enhancing Envelope-Tracking PA implementations.
VRMSA & VETA & WCDMA 4 Carrier with
-20dBm RF Input vs. Time @ 900 MHz
11
ETOUT
RMSOUT
VET, RMS (V)
1.86
60
1.55
40
1.24
20
0.93
0
0.62
-20
0.31
-40
RF Input (mV)
Power Detectors - SMT
80
2.17
-60
0
RF Input
-80
-0.31
0
200
400
600
800
1000
Time (ns)
Measuring the ETOUT and RMS output voltage signals simultaneously provides a very informative picture of the
RF input signal such as, peak power, average power, peak-to-average power, and RF wave-shape. Simultaneous
measurement of instantaneous signal power and average power is essential for taking full advantage of a receive
signal chain’s available dynamic range, while avoiding saturation, or to maximize transmitter efficiency.
Configuration for the Typical Application
The HMC1030LP5E requires a single 5V supply with an adequate power supply decoupling as recommended in the
application schematic.
Inputs of the HMC1030LP5E are broadband matched to 50 Ohm single-ended with details included in the subsequent
“Broadband Single-Ended Input Interface” section.
The RMSA & RMSB outputs are typically connected to VSETA & VSETB inputs through a resistive network, resulting
in a Pin VRMS transfer characteristic with a slope of 37 mV/dBm (at 1900 MHz) for both channels. However, the RMS
outputs can be re-scaled to “magnify” a specific portion of the input sensing range, and to fully utilize the dynamic
range of the RMS outputs. Refer to the section under the “Log-Slope and Intercept” section for details.
The OUTP & OUTN outputs provide the input signal power ratio between the two power detection channels. The
OUTP & OUTN outputs are typically connected to FBKA & FBKB. An input voltage applied to the VLVL input pin is
used to set the common mode voltage reference level for the OUTP & OUTN. The VLVL pin is typically connected
to VREF2 output to provide a nominal bias voltage of 2.5V. Optionally, external bias voltage may be applied to VLVL.
Refer to the section under the “Channel Difference Outputs” for details.
The ETA & ETB outputs provide linearly scaled replica of the instantaneous envelope of the modulated RF signal
with modulation bandwidths up to 150 MHz for both channels. For optimum performance, the ET outputs of the
HMC1030LP5E should be terminated to ground with a 560 Ohm load resistor. Refer to the section under the “Envelope
Detector Output” for details.
11 - 27
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
The SCA1-3 & SCB1-3 inputs are configured digitally to set the integration bandwidth of the RMS detectors for both
channels. Refer to the section under the “RMS Output Interface and Transient Response” section for details.
The COFAP-N & COFBP-N inputs determine the 3dB bandwidth of the input high pass filter for both channels. Typically
1nF external high pass filter capacitors are connected between COFAP & COFAN and between COFBP & COFBN for
a banwdith of 62 kHz.
The ENX input is the enable pin of the device. The ENOUT input is the enable pin of the integrated OpAmps driving
RMSA & RMSB. Both ENX and ENOUT are enable high.
Broadband Single-Ended Input Interface
The HMC1030LP5E inputs are broadband matched to single-ended 50 Ohm with the configuration shown below.
The interface and requires only two external DC blocking capacitors and an external 50 Ohm resistor over the entire
frequency band of operation.
The integrated broadband single-ended input interface of HMC1030LP5E eliminates the requirement for an external
balun transformer or matching network and provides a compact, broadband solution.
Note that the provided single-ended input interface
covers the whole operating spectrum of the
HMC1030LP5E and does not require matching
tuning for different frequencies. The performance of
the HMC1030LP5E at different frequencies is shown
below:
11
power detectors - SMT
Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy
absolute accuracy requirements: refer to the “System Calibration” section for more details.
VRMSA & Error vs. Pin
4
3.2
LOGOUT 100MHz
LOGOUT 900MHz
LOGOUT 1900MHz
LOGOUT 2200MHz
LOGOUT 2700MHz
LOGOUT 3500MHz
LOGOUT 3900MHz
2.8
2
2
1
0
1.6
1.2
ERR 100MHz
ERR 900MHz
ERR 1900MHz
ERR 2200MHz
ERR 2700MHz
ERR 3500MHz
ERR 3900MHz
0.8
0.4
-2
-3
-4
0
-70
-1
ERROR (dB)
RMSOUT (V)
2.4
3
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 28
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Dual RMS Detection Channels
The HMC1030LP5E integrates two HMC1021LP4E RMS detection channels with shared bias and control circuitry.
Proprietary design techniques enable extremely good matching between channels over a wide range of input
frequencies with low temperature drift.
Channel Matching
The HMC1030LP5E provides industry leading channel matching performance with the use of proprietary techniques.
The channel mismatch is typically less than 100 mV over the specified temperature and frequency range with the
integrated broadband single-ended input interface.
Channel Matching (RMSA-RMSB)
0.2
0.1 GHz
0.9 GHz
1.9 GHz
2.2 GHz
2.7 GHz
3.5GHz
3.9GHz
0.15
0.1
RMSA-RMSB (V)
Power Detectors - SMT
11
Part-to-part variations for single channel RMS detectors complicate simultaneous power readings. Simultaneous
signal power measurements are particularly useful for automatic gain/level control and VSWR measurements. When
separate power detectors are used, the lack of an accurate match between the power detectors result in measurement
errors. Calibration and compensation methods are required to counteract the differences between the separate power
detectors. The HMC1030LP5 dual RMS detector greatly simplifies that activity, and will reliably produce more accurate
measurements.
0.05
0
-0.05
-0.1
-0.15
-0.2
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Channel Isolation/Interference
Off-chip interference between channels should be minimized with good RF board design practices and the quality of
the soldered connections.
On-chip inter-channel interference, manifests itself as the variation on one detector output due to a relatively strong
signal present at the other detector input. Quantitatively, the input-output channel isolation is defined as the difference
between the input power levels at both channels when the interfering (higher power level) channel causes a 1 dB
measurement error in the victim channel. Worst case channel interference occurs when victim channel has an input
signal level just over its detection threshold.
Input-Output Channel isolation for HMC1030LP5E is:
55 dB input-output isolation at 0.9 GHz
49 dB input-output isolation up to 2.2 GHz
40 dB input-output isolation up to 3.9 GHz.
11 - 29
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
If the same input signal frequency is applied to both channels, the interference will occur as a phase delay.
A slight offset in signal frequency between the two channels can be seen as a ripple at the output of the channel with
the lower power level applied at its input. Peaks in the output ripple correspond to the worst-case phase shift for inputoutput interference. The frequency of the output ripple will be equal to the “beat” frequency between the two channels.
The magnitude of the output ripple will depend on the SCI (integration) settings and offset capacitors connected to
COFA & COFB pins, respectively. The output ripple is reduced by increasing the value of the SCI setting, thereby
decreasing the integrator bandwidth. The data was collected using a 1 kHz offset between the channels.
5
4
ERROR IN CHANNEL A (dB)
ERROR IN CHANNEL B (dB)
5
0.1 GHz
0.9 GHz
1.9 GHz
2.2 GHz
2.7 GHz
3.5GHz
3.9GHz
3
2
1
0
-30
11
Interference to an Input Signal (INA
Power Fixed) with Interfering Signal on
the other Channel (INB Power Swept)
4
0.1 GHz
0.9 GHz
1.9 GHz
2.2 GHz
2.7 GHz
3.5GHz
3.9GHz
3
2
1
0
-25
-20
-15
-10
-5
0
5
10
-30
-25
-20
INPUT POWER (dBm)
-15
-10
-5
0
5
10
INPUT POWER (dBm)
Envelope Detector Outputs
The HMC1030LP5E features envelope detection for both channels. The ETA & ETB outputs provide a linearly scaled
replica of the instantaneous envelope of the modulated RF signal for modulation bandwidths up to 150 MHz at for
both channels. For optimum performance, the ETA & ETB pins of the HMC1030LP5E should be terminated with a
560 Ohm load resistor to GND. Note that any capacitive loading on the ETA & ETB pins would reduce the modulation
bandwidth of the envelope detection. The envelope outputs have a conversion gain of 15V/V with an output voltage
ranging from 1.0V to 2.1V.
power detectors - SMT
Interference to an Input Signal (INB
Power Fixed) with Interfering Signal on
the other Channel (INA Power Swept)
ETA vs. Input Peak Voltage @ 900 MHz
2.5
ETOUT (V)
2
1.5
+25C
+85C
-40C
1
0.5
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
INPUT PEAK VOLTAGE (Vp-p)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 30
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
The waveform below shows the HMC1030LP5E’s envelope detector response to an RF input signal with a 100 MHz
modulation bandwidth.
ETOUT Response to an RF Input Signal
with 100 MHz Modulation Bandwidth
Power Detectors - SMT
11
Channel Difference Outputs
HMC1030LP5E features OUTP and OUTN “channel difference” outputs that can be used differentially or singleended. The OUTP and OUTN outputs provide direct read of input signal power ratio between the two channels. The
OUTP and OUTN are connected to FBKA and FBKB pins respectively. The OUTP and OUTN are defined with the
following equations:
OUTP = RMSA - RMSB + VLVL
OUTN = RMSB - RMSA + VLVL
Where, the VLVL is the common mode reference level applied at the VLVL pin. The VLVL pin can be connected to
VREF2 output to provide a nominal base voltage of 2.5V. Optionally; external bias voltage can be applied to VLVL.
Channel Difference Outputs @ 1900 MHz,
Channel A Power Swept,
Channel B @ -25 dBm, VLVL=2.5V
4
With the channels of HMC1030LP5E having very low
mismatch, and located on the same die, the channel
outputs RMSA and RMSB track very closely over
temperature. The difference operation also allows the
OUTP and OUTN to reject common-mode changes
in channels A and B.
OUTPUT (V)
3
2
OUTP
OUTN
1
0
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
11 - 31
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMS Output Interface and Transient Response
The HMC1030LP5E features digital input pins (SCI1-SCI3) that control the internal integration time of the RMS detector.
The RMS output transient response is determined by the digital integration controls, and output load conditions.
The SCI3 is the most significant bit, and the longest integration time is for SCI=111.
Excessive loading at the RMS output impacts the transient response. It is recommended to keep load resistance
above 500 Ohm.
For increased load drive capability, consider a buffer amplifier on the RMS output. Using an integrating amplifier on
the RMS output allows for an alternative treatment for faster settling times. An external amplifier optimized for transient
settling can also provide additional RMS filtering when operating HMC1030LP5E with a lower SCI value.
Table 1: Transient Response vs. SCI Setting:
RMSOUT Rise-Time 10% -> 90% (µs) [3]
RMSOUT Rise Settling Time (µs) [2]
Pin = -40
dBm
Pin = 0
dBm
Pin = -20
dBm
0.04
0.03
0.06
0.04
0.06
0.06
0.06
0.74
2.94
3.57
11.9
15
50
67.2
SCI3,2,1
Pin = 0
dBm
Pin = -20
dBm
Pin = -40
dBm
Pin = 0
dBm
Pin = -20
dBm
000
0.06
001
0.06
0.04
0.04
0.9
0.9
0.8
0.04
0.06
2.7
2.7
2.54
010
0.06
011
1.18
0.06
2.30
0.78
10.7
10.7
10
4.69
8
5
43.7
43
41.4
100
4.82
101
21.3
23.9
32
21.5
178
176
169
107
130
91.3
727
718
667
110
90.5
205
278
486
520
378
3000
2950
2730
111
381
851
1120
2047
2042
1515
12240
12066
11770
Rise Time[1] vs.
SCI Setting over Input Power
100000
-40 dBm
-20 dBm
0 dBm
-40 dBm
-20 dBm
0 dBm
10000
RISE SETTLING TIME (us)
1000
1000
100
10
1
0.1
0.01
Pin = -40
dBm
Rise Settling Time[2] vs.
SCI Setting over Input Power
10000
RISE TIME (us)
RMSOUT Fall-time 100% -> 10% (µs) [4]
11
power detectors - SMT
Using larger values of SCI will narrow the operating bandwidth of the integrator, resulting in a longer averaging
time interval and a more filtered output signal. It will also slow the power detector’s transient response. A larger
SCI value favors output accuracy over speed. For the fastest possible transient settling time,s set SCI to 000. This
configuration will operate the integrator at its widest possible bandwidth, resulting in short averaging time-interval
and an output signal with little filtering. For most applications an SCI setting may be selected to maintain a balance
between speed and accuracy. Furthermore, error performance over modulation bandwidth is dependent on the SCI
setting. For example modulations with relatively low frequency components and high crest factors may require higher
SCI (integration) settings.
0
1
2
3
4
5
6
INTEGRATION SETTING (IN DECIMAL)
[1] Measured from 10% to 90%
7
100
10
1
0.1
0
1
2
3
4
5
6
7
INTEGRATION SETTING (IN DECIMAL)
[2] Measured from RF switching edge to 1dB (input referred) settling of RMSOUT.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 32
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Fall Time [1] vs.
SCI Setting over Input Power
100000
-40 dBm
-20 dBm
0 dBm
FALL TIME (us)
10000
1000
10
1
0
1
2
3
4
5
6
7
INTEGRATION SETTING (IN DECIMAL)
Residual Ripple for 0.9 GHz OFDM
Advanced 802.16 @ SCI = 010
100
100
2
1.8
80
1.8
80
1.6
60
1.6
60
1.4
40
20
0
1
0.8
-20
0.6
-40
0.4 RMSOUT
-60
SCI = 000
SCI = 010
0.2
RMSOUT (V)
RF
INPUT
1.2
1.4
0
50
100
150
200
250
300
350
400
450
0
0.8
-20
0.6
-40
RMSOUT
-60
SCI = 000
SCI = 011
0.2
-100
0
-80
-100
0
500
0
50
100
150
200
250
300
350
400
450
TIME (us)
TIME (us)
Residual Ripple for 0.9 GHz
WIBRO @ SCI = 011
Residual Ripple for 0.9 GHz
WIBRO @ SCI = 101
100
2
20
1
0.4
-80
40
RF
INPUT
1.2
500
100
2
1.8
80
60
1.6
60
1.4
40
20
0
1
0.8
-20
0.6
-40
0.4 RMSOUT
-60
SCI = 000
SCI = 011
0.2
-80
-100
0
0
0.5
1
1.5
2
2.5
TIME (ms)
3
3.5
4
4.5
5
RMSOUT (V)
RF
INPUT
1.4
40
RF
INPUT
1.2
20
0
1
0.8
-20
0.6
-40
-60
0.4 RMSOUT
SCI = 000
SCI = 011
0.2
-80
-100
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
TIME (ms)
[1] Measured from 100% to 10%
11 - 33
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
RF INPUT VOLTAGE (mV)
80
1.6
RF INPUT VOLTAGE (mV)
1.8
1.2
RF INPUT VOLTAGE (mV)
RMSOUT (V)
2
RMSOUT (V)
Residual Ripple for 0.9 GHz WiMAX
OFDM Advanced 802.16 @ SCI = 011
RF INPUT VOLTAGE (mV)
Power Detectors - SMT
11
100
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Residual Ripple for 0.9 GHz
LTE Downlink @ SCI = 010
Residual Ripple for 0.9 GHz
LTE Downlink @ SCI = 011
80
1.6
60
1.6
60
1.4
40
20
0
1
0.8
-20
0.6
-40
0.4
-60
RMSOUT
SCI = 000
SCI = 010
0.2
RMSOUT (V)
RF
INPUT
1.2
1.4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
0
0.8
-20
0.6
-40
-60
RMSOUT
SCI = 000
SCI = 011
0.2
-100
0
-80
-100
0
0
2
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Residual Ripple for 0.9 GHz
WCDMA-4TM @ SCI = 011
Residual Ripple for 0.9 GHz
WCDMA-4TM @ SCI = 100
100
2
100
2
1.8
80
60
1.6
60
1.4
40
20
0
1
0.8
-20
0.6
-40
0.4
-60
RMSOUT
SCI = 000
SCI = 011
0.2
-80
-100
0
0
100
200
300
400
500
600
TIME (us)
700
800
900 1000
RMSOUT (V)
RF
INPUT
1.2
RF
INPUT
1.2
40
20
0
1
0.8
-20
0.6
-40
0.4
RMSOUT
-60
SCI = 000
SCI = 100
0.2
RF INPUT VOLTAGE (mV)
80
1.6
RF INPUT VOLTAGE (mV)
1.8
1.4
-80
-100
0
0
100
200
300
400
500
600
700
800
11
2
TIME (ms)
TIME (ms)
RMSOUT (V)
20
1
0.4
-80
40
RF
INPUT
1.2
RF INPUT VOLTAGE (mV)
1.8
RF INPUT VOLTAGE (mV)
RMSOUT (V)
100
2
80
900 1000
TIME (us)
LOG-Slope and Intercept
power detectors - SMT
100
2
1.8
The HMC1030LP5E provides for an adjustment of output scale with the use of integrated operational amplifiers for
both channels. Log-slope and intercept can be adjusted to “magnify” a specific portion of the input sensing range, and
to fully utilize the dynamic range of the RMS outputs.
A log-slope of 37 mV/dB (@1900 MHz) is set by connecting RMS Output to VSET through a resistor network for B=1
(see application schematic). The log-slope is adjusted by using the appropriate resistors RFBKA, RFBKB, RSHUNTA,
RSHUNTB on the RMSA/RMSB and VSETA/VSETB pins. Log-intercept is adjusted by applying DC voltage to the
VBLINEA and /VBLINEB.
Due to the 15k Ohm input resistance at the VSETA/VSETB pins, moderately low resistance values should be used to
minimize the scaling errors. Very low resistor values will reduce the load driving capabilities of RMSA/RMSB outputs
while larger values will result in scaling errors and increase of the temperature errors because of the mismatch of the
on-chip and external resistor temperature coefficients.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 34
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Optimized slope = B * log-slope
Optimized intercept = log-intercept – (RFBK /RSET ) * VBLINE
RFBK
ß =(1/2)
RFBK // RSHUNT // RSET
Power Detectors - SMT
11
When RFBK=0 to set VRMS=VSET, then B=1/2.
If RSET is not populated, then B =1/2 * (RFBK / (RFBK // RSHUNT)) and intercept is at nominal value.
Note: Avoid excessive loading of the RMS output; keep CLOAD < 35 pF, and RLOAD > 375 Ohm
Example: The logarithmic slope can be simply increased by choosing appropriate RFBK and RSHUNT values while not
populating the RSET resistor on the evaluation board to keep the intercept at nominal value.
Setting RFBK =1k Ohm and RSHUNT = 0.5k Ohm results in an optimized slope of:
Optimized Slope = B * log_slope = 1.5* 37 mV / dB
Optimized Slope = 55.5 mV / dB
Slope Adjustment
4.5
4
Nominal
High Slope
RMSOUT (V)
3.5
3
2.5
2
Slope = 55.5 mV/dB
Rset = open
Rfbk = 1 Kohm
Rshunt = 0.5 Kohm
1.5
Slope = 37.2 mV/dB
Rset = open
Rfbk = 1 Kohm
Rshunt = 1 Kohm
1
0.5
0
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
11 - 35
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
Example: The logarithmic intercept can also be adjusted by choosing appropriate RFBK, RSHUNT, and RSET values.
Setting RFBK = 1k Ohm, RSHUNT =0.5k Ohm, and RSET = 4.7k Ohm results in an optimized slope of:
Optimized Slope = B * log_slope = 1.6 * 37 mV / dB
Optimized Slope = 59.2 mV / dB
Optimized Intercept = log_intercept –(RFBK /RSET )*VBLINE
Optimized Intercept = log_intercept - 0.213 * VBLINE
Intercept Adjustment
4
RMSOUT (V)
3.5
Rset = 4.7 Kohm
Rfbk = 1 Kohm
Rshunt = 0.5 Kohm
3
2.5
2
VBLINE = -3.2 V
VBLINE = -1.6 V
VBLINE = -0.8 V
VBLINE = 0 V
VBLINE = +0.8 V
VBLINE = +1.6 V
VBLINE = +3.2 V
1.5
1
0.5
0
-70
-60
-50
-40
-30
-20
-10
0
10
INPUT POWER (dBm)
Temperature Sensor Interface
The HMC1030LP5E provides a buffered PTAT temperature sensor output that provides a temperature scaling factor
of 2 mV/°C with a typical output voltage of 567 mV at 0°C. The output is capable of sourcing 1.5 mA.
TEMP Output
power detectors - SMT
11
4.5
0.8
TEMPOUT (V)
0.7
TEMPOUT
0.6
0.5
0.4
-40 -30 -20 -10
0
10
20
30
40
50
60
70 80
90
TEMPERATURE (Celcius)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
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Application Support: Phone: 978-250-3343 or [email protected]
11 - 36
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
DC Offset Compensation Loop
Internal DC offsets, which are input signal dependant, require continuous cancellation. Offset cancellation is a critical
function needed for maintenance of measurement accuracy and sensitivity. The DC offset cancellation loop performs
this function, and its response is largely defined by the capacitances (COFS) connected between COFPA&COFNA pins
and between COFPB&COFNB pins. The COFS capacitors sets the loop bandwidth of the DC offset compensations.
Higher COFS values are required for measuring lower RF frequencies. The optimal loop bandwidth setting will allow
internal offsets to be cancelled at a minimally acceptable speed.
Standby Mode
The ENX pin can be used to force the power detector into a low-power standby mode. As ENX is deactivated, power
is restored to all of the circuits. There is no memory of previous conditions. Coming out of stand by, internal integration
and COFS capacitors will require recharging, so if large SCI values or large COFS capacitor values have been
chosen, the wake-up time will be lengthened.
Modulation Performance – Crest factor performance
The HMC1030LP5E is able to detect the average power of RF signals with complex modulation schemes with
exceptional accuracy. The proprietary RMS detection core is optimized to accurately detect the RMS power of the
modulated RF signals with very high crest factors. This crest factor immune detection architecture of HMC1030LP5E
results in detection accuracy of better than 0.2 dB over the entire operating frequency and temperature range,
compared with the CW response under actual WCDMA4TM test signals shown below:
Reading Error for WCDMA 4 Carrier wrt
CW Response @ +25°C
Reading Error for WCDMA 4 Carrier wrt
CW Response @ 1900 MHz
1
0.8
0.6
0.6
0.4
0.4
ERROR(dB)
1
0.8
0.2
0
-0.2
100MHz
900MHz
1900MHz
2200MHz
2700MHz
3500MHz
3900MHz
-0.4
-0.6
-0.8
-1
-70
-60
-50
-40
-30
-20
INPUT POWER (dBm)
11 - 37
Bandwidth , Hz
For example: loop bandwidth for DC cancellation with COFS = 1nF, bandwidth is ~62 kHz
ERROR (dB)
Power Detectors - SMT
11
1
DC Offset Cancellation Loop ≈
π(500)(COFS + 20 x 1012)
0.2
0
-0.2
-0.4
+25C
+85C
-40C
-0.6
-0.8
-10
0
10
-1
-70
-60
-50
-40
-30
-20
-10
0
INPUT POWER (dBm)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
10
HMC1030LP5E
v01.0411
DUAL RMS POWER DETECTOR
DC - 3.9 GHz
RMSA Error vs.
Crest Factor over Frequency
RMSA READING ERROR (dB)
1
0.8
0.6
1900 MHz Error from CW (-37 dBm)
2700 MHz Error from CW (-39 dBm)
0.4
0.2
0
-0.2
-0.4
-0.6
-0.8
-1
3
4
5
6
7
8
9
10
11
12
13
11
System Calibration
Due to part-to-part variations in log-slope and log-intercept, a system-level calibration is recommended to satisfy
absolute accuracy requirements. When performing this calibration, choose at least two test points: near the top-end
and bottom-end of the measurement range. It is best to measure the calibration points in the regions (of frequency and
amplitude) where accuracy is most important. Derive the log-slope and log-intercept, and store them in non-volatile
memory.
For example if the following two calibration points were measured at 2.35 GHz:
With Vrms = 2.34V at Pin = -7 dBm,
Now performing a power measurement:
and Vrms=1.84V at Pin = -16 dBm
Vrms measures 2.13V
Slope Calibration Constant = SCC
[Measured Pin] = [Measured Vrms]*SCC + ICC
SCC = (-16+7)/(1.84-2.34) = 18 dB/V
[Measured Pin] = 2.13*18.0 – 49.12 = -10.78 dBm
Intercept Calibration Constant = ICC
An error of only 0.22 dB
ICC = Pin – SCC*Vrms = -7 – 18.0 * 2.34 = -49.12 dBm
Factory system calibration measurements should be made using an input signal representative of the application. If
the power detector will operate over a wide range of frequencies, choose a central frequency for calibration.
Layout Considerations
power detectors - SMT
INPUT SIGNAL CREST FACTOR (dB)
• Mount RF input coupling capacitors close to the IN+ and IN- pins.
• Solder the heat slug on the package underside to a grounded island which can draw heat away from the die
with low thermal impedance. The grounded island should be at RF ground potential.
• Connect power detector ground to the RF ground plane, and mount the supply decoupling capacitors close
to the supply pins.
Definitions:
• Log-slope: slope of PIN –> VRMS transfer characteristic. In units of mV/dB
• Log-intercept: x-axis intercept of PIN –> VRMS transfer characteristic. In units of dBm.
• RMS Output Error: The difference between the measured PIN and actual PIN using a line of best fit.
[measured_PIN] = [measured_VRMS] / [best-fit-slope] + [best-fit-intercept], dBm
• Input Dynamic Range: the range of average input power for which there is a corresponding RMS output
voltage with “RMS Output Error” falling within a specific error tolerance.
• Crest Factor: Peak power to average power ratio for time-varying signals.
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343
Fax: 978-250-3373
Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or [email protected]
11 - 38
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