STMicroelectronics M54HC367F1R Hex bus buffer 3-state hc367 non inverting, hc368 inverting Datasheet

M54/M74HC367
M54/M74HC368
HEX BUS BUFFER (3-STATE)
HC367 NON INVERTING, HC368 INVERTING
.
.
.
.
.
.
.
.
HIGH SPEED
tPD = 11 ns (TYP.) AT VCC = 5 V
LOW POWER DISSIPATION
ICC = 4 µA (MAX.) AT TA = 25 °C
HIGH NOISE IMMUNITY
VNIH = VNIL = 28 % VCC (MIN.)
OUTPUT DRIVE CAPABILITY
15 LSTTL LOADS
SYMMETRICAL OUTPUT IMPEDANCE
|IOH| = IOL = 6 mA (MIN.)
BALANCED PROPAGATION DELAYS
tPLH = tPHL
WIDE OPERATING VOLTAGE RANGE
VCC (OPR) = 2 V TO 6 V
PIN AND FUNCTION COMPATIBLE WITH
54/74LS367/368
B1R
(Plastic Package)
F1R
(Ceramic Package)
M1R
(Micro Package)
C1R
(Chip Carrier)
ORDER CODES :
M54HCXXXF1R
M74HCXXXM1R
M74HCXXXB1R
M74HCXXXC1R
PIN CONNECTIONS (top view)
HC368
DESCRIPTION
The M54/74HC367 and the M54/74HC368 are high
speed CMOS HEX BUS BUFFER (3-STATE) fabricated in silicon gate C2MOS technology. They have
the same high speed performance of LSTTL combined with true CMOS low power consumption.
These devices contain six buffers, four buffers are
controlled by an enable input (G1) and the other two
buffers are controlled by the other enable input
(G2) ; the outputs of each buffer group are enabled
when G1 and/or G2 inputs are held low, and
when held high these outputs are disabled to be
high-impedance.
HC367
These outputs are capable of driving up to 15 LSTTL
loads. The designer has a choice of non-inverting
outputs (HC367) and inverting outputs (HC368).
All inputs are equipped with protection circuits
against static discharge and transient excess voltage.
October 1992
1/11
M54/M74HC367/368
INPUT AND OUTPUT EQUIVALENT CIRCUIT
CHIP CARRIER
HC367
HC368
NC = No Internal Connection
TRUTH TABLE
INPUTS
OUTPUTS
G
An
Y n (367)
Yn (368)
L
L
L
H
L
H
H
L
H
X
Z
Z
X = DON’T CARE Z = HIGH IMPEDANCE
PIN DESCRIPTION (HC367)
PIN No
SYMBOL
NAME AND FUNCTION
1, 15
G1, G2
2, 4, 6, 10,
12, 14
3, 5, 7, 9,
11, 13
1A to 6A
Data Inputs
1Y to 6Y
Data Outputs
8
GND
16
V CC
2/11
Output Enable Inputs
PIN DESCRIPTION (HC368)
PIN No
SYMBOL
NAME AND FUNCTION
1, 15
G1, G2
2, 4, 6, 10,
12, 14
3, 5, 7, 9,
11, 13
1A to 6A
Data Inputs
Output Enable Inputs
1Y to 6Y
Data Outputs
Ground (0V)
8
GND
Ground (0V)
Positive Supply Voltage
16
VCC
Positive Supply Voltage
M54/M74HC367/368
IEC LOGIC SYMBOL
HC367
HC368
ABSOLUTE MAXIMUM RATINGS
Symbol
VCC
Parameter
Supply Voltage
Value
-0.5 to +7
Unit
V
VI
DC Input Voltage
-0.5 to VCC + 0.5
V
VO
IIK
DC Output Voltage
DC Input Diode Current
-0.5 to VCC + 0.5
± 20
V
mA
IOK
DC Output Diode Current
± 20
mA
DC Output Source Sink Current Per Output Pin
DC VCC or Ground Current
± 35
± 70
mA
mA
500 (*)
mW
IO
ICC or IGND
PD
Power Dissipation
Tstg
TL
Storage Temperature
Lead Temperature (10 sec)
-65 to +150
300
o
o
C
C
Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these condition isnotimplied.
(*) 500 mW: ≅ 65 oC derate to 300 mW by 10mW/oC: 65 oC to 85 oC
RECOMMENDED OPERATING CONDITIONS
Symbol
VCC
Parameter
Supply Voltage
VI
Input Voltage
VO
Top
Output Voltage
Operating Temperature: M54HC Series
M74HC Series
tr, tf
Input Rise and Fall Time
Value
2 to 6
Unit
V
0 to VCC
V
0 to VCC
-55 to +125
-40 to +85
VCC = 2 V
0 to 1000
VCC = 4.5 V
VCC = 6 V
0 to 500
0 to 400
V
C
o
C
o
ns
3/11
M54/M74HC367/368
DC SPECIFICATIONS
Test Conditions
Symbol
VIH
V IL
V OH
VOL
Parameter
High Level Input
Voltage
Low Level Input
Voltage
High Level
Output Voltage
Low Level Output
Voltage
VCC
(V)
2.0
Min.
1.5
4.5
3.15
6.0
2.0
4.2
Typ.
6.0
2.0
Max.
-40 to 85 oC -55 to 125 oC
74HC
54HC
Min.
1.5
Max.
3.15
Min.
1.5
4.2
0.5
0.5
1.35
1.35
1.35
1.8
2.0
1.9
1.9
4.4
4.5
4.4
4.4
6.0
4.5
5.9
4.18
6.0
4.31
5.9
4.13
5.9
4.10
6.0
IO=-7.8 mA
5.68
5.8
5.63
5.60
2.0
4.5
4.5
6.0
V
1.8
1.9
VI =
IO=-20 µA
VIH
or
V IL IO=-6.0 mA
4.5
V
0.5
1.8
Unit
Max.
3.15
4.2
4.5
6.0
II
Value
TA = 25 oC
54HC and 74HC
V
0.0
0.0
0.1
0.1
0.1
0.1
0.1
0.1
0.0
0.1
0.1
0.1
0.17
0.18
0.26
0.26
0.33
0.33
0.40
0.40
VI = VCC or GND
±0.1
±1
±1
µA
VI =
IO= 20 µA
VIH
or
V IL IO= 6.0 mA
IO= 7.8 mA
V
Input Leakage
Current
6.0
IOZ
3 State Output
Off State Current
6.0
VI = VIH or VIL
VO = VCC or GND
±0.5
±5
±10
µA
ICC
Quiescent Supply
Current
6.0
VI = VCC or GND
4
40
80
µA
4/11
M54/M74HC367/368
AC ELECTRICAL CHARACTERISTICS (C L = 50 pF, Input t r = tf = 6 ns)
Test Conditions
o
Symbol
Parameter
VCC
(V)
CL
(pF)
tTLH
tTHL
Output Transition
Time
2.0
4.5
50
Propagation
Delay Time
6.0
2.0
4.5
6.0
tPLH
tPHL
tPZL
tPZH
tPLZ
tPHZ
CIN
CPD (*)
Output Enable
Time
Output Disable
Time
2.0
4.5
6.0
2.0
4.5
TA = 25 C
54HC and 74HC
Min.
50
150
50
RL = 1 KΩ
6.0
2.0
4.5
6.0
150
RL = 1 KΩ
2.0
4.5
6.0
50
RL = 1 KΩ
Input Capacitance
Power Dissipation
Capacitance
Value
-40 to 85 oC -55 to 125 oC
74HC
54HC
Min.
Max.
75
15
Min.
Max.
90
18
Unit
Typ.
25
7
Max.
60
12
6
30
10
9
10
85
17
14
13
105
21
18
15
130
26
22
42
14
12
36
11
105
21
18
90
18
130
26
22
115
23
160
32
27
135
27
9
49
15
13
15
110
22
19
20
140
28
24
23
165
33
28
ns
32
14
12
95
19
16
120
24
20
145
29
25
ns
5
33
10
10
10
pF
ns
ns
ns
ns
pF
(*) CPD is defined as the value of the IC’s internal equivalent capacitance which is calculated from the operating current consumption without load.
(Refer to Test Circuit). Average operting current can be obtained by the following equation. ICC(opr) = CPD •VCC •fIN + ICC/6 (per Channel)
TEST CIRCUIT ICC (Opr.)
C PD CALCULATION
CPD is to be calculated with the following
formula by using the measured value of
ICC (opr.) in the test circuit opposite.
ICC ( opr)
CPD =
fIN × VCC
In determining the typical value of CPD, a
relatively high frequency of 1 MHz was applied to fIN, in order to eliminate any error
caused by the quiescent supply current.
INPUT WAVEFORM IS THE SAME AS THAT IN CASE OF
SWITCHING CHARACTERISTICS TEST.
5/11
M54/M74HC367/368
SWITCHING CHARACTERISTICS TEST WAVEFORM
GND
VCC
Note : Such a logic level shall be applied to each input that the output voltage stays in the apposite side to the switch connection level, when
the output is enable.
6/11
M54/M74HC367/368
Plastic DIP16 (0.25) MECHANICAL DATA
mm
DIM.
MIN.
a1
0.51
B
0.77
TYP.
inch
MAX.
MIN.
TYP.
MAX.
0.020
1.65
0.030
0.065
b
0.5
0.020
b1
0.25
0.010
D
20
0.787
E
8.5
0.335
e
2.54
0.100
e3
17.78
0.700
F
7.1
0.280
I
5.1
0.201
L
Z
3.3
0.130
1.27
0.050
P001C
7/11
M54/M74HC367/368
Ceramic DIP16/1 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
20
0.787
B
7
0.276
D
E
3.3
0.130
0.38
e3
0.015
17.78
0.700
F
2.29
2.79
0.090
0.110
G
0.4
0.55
0.016
0.022
H
1.17
1.52
0.046
0.060
L
0.22
0.31
0.009
0.012
M
0.51
1.27
0.020
0.050
N
P
Q
10.3
7.8
8.05
5.08
0.406
0.307
0.317
0.200
P053D
8/11
M54/M74HC367/368
SO16 (Narrow) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
A
a1
inch
MAX.
MIN.
TYP.
1.75
0.1
0.068
0.2
a2
MAX.
0.004
0.007
1.65
0.064
b
0.35
0.46
0.013
0.018
b1
0.19
0.25
0.007
0.010
C
0.5
0.019
c1
45° (typ.)
D
9.8
E
5.8
10
0.385
6.2
0.228
0.393
0.244
e
1.27
0.050
e3
8.89
0.350
F
3.8
4.0
0.149
0.157
G
4.6
5.3
0.181
0.208
L
0.5
1.27
0.019
0.050
M
S
0.62
0.024
8° (max.)
P013H
9/11
M54/M74HC367/368
PLCC20 MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
9.78
10.03
0.385
0.395
B
8.89
9.04
0.350
0.356
D
4.2
4.57
0.165
0.180
d1
2.54
0.100
d2
0.56
0.022
E
7.37
8.38
0.290
0.330
e
1.27
0.050
e3
5.08
0.200
F
0.38
0.015
G
0.101
0.004
M
1.27
0.050
M1
1.14
0.045
P027A
10/11
M54/M74HC367/368
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use ascritical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1994 SGS-THOMSON Microelectronics - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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11/11
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