isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE8503 DESCRIPTION ·Collector-Emitter Sustaining Voltage: VCEO(SUS) = 800V(Min) ·High Switching Speed APPLICATIONS ·Designed for high-voltage ,high-speed, power switching in inductive circuits where fall time is critical. They are particularly suited for line operated switch-mode applications. Typical applications: ·Switching regulators ·Inverters ·Solenoid and relay drivers ·Motor controls ·Deflection circuits ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCEV Collector-Emitter Voltage 1400 V VCEO(SUS) Collector-Emitter Voltage 800 V Emitter-Base Voltage 8 V IC Collector Current-Continuous 5 A ICM Collector Current-Peak 10 A IB Base Current-Continuous 4 A IBM Base Current-Peak 8 A PC Collector Power Dissipation@TC=25℃ 80 W TJ Junction Temperature 125 ℃ Tstg Storage Temperature -65~125 ℃ VEBO THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth j-c Thermal Resistance,Junction to Case 1.25 ℃/W isc website：www.iscsemi.cn 1 isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJE8503 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-Emitter Sustaining Voltage IC=100mA ; IB=0 VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃ 2.0 3.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 5A; IB= 2A 5.0 V Base-Emitter Saturation Voltage IC= 2.5A; IB= 1A IC= 2.5A; IB= 1A,TC=100℃ 1.5 1.5 V ICEV Collector Cutoff Current VCEV=1400V;VBE(off)=1.5V VCEV=1400V;VBE(off)=1.5V;TC=100℃ 0.25 5.0 mA ICER Collector Cutoff Current VCE= 1400V; RBE= 50Ω,TC= 100℃ 5.0 mA IEBO Emitter Cutoff Current VEB= 7V; IC=0 1.0 mA hFE DC Current Gain IC= 1A ; VCE= 5V 7.5 COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0kHz 60 300 pF 40 200 ns 125 2000 ns 1200 4000 ns 650 2000 ns VBE(sat) CONDITIONS MIN TYP. MAX 800 UNIT V Switching times;Resistive Load td Delay Time tr Rise Time ts Storage Time tf Fall Time isc website：www.iscsemi.cn IC= 2.5A , VCC= 500V, VBE(off)= 5V IB1= 1A; tp= 50μs Duty Cycle≤2.0% 2