DMG4496SSS N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS(ON) max ID max TA = +25°C Low On-Resistance Low Input Capacitance 21.5mΩ @ VGS = 10V 10A Fast Switching Speed 8A Low Input/Output Leakage Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability V(BR)DSS NEW PRODUCT 30V Features and Benefits 29mΩ @ VGS = 4.5V Description This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Mechanical Data Case: SO-8 Applications Backlighting Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections Indicator: See diagram DC-DC Converters Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.074 grams (approximate) Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 SO-8 S D S D S D G D Top View Internal Schematic Top View D G S Equivalent circuit Ordering Information (Note 4 & 5) Part Number DMG4496SSS-13 DMG4496SSSQ-13 Notes: Compliance Standard Automotive Case SO-8 SO-8 Packaging 2500 / Tape & Reel 2500 / Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. Automotive products are AEC-Q101 qualified and are PPAP capable. Automotive, AEC-Q101 and standard products are electrically and thermally the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_grade_definitions/. 5. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information 8 5 8 5 G4496SS G4496SS YY WW YY WW 1 4 Chengdu A/T Site DMG4496SSS Document number: DS32048 Rev. 5 - 2 1 = Manufacturer’s Marking G4496SS = Product Type Marking Code YYWW = Date Code Marking YY or YY = Year (ex: 13 = 2013) WW = Week (01 - 53) YY = Date Code Marking for SAT (Shanghai Assembly/ Test site) YY = Date Code Marking for CAT (Chengdu Assembly/ Test site) 4 Shanghai A/T Site 1 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4496SSS Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic NEW PRODUCT Symbol Value Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±25 V ID 10 6 A IDM 60 A Steady State Continuous Drain Current (Note 6) TA = +25°C TA = +85°C Pulsed Drain Current (Note 7) Avalanche Current (Notes 7 & 8) IAR 8 A Repetitive Avalanche Energy (Notes 7 & 8) L = 0.1mH EAR 3.2 mJ Symbol Value Unit PD 1.42 W RθJA 88.49 °C/W TJ, TSTG -55 to +150 °C Thermal Characteristics Characteristic Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6) Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Symbol Min Typ Max Unit BVDSS 30 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current IDSS — — 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±25V, VDS = 0V Gate Threshold Voltage VGS(th) 0.8 1.2 2.0 V VDS = VGS, ID = 250μA Static Drain-Source On-Resistance RDS(ON) — 16 22 21.5 29 mΩ Forward Transfer Admittance |Yfs| — 11.7 — S VDS = 5V, ID = 10A Diode Forward Voltage VSD — 0.70 1 V VGS = 0V, IS = 1A Input Capacitance Ciss — 493.5 — pF Output Capacitance Coss — 94.5 — pF Reverse Transfer Capacitance Crss — 50.4 — pF Gate Resistance Rg — 2.86 — Ω Total Gate Charge (VGS = 4.5V) Qg — 4.7 — Total Gate Charge (VGS = 10V) Qg — 10.2 — Gate-Source Charge Qgs — 1.4 — nC Gate-Drain Charge Qgd — 1.7 — nC Turn-On Delay Time tD(on) — 4.76 — ns Turn-On Rise Time tr — 3.64 — ns Turn-Off Delay Time tD(off) — 19.5 — ns tf — 4.9 — ns Drain-Source Breakdown Voltage Test Condition ON CHARACTERISTICS (Note 9) VGS = 10V, ID = 10A VGS = 4.5V, ID = 7.5A DYNAMIC CHARACTERISTICS (Note 10) Turn-Off Fall Time Notes: nC VDS =15V, VGS = 0V, f = 1.0MHz VDS =0V, VGS = 0V, f = 1MHz VDS = 15V, VGS = 4.5V, ID =10A VDS = 15V, VGS = 10V, ID =10A VGS = 10V, VDs = 15V, RG = 6Ω, RL = 15Ω, 2 6. Device mounted on 1 in. FR-4 board with 2oz. Copper, in a still air environment @ TA = +25°C. The value in any given application depends on the user's specific board design. 7. Repetitive rating, pulse width limited by junction temperature. 8. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = 25°C 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to production testing. DMG4496SSS Document number: DS32048 Rev. 5 - 2 2 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4496SSS 30 20 VGS = 10V VDS = 5V 20 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 4.5V VGS = 4.0V 15 VGS = 3.5V 10 5 15 10 VGS = 150°C VGS = 125°C VGS = 85°C 5 VGS = 3.0V VGS = 25°C VGS = 2.5V 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristic 0.05 0.04 VGS = 3.5V 0.03 VGS = 4.5V 0.02 VGS = 10V 0.01 0 0 5 10 15 20 25 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage 30 1.7 VGS = 4.5V ID = 5A 1.5 VGS = 10V ID = 10A 1.3 1.1 0.9 0.7 0.5 -50 0 5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 VGS = -55°C RDSON, DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDSON, DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) NEW PRODUCT 25 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMG4496SSS Document number: DS32048 Rev. 5 - 2 0 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristic 4 0.04 VGS = 10V 0.03 TA = 150°C TA = 125°C TA = 85°C 0.02 TA = 25°C TA = -55°C 0.01 0 0 5 10 15 20 25 ID, DRAIN CURRENT (A) Fig. 4 Typical On-Resistance vs. Drain Current and Temperature 30 0.06 0.05 0.04 VGS = 4.5V ID = 5A 0.03 0.02 VGS = 10V ID = 10A 0.01 0 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature 3 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4496SSS 20 VGS(TH), GATE THRESHOLD VOLTAGE (V) 18 1.8 IS, SOURCE CURRENT (A) 16 1.6 ID = 1mA 1.4 1.2 ID = 250µA 1.0 0.8 1,000 TA = 25°C 12 10 8 6 4 0 IDSS, LEAKAGE CURRENT (nA) Coss 100 Crss 0 4 8 12 16 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Total Capacitance 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 10,000 f = 1MHz Ciss 10 14 2 0.6 -50 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature C, CAPACITANCE (pF) T A = 125°C 100 T A = 85°C 10 TA = 25°C 1 20 T A = 150°C 1,000 0 5 10 15 20 25 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 10 Typical Leakage Current vs. Drain-Source Voltage 30 1 r(t), TRANSIENT THERMAL RESISTANCE NEW PRODUCT 2.0 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.9 D = 0.05 RJA(t) = r(t) * RJA RJA = 90°C/W D = 0.02 0.01 P(pk) D = 0.01 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1/t2 D = 0.005 D = Single Pulse 0.001 0.00001 DMG4496SSS Document number: DS32048 Rev. 5 - 2 0.0001 t1 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (s) Fig. 11 Transient Thermal Response 4 of 6 www.diodes.com 10 100 1,000 September 2013 © Diodes Incorporated DMG4496SSS Package Outline Dimensions 0.254 NEW PRODUCT Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. E1 E A1 L Gauge Plane Seating Plane Detail ‘A’ h 7°~9° 45° Detail ‘A’ A2 A A3 b e D SO-8 Dim Min Max A 1.75 A1 0.10 0.20 A2 1.30 1.50 A3 0.15 0.25 b 0.3 0.5 D 4.85 4.95 E 5.90 6.10 E1 3.85 3.95 e 1.27 Typ h 0.35 L 0.62 0.82 0 8 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. X Dimensions X Y C1 C2 C1 C2 Value (in mm) 0.60 1.55 5.4 1.27 Y DMG4496SSS Document number: DS32048 Rev. 5 - 2 5 of 6 www.diodes.com September 2013 © Diodes Incorporated DMG4496SSS IMPORTANT NOTICE NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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