H5N2503P Silicon N Channel MOS FET High Speed Power Switching REJ03G1105-0200 (Previous: ADE-208-1374A) Rev.2.00 Sep 07, 2005 Features • • • • • Low on-resistance: R DS (on) = 0.04 Ω typ. Low leakage current: IDSS = 1 µA max (at VDS = 250 V) High speed switching: tf = 190 ns typ (at VGS = 10 V, VDD = 125 V, ID = 25 A) Low gate charge: Qg = 140 nC typ (at VDD = 200 V, VGS = 10 V, ID = 50 A) Avalanche ratings Outline RENESAS Package code: PRSS0004ZE-A (Package name: TO-3P) D 1. Gate 2. Drain (Flange) 3. Source G 1 Rev.2.00 Sep 07, 2005 page 1 of 6 2 3 S H5N2503P Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Symbol VDSS Value 250 Unit V VGSS ID ±30 50 V A 200 50 A A 200 50 A A 150 0.833 W °C/W 150 –55 to +150 °C °C Gate to source voltage Drain current Note 1 Drain peak current Body-drain diode reverse drain current ID (pulse) IDR Body-drain diode reverse drain peak current Avalanche current IDR (pulse) Note 3 IAP Note 1 Note 2 Channel dissipation Channel to case thermal Impedance Pch θ ch-c Channel temperature Storage temperature Tch Tstg Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. Tch ≤ 150°C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Symbol V (BR) DSS Min 250 Typ — Max — Unit V Test Conditions ID = 10 mA, VGS = 0 IGSS IDSS — — — — ±0.1 1 µA µA VGS = ±30 V, VDS = 0 VDS = 250 V, VGS = 0 VGS (off) RDS (on) 3.0 — — 0.040 4.0 0.055 V Ω VDS = 10 V, ID = 1 mA Note 4 ID = 25 A, VGS = 10 V Forward transfer admittance Input capacitance |yfs| Ciss 25 — 40 5150 — — S pF Output capacitance Reverse transfer capacitance Coss Crss — — 620 105 — — pF pF ID = 25 A, VDS = 10 V VDS = 25 V VGS = 0 f = 1 MHz Turn-on delay time Rise time td (on) tr — — 58 210 — — ns ns Turn-off delay time Fall time td (off) tf — — 220 190 — — ns ns Total gate charge Gate to source charge Qg Qgs — — 140 25 — — nC nC Gate to drain charge Body-drain diode forward voltage Qgd VDF — — 60 1.0 — 1.5 nC V IF = 50 A, VGS = 0 trr Qrr — — 210 1.8 — — ns µC IF = 50 A, VGS = 0 diF/dt = 100 A/µs Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Body-drain diode reverse recovery time Body-drain diode reverse recovery charge Note: 4. Pulse test Rev.2.00 Sep 07, 2005 page 2 of 6 ID = 25 A VGS = 10 V RL = 5 Ω Rg = 10 Ω VDD = 200 V VGS = 10 V ID = 50 A Note 4 H5N2503P Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 1000 ID (A) 300 150 Drain Current Channel Dissipation Pch (W) 200 100 50 0 0 50 100 150 Case Temperature 200 100 PW DC 30 10 80 m s( 1s (T c= ho t) 25 °C ) 100 300 1000 VDS (V) Typical Transfer Characteristics 100 VDS = 10 V Pulse Test 6V 60 80 60 5.5 V 40 5V 20 Drain Current Drain Current ion 10 Drain to Source Voltage Pulse Test 7V 6.5 V at = Operation in 1 this area is limited by RDS(on) 0.3 Ta = 25°C 0.1 1 3 10 30 Tc (°C) ID (A) ID (A) 10 V 8V er 3 Typical Output Characteristics 100 Op 10 µ 0µ s 1m s s 10 40 25°C Tc = 75°C 20 –25°C VGS = 4.5 V 0 0 0 4 8 12 20 0 VDS (V) 2 4 6 10 8 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source on State Resistance vs. Drain Current 5 200 Drain to Source on State Resistance RDS(on) (mΩ) Drain to Source Saturation Voltage VDS(on) (V) Drain to Source Voltage 16 Pulse Test 4 3 ID = 50 A 2 25 A 1 10 A 0 0 4 8 12 Gate to Source Voltage Rev.2.00 Sep 07, 2005 page 3 of 6 16 20 VGS (V) Pulse Test 100 50 VGS = 10 V, 15 V 20 10 1 2 5 10 Drain Current 20 50 ID (A) 100 Static Drain to Source on State Resistance vs. Temperature 200 Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance RDS(on) (mΩ) H5N2503P Pulse Test VGS = 10 V 160 120 ID = 50 A 80 25 A 10 A 40 0 –40 0 40 80 120 Case Temperature 160 100 50 Tc = –25°C 20 10 5 25°C 2 75°C 1 0.5 VDS = 10 V Pulse Test 0.2 0.2 500 20000 Capacitance C (pF) Reverse Recovery Time trr (ns) 50000 200 100 50 di / dt = 100 A / µs VGS = 0, Ta = 25°C 0.3 1 3 10 Reverse Drain Current 30 2000 1000 Coss 500 200 Crss 50 100 0 20 200 8 100 4 VDD = 200 V 100 V 50 V 0 0 40 80 Gate Charge Rev.2.00 Sep 07, 2005 page 4 of 6 120 160 Qg (nC) 0 200 VGS (V) 16 12 VDS 60 80 100 VDS (V) Switching Characteristics 10000 Switching Time t (ns) 300 40 Drain to Source Voltage Gate to Source Voltage VDS (V) Drain to Source Voltage VGS VDD = 50 V 100 V 200 V ID (A) Ciss 5000 100 20 400 50 100 10000 IDR (A) ID = 50 A 10 20 VGS = 0 f = 1 MHz Dynamic Input Characteristics 500 5 Typical Capacitance vs. Drain to Source Voltage 1000 10 0.1 2 Drain Current Tc (°C) Body-Drain Diode Reverse Recovery Time 20 0.5 1 VGS = 10 V, VDD = 125 V PW = 10 µs, duty ≤ 1 % RG = 10 Ω 1000 tr td(off) tf 100 td(on) tr 10 0.1 0.3 1 3 Drain Current 10 30 ID (A) 100 H5N2503P Gate to Source Cutoff Voltage vs. Case Temperature Reverse Drain Current vs. Source to Drain Voltage 5 Gate to Source Cutoff Voltage VGS(off) (V) Reverse Drain Current IDR (A) 100 80 VGS = 0 V 60 40 10 V 20 5V VDS = 10 V 4 ID = 10 mA 3 1 mA 0.1 mA 2 1 Pulse Test 0 –50 0 0 0.4 0.8 1.2 1.6 Normalized Transient Thermal Impedance γ s (t) Source to Drain Voltage 2.0 VSD (V) 0 50 100 Case Temperature 150 200 Tc (°C) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch – c (t) = γ s (t) • θch – c θch – c = 0.833°C/W, Tc = 25°C 0.1 0.05 0.03 PDM 0.02 1 0.0 1s t ho 0.01 10 µ pu D= lse PW T PW T 100 µ 1m 10 m Pulse Width 100 m 1 PW (S) Switching Time Test Circuit Vin Monitor 10 Waveform 90% Vout Monitor D.U.T. Vin 10% RL Vout 10 Ω Vin 10 V VDD = 125 V 10% 90% td(on) Rev.2.00 Sep 07, 2005 page 5 of 6 10% tr 90% td(off) tf H5N2503P Package Dimensions RENESAS Code Package Name MASS[Typ.] SC-65 PRSS0004ZE-A TO-3P / TO-3PV 5.0g 15.6 ± 0.3 Unit: mm 4.8 ± 0.2 1.5 0.3 19.9 ± 0.2 2.0 14.9 ± 0.2 0.5 1.0 φ3.2 ± 0.2 5.0 ± 0.3 JEITA Package Code 1.6 2.0 1.4 Max 18.0 ± 0.5 2.8 1.0 ± 0.2 3.6 0.6 ± 0.2 0.9 1.0 5.45 ± 0.5 5.45 ± 0.5 Ordering Information Part Name Quantity Shipping Container H5N2503P-E 360 pcs Box (Tube) Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of production before ordering the product. Rev.2.00 Sep 07, 2005 page 6 of 6 Sales Strategic Planning Div. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Keep safety first in your circuit designs! 1. Renesas Technology Corp. puts the maximum effort into making semiconductor products better and more reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. Notes regarding these materials 1. These materials are intended as a reference to assist our customers in the selection of the Renesas Technology Corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to Renesas Technology Corp. or a third party. 2. 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