AP01L60H/J-H RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET ▼ 100% Avalanche Rated D ▼ Fast Switching Speed ▼ Simple Drive Requirement BVDSS 700V RDS(ON) 12Ω ID G 1A S Description The TO-252 package is universally preferred for all commercial-industrial surface mount applications and suited for AC/DC converters. The through-hole version (AP01L60J) is available for low-profile applications. G D S TO-252(H) G D S TO-251(J) Rating Units Absolute Maximum Ratings Parameter Symbol VDS Drain-Source Voltage 700 V VGS Gate-Source Voltage +30 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V 1 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V 0.8 A 1 IDM Pulsed Drain Current 3 A PD@TC=25℃ Total Power Dissipation 29 W 0.232 W/℃ Linear Derating Factor 2 EAS Single Pulse Avalanche Energy 0.5 mJ TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance, Junction-case 4 Value Units 4.3 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient 110 ℃/W Data & specifications subject to change without notice 1 201305283 AP01L60H/J-H o Electrical Characteristics@Tj=25 C(unless otherwise specified) Symbol Parameter Test Conditions VGS=0V, ID=1mA Min. Typ. Max. Units 700 - - V BVDSS Drain-Source Breakdown Voltage ΔBVDSS/ΔTj Breakdown Voltage Temperature Coefficient Reference to 25℃, ID=1mA - 0.8 - V/℃ RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=0.4A - - 12 Ω VGS(th) Gate Threshold Voltage VDS=VGS, ID=250uA 2 - 4 V gfs Forward Transconductance VDS=10V, ID=0.5A - 0.8 - S IDSS Drain-Source Leakage Current VDS=600V, VGS=0V - - 10 uA Drain-Source Leakage Current (Tj=150 C) VDS=480V, VGS=0V - - 100 uA Gate-Source Leakage VGS=+30V, VDS=0V - - +100 nA o IGSS 3 Qg Total Gate Charge ID=1A - 4.0 - nC Qgs Gate-Source Charge VDS=480V - 1.0 - nC Qgd Gate-Drain ("Miller") Charge VGS=10V - 1.1 - nC - 6.6 - ns 3 td(on) Turn-on Delay Time VDD=300V tr Rise Time ID=1A - 5.0 - ns td(off) Turn-off Delay Time RG=3.3Ω,VGS=10V - 11.7 - ns tf Fall Time RD=300Ω - 9.2 - ns Ciss Input Capacitance VGS=0V - 170 - pF Coss Output Capacitance VDS=25V - 30.7 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 5.1 - pF Min. Typ. - - 1 A - - 5 A - - 1.2 V Source-Drain Diode Symbol IS ISM VSD Parameter Test Conditions VD=VG=0V , VS=1.2V Continuous Source Current ( Body Diode ) 1 Pulsed Source Current ( Body Diode ) 3 Forward On Voltage Tj=25℃, IS=1A, VGS=0V Max. Units Notes: 1.Pulse width limited by Max. junction temperature. 2.Starting Tj=25oC , VDD=50V , L=1.0mH , RG=25Ω , IAS=1.0A. 3.Pulse test 4.Surface mounted on 1 in2 copper pad of FR4 board THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION. USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED. APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. 2 AP01L60H/J-H 1.0 1.5 o T C =150 C o 10V 6.0V 5.5V 5.0V 1.0 0.5 10V 5.0V 0.8 ID , Drain Current (A) ID , Drain Current (A) T C =25 C V G =4.5V 0.0 4.5V 0.5 V G =4.0V 0.3 0.0 0 12 24 36 0 V DS , Drain-to-Source Voltage (V) 10 20 30 40 V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 3 1.2 Normalized RDS(ON) Normalized BVDSS (V) I D =0.5A V G =10V 1.1 1 0.9 2 1 0 -50 0 50 100 -50 150 T j , Junction Temperature ( C) Fig 3. Normalized BVDSS v.s. Junction 100 150 v.s. Junction Temperature 3.5 1 3.0 VGS(th) (V) 10 IS (A) 50 Fig 4. Normalized On-Resistance Temperature T j = 150 o C 0 T j , Junction Temperature ( o C ) o T j = 25 o C 0.1 2.5 0.01 2.0 0 0.4 0.8 1.2 V SD , Source-to-Drain Voltage (V) Fig 5. Forward Characteristic of Reverse Diode 1.6 -50 0 50 100 150 T j , Junction Temperature ( o C ) Fig 6. Gate Threshold Voltage v.s. Junction Temperature 3 AP01L60H/J-H f=1.0MHz 1000 I D =1A V DS =480V 12 C iss 100 C (pF) VGS , Gate to Source Voltage (V) 16 8 C oss 10 4 C rss 0 1 0 1.5 3 4.5 6 1 5 Q G , Total Gate Charge (nC) 9 13 17 21 25 29 V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1 1 ID (A) 100us 1ms 0.1 10ms 100ms DC T c =25 o C Single Pulse Normalized Thermal Response (Rthjc) 10 Duty factor=0.5 0.2 0.1 0.1 0.05 0.02 PDM t 0.01 T Single Pulse Duty Factor = t/T Peak Tj = PDM x Rthjc + T C 0.01 0.01 10 100 1000 0.00001 0.0001 0.001 Fig 9. Maximum Safe Operating Area 0.01 0.1 1 10 t , Pulse Width (s) V DS , Drain-to-Source Voltage (V) Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG 10V QGS QGD 10% VGS td(on) tr td(off) tf Fig 11. Switching Time Waveform Charge Q Fig 12. Gate Charge Waveform 4