Ordering number:ENN6462 N-Channel Silicon MOSFET FTD2022 Load Switching Applications Package Dimensions · Low ON resistance. · 4V drive. · Mounting height 1.1mm. · Composite type, facilitating high-density mounting. unit:mm 2155A [FTD2022] 3.0 0.65 0.425 5 4.5 6.4 0.5 8 0.95 Features 4 1.0 0.25 (0.95) 1 1 : Drain1 2 : Source1 3 : Source1 0.125 4 : Gate1 5 : Gate2 6 : Source2 7 : Source2 8 : Drain2 SANYO : TSSOP8 0.1 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Symbol Drain-to-Source Voltage Gate-to-Source Voltage Conditions Ratings Unit VDSS VGSS 30 V ±20 V ID 4.5 A Drain Current (DC) Drain Current (pulse) IDP PW≤10µs, duty cycle≤1% 20 A Allowable Power Dissipation Mounted on a ceramic board (1000mm2×0.8mm) 1unit 0.8 W Total Dissipation PD PT 1.3 W Channel Temperature Tch 150 ˚C Storage Temperature Tstg –55 to +150 ˚C Mounted on a ceramic board (1000mm2×0.8mm) Electrical Characteristics at Ta = 25˚C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance V(BR)DSS IDSS Conditions ID=1mA, VGS=0 Ratings min typ Unit max 30 V VDS=30V, VGS=0 1 µA ±10 µA 2.4 V IGSS VGS(off) | yfs | VGS=±16V, VDS=0 RDS(on)1 ID=4.5A, VGS=10V 26 34 mΩ RDS(on)2 39 55 mΩ VDS=10V, ID=1mA VDS=10V, ID=4.5A 1.0 5.6 8 S Input Capacitance Ciss ID=4A, VGS=4.5V VDS=10V, f=1MHz 530 pF Output Capacitance Coss VDS=10V, f=1MHz 170 pF Reverse Transfer Capacitance Crss VDS=10V, f=1MHz 90 pF Marking : D2022 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 30100TS (KOTO) TA-2670 No.6462–1/4 FTD2022 Continued from preceding page. Parameter Symbol Turn-ON Delay Time min typ Unit max td(on) See Specified Test Circuit 9 ns tr See Specified Test Circuit 73 ns td(off) See Specified Test Circuit 41 ns tf See Specified Test Circuit 54 ns 10 nC 1.5 nC Rise Time Turn-OFF Delay Time Ratings Conditions Fall Time Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain "Miller" Charge Qgd Diode Forward Voltage VSD VDS=10V, VGS=10V, ID=4.5A 1.0 IS=4.5A, VGS=0 Switching Time Test Circuit nC 0.79 1.2 V Electrical Connection VDD=15V 10V 0V D2 S2 S2 G2 Vin ID=4.5A RL=3.33Ω D Vin PW=10µs D.C.≤1% VOUT G P.G 50Ω FTD2022 S D1 S1 S1 G1 ID -- VDS V VDS=10V 9 3 VGS=2.5V 4 3 2 2 1 1 0 0 5°C --25° C 4 5 C 5 6 25° 6 7 Ta= 7 V 3.0 Drain Current, ID – A 5V V 8 3. 7 4.5 Drain Current, ID – A 8 8.0V 9 ID -- VGS 10 6.0 10.0V 10 (Top view) 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Drain-to-Source Voltage, VDS – V 0.9 0 1.0 1.0 1.5 2.0 2.5 3.0 3.5 Gate-to-Source Voltage, VGS – V RDS(on) -- VGS 60 0.5 IT00557 4.0 IT00558 RDS(on) -- Ta 60 Ta=25°C Static Drain-to-Source On-State Resistance, RDS(on) – mΩ Static Drain-to-Source On-State Resistance, RDS(on) – mΩ 55 50 45 ID=4.5A 40 4.0A 35 30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 Gate-to-Source Voltage, VGS – V 18 20 IT00559 5V 50 4. S= , VG 0A 4. I D= 40 0V 10. S= , VG 4.5A 30 I D= 20 10 0 --50 --25 0 25 50 75 100 Ambient Temperature, Ta – °C 125 150 IT00560 No.6462-2/4 yfs -- ID 3 Ta 25° C 3 75°C 2 1.0 7 5 3 2 0.1 0.1 2 3 5 7 2 1.0 3 5 Drain Current, ID – A 7 10 IT00561 0.1 7 5 3 2 0.01 7 5 3 2 0.001 0.2 Gate-to-Source Voltage, VGS – V Ciss 5 3 2 Coss 100 0.4 0.5 Crss 7 5 3 2 0.6 0.7 0.8 0.9 1.0 1.1 1.2 IT00562 VGS -- Qg 10 VDS=10V ID=4.5A f=1MHz 7 0.3 Diode Forward Voltage, VSD – V Ciss, Coss, Crss -- VDS 1000 Ciss, Coss, Crss – pF 1.0 7 5 3 2 C 5°C =--2 --25° 10 7 5 VGS=0 25°C 2 IF -- VSD 10 7 5 3 2 VDS=10V Ta=7 5°C 100 7 5 Forward Current, IF – A Forward Transfer Admittance, | yfs | – S FTD2022 9 8 7 6 5 4 3 2 1 0 0 10 0 5 10 15 20 Drain-to-Source Voltage, VDS – V 3 2 Drain Current, ID – A Switching Time, SW Time – ns 100 7 5 3 2 VDD=15V VGS=10V 100 7 5 td(off) tr 3 2 td(on) 10 7 5 tf 3 2 1.0 0.1 2 3 5 7 2 1.0 3 Drain Current, ID – A 1 2 IT00563 SW Time -- ID 1000 7 5 5 7 10 IT00565 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 3 4 5 6 7 8 Total Gate Charge, Qg – nC 9 10 IT00564 ASO IDP=20A <10µs 1m ID=4.5A 10 ms 10 DC Operation in this area is limited by RDS(on). Ta=25°C Single pulse 1 unit 0m op er s 100µs s ati on 0.01 Mounted on a ceramic board (1000mm ×0.8mm) 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 2 Drain-to-Source Voltage, VDS – V 5 7 100 IT00566 PD -- Ta 1.5 Allowable Power Dissipation, PD – W 30 25 Mounted on a ceramic board (1000mm2×0.8mm) 1.3 1.0 To tal Di ss 0.8 1u 0.5 ip ati on nit 0 0 20 40 60 80 100 120 Ambient Temperature, Ta – °C 140 160 IT00567 No.6462-3/4 FTD2022 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of March, 2000. Specifications and information herein are subject to change without notice. PS No.6462-4/4