Diodes SMD Type Switching Diodes DAP202K (KAP202K) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 1 0.55 ● High reliability +0.1 1.3 -0.1 +0.1 2.4 -0.1 ● Ultra high speed switching 0.4 3 ■ Features 2 +0.1 0.95 -0.1 +0.1 1.9 -0.1 0-0.1 2 1 +0.1 0.38 -0.1 +0.1 0.97 -0.1 3 +0.05 0.1 -0.01 ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Reverse Voltage Parameter VRM 80 Reverse Voltage (DC) VR 80 Average rectified forward current (Single) Forward Current (Single) Forward Current (Double) Surge current (t=1us) (Single) Surge current (t=1us) (Double) Power Dissipation Thermal Resistance Junction to Ambient Junction Temperature Storage Temperature range V 100 Io Average rectified forward current (double) Unit 150 300 IFM mA 450 4 Isurge 6 A Pd 200 mW RθJA 556 ℃/W TJ 150 Tstg -55 to 150 ℃ ■ Electrical Characteristics Ta = 25℃ Parameter Symbol Test Conditions Min Typ Max Unit Reverse breakdown voltage VR IR= 100 uA Forward voltage VF IF= 100 mA 1.2 Reverse voltage leakage current IR VR= 70 V 0.1 uA Capacitance between terminals Ct VR= 6 V, f= 1 MHz 3.5 pF Reverse recovery time trr VR=6V,IF=5mA, RL=50Ω 4 ns 80 V ■ Marking Marking P* www.kexin.com.cn 1 Diodes SMD Type Switching Diodes DAP202K (KAP202K) ■ Typical Characterisitics Ta=150℃ 10000 Ta=125℃ 10 Ta=25℃ Ta=150℃ Ta=-25℃ 1 0 f=1MHz 1000 Ta=75℃ 100 Ta=25℃ 10 Ta=-25℃ 1 0.1 100 200 300 400 500 600 700 800 900 1000 950 1 0.1 0 FORWARD VOLTAGE：VF(mV) VF-IF CHARACTERISTICS 10 20 30 40 50 60 70 REVERSE VOLTAGE：VR(V) VR-IR CHARACTERISTICS 80 0 Ta=25℃ VR=80V n=30pcs 90 930 920 910 80 9 CAPACITANCE BETWEEN TERMINALS:Ct(pF) 940 70 60 50 40 AVE:9.655nA 30 20 AVE:921.7m 900 7 6 5 4 AVE:1.17pF 3 2 1 0 0 IR DISPERSION MAP Ct DISPERSION MAP 10 10 5 AVE:3.50A 8 7 6 PEAK SURGE FORWARD CURRENT:IFSM(A) 8.3ms 5 Ta=25℃ VR=6V IF=5mA RL=50Ω n=10pcs 9 REVERSE RECOVERY TIME:trr(ns) 1cyc Ifsm 15 5 4 3 2 1 0 Ifsm 4 8.3ms 8.3ms 1cyc 3 2 1 AVE:1.93ns 0 0 1 IFSM DISPERSION MAP trr DISPERSION MAP t 10 1 0.1 2 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS www.kexin.com.cn 100 Rth(j-a) 100 Rth(j-c) Mounted on epoxy board IM=100mA 10 1ms IF=10A time 8 7 6 5 4 2 0 0.01 0.1 1 10 100 TIME:t(ms) Rth-t CHARACTERISTICS AVE:2.54kV 3 AVE:0.97kV 1 300us 1 0.001 9 ELECTROSTATIC DISCHARGE TEST ESD(KV) Ifsm 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 10 1000 TRANSIENT THAERMAL IMPEDANCE:Rth (℃/W) PEAK SURGE FORWARD CURRENT:IFSM(A) 100 20 Ta=25℃ VR=6V f=1MHz n=10pcs 8 10 VF DISPERSION MAP 20 5 10 15 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS 10 100 Ta=25℃ IF=100mA n=30pcs REVERSE CURRENT:IR(nA) FORWARD VOLTAGE:VF(mV) 10 0.01 0.1 PEAK SURGE FORWARD CURRENT:IFSM(A) Ta=125℃ CAPACITANCE BETWEEN TERMINALS:Ct(pF) Ta=75℃ REVERSE CURRENT:IR(nA) FORWARD CURRENT:IF(mA) 100 1000 C=200pF R=0Ω C=100pF R=1.5kΩ ESD DISPERSION MAP 100