PHILIPS CGY2106TS High dynamic range dual lna mmic Datasheet

INTEGRATED CIRCUITS
DATA SHEET
CGY2106TS
High dynamic range dual LNA
MMIC
Preliminary specification
File under Integrated Circuits, IC17
2000 Aug 28
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
FEATURES
GENERAL DESCRIPTION
• Dual Low Noise Amplifier (LNA) Monolithic Microwave
Integrated Circuit (MMIC)
The CGY2106TS is a dual Gallium Arsenide (GaAs) MMIC
amplifier designed for very low noise figure applications,
where high linearity is also required.
• Typical noise figure 0.5 dB
• Typical gain of 16.1 dB at 860 MHz
Excellent tracking between the two amplifiers is obtained.
Gain and noise figure variations are well controlled with
temperature.
• Input IP3 of 14 dBm at 860 MHz
• Low current (78 mA per channel at 2.0 V)
The device is suitable for use in GSM base stations and
other applications where high gain linearity and very low
noise are required.
• Low cost SSOP16 plastic package.
APPLICATIONS
The application board might need to be rematched for
optimum performance.
• GSM base station.
ORDERING INFORMATION
TYPE
NUMBER
CGY2106TS
PACKAGE
NAME
DESCRIPTION
VERSION
SSOP16
plastic shrink small outline package; 16 leads; body width 4.4 mm
SOT369-1
BLOCK DIAGRAM
handbook, full pagewidth
OUT2
16
VG1
VG2
13
12
OUT1
9
CGY2106TS
1, 2,
14, 15
3
4, 5
6
7, 8,
10, 11
FCA108
VS2
IN2 n.c.
IN1
Fig.1 Block diagram.
2000 Aug 28
2
VS1
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
PINNING
SYMBOL
PIN
handbook, halfpage
DESCRIPTION
amplifier 2 source
VS2 1
16 OUT2
VS2 2
15 VS2
IN2 3
14 VS2
VS2
1, 2, 14
and 15
IN2
3
n.c.
4, 5
IN1
6
amplifier 1 input
n.c. 5
12 VG1
VS1
7, 8, 10
and 11
amplifier 1 source
IN1 6
11 VS1
VS1 7
10 VS1
VS1 8
9
amplifier 2 input
n.c. 4
not connected
CGY2106TS
OUT1
9
amplifier 1 drain and output
VG1
12
amplifier 1 gate bias
VG2
13
amplifier 2 gate bias
OUT2
16
amplifier 2 drain and output
13 VG2
OUT1
FCA109
Fig.2 Pin configuration.
LIMITING VALUES
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX. UNIT
VDS
voltage difference between OUT1 drain (OUT2 resp.)
and VS1 source (VS2 resp.) pins
−
5
V
VGS
voltage difference between VG1 gate (VG2 resp.) and
VS1 source (VS2 resp.) pins
−3
+1
V
VGD
voltage difference between gate VG1 (VG2 resp.) and
OUT1 drain (OUT2 resp.) pins
−
7
V
Vsupply
positive supply voltage
see Chapter “Test and −
application information”
6
V
Vneg
negative supply voltage
see Chapter “Test and −6
application information”
−
V
Tamb
ambient temperature
−40
+85
°C
Tch
operating channel temperature
−
150
°C
Tstg
storage temperature
−
150
°C
Ptot
total power dissipation
−
430
mW
Tamb < 85 °C
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
2000 Aug 28
PARAMETER
thermal resistance from junction to ambient
3
VALUE
UNIT
150
K/W
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
DC CHARACTERISTICS FROM JUNCTION TO AMBIENT
Tamb = 25 °C; unless otherwise specified. Parameters are guaranteed when using external components and application
board shown in Chapter “Test and application information”.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
Isupply
positive supply voltage currents (for each LNA)
Vsupply = 5.0 V;
Vneg = −5.0 V
64
78
86
mA
Ineg
negative supply voltage currents (for each LNA)
Vsupply = 5.0 V;
Vneg = −5.0 V
−
0.8
1.1
mA
AC CHARACTERISTICS
Vsupply = 5.0 V; Vneg = −5.0 V; both LNAs biased and Zo = 50 Ω; duty cycle 100%; Tamb = 25 °C. Parameters are
guaranteed when using external components and application board shown in chapter “Test and application information”;
unless otherwise specified.
SYMBOL
f
PARAMETER
CONDITIONS
frequency
MIN.
TYP. MAX. UNIT
800
−
920
MHz
G
small signal gain
14.6
16.1
17.6
dB
G800
small signal gain at f = 800 MHz
15.8
16.7
17.6
dB
ISOr
reverse isolation
18
20
−
dB
ISOi-i
isolation between inputs
25
28
−
dB
NF
noise figure
−
0.5
0.7
dB
IP3i
input third order intercept point
∆f = ±0.5 MHz
11.5
14
−
dBm
S11
input reflection coefficient
50 Ω source
−
−8.5
−
dB
S22
output reflection coefficient
50 Ω load
−
−20
−
dB
∆S21(T)
small signal gain variation with temperature
−40 °C Tamb < +85 °C
−
±0.5
−
dB
∆NF(T)
noise figure variation with temperature
−40 °C < Tamb +85 °C
−
±0.20 −
dB
∆IP3i(T)
input third order intercept point variation with
temperature
−40 °C < Tamb < +85 °C
−
±0.40 −
dB
2000 Aug 28
4
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
TEST AND APPLICATION INFORMATION
Vsupply
handbook, full pagewidth
Vsupply
Vneg
R2
R4
R3
R6
R5
R1
C2
C1
TRL6
C4
TRL5
C3
L1
L2
C6
C5
C8
C7
OUT1
OUT2
16
15
14
13
12
11
10
9
6
7
8
CGY2106TS
1
2
3
4, 5
n.c.
TRL4
TRL3
TRL2
TRL1
IN2
IN1
FCA110
The demonstration board has been optimized for a centre frequency of 0.9 GHz.
The MMIC s-parameters (typical values) are available in a range from 0.1 to 6 GHz on request.
Fig.3 Application board schematic.
2000 Aug 28
5
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
Vneg
handbook, full pagewidth
OUT2
Vsupply1
Vsupply2
R2
C2
C4
R4
R6
R1
C1
C3
R5
L2
C6
R3
OUT1
L1
C8
C7
TRL6
TRL5
TRL4
TRL3
TRL2
TRL1
C5
IN2
IN1
FCA199
Designed for a frequency of 0.9 GHz.
Fig.4 Application board layout.
2000 Aug 28
6
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
Table 1
CGY2106TS
Components for layout; see Figs 3 and 4.
COMPONENT
VALUE
REFERENCE
FUNCTION
C1; C2
1 nF
Philips; NPO; 0603
decoupling
C3; C4
100 pF
Philips; NPO; 0603
decoupling
C5; C6
2.2 pF
Philips; NPO; 0603
decoupling
C7; C8
100 pF
Philips; NPO; 0603
decoupling
R1; R2
39 Ω
Bourns; 0805
drain biasing resistor
R3; R4
5.6 kΩ
Philips; 0603
gate biasing resistor
R5; R6
3.3 kΩ
Philips; 0603
gate biasing resistor
L1; L2
39 nH
Coilcraft; 0603
drain biasing inductor
Table 2
Transmission lines for layout; see Figs 3 and 4.
COMPONENT
ZO
LENGTH
LENGTH(1)
WIDTH(1)
TRL1; TRL2
100 Ω
0.040λ at 900 MHz
10 mm
0.25 mm
TRL3; TRL4
70 Ω
0.033λ at 900 MHz
5 mm
0.80 mm
TRL5; TRL6
70 Ω
0.035λ at 900 MHz
4.4 mm
0.80 mm
Note
1. Transmission line lengths and widths in mm are valid for a double sided PCB; thickness 0.8 mm in FR4 material
(ε = 4.7).
2000 Aug 28
7
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
Measured performance of the demonstration board (designed for a centre frequency of 0.9 GHz).
FCA112
20
G
(dB)
FCA113
2
handbook, halfpage
handbook, halfpage
NF
(dB)
16
1.6
12
1.2
8
0.8
4
0.4
0
0.5
0.7
0.9
1.1
1.3
0
0.5
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
0.7
0.9
1.1
1.3
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
Fig.5 Gain as a function of frequency.
Fig.6 Noise figure as a function of frequency.
FCA114
0
FCA115
20
handbook, halfpage
handbook, halfpage
S21
(dB)
16
S11
(dB)
−5
12
8
−10
4
−15
0.5
0.7
0.9
1.1
1.3
0
0.5
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
0.9
1.1
1.3
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
Fig.7 S11 as a function of frequency.
2000 Aug 28
0.7
Fig.8 S21 as a function of frequency.
8
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
FCA116
0
FCA117
0
handbook, halfpage
handbook, halfpage
S12
(dB)
−5
S22
(dB)
−5
−10
−10
−15
−15
−20
−20
−25
0.5
0.7
0.9
1.1
1.3
−25
0.5
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
0.7
0.9
1.1
1.3
1.5
f (GHz)
Vsupply = 5 V; Vneg = −5 V.
Fig.9 S12 as a function of frequency.
Fig.10 S22 as a function of frequency.
FCA118
0
FCA119
20
handbook, halfpage
handbook, halfpage
ISOi-i
Po
(dBm)
(dB)
−10
10
−20
0
−30
−40
0.5
0.7
0.9
1.1
−10
−20
1.5
1.3
f (GHz)
−10
0
Pi (dBm)
10
Vsupply = 5 V; Vneg = −5 V.
Vsupply = 5 V; Vneg = −5 V.
Fig.11 Isolation between RF inputs as a function of
frequency.
Fig.12 RF output power as a function of RF input
power.
2000 Aug 28
9
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
PACKAGE OUTLINE
SSOP16: plastic shrink small outline package; 16 leads; body width 4.4 mm
D
SOT369-1
E
A
X
c
y
HE
v M A
Z
9
16
Q
A2
A
(A 3)
A1
pin 1 index
θ
Lp
L
1
8
detail X
w M
bp
e
0
2.5
5 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
max.
A1
A2
A3
bp
c
D (1)
E (1)
e
HE
L
Lp
Q
v
w
y
Z (1)
θ
mm
1.5
0.15
0.00
1.4
1.2
0.25
0.32
0.20
0.25
0.13
5.30
5.10
4.5
4.3
0.65
6.6
6.2
1.0
0.75
0.45
0.65
0.45
0.2
0.13
0.1
0.48
0.18
10
0o
Note
1. Plastic or metal protrusions of 0.20 mm maximum per side are not included.
OUTLINE
VERSION
SOT369-1
2000 Aug 28
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
95-02-04
99-12-27
MO-152
10
o
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
SOLDERING
If wave soldering is used the following conditions must be
observed for optimal results:
Introduction to soldering surface mount packages
• Use a double-wave soldering method comprising a
turbulent wave with high upward pressure followed by a
smooth laminar wave.
This text gives a very brief insight to a complex technology.
A more in-depth account of soldering ICs can be found in
our “Data Handbook IC26; Integrated Circuit Packages”
(document order number 9398 652 90011).
• For packages with leads on two sides and a pitch (e):
– larger than or equal to 1.27 mm, the footprint
longitudinal axis is preferred to be parallel to the
transport direction of the printed-circuit board;
There is no soldering method that is ideal for all surface
mount IC packages. Wave soldering is not always suitable
for surface mount ICs, or for printed-circuit boards with
high population densities. In these situations reflow
soldering is often used.
– smaller than 1.27 mm, the footprint longitudinal axis
must be parallel to the transport direction of the
printed-circuit board.
Reflow soldering
The footprint must incorporate solder thieves at the
downstream end.
Reflow soldering requires solder paste (a suspension of
fine solder particles, flux and binding agent) to be applied
to the printed-circuit board by screen printing, stencilling or
pressure-syringe dispensing before package placement.
• For packages with leads on four sides, the footprint must
be placed at a 45° angle to the transport direction of the
printed-circuit board. The footprint must incorporate
solder thieves downstream and at the side corners.
Several methods exist for reflowing; for example,
infrared/convection heating in a conveyor type oven.
Throughput times (preheating, soldering and cooling) vary
between 100 and 200 seconds depending on heating
method.
During placement and before soldering, the package must
be fixed with a droplet of adhesive. The adhesive can be
applied by screen printing, pin transfer or syringe
dispensing. The package can be soldered after the
adhesive is cured.
Typical reflow peak temperatures range from
215 to 250 °C. The top-surface temperature of the
packages should preferable be kept below 230 °C.
Typical dwell time is 4 seconds at 250 °C.
A mildly-activated flux will eliminate the need for removal
of corrosive residues in most applications.
Wave soldering
Manual soldering
Conventional single wave soldering is not recommended
for surface mount devices (SMDs) or printed-circuit boards
with a high component density, as solder bridging and
non-wetting can present major problems.
Fix the component by first soldering two
diagonally-opposite end leads. Use a low voltage (24 V or
less) soldering iron applied to the flat part of the lead.
Contact time must be limited to 10 seconds at up to
300 °C.
To overcome these problems the double-wave soldering
method was specifically developed.
When using a dedicated tool, all other leads can be
soldered in one operation within 2 to 5 seconds between
270 and 320 °C.
2000 Aug 28
11
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
Suitability of surface mount IC packages for wave and reflow soldering methods
SOLDERING METHOD
PACKAGE
WAVE
BGA, LFBGA, SQFP, TFBGA
not suitable
suitable(2)
HBCC, HLQFP, HSQFP, HSOP, HTQFP, HTSSOP, SMS
not
PLCC(3), SO, SOJ
suitable
LQFP, QFP, TQFP
SSOP, TSSOP, VSO
REFLOW(1)
suitable
suitable
suitable
not
recommended(3)(4)
suitable
not
recommended(5)
suitable
Notes
1. All surface mount (SMD) packages are moisture sensitive. Depending upon the moisture content, the maximum
temperature (with respect to time) and body size of the package, there is a risk that internal or external package
cracks may occur due to vaporization of the moisture in them (the so called popcorn effect). For details, refer to the
Drypack information in the “Data Handbook IC26; Integrated Circuit Packages; Section: Packing Methods”.
2. These packages are not suitable for wave soldering as a solder joint between the printed-circuit board and heatsink
(at bottom version) can not be achieved, and as solder may stick to the heatsink (on top version).
3. If wave soldering is considered, then the package must be placed at a 45° angle to the solder wave direction.
The package footprint must incorporate solder thieves downstream and at the side corners.
4. Wave soldering is only suitable for LQFP, TQFP and QFP packages with a pitch (e) equal to or larger than 0.8 mm;
it is definitely not suitable for packages with a pitch (e) equal to or smaller than 0.65 mm.
5. Wave soldering is only suitable for SSOP and TSSOP packages with a pitch (e) equal to or larger than 0.65 mm; it is
definitely not suitable for packages with a pitch (e) equal to or smaller than 0.5 mm.
2000 Aug 28
12
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
DATA SHEET STATUS
DATA SHEET STATUS
PRODUCT
STATUS
DEFINITIONS (1)
Objective specification
Development
This data sheet contains the design target or goal specifications for
product development. Specification may change in any manner without
notice.
Preliminary specification
Qualification
This data sheet contains preliminary data, and supplementary data will be
published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.
Product specification
Production
This data sheet contains final specifications. Philips Semiconductors
reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.
Note
1. Please consult the most recently issued data sheet before initiating or completing a design.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2000 Aug 28
13
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
NOTES
2000 Aug 28
14
Philips Semiconductors
Preliminary specification
High dynamic range dual LNA MMIC
CGY2106TS
NOTES
2000 Aug 28
15
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Tel. +66 2 361 7910, Fax. +66 2 398 3447
Turkey: Yukari Dudullu, Org. San. Blg., 2.Cad. Nr. 28 81260 Umraniye,
ISTANBUL, Tel. +90 216 522 1500, Fax. +90 216 522 1813
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 208 730 5000, Fax. +44 208 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381, Fax. +1 800 943 0087
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 3341 299, Fax.+381 11 3342 553
For all other countries apply to: Philips Semiconductors,
Marketing Communications, Building BE-p, P.O. Box 218, 5600 MD EINDHOVEN,
The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
SCA 70
© Philips Electronics N.V. 2000
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Printed in The Netherlands
403506/01/pp16
Date of release: 2000
Aug 28
Document order number:
9397 750 07171