Sirectifier MBR2050CT High tjm low irrm schottky barrier diode Datasheet

MBR2050CT thru MBR2060CT
High Tjm Low IRRM Schottky Barrier Diodes
A
C
A
Dimensions TO-220AB
A
C
A
C(TAB)
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
A=Anode, C=Cathode, TAB=Cathode
MBR2050CT
MBR2060CT
VRRM
V
50
60
VRMS
V
35
42
Symbol
VDC
V
50
60
Characteristics
20
A
150
A
10000
V/us
@TJ=25oC
@TJ=125oC
@TJ=25oC
@TJ=125oC
0.80
0.70
0.95
0.85
V
@TJ=25oC
@TJ=125oC
0.1
15
mA
@TC=125oC
IFSM
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
Voltage Rate Of Change (Rated VR)
VF
Maximum Forward
Voltage (Note 1)
IR
Maximum DC Reverse Current
At Rated DC Blocking Voltage
Typical Thermal Resistance (Note 2)
2.0
CJ
Typical Junction Capacitance Per Element (Note 3)
400
TJ
Operating Temperature Range
ROJC
TSTG
Milimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Unit
Maximum Average Forward Rectified Current
IF=10A
IF=10A
IF=20A
IF=20A
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
Maximum Ratings
I(AV)
dv/dt
Dim.
Storage Temperature Range
o
C/W
pF
-55 to +150
o
-55 to +175
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
FEATURES
MECHANICAL DATA
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
* RoHS compliant
* Case: TO-220AB molded plastic
* Polarity: As marked on the body
* Weight: 2 grams
* Mounting position: Any
P1
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
C
C
MBR2050CT thru MBR2060CT
High Tjm Low IRRM Schottky Barrier Diodes
15
10
5
RESISTIVE OR
INDUCTIVE LOAD
0
25
50
75
100
125
150
FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD CURRENT
AMPERES
FIG.1 - FORWARD CURRENT DERATING CURVE
20
150
125
100
175
75
50
25
8.3ms Single Half-Sine-Wave
(JEDEC METHOD)
0
1
2
5
CASE TEMPERATURE , C
FIG.3 - TYPICAL REVERSE CHARACTERISTICS
50
100
FIG.4 - TYPICAL FORWARD CHARACTERISTICS
1000
100
INSTANTANEOUS FORWARD CURRENT ,(A)
INSTANTANEOUS REVERSE CURRENT ,(mA)
20
10
NUMBER OF CYCLES AT 60Hz
100
TJ = 100 C
10
1.0
TJ = 75 C
0.1
TJ = 25 C
0.01
10
1.0
TJ = 25 C
PULSE WIDTH 300us
2% Duty cycle
0.1
0
20
40
60
80
100
120
140
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
INSTANTANEOUS FORWARD VOLTAGE , VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
FIG.5 - TYPICAL JUNCTION CAPACITANCE
10000
CAPACITANCE , (pF)
TJ = 25 C, f= 1MHz
1000
100
0.1
1
4
10
100
REVERSE VOLTAGE , VOLTS
P2
©2008 SIRECTIFIER All rights reserved,
Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected]
www.sirectifier.com
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