MBR2050CT thru MBR2060CT High Tjm Low IRRM Schottky Barrier Diodes A C A Dimensions TO-220AB A C A C(TAB) A B C D E F G H J K M N Q R A=Anode, C=Cathode, TAB=Cathode MBR2050CT MBR2060CT VRRM V 50 60 VRMS V 35 42 Symbol VDC V 50 60 Characteristics 20 A 150 A 10000 V/us @TJ=25oC @TJ=125oC @TJ=25oC @TJ=125oC 0.80 0.70 0.95 0.85 V @TJ=25oC @TJ=125oC 0.1 15 mA @TC=125oC IFSM Peak Forward Surge Current 8.3ms Single Half-Sine-Wave Superimposed On Rated Load (JEDEC METHOD) Voltage Rate Of Change (Rated VR) VF Maximum Forward Voltage (Note 1) IR Maximum DC Reverse Current At Rated DC Blocking Voltage Typical Thermal Resistance (Note 2) 2.0 CJ Typical Junction Capacitance Per Element (Note 3) 400 TJ Operating Temperature Range ROJC TSTG Milimeter Min. Max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 BSC 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 Unit Maximum Average Forward Rectified Current IF=10A IF=10A IF=20A IF=20A Inches Min. Max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 BSC 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 Maximum Ratings I(AV) dv/dt Dim. Storage Temperature Range o C/W pF -55 to +150 o -55 to +175 o NOTES: 1. 300us Pulse Width, Duty Cycle 2%. 2. Thermal Resistance Junction To Case. 3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC. FEATURES MECHANICAL DATA * Metal of silicon rectifier, majority carrier conducton * Guard ring for transient protection * Low power loss, high efficiency * High current capability, low VF * High surge capacity * For use in low voltage, high frequency inverters, free whelling, and polarity protection applications * RoHS compliant * Case: TO-220AB molded plastic * Polarity: As marked on the body * Weight: 2 grams * Mounting position: Any P1 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com C C MBR2050CT thru MBR2060CT High Tjm Low IRRM Schottky Barrier Diodes 15 10 5 RESISTIVE OR INDUCTIVE LOAD 0 25 50 75 100 125 150 FIG.2 - MAXIMUM NON-REPETITIVE SURGE CURRENT PEAK FORWARD SURGE CURRENT, AMPERES AVERAGE FORWARD CURRENT AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE 20 150 125 100 175 75 50 25 8.3ms Single Half-Sine-Wave (JEDEC METHOD) 0 1 2 5 CASE TEMPERATURE , C FIG.3 - TYPICAL REVERSE CHARACTERISTICS 50 100 FIG.4 - TYPICAL FORWARD CHARACTERISTICS 1000 100 INSTANTANEOUS FORWARD CURRENT ,(A) INSTANTANEOUS REVERSE CURRENT ,(mA) 20 10 NUMBER OF CYCLES AT 60Hz 100 TJ = 100 C 10 1.0 TJ = 75 C 0.1 TJ = 25 C 0.01 10 1.0 TJ = 25 C PULSE WIDTH 300us 2% Duty cycle 0.1 0 20 40 60 80 100 120 140 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 INSTANTANEOUS FORWARD VOLTAGE , VOLTS PERCENT OF RATED PEAK REVERSE VOLTAGE (%) FIG.5 - TYPICAL JUNCTION CAPACITANCE 10000 CAPACITANCE , (pF) TJ = 25 C, f= 1MHz 1000 100 0.1 1 4 10 100 REVERSE VOLTAGE , VOLTS P2 ©2008 SIRECTIFIER All rights reserved, Tel: +86-519-86800000 Fax: +86-519-88019019 E-mail: [email protected] www.sirectifier.com