MOTOROLA MRF5S21090L Rf power field effect transistor Datasheet

MOTOROLA
Freescale Semiconductor, Inc.
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by MRF5S21090L/D
SEMICONDUCTOR TECHNICAL DATA
The RF MOSFET Line
RF Power Field Effect Transistors MRF5S21090LR3
Freescale Semiconductor, Inc...
N - Channel Enhancement - Mode Lateral MOSFETs MRF5S21090LSR3
Designed for W- CDMA base station applications with frequencies from 2110
to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L
applications.
• Typical 2 - carrier W - CDMA Performance for VDD = 28 Volts,
IDQ = 850 mA, f1 = 2135 MHz, f2 = 2145 MHz, Channel Bandwidth =
3.84 MHz, Adjacent Channels Measured over 3.84 MHz BW @ f1 - 5 MHz
and f2 +5 MHz, Distortion Products Measured over a 3.84 MHz BW
@ f1 - 10 MHz and f2 +10 MHz, Peak/Avg. = 8.5 dB @ 0.01% Probability
on CCDF.
Output Power — 19 Watts Avg.
Power Gain — 14.5 dB
Efficiency — 26%
IM3 — - 37.5 dBc
ACPR — - 40.5 dBc
• Internally Matched, Controlled Q, for Ease of Use
• High Gain, High Efficiency and High Linearity
• Integrated ESD Protection
• Designed for Maximum Gain and Insertion Phase Flatness
• Capable of Handling 10:1 VSWR, @ 28 Vdc, 2140 MHz, 90 Watts CW
Output Power
• Excellent Thermal Stability
• Characterized with Series Equivalent Large - Signal Impedance Parameters
• Qualified Up to a Maximum of 32 VDD Operation
• Available with Low Gold Plating Thickness on Leads. L Suffix Indicates
40µ″ Nominal.
• In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
2170 MHz, 19 W AVG.,
2 x W - CDMA, 28 V
LATERAL N - CHANNEL
RF POWER MOSFETs
CASE 465 - 06, STYLE 1
NI - 780
MRF5S21090LR3
CASE 465A - 06, STYLE 1
NI - 780S
MRF5S21090LSR3
MAXIMUM RATINGS
Symbol
Value
Unit
Drain- Source Voltage
Rating
VDSS
65
Vdc
Gate- Source Voltage
VGS
- 0.5, +15
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
224
1.28
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
200
°C
Symbol
Value (1,2)
Unit
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Case Temperature 80°C, 90 W CW
Case Temperature 80°C, 19 W CW
RθJC
0.78
0.80
°C/W
(1) MTTF calculator available at http://www.motorola.com/semiconductors/rf. Select Tools/Software/Application Software/Calculators to
access the MTTF calculators by product.
(2) Refer to AN1955/D, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.motorola.com/semiconductors/rf.
Select Documentation/Application Notes - AN1955.
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 1
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2004
MRF5S21090LR3 MRF5S21090LSR3
1
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ESD PROTECTION CHARACTERISTICS
Test Conditions
Class
Human Body Model
1 (Minimum)
Machine Model
M3 (Minimum)
Charge Device Model
C7 (Minimum)
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 28 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate- Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 200 µAdc)
VGS(th)
2.5
2.9
3.5
Vdc
Gate Quiescent Voltage
(VDS = 28 Vdc, ID = 850 mAdc)
VGS(Q)
—
3.9
—
Vdc
Drain- Source On - Voltage
(VGS = 10 Vdc, ID = 2 Adc)
VDS(on)
—
0.25
—
Vdc
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
gfs
—
5
—
S
Crss
—
1.7
—
pF
Characteristic
Freescale Semiconductor, Inc...
OFF CHARACTERISTICS
ON CHARACTERISTICS (DC)
DYNAMIC CHARACTERISTICS (1)
Reverse Transfer Capacitance
(VDS = 28 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
FUNCTIONAL TESTS (In Motorola Test Fixture, 50 ohm system) 2 - carrier W - CDMA, 3.84 MHz Channel Bandwidth Carriers, ACPR and
IM3 measured in 3.84 MHz Bandwidth. Peak/Avg. = 8.5 dB @ 0.01% Probability on CCDF.
Common- Source Amplifier Power Gain
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
Gps
12.5
14.5
—
dB
Drain Efficiency
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
η
24
26
—
%
3rd Order Intermodulation Distortion
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; IM3
measured over 3.84 MHz BW at f1 - 10 MHz and f2 +10 MHz
referenced to carrier channel power.)
IM3
—
- 37.5
- 35
dBc
Adjacent Channel Power Ratio
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz; ACPR
measured over 3.84 MHz at f1 - 5 MHz and f2 +5 MHz.)
ACPR
—
- 40.5
- 38
dBc
Input Return Loss
(VDD = 28 Vdc, Pout = 19 W Avg., IDQ = 850 mA, f1 = 2112.5 MHz,
f2 = 2122.5 MHz and f1 = 2157.5 MHz, f2 = 2167.5 MHz)
IRL
—
- 15
-9
dB
(1) Part is internally matched both on input and output.
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
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C3
R1
R4
R3
VGG
C4
R2
C7
C10
C5
C8
C11
+
C13
C12
VDD
W1
C9
Z4
RF
INPUT
Z1
Z2
C14
Z3
Z8
Z6
Z13
Z9
C6
DUT
Z10
Z18
Z15
Z11 Z12
Z7
Z16
C2
C1
Z17
Z20
Z19
Z21
RF
OUTPUT
C15
Z14
Freescale Semiconductor, Inc...
Z5
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
Z11
1.0856″ x 0.080″ Microstrip
0.130″ x 0.080″ Microstrip
0.230″ x 0.080″ Microstrip
0.347″ x 0.208″ Microstrip
0.090″ x 0.208″ Microstrip
0.650″ x 0.176″ Taper
0.623″ x 0.610″ Microstrip
0.044″ x 0.881″ Microstrip
0.044″ x 0.869″ Microstrip
1.076″ x 0.446″ Microstrip
0.320″ x 0.393″ Microstrip
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Z19
Z20
Z21
PCB
0.609″ x 0.220″ Microstrip
0.290″ x 0.106″ Microstrip
0.290″ x 0.106″ Microstrip
0.080″ x 0.025″ Microstrip
1.080″ x 0.160″ Microstrip
0.180″ x 0.080″ Microstrip
0.260″ x 0.147″ Microstrip
0.500″ x 0.080″ Microstrip
0.199″ x 0.147″ Microstrip
0.365″ x 0.080″ Microstrip
Arlon GX0300 - 55- 22, 0.03″, εr = 2.55
Figure 1. MRF5S21090 Test Circuit Schematic
Table 1. MRF5S21090 Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
C1
9.1 pF Chip Capacitor, B Case
100B9R1CP 500X
ATC
C2
8.2 pF Chip Capacitor, B Case
100B8R2CP 500X
ATC
C3
2.0 pF Chip Capacitor, B Case
100B2R0BP 500X
ATC
C4, C12
0.1 µF Chip Capacitors, B Case
CDR33BX104AKWS
Kemet
C5
5.6 pF Chip Capacitor, B Case
100B5R6CP 500X
ATC
C6
5.1 pF Chip Capacitor, B Case
100B5R1CP 500X
ATC
C7
7.5 pF Chip Capacitor, B Case
100B7R5JP 500X
ATC
C8
1.2 pF Chip Capacitor, B Case
100B1R2BP 500X
ATC
C9, C10
0.56 µF Chip Capacitors, B Case
700A561MP 150X
ATC
C11
1000 pF Chip Capacitor, B Case
100B102JP 500X
ATC
C13
470 µF, 35 V Electrolytic Capacitor
95F4579
Newark
C14, C15
0.4 – 2.5 Variable Capacitors, Gigatrim
44F3367
Newark
R1
1 kW Chip Resistor
D5534M07B1K00R
Newark
R2
560 kW Chip Resistor
CR1206 564JT
Newark
R3, R4
12 W Chip Resistors
RM73B2B120JT
Garrett Electronics
W1
Wire Strap
MOTOROLA RF DEVICE DATA
MRF5S21090LR3 MRF5S21090LSR3
3
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R1
VGG
C4
R2
C10
C9
R3
C13
C7 C8
C3 C5
C11
C6
VDD
R4 W1
C12
C1
Freescale Semiconductor, Inc...
C14
CUT OUT AREA
C2
C15
MRF5S21090
Rev 5
Figure 2. MRF5S21090 Test Circuit Component Layout
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
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TYPICAL CHARACTERISTICS
η
G ps , POWER GAIN (dB)
13
35
VDD = 28 Vdc, Pout = 19 W (Avg.), IDQ = 850 mA
2−Carrier W−CDMA, 10 MHz Carrier Spacing
30
25
12
3.84 MHz Channel Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
IRL
11
20
10
−20
9
−25
8
−30
IM3
7
6
−35
−40
ACPR
5
2080
2100
2120
2140
2160
−45
2200
2180
−10
−15
−20
−25
−30
−35
IRL, INPUT RETURN LOSS (dB)
14
IM3 (dBc), ACPR (dBc)
Gps
η, DRAIN
EFFICIENCY (%)
40
15
17
IDQ = 1200 mA
G ps , POWER GAIN (dB)
VDD = 28 Vdc f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
1000 mA
15
850 mA
14
650 mA
13
450 mA
IM3, 3RD ORDER
INTERMODULATION DISTORTION (dBc)
−15
16
−20
VDD = 28 Vdc
f1 = 2135 MHz, f2 = 2145 MHz
Two−Tone Measurement, 10 MHz Tone Spacing
−25
−30
IDQ = 450 mA
1200 mA
−35
−40
1000 mA
−45
1
100
10
850 mA
650 mA
−50
12
10
1
Pout, OUTPUT POWER (WATTS) PEP
100
Pout, OUTPUT POWER (WATTS) PEP
Figure 4. Two - Tone Power Gain versus
Output Power
Figure 5. 3rd Order Intermodulation Distortion
versus Output Power
−20
57
−25
Pout , OUTPUT POWER (dBm)
IMD, INTERMODULATION DISTORTION (dBc)
Freescale Semiconductor, Inc...
f, FREQUENCY (MHz)
Figure 3. 2 - Carrier W - CDMA Broadband Performance
3rd Order
−30
−35
5th Order
−40
−45
7th Order
−50
VDD = 28 Vdc, Pout = 90 W (PEP), IDQ = 850 mA
Two−Tone Measurements, Center Frequency = 2140 MHz
−55
−60
0.1
Ideal
55
P3dB = 51.17 dBm (130.9 W)
53
51 P1dB = 50.47 dBm (111.4 W)
Actual
49
VDD = 28 Vdc, IDQ = 850 mA
Pulsed CW, 8 µsec(on), 1 msec(off)
Center Frequency = 2140 MHz
47
45
1
10
30
32
34
36
38
40
TWO−TONE SPACING (MHz)
Pin, INPUT POWER (dBm)
Figure 6. Intermodulation Distortion Products
versus Tone Spacing
Figure 7. Pulse CW Output Power versus
Input Power
MOTOROLA RF DEVICE DATA
42
MRF5S21090LR3 MRF5S21090LSR3
5
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40
VDD = 28 Vdc, IDQ = 850 mA, f1 = 2135 MHz,
f2 = 2145 MHz, 2 x W−CDMA, 10 MHz
@ 3.84 MHz Bandwidth, Peak/Avg. = 8.5 dB
@ 0.01% Probability (CCDF)
−20
−30
η
25
−30
−35
20
Gps
15
−40
IM3
10
ACPR
5
0
1
3.84 MHz
Channel BW
−40
−25
−50
−60
(dB)
30
−20
IM3 (dBc), ACPR (dBc)
35
−15
−70
−80
−90
−50
−110
−ACPR @
+ACPR @
3.84 MHz BW 3.84 MHz BW
−IM3 @
3.84 MHz BW
−55
−120
−25
−20
−45
−100
10
−15
−10
−5
0
5
10
+IM3 @
3.84 MHz BW
15
20
25
f, FREQUENCY (MHz)
Pout, POWER (WATTS) W−CDMA
Figure 9. 2-Carrier W-CDMA Spectrum
Figure 8. 2 - Carrier W - CDMA ACPR, IM3,
Power Gain and Drain Efficiency
versus Output Power
109
MTBF FACTOR (HOURS x AMPS 2 )
100
10
PROBABILITY (%)
Freescale Semiconductor, Inc...
η, DRAIN EFFICIENCY (%), G ps , POWER GAIN (dB)
TYPICAL CHARACTERISTICS
1
0.1
0.01
0.001
0.0001
0
2
4
6
8
10
108
107
106
100
120
140
160
180
200
220
TJ, JUNCTION TEMPERATURE (°C)
PEAK−TO−AVERAGE (dB)
Figure 10. CCDF W - CDMA 3GPP, Test Model 1,
64 DPCH, 67% Clipping, Single Carrier Test Signal
This above graph displays calculated MTBF in hours x ampere2
drain current. Life tests at elevated temperatures have correlated to
better than ±10% of the theoretical prediction for metal failure. Divide
MTBF factor by ID2 for MTBF in a particular application.
Figure 11. MTBF Factor versus Junction Temperature
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
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f = 2200 MHz
f = 2100 MHz
Zo = 10 Ω
Zload
f = 2200 MHz
Freescale Semiconductor, Inc...
f = 2100 MHz
Zsource
VDD = 28 Vdc, IDQ = 850 mA, Pout = 19 W Avg.
f
MHz
Zsource
Ω
Zload
Ω
2100
3.4 - j5.1
2.4 - j2.0
2120
3.2 - j5.4
2.2 - j2.1
2160
3.0 - j4.4
2.1 - j1.9
2200
3.0 - j4.0
1.8 - j1.6
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
= Test circuit impedance as measured
from drain to ground.
Output
Matching
Network
Device
Under
Test
Input
Matching
Network
Z
source
Z
load
Figure 12. Series Equivalent Input and Output Impedance
MOTOROLA RF DEVICE DATA
MRF5S21090LR3 MRF5S21090LSR3
7
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NOTES
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
MRF5S21090LR3 MRF5S21090LSR3
9
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NOTES
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
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PACKAGE DIMENSIONS
B
G
Q
bbb
2X
1
M
T A
M
B
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
M
3
B
K
2
(FLANGE)
D
bbb
T A
M
B
M
M
M
bbb
Freescale Semiconductor, Inc...
N
M
T A
B
M
M
M
ccc
M
T A
M
aaa
M
T A
M
M
T A
B
M
(LID)
B
S
(LID)
ccc
H
R
(INSULATOR)
M
(INSULATOR)
B
M
C
F
E
A
T
A
SEATING
PLANE
4X U
(FLANGE)
1
K
2X
2
B
(FLANGE)
D
bbb
M
T A
M
B
M
N
(LID)
ccc
M
R
M
T A
M
B
M
M
B
M
ccc
M
T A
M
aaa
M
T A
M
S
(INSULATOR)
bbb
M
T A
(LID)
B
M
(INSULATOR)
B
M
H
E
A
A
(FLANGE)
MOTOROLA RF DEVICE DATA
F
T
SEATING
PLANE
DIM
A
B
C
D
E
F
H
K
M
N
R
S
U
Z
aaa
bbb
ccc
INCHES
MIN
MAX
0.805
0.815
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
0.365
0.375
0.365
0.375
−−−
0.040
−−−
0.030
0.005 REF
0.010 REF
0.015 REF
MILLIMETERS
MIN
MAX
20.45
20.70
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
1.45
1.70
4.32
5.33
19.61
20.02
19.61
20.02
9.27
9.53
9.27
9.52
−−−
1.02
−−−
0.76
0.127 REF
0.254 REF
0.381 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
5. SOURCE
C
3
MILLIMETERS
MIN
MAX
33.91
34.16
9.65
9.91
3.18
4.32
12.57
12.83
0.89
1.14
0.08
0.15
27.94 BSC
1.45
1.70
4.32
5.33
19.66
19.96
19.60
20.00
3.00
3.51
9.27
9.53
9.27
9.52
0.127 REF
0.254 REF
0.381 REF
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M−1994.
2. CONTROLLING DIMENSION: INCH.
3. DELETED
4. DIMENSION H IS MEASURED 0.030 (0.762) AWAY
FROM PACKAGE BODY.
4X Z
(LID)
B
INCHES
MIN
MAX
1.335
1.345
0.380
0.390
0.125
0.170
0.495
0.505
0.035
0.045
0.003
0.006
1.100 BSC
0.057
0.067
0.170
0.210
0.774
0.786
0.772
0.788
.118
.138
0.365
0.375
0.365
0.375
0.005 REF
0.010 REF
0.015 REF
STYLE 1:
PIN 1. DRAIN
2. GATE
3. SOURCE
CASE 465 - 06
ISSUE F
NI - 780
MRF5S21090LR3
(FLANGE)
DIM
A
B
C
D
E
F
G
H
K
M
N
Q
R
S
aaa
bbb
ccc
CASE 465A - 06
ISSUE F
NI - 780S
MRF5S21090LSR3
MRF5S21090LR3 MRF5S21090LSR3
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3-20-1, Minami-Azabu, Minato-ku, Tokyo 106-8573, Japan
81-3-3440-3569
ASIA / PACIFIC: Motorola Semiconductors H.K. Ltd.; Silicon Harbour Centre,
2 Dai King Street, Tai Po Industrial Estate, Tai Po, N.T., Hong Kong
852-26668334
HOME PAGE: http://motorola.com/semiconductors
MRF5S21090LR3 MRF5S21090LSR3
MOTOROLA RF DEVICE DATA
◊For More Information On This Product,
MRF5S21090L/D
12
Go to: www.freescale.com
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