KISEMICONDUCTOR BAT46 Small signal schottky diode Datasheet

KI
SEMICONDUCTOR
BAT46
VOLTAGE RANGE: 100 V
CURRENT: 0.15 A
SMALL SIGNAL SCHOTTKY DIODES
FEATURES
For general purpos e applications
Thes e diodes features very low turn-on voltage
and fas t s witching. Thes e devices are protected
by a PN junction guard ring agains t exces s ive
voltage, s uch as electros tatic dis charges
Thes e diodes is ls o available in the SOD - 123 cas e
with type des ignation BAT46W and in the
MiniMELF cas e wyht type des ignations LL46
DO - 35(GLASS)
MECHANICAL DATA
Cas e:JEDEC DO--35,glas s cas e
Polarity: Color band denotes cathode
Weight: Approx. 0.13 gram
ABSOLUTE RATINGS
Parameter
Symbol
Value
UNITS
VR
100.0
V
Repetitive peak reverse voltage
Forw ard continuius current
Pow er dissipation
mA
IFRM
350 1)
mA
IFSM
750
1)
mA
150
1)
mW
@ tamb=25
Repetitive peak f orw ard current @ tp<1s,
Surge f orw ard current
1)
@ tp<10ms,TA=25
@ TA=65
1)
150
IF
<=0.5,TA=25
P tot
Thermal resistance juntion to ambient air
0.3
RθJA
1)
Junction tenperature
TJ
125
Ambient operating temperature range
TA
c-65 ---+ 125
TSTG
c-65 ---+ 150
Storage temperature range
/m W
ELECTRICAL CHARACTERISTICS
Parameter
Reverse breakdow n voltage
Symbol
VR
Test Condition
IR = 100
A(puls ed)
Min.
Typ.
V
VR = 1.5V
0.5
5.0
VR = 10V
s,
<2%
IR
0.8
VR = 10V,Tj=60
7.5
VR = 50V
2.0
VR = 50V,Tj=60
VR = 75V
s,
<2%
Junction capacitance
Thermal resistance junction to ambient air
VF
5.0
IF = 0.1m A
0.25
IF = 10m A
0.45
V
1.0
VR = 0V,f=1MHz
10
VR = 1V,f=1MHz
6
RθJA
A
20.0
IF = 250m A
CJ
a
15.0
VR = 75V,Tj=60
Forw ard voltage
pulse test tp<300
UNITS
100.0
VR = 1.5V,Tj=60
Leakage current
pulse test tp<300
Max.
pF
300 1)
/W
1) Valid prov ided that leads at a distance of 4mm f rom case are kept at ambient temperature
Document Number 0265008
KI SEMICONDUCTOR
1.
RATINGS AND CHARACTERISTIC CURVES
BAT46
FIG.1 -- FORWARD CURRENT VERSUS FORWARD VOLTAGE
FIG.2 -- FORWARD CURRENT VERSUS FORWARD
AT DIFFERENT TEMPERATURES (TYPICAL VALUES)
VOLTAGE (TYPICAL VALUES)
A
500
100
400
IF
T J =25
IF
10
300
TJ=25
1
200
TJ=60
0.1
0.01
100
0
0
0.2
0.4
0.6
0.8
1.0
1.2
0
V
VF
0.2
0.4
0.6
0.8
VF
1
V
FIG.3 -- REVERSE CURRENT VERSUS JUNCTION TEMPERATURE (TYPICAL VALUES)
1000
90%confidence
V R =75V
IR
100
max.
typ.
10
1
0.1
0
25
50
75
100
125
TJ
Document Number 0265008
KI SEMICONDUCTOR
2.
RATINGS AND CHARACTERISTIC CURVES
BAT46
FIG.4 -- REVERSE CURRENT VERSUS CONTINUOUS REVERSE VOLTAGE
µs
1 00 0
12 5
10 0
IR
10 0
75
10
60
50
1
.1
25
0
20
40
60
80
10 0
V
VR
FIG.5 -- CAPACITANCE C VERSUS REVERSE APPLIED VOLTAGE VR (TYPICAL VALUES)
pF
10
CJ
Tamb=25℃
8
6
4
2
0
20
40
60
80
100
V
VR
Document Number 0265008
KI SEMICONDUCTOR
3.
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