Rohm CDZC6.8B Esd protection diode Datasheet

Data Sheet
ESD Protection Diode
CDZC6.8B
Dimensions（Unit : mm ）
Applications
ESD Protection
Land size figure(Unit : mm)
0.45
0.55
0.16±0.05
0.9±0.05
Features
1)Ultra small mold type. （VMN2）
2)High reliability
3)Ultra low Capacitance
1.0±0.05
0.45
0.5
0.6±0.05
VMN2
Structure
0.156
Construction
Silicon epitaxial planar
0.37±0.03
0.35±0.1
ROHM : VMN2
dot (year week factory) + day
Taping specifications（Unit : mm ）
Absolute maximum ratings （Ta=25℃）
Parameter
Symbol
Power dissipation
P
Junction temperature
Tj
Storage temperature
Tstg
Electical voltage（Ta=25℃）
Parameter
Zener voltage
Reverse current
Capacitance between terminals
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© 2011 ROHM Co., Ltd. All rights reserved.
Limits
Unit
mW
100
150
-55 to +150
℃
℃
Symbol
VZ
IR
Min.
6.65
-
Typ.
-
Max.
6.93
0.50
Unit
V
μA
Ct
-
3
-
pF
1/2
Conditions
IZ=5mA
VR=3.5V
VR=0V , f=1MHz
2011.03 - Rev.A
Data Sheet
CDZC6.8B
characteristic curves
10
REVERSE CURRENT:IR(pA)
1
Ta=125C
Ta=25C
0.1
f=1MHｚ
1000
Ta=25C
Ta=25C
100
10
0.01
5
5.5
6
6.5
7
7.5
1
0
8
0.5
1
1.5
2
2.5
3
3.5
0
10
7
6.9
6.8
6.7
AVE:6.752V
6.6
6.5
Vz DISPERSION MAP
Ta=25C
VR=3.5V
n=30pcs
8
7
6
5
4
3
2
1
1.5
2
2.5
3
3.5
10
9
REVERSE CURRENT:IR(nA)
Ta=25C
IZ=5mA
n=30pcs
0.5
REVERSE VOLTAGE : V R(V)
VR-Ct CHARACTERISTICS
REVERSE VOLTAGE : V R(V)
VR-IR CHARACTERISTICS
ZENER VOLTAGE : Vz(V)
Vz-Iz CHARACTERISTICS
AVE:0.334nA
8
7
6
5
4
AVE:2.87pF
3
2
1
1
0
0
IR DISPERSION MAP
Ta=25C
f=1MHz
VR=0V
n=10pcs
9
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
ZENER CURRENT:Iz(mA)
10
Ta=75C
Ta=75C
Ta=25C
ZENER VOLTAGE:Vz(V)
Ta=125C
10000
CAPACITANCE BETWEEN
TERMINALS:Ct(pF)
Electrical
Ct DISPERSION MAP
DYNAMIC IMPEDANCE:Zz(Ω)
100
10
1
0.1
1
ZENER CURRENT : Iz(mA)
Zz-Iz CHARACTERISTICS
10
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© 2011 ROHM Co., Ltd. All rights reserved.
2/2
2011.03 - Rev.A
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Notes
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120A