NTD2955, NTD2955P, NVD2955 Power MOSFET −60 V, −12 A, P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. http://onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V 155 mW @ −10 V, 6 A −12 A P−Channel Features D • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Designed for Low−Voltage, High−Speed Switching Applications and MARKING DIAGRAMS 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) Drain Current Drain Current − Continuous @ Ta = 25°C Drain Current − Single Pulse (tp ≤ 10 ms) Symbol Value Unit VDSS −60 Vdc VGS VGSM ± 20 ± 25 Vdc Vpk ID IDM −12 −18 Adc Apk Total Power Dissipation @ Ta = 25°C PD 55 W Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C EAS 216 mJ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds RqJC RqJA RqJA 2.73 71.4 100 °C/W TL 260 °C October, 2012 − Rev. 12 1 4 Drain 4 Drain 3 DPAK CASE 369C STYLE 2 2 2 1 1 3 3 Drain Drain Gate Source Gate Source 4 1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). © Semiconductor Components Industries, LLC, 2012 1 2 4 Drain YWW NT 2955G Rating YWW NTP 2955G • S YWW NT 2955G • G to Withstand High Energy in the Avalanche and Commutation Modes NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant 2 3 DPAK−3 CASE 369D STYLE 2 Y WW G 1 2 3 Gate Drain Source = Year = Work Week = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Publication Order Number: NTD2955/D NTD2955, NTD2955P, NVD2955 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit −60 − − 67 − − − − − − −10 −100 − − −100 −2.0 − −2.8 4.5 −4.0 − − 0.155 0.180 −1.86 − −2.6 −2.0 8.0 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = −0.25 mA) (Positive Temperature Coefficient) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) (Negative Temperature Coefficient) VGS(th) Static Drain−Source On−State Resistance (VGS = −10 Vdc, ID = −6.0 Adc) RDS(on) Drain−to−Source On−Voltage (VGS = −10 Vdc, ID = −12 Adc) (VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS Vdc mV/°C W Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Reverse Transfer Capacitance Ciss − 500 750 Coss − 150 250 Crss − 50 100 td(on) − 10 20 tr − 45 85 td(off) − 26 40 tf − 48 90 SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −30 Vdc, ID = −12 A, VGS = −10 V, RG = 9.1 W) Fall Time Gate Charge (VDS = −48 Vdc, VGS = −10 Vdc, ID = −12 A) QT − 15 30 QGS − 4.0 − QGD − 7.0 − − − −1.6 −1.3 −2.5 − trr − 50 ta − 40 − tb − 10 − QRR − 0.10 − ns nC DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) VSD Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V) Reverse Recovery Stored Charge 3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. http://onsemi.com 2 Vdc ns mC NTD2955, NTD2955P, NVD2955 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = -10 V TJ = 25°C -9 V -8 V -9.5 V 20 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 25 -7 V -6.5 V 15 -6 V 10 -5.5 V -5 V 5 0 0 1 2 3 4 5 6 7 8 9 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 24 22 20 25°C 12 10 8 6 4 2 2 4 6 8 3 5 7 9 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.35 TJ = 125°C 0.25 25°C 0.15 -55°C 0.10 0.05 0 0 3 9 18 6 15 12 −ID, DRAIN CURRENT (AMPS) 21 24 RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) 0.40 0.250 TJ = 25°C 0.225 0.200 VGS = −10 V 0.175 0.150 -15 V 0.125 0.100 0.075 0.050 0 Figure 3. On−Resistance versus Drain Current and Temperature 2.0 1.8 1.6 3 9 18 6 12 15 -ID, DRAIN CURRENT (AMPS) 21 24 Figure 4. On−Resistance versus Drain Current and Gate Voltage 1000 VGS = 0 V VGS = −10 V ID = −6 A −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = −10 V 0.20 10 Figure 2. Transfer Characteristics 0.50 0.30 125°C 18 Figure 1. On−Region Characteristics 0.45 TJ = -55°C 16 14 0 10 VDS ≥ −10 V 1.4 1.2 1.0 0.8 0.6 0.4 100 TJ = 125°C 10 100°C 0.2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 1 175 5 Figure 5. On−Resistance Variation with Temperature 10 15 20 25 30 35 40 45 50 55 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−To−Source Leakage Current versus Voltage http://onsemi.com 3 60 C, CAPACITANCE (pF) 1000 800 VDS = 0 V VGS = 0 V TJ = 25°C Ciss Crss Ciss 400 Coss 200 Crss 5 0 5 -VGS 10 15 20 25 ID = 12 A TJ = 25°C VDS 12.5 600 0 10 15 QT 10 60 50 40 VGS 7.5 30 QGD QGS 5 20 2.5 10 0 0 2 4 6 8 10 12 0 16 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1200 −VGS, GATE−TO−SOURCE VOLTAGE (V) NTD2955, NTD2955P, NVD2955 QT, TOTAL GATE CHARGE (nC) -VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 15 VDD = −30 V ID = −12 A VGS = −10 V TJ = 25°C −IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 100 tf tr td(off) td(on) 10 1 1 10 VGS = 0 V TJ = 25°C 10 5 0 100 RG, GATE RESISTANCE (W) 0 0.5 0.25 1 0.75 1.25 1.5 1.75 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage versus Current Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (AMPS) 100 VGS = −15 V SINGLE PULSE TC = 25°C 10 di/dt 100 ms IS 1 ms 0.1 0.1 trr 10 ms 1 dc ta RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 tb TIME 0.25 IS tp 10 100 IS −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Diode Reverse Recovery Waveform Figure 11. Maximum Rated Forward Biased Safe Operating Area http://onsemi.com 4 NTD2955, NTD2955P, NVD2955 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) Figure 13. Thermal Response http://onsemi.com 5 1.0E-01 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E+00 1.0E+01 NTD2955, NTD2955P, NVD2955 ORDERING INFORMATION Package Shipping† NTD2955G DPAK (Pb−Free) 75 Units / Rail NTD2955−1G IPAK (Pb−Free) 75 Units / Rail NTD2955T4G DPAK (Pb−Free) NTD2955PT4G DPAK (Pb−Free) NVD2955T4G* DPAK (Pb−Free) Device 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. http://onsemi.com 6 NTD2955, NTD2955P, NVD2955 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE D A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT* 6.20 0.244 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD2955, NTD2955P, NVD2955 PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 A S 1 2 DIM A B C D E F G H J K R S V Z Z 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. 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