AP10P10GH/J-HF
Halogen-Free Product
Advanced Power
Electronics Corp.
P-CHANNEL ENHANCEMENT MODE
POWER MOSFET
▼ Simple Drive Requirement
D
▼ Lower Gate Charge
▼ Fast Switching Characteristic
-100V
RDS(ON)
500mΩ
ID
G
▼ RoHS Compliant & Halogen-Free
BVDSS
-5.7A
S
Description
Advanced Power MOSFETs from APEC provide the designer with the best
combination of fast switching, ruggedized device design, low on-resistance
and cost-effectiveness.
G
The TO-252 package is widely preferred for all commercial-industrial
surface mount applications and suited for low voltage applications such as
DC/DC converters. The through-hole version (AP10P10GJ) is available for
low-profile applications.
D
S
TO-252(H)
G
D
S
TO-251(J)
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
Symbol
Parameter
Rating
Units
VDS
Drain-Source Voltage
-100
V
VGS
Gate-Source Voltage
+30
V
ID@TC=25℃
Drain Current, VGS @ 10V
-5.7
A
ID@TC=100℃
Drain Current, VGS @ 10V
-3.6
A
-15
A
32.5
W
2
W
1
IDM
Pulsed Drain Current
PD@TC=25℃
Total Power Dissipation
3
PD@TA=25℃
Total Power Dissipation
TSTG
Storage Temperature Range
-55 to 150
℃
TJ
Operating Junction Temperature Range
-55 to 150
℃
Thermal Data
Symbol
Rthj-c
Parameter
Maximum Thermal Resistance, Junction-case
Rthj-a
Maximum Thermal Resistance, Junction-ambient (PCB mount)
Rthj-a
Maximum Thermal Resistance, Junction-ambient
Data and specifications subject to change without notice
3
Value
Units
3.85
℃/W
62.5
℃/W
110
℃/W
1
201501123
AP10P10GH/J-HF
Electrical Characteristics@Tj=25oC(unless otherwise specified)
Symbol
BVDSS
RDS(ON)
Parameter
Test Conditions
Drain-Source Breakdown Voltage
Static Drain-Source On-Resistance
Min.
Typ.
-100
-
-
V
VGS=-10V, ID=-3A
-
-
500
mΩ
VGS=-4.5V, ID=-2A
-
-
600
mΩ
VGS=0V, ID=-250uA
2
Max. Units
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250uA
-1
-
-3
V
gfs
Forward Transconductance
VDS=-10V, ID=-3A
-
5
-
S
IDSS
Drain-Source Leakage Current
VDS=-80V, VGS=0V
-
-
-25
uA
IGSS
Gate-Source Leakage
VGS=+20V, VDS=0V
-
-
+100
nA
Qg
Total Gate Charge
ID=-3A
-
6
9.6
nC
Qgs
Gate-Source Charge
VDS=-80V
-
1.5
-
nC
Qgd
Gate-Drain ("Miller") Charge
VGS=-4.5V
-
3.2
-
nC
td(on)
Turn-on Delay Time
VDS=-50V
-
7
-
ns
tr
Rise Time
ID=-3A
-
6
-
ns
td(off)
Turn-off Delay Time
RG=3.3Ω
-
15
-
ns
tf
Fall Time
VGS=-10V
-
4
-
ns
Ciss
Input Capacitance
VGS=0V
-
450
720
pF
Coss
Output Capacitance
VDS=-25V
-
40
-
pF
Crss
Reverse Transfer Capacitance
f=1.0MHz
-
30
-
pF
Rg
Gate Resistance
f=1.0MHz
-
5.6
11.2
Ω
Min.
Typ.
Max. Units
IS=-3A, VGS=0V
-
-
-1.3
V
Source-Drain Diode
Symbol
Parameter
2
Test Conditions
VSD
Forward On Voltage
trr
Reverse Recovery Time
IS=-3A, VGS=0V,
-
35
-
ns
Qrr
Reverse Recovery Charge
dI/dt=-100A/µs
-
58
-
nC
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in 2 copper pad of FR4 board
THIS PRODUCT IS SENSITIVE TO ELECTROSTATIC DISCHARGE, PLEASE HANDLE WITH CAUTION.
USE OF THIS PRODUCT AS A CRITICAL COMPONENT IN LIFE SUPPORT OR OTHER SIMILAR SYSTEMS IS NOT AUTHORIZED.
APEC DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED
HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
APEC RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN.
2
AP10P10GH/J-HF
14
8
10
-10V
-7.0V
-6.0V
-5.0V
8
V G = - 4 .0 V
T C = 25 C
-ID , Drain Current (A)
12
-10V
- 7 .0V
- 6 .0V
- 5.0 V
V G = - 4 .0 V
T C = 150 o C
6
4
-ID , Drain Current (A)
o
6
4
2
2
0
0
0
4
8
12
16
20
0
24
2
Fig 1. Typical Output Characteristics
6
8
10
12
Fig 2. Typical Output Characteristics
460
2.4
I D = -2 A
T C =25 ℃
I D = -3 A
V G = - 10V
2.0
Normalized RDS(ON)
440
RDS(ON) (mΩ )
4
-V DS , Drain-to-Source Voltage (V)
-V DS , Drain-to-Source Voltage (V)
420
400
1.6
1.2
0.8
380
0.4
360
2
4
6
8
-50
10
0
50
100
150
T j , Junction Temperature ( o C)
-V GS , Gate-to-Source Voltage (V)
Fig 3. On-Resistance v.s. Gate Voltage
Fig 4. Normalized On-Resistance
v.s. Junction Temperature
2.0
3.0
Normalized VGS(th)
I D = -250uA
-IS(A)
2.0
o
o
T j =25 C
T j =150 C
1.5
1.0
1.0
0.5
0.0
0.0
0
0.2
0.4
0.6
0.8
1
-V SD , Source-to-Drain Voltage (V)
Fig 5. Forward Characteristic of
Reverse Diode
1.2
-50
0
50
100
150
T j , Junction Temperature ( o C)
Fig 6. Gate Threshold Voltage v.s.
Junction Temperature
3
AP10P10GH/J-HF
f=1.0MHz
600
I D = -3A
V DS = -80V
500
8
C iss
400
6
C (pF)
-VGS , Gate to Source Voltage (V)
10
300
4
200
2
100
C oss
C rss
0
0
0
2
4
6
8
1
10
5
Fig 7. Gate Charge Characteristics
17
21
25
29
10
Normalized Thermal Response (R thjc)
1
Operation in this area
limited by RDS(ON)
100us
1ms
10ms
100ms
DC
1
T C =25 o C
Single Pulse
Duty factor=0.5
0.2
0.1
0.1
0.05
PDM
0.02
t
T
0.01
Duty factor = t/T
Peak Tj = PDM x Rthjc + T C
Single Pulse
0.01
0.1
0.1
1
10
100
0.00001
1000
0.0001
-V DS , Drain-to-Source Voltage (V)
0.001
0.01
0.1
1
t , Pulse Width (s)
Fig 9. Maximum Safe Operating Area
Fig 10. Effective Transient Thermal Impedance
5
8
o
V DS = -5V
T j =150 C
T j =-40 o C
T j =25 o C
-ID , Drain Current (A)
4
-ID , Drain Current (A)
13
Fig 8. Typical Capacitance Characteristics
100
-ID (A)
9
-V DS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
3
2
6
4
2
1
0
0
0
1
2
3
4
5
6
7
-V GS , Gate-to-Source Voltage (V)
Fig 11. Transfer Characteristics
8
25
50
75
100
125
150
T C , Case Temperature ( o C )
Fig 12. Drain Current v.s. Case Temperature
4
AP10P10GH/J-HF
MARKING INFORMATION
TO-251
10P10GJ
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
TO-252
10P10GH
Part Number
meet Rohs requirement
for low voltage MOSFET only
Package Code
YWWSSS
Date Code (YWWSSS)
Y：Last Digit Of The Year
WW：Week
SSS：Sequence
5