NDPL070N10B Power MOSFET 100V, 10.8mΩ, 70A, N-Channel This N-Channel Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Low On-Resistance Low Gate Charge High Speed Switching 100% Avalanche Tested Pb-Free and RoHS compliance www.onsemi.com VDSS 100V RDS(on) Max 10.8 mΩ@15V ID Max 70A 12.8 mΩ@10V ELECTRICAL CONNECTION N-Channel Applications Battery Protection Motor Drive Primary Side Switch Secondary Side Synchronous Rectification D(2) G(1) SPECIFICATION ABSOLUTE MAXIMUM RATINGS at Ta = 25C (Note 1) Parameter Symbol S(3) Value Unit Drain to Source Voltage VDSS 100 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 70 A 280 A 2.1 72 175 W C 55 to +175 C Drain Current (Pulse) PW10s, duty cycle1% Power Dissipation Tc=25C IDP PD Junction Temperature Tj Storage Temperature Tstg Source Current (Body Diode) IS 70 A Avalanche Energy (Single Pulse) (Note 2) EAS 82 mJ Lead Temperature for Soldering TL 260 C Purposes, 3mm from Case for 10 Seconds Note 1 : Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 2 : VDD=48V, L=100H, IAV=30A (Fig.1) MARKING 070N10 TO-220-3L B LOTNo. ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Thermal Resistance Ratings Parameter Symbol Value Junction to Case Steady State RJC 2.08 Junction to Ambient (Note 3) RJA 71.4 Unit C/W Note 3 : Insertion mounted © Semiconductor Components Industries, LLC, 2015 September 2015 - Rev. 0 1 Publication Order Number : NDPL070N10B/D NDPL070N10B ELECTRICAL CHARACTERISTICS at Ta 25C (Note 4) Value Parameter Symbol Drain to Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate to Source Leakage Current Forward Transconductance IGSS VGS(th) gFS Static Drain to Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time Rise Time tr Turn-OFF Delay Time td(off) 55 ns Fall Time tf 40 ns Total Gate Charge Qg 26 nC Gate to Source Charge Qgs Gate to Drain “Miller” Charge Qgd Forward Diode Voltage VSD Gate Threshold Voltage Conditions min ID=10mA, VGS=0V VDS=100V, VGS=0V VGS=±20V, VDS=0V typ Unit max 100 VDS=10V, ID=1mA V 2 10 A 100 nA 4 V VDS=10V, ID=35A 50 ID=35A, VGS=15V 9.0 10.8 m 9.8 12.8 m ID=35A, VGS=10V S 2,010 pF 840 pF Crss 21 pF td(on) 30 ns 180 ns VDS=50V, f=1MHz See Fig.2 VDS=48V, VGS=10V, ID=70A IS=70A, VGS=0V 9 nC 8 nC 1.1 1.5 V Reverse Recovery Time 95 ns trr See Fig.3 IS=70A, VGS=0V, di/dt=100A/s Reverse Recovery Charge 240 nC Qrr Note 4 : Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Fig.1 Unclamped Inductive Switching Test Circuit D ≥50 10V 0V L VDD=48V VIN ID=35A RL=1.37 VIN G S 10V 0V Fig.2 Switching Time Test Circuit G VDD 50 VOUT D PW=10s D.C.≤1% NDPL070N10B NDPL070N10B P.G Fig.3 Reverse Recovery Time Test Circuit NDPL070N10B D L G S VDD Driver MOSFET www.onsemi.com 2 50 S NDPL070N10B www.onsemi.com 3 NDPL070N10B www.onsemi.com 4 NDPL070N10B PACKAGE DIMENSIONS unit : mm TO-220, 3-Lead / TO-220-3L CASE 221AU ISSUE O 1 : Gate 2 : Drain 3 : Source *1 : Lot indication www.onsemi.com 5 NDPL070N10B ORDERING INFORMATION Device NDPL070N10BG Marking Package Shipping (Qty / Packing) 070N10 TO-220, 3-Lead / TO-220-3L (Pb-Free) 50 / Tube Note on usage : Since the NDPL070N10B is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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