Preliminary Datasheet HAT2200WP Silicon N Channel Power MOS FET Power Switching REJ03G1678-0310 Rev.3.10 May 13, 2010 Features Capable of 8 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 22 m typ. (at VGS = 10 V) Outline RENESAS Package code: PWSN0008DA-A (Package name: WPAK) 5 6 7 8 D D D D 5 6 7 8 4 3 2 1 1, 2, 3 Source 4 Gate 5, 6, 7, 8 Drain 4 G S S S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal Impedance Channel temperature Storage temperature Symbol VDSS VGSS ID ID(pulse) Note1 IDR IAP Note 2 EAR Note 2 Pch Note3 ch-c Note3 Tch Tstg Ratings 100 ±20 20 80 20 20 40 20 6.25 150 –55 to +150 Unit V V A A A A mJ W °C/W °C °C Notes: 1. PW 10 s, duty cycle 1% 2. Value at Tch = 25°C, Rg 50 3. Tc = 25°C REJ03G1678-0310 Rev.3.10 May 13, 2010 Page 1 of 7 HAT2200WP Preliminary Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Gate resistance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Symbol V(BR)DSS IGSS IDSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss Rg Qg Qgs Qgd td(on) tr td(off) tf VDF trr Min 100 — — 3.5 — — 19 — — — — — — — — — — Typ — — — — 22 23 33 2300 280 90 1.3 32 12 8 16 9.5 31 Max — ±0.1 1 5.0 28 33 — — — — — — — — — — — Unit V A A V m m S pF pF pF nc nc nc ns ns ns — — — 4.6 0.82 50 — 1.07 — ns V ns Test Conditions ID = 10 mA, VGS = 0 VGS = ±20 V, VDS = 0 VDS = 100 V, VGS = 0 VDS = 10 V, ID = 1 mA ID = 10 A, VGS = 10 V Note4 ID = 10 A, VGS = 8 V Note4 ID = 10 A, VDS = 10 V Note4 VDS = 10 V VGS = 0 f = 1 MHz VDD = 50 V VGS = 10 V ID = 20 A VGS = 10 V, ID = 10 A VDD 30 V RL = 3 Rg = 4.7 IF = 20 A, VGS = 0 Note4 IF = 20 A, VGS = 0 diF/ dt = 100 A/ s Notes: 4. Pulse test REJ03G1678-0310 Rev.3.10 May 13, 2010 Page 2 of 7 HAT2200WP Preliminary Main Characteristics Power vs. Temperature Derating Maximum Safe Operation Area 100 Drain Current ID (A) Channel Dissipation Pch (W) 40 30 20 10 10 μs 10 100 μs 1 Operation in this area is 0.1 limited by RDS(on) PW = 10 ms DC Operation Tc=25°C 0.01 Ta = 25°C 0 50 100 150 0.001 1 shot Pulse 0.1 0.3 1 3 200 30 100 300 1000 Drain to Source Voltage VDS (V) Typical Output Characteristics Typical Transfer Characteristics 20 5.8 V VDS = 10 V Pulse Test 6V 12 5.6 V 8 VGS = 5.4 V 4 Drain Current ID (A) 10 V 16 10 Case Temperature Tc (°C) 20 Drain Current ID (A) 1 ms 16 12 Tc = 75°C 8 25°C 4 –25°C Pulse Test 2 4 6 8 0 10 2 4 6 8 10 Drain to Source Voltage VDS (V) Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage Static Drain to Source On State Resistance vs. Drain Current 250 Pulse Test 200 150 ID = 5 A 100 2A 50 1A 0 5 10 15 20 Gate to Source Voltage VGS (V) REJ03G1678-0310 Rev.3.10 May 13, 2010 Static Drain to Source On State Resistance RDS(on) (mΩ) Drain to Source Voltage VDS(on) (mV) 0 100 Pulse Test 50 VGS = 8 V 20 10 V 10 5 2 1 1 10 100 Drain Current ID (A) Page 3 of 7 Preliminary Static Drain to Source On State Resistance vs. Temperature Forward Transfer Admittance vs. Drain Current Forward Transfer Admittance |yfs| (S) Static Drain to Source On State Resistance RDS(on) (mΩ) HAT2200WP 50 Pulse Test 1 A, 2 A, 5 A 40 30 ID = 1 A, 2 A, 5 A VGS = 8 V 20 10 V 10 2 -25 0 25 50 75 100 125 150 10 25°C 75°C 1 VDS = 10 V Pulse Test 0.1 0.3 1 3 10 30 Drain Current ID (A) Body–Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage 100 10000 Capacitance C (pF) 50 20 10 0.1 300 Coss 100 Crss VGS = 0 f = 1 MHz 10 100 0 10 20 30 40 50 Drain to Source Voltage VDS (V) Dynamic Input Characteristics Switching Characteristics 20 ID = 20 A 16 VDS = 100 V 50 V 25 V VGS 12 VDS 100 8 50 0 1000 Reverse Drain Current IDR (A) 200 150 10 VDS = 100 V 50 V 25 V 10 20 30 40 Gate Charge Qg (nc) REJ03G1678-0310 Rev.3.10 May 13, 2010 4 0 50 1000 VGS = 10 V, VDS = 30 V Rg = 4.7Ω, duty ≤ 1 % Switching Time t (ns) 250 1 Ciss 3000 30 di/dt = 100 A/μs VGS = 0, Ta = 25°C Gate to Source Voltage VGS (V) Reverse Recovery Time trr (ns) Tc = –25°C Case Temperature Tc (°C) 100 Drain to Source Voltage VDS (V) 100 100 td(off) td(on) 10 tf tr 1 0.1 1 10 100 Drain Current ID (A) Page 4 of 7 HAT2200WP Preliminary Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy EAR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating Reverse Drain Current IF (A) 20 VGS = 0 V, –5 V 10 V 16 12 8 4 Pulse Test 0 0.4 0.8 1.2 1.6 2.0 Source to Drain Voltage VSDF (V) 50 IAP = 20 A VDD = 50 V duty < 0.1 % Rg ≥ 50 Ω 40 30 20 10 0 25 50 75 100 125 150 Channel Temperature Tch (°C) Normalized Transient Thermal Impedance γs (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 Tc = 25°C 1 D=1 0.5 0.3 0.2 0.1 θch - c(t) = γs (t) • θch - c θch - c = 6.25°C/ W, Tc = 25°C 0.1 0.05 0.02 1 0.0 0.01 10 μ PDM e ls 0.03 ot pu PW T PW T h 1s 100 μ D= 1m 10 m 100 m 1 10 Pulse Width PW (s) REJ03G1678-0310 Rev.3.10 May 13, 2010 Page 5 of 7 HAT2200WP Preliminary Avalanche Test Circuit Avalanche Waveform EAR = L VDS Monitor 1 2 L • IAP2 • VDSS VDSS - VDD IAP Monitor V(BR)DSS IAP Rg D. U. T VDS VDD ID Vin 15 V 50 Ω 0 VDD Switching Time Test Circuit Vout Monitor Vin Monitor Rg Switching Time Waveform 90% D.U.T. RL Vin Vout Vin 10 V 10% 10% VDS = 30 V 90% td(on) REJ03G1678-0310 Rev.3.10 May 13, 2010 10% tr 90% td(off) tf Page 6 of 7 HAT2200WP Preliminary Package Dimensions JEITA Package Code ⎯ RENESAS Code PWSN0008DA-A Previous Code WPAKV MASS[Typ.] 0.075g 0.8Max 5.1 ± 0.2 Unit: mm 0.5 ± 0.15 Package Name WPAK 4.21Typ 1.27Typ +0.1 -0.2 5.9 3.8 ± 0.2 +0.1 -0.3 6.1 3.9 ± 0.2 0.05Max 0Min Stand-off 1.27Typ 0.2Typ 0.5 ± 0.15 0.545Typ 0.7Typ 0.04Min 0.4 ± 0.06 4.9 ± 0.1 (Ni/Pd/Au plating) Notice:The reverse pattern of die-pad support lead described above exists. Ordering Information Part No. HAT2200WP-EL-E REJ03G1678-0310 Rev.3.10 May 13, 2010 Quantity 2500 pcs Shipping Container Taping Page 7 of 7 Notice 1. All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. 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