Renesas FX6KMJ-3 High-speed switching use pch power mos fet Datasheet

FX6KMJ-3
High-Speed Switching Use
Pch Power MOS FET
REJ03G0263-0100
Rev.1.00
Aug.20.2004
Features
•
•
•
•
•
Drive voltage : 4 V
VDSS : – 150 V
rDS(ON) (max) : 0.53 Ω
ID : – 6 A
Recovery Time of the Integrated Fast Recovery Diode (TYP.) : 100 ns
Outline
TO-220FN
3
1. Gate
2. Drain
3. Source
1
1
2
3
2
Applications
Motor control, lamp control, solenoid control, DC-DC converters, etc.
Maximum Ratings
(Tc = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Source current
Source current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Mass
Rev.1.00, Aug.20.2004, page 1 of 6
Symbol
VDSS
VGSS
ID
IDM
IDA
IS
ISM
PD
Tch
Tstg
Viso
Ratings
–150
±20
–6
–24
–6
–6
–24
25
– 55 to +150
– 55 to +150
2000
Unit
V
V
A
A
A
A
A
W
°C
°C
V
—
2.0
g
Conditions
VGS = 0 V
VDS = 0 V
L = 100 µH
AC 1 minute,
Terminal to case
Typical value
FX6KMJ-3
Electrical Characteristics
(Tch = 25°C)
Parameter
Drain-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
Reverse recovery time
Rev.1.00, Aug.20.2004, page 2 of 6
Symbol
V(BR)DSS
IGSS
IDSS
VGS(th)
rDS(ON)
rDS(ON)
VDS(ON)
| yfs |
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
VSD
Rth(ch-c)
trr
Min.
–150
—
—
–1.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ.
—
—
—
–1.5
0.41
0.45
–1.23
7.9
2420
152
69
14
18
156
58
–1.0
—
100
Max.
—
±0.1
–0.1
–2.0
0.53
0.59
–1.59
—
—
—
—
—
—
—
—
–1.5
5.00
—
Unit
V
µA
mA
V
Ω
Ω
V
S
pF
pF
pF
ns
ns
ns
ns
V
°C/W
ns
Test conditions
ID = –1 mA, VGS = 0 V
VGS = ±20 V, VDS = 0 V
VDS = –150 V, VGS = 0 V
ID = –1 mA, VDS = –10 V
ID = –3 A, VGS = –10 V
ID = –3 A, VGS = – 4 V
ID = –3 A, VGS = –10 V
ID = –3 A, VDS = –10 V
VDS = –10 V, VGS = 0 V,
f = 1MHz
VDD = – 80 V, ID = –3 A,
VGS = –10 V,
RGEN = RGS = 50 Ω
IS = –3 A, VGS = 0 V
Channel to case
IS = – 6 A, dis/dt = 100 A/µs
FX6KMJ-3
Performance Curves
Drain Power Dissipation Derating Curve
Maximum Safe Operating Area
–102
–7
–5
Drain Current ID (A)
40
30
20
10
0
0
–20
Drain Current ID (A)
–3
–2
tw = 10µs
–101
–7
–5
100µs
–3
–2
1ms
–100
–7
–5
10ms
–3
–2
50
100
DC
–2 –3 –5 –7–101 –2 –3 –5–7–102 –2 –3 –5 –7–103 –2
200
150
Tc = 25°C
Single Pulse
–10–1
Case Temperature Tc (°C)
Drain-Source Voltage VDS (V)
Output Characteristics (Typical)
Output Characteristics (Typical)
VGS= –10V
–10
– 6V
– 5V
– 4V
–16
Tc = 25°C
Pulse Test
–12
–8
– 3V
–4
Drain Current ID (A)
Drain Power Dissipation PD (W)
50
VGS=
–10V
– 6V
– 5V
– 4V
– 3.5V
Tc = 25°C
– 8 Pulse Test
–6
– 3V
–4
P D = 25W
–2
– 2.5V
P D = 25W
0
–4
–8
–12
–16
–2
–4
–6
–8
Drain-Source Voltage VDS (V)
On-State Voltage vs.
Gate-Source Voltage (Typical)
On-State Resistance vs.
Drain Current (Typical)
Tc = 25°C
Pulse Test
–16
–12
–8
ID = –12A
–4
– 6A
– 3A
0
0
Drain-Source Voltage VDS (V)
–20
0
0
–20
–2
–4
–6
–8
Gate-Source Voltage VGS (V)
Rev.1.00, Aug.20.2004, page 3 of 6
–10
Drain-Source On-State Resistance rDS(ON) (Ω)
Drain-Source On-State Voltage VDS(ON) (V)
0
–10
1.0
Tc = 25°C
Pulse Test
0.8
0.6
VGS = – 4V
–10V
0.4
0.2
0
–10–1 –2 –3 –5–7–100 –2 –3 –5–7–101 –2 –3 –5 –7–102
Drain Current ID (A)
FX6KMJ-3
Forward Transfer Admittance vs.
Drain Current (Typical)
Drain Current ID (A)
–20
Tc = 25°C
VDS = –10V
Pulse Test
–16
–12
–8
–4
0
0
–2
–4
–6
–8
–10
Forward Transfer Admittance | yfs | (S)
Transfer Characteristics (Typical)
VDS = –10V
101 Pulse Test
7
5
Tc = 25°C
75°C
125°C
3
2
100
7
5
3
2
–7–10–1
–2 –3
–5 –7 –100
–2 –3
–5 –7
Gate-Source Voltage VGS (V)
Drain Current ID (A)
Capacitance vs.
Drain-Source Voltage (Typical)
Switching Characteristics (Typical)
103
3
2
Tch = 25°C
103 f = 1MHz
7 VGS = 0V
5
3
2
102
Coss
7
5
Crss
Tch = 25°C
VDD = – 80V
VGS = –10V
3 RGEN = RGS = 50Ω
7
5
Ciss
Switching Time (ns)
Capacitance (pF)
2
2
td(off)
102
tf
7
5
3
tr
2
td(on)
3
–100
–2 –3
–5 –7 –101
101 –1
–10
–2 –3
–5 –7 –102
–2 –3
Gate-Source Voltage vs.
Gate Charge (Typical)
Source-Drain Diode Forward
Characteristics (Typical)
–20
–8
VDS = – 50V
– 80V
–100V
–6
–4
–2
10
20
30
40
Gate Charge Qg (nC)
Rev.1.00, Aug.20.2004, page 4 of 6
50
Source Current IS (A)
Gate-Source Voltage VGS (V)
–5 –7 –101
Drain Current ID (A)
VGS = 0V
Pulse Test
Tch = 25°C
ID = – 6 A
0
–2 –3
Drain-Source Voltage VDS (V)
–10
0
–5 –7 –100
–16
Tc = 125°C
75°C
25°C
–12
–8
–4
0
0
– 0.4
– 0.8
–1.2
–1.6
Source-Drain Voltage VSD (V)
–2.0
On-State Resistance vs.
Channel Temperature (Typical)
Gate-Source Threshold Voltage VGS(th) (V)
Drain-Source On-State Resistance rDS(ON) (25°C)
Drain-Source On-State Resistance rDS(ON) (t°C)
FX6KMJ-3
101
7
5
VGS = –10V
ID = 1/2 ID
Pulse Test
3
2
100
7
5
3
2
10–1
–50
0
50
100
150
Threshold Voltage vs.
Channel Temperature (Typical)
– 4.0
VDS = –10V
ID = –1mA
– 3.2
– 2.4
–1.6
– 0.8
0
VGS = 0V
ID = –1mA
1.2
1.0
0.8
0.6
0.4
–50
0
50
100
150
Transient Thermal Impedance Zth(ch-c) (°C/W)
Drain-Source Breakdown Voltage V(BR)DSS (t°C)
Drain-Source Breakdown Voltage V(BR)DSS (25°C)
1.4
0
150
101
7 D = 1.0
5
3 0.5
2
0.2
100 0.1
7
5
3
2
10–1
0.05
0.02
0.01
Single Pulse
PDM
7
5
tw
T
3
2
D = tw
T
10–2 –4
10 2 3 5 710–3 2 3 5 710–2 2 3 5 710–1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102
Pulse Width tw (s)
Switching Time Measurement Circuit
Vout
Monitor
100
Transient Thermal Impedance Characteristics
Channel Temperature Tch (°C)
Vin Monitor
50
Channel Temperature Tch (°C)
Channel Temperature Tch (°C)
Breakdown Voltage vs.
Channel Temperature (Typical)
–50
Switching Waveform
Vin
10%
D.U.T.
RGEN
RL
90%
RGS
Vout
td(on)
Rev.1.00, Aug.20.2004, page 5 of 6
90%
90%
VDD
10%
10%
tr
td(off)
tf
FX6KMJ-3
Package Dimensions
TO-220FN
EIAJ Package Code

JEDEC Code

Mass (g) (reference value)
Lead Material
2.0
Cu alloy
2.8 ± 0.2
6.5 ± 0.3
3 ± 0.3
φ 3.2 ± 0.2
3.6 ± 0.3
14 ± 0.5
15 ± 0.3
10 ± 0.3
1.1 ± 0.2
1.1 ± 0.2
0.75 ± 0.15
0.75 ± 0.15
2.54 ± 0.25
4.5 ± 0.2
2.54 ± 0.25
2.6 ± 0.2
Symbol
Dimension in Millimeters
Min
Typ
Max
A
A1
A2
b
D
E
e
x
y
y1
ZD
ZE
Note 1) The dimensional figures indicate representative values unless
otherwise the tolerance is specified.
Order Code
Lead form
Standard packing
Quantity
Standard order code
Straight type
Plastic Magazine (Tube)
50 Type name
Lead form
Plastic Magazine (Tube)
50 Type name – Lead forming code
Note : Please confirm the specification about the shipping in detail.
Rev.1.00, Aug.20.2004, page 6 of 6
Standard order
code example
FX6KMJ-3
FX6KMJ-3-A8
Sales Strategic Planning Div.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
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