Panasonic MA142WK Silicon epitaxial planar type Datasheet

Switching Diodes
MA3J142D (MA142WA), MA3J142E (MA142WK)
Silicon epitaxial planar type
Unit: mm
0.3+0.1
–0
For switching circuits
5˚
• Two isolated elements contained in one package, allowing highdensity mounting
1
2
(0.65) (0.65)
5˚
Unit
Maximum peak reverse voltage
Single
VR
80
V
VRM
80
V
IF
100
mA
Double
Single
Peak forward
current
150
IFM
225
Double
Non-repetitive peak
forward surge current *
Single
mA
EIAJ: SC-79
SMini3-F1 Package
mA
Marking Symbol:
• MA3J142D: MO
340
IFSM
500
Double
750
(0.15)
Rating
0 to 0.1
Symbol
Reverse voltage
0.9±0.1
1.3±0.1
2.0±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter
(0.425)
1.25±0.1
2.1±0.1
3
■ Features
Forward current
0.15+0.1
–0.05
MA3J142D MA3J142E
1 Cathode 1 Anode 1
2 Cathode 2 Anode 2
3 Anode
Cathode
• MA3J142E: MU
Internal Connection
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
3
3
Note) *: t = 1 s
1
■ Electrical Characteristics Ta = 25°C ± 3°C
Parameter
Symbol
Conditions
V
VR = 75 V
100
nA
VR = 0 V, f = 1 MHz
15
pF
Reverse voltage
VR
IR = 100 µA
Reverse current
IR
Ct
Min
Typ
2
Unit
IF = 100 mA
80
V
MA3J142E
Reverse recovery time * MA3J142D
E
1
1.2
VF
MA3J142D
2
Max
Forward voltage
Terminal capacitance
D
2
trr
MA3J142E
IF = 10 mA, VR = 6 V
10
Irr = 0.1 IR , RL = 100 Ω
3
ns
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. Absolute frequency of input and output is 100 MHz.
3. *: trr measurement circuit
Bias Application Unit (N-50BU)
Input Pulse
tp
tr
10%
A
VR
Pulse Generator
(PG-10N)
Rs = 50 Ω
Publication date: March 2004
Wave Form Analyzer
(SAS-8130)
Ri = 50 Ω
90%
tp = 2 µs
tr = 0.35 ns
δ = 0.05
Output Pulse
t
IF
trr
t
Irr = 0.1 IR
IF = 10 mA
VR = 6 V
RL = 100 Ω
Note) The part numbers in the parenthesis show conventional part number.
SKF00018BED
1
MA3J142D, MA3J142E
Characteristics charts of MA3J142D
IF  VF
IR  V R
Ta = 150°C
103
−20°C
10
1
Reverse current IR (nA)
Forward current IF (mA)
Ta = 150°C
100°C
102
10
25°C
10 −1
10 −1
0
0.2
0.4
0.6
0.8
1.0
1.2
IF = 100 mA
0.8
10 mA
3 mA
0.4
0
20
40
60
80
IR  T a
10
1
3.0
2.5
2.0
1.5
1.0
0
40
80
120
160
Ambient temperature Ta (°C)
200
0
20
40
60
80
100
Reverse voltage VR (V)
SKF00018BED
80
120
160
200
IF(surge)  tW
0.5
0
40
103
120
Ta = 25°C
IF(surge)
Forward surge current IF(surge) (A)
Terminal capacitance Ct (pF)
35 V
6V
102
10 −1
−40
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
3.5
VR = 75 V
0
−40
120
Ct  VR
4.0
103
100
Reverse voltage VR (V)
104
2
1.2
1
Forward voltage VF (V)
Reverse current IR (nA)
Forward voltage VF (V)
100°C 25°C
102
10 −2
VF  Ta
1.6
104
103
tW
Non repetitive
102
10
1
10 −1
10 −1
1
Pulse width tW (ms)
10
MA3J142D, MA3J142E
Characteristics charts of MA3J142E
IR  V R
102
104
10
Ta = 150°C
1
100°C
25°C
−20°C
10 −1
10 −2
0
0.2
0.4
0.6
0.8
1.0
Ta = 150°C
100°C
103
102
25°C
1
1.2
0
20
60
80
100
0
−40
120
80
0.8
0.6
0.4
0.2
0
160
Ambient temperature Ta (°C)
200
0
20
40
60
80
100
Reverse voltage VR (V)
SKF00018BED
120
160
200
IF(surge)  tW
1.0
10
120
40
103
Ta = 25°C
IF(surge)
Forward surge current IF(surge) (A)
35 V
6V
102
80
0
Ambient temperature Ta (°C)
f = 1 MHz
Ta = 25°C
103
40
0.4
Ct  VR
Terminal capacitance Ct (pF)
Reverse current IR (nA)
40
1.2
0
10 mA
3 mA
IR  T a
104
IF = 100 mA
0.8
Reverse voltage VR (V)
105
VR = 75 V
1.2
10
Forward voltage VF (V)
1
−40
VF  Ta
1.6
Forward voltage VF (V)
105
Reverse current IR (nA)
Forward current IF (mA)
IF  VF
103
120
tW
Non repetitive
102
10
1
10 −1
10 −1
1
10
Pulse width tW (ms)
3
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Consult our sales staff in advance for information on the following applications:
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(6) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage, and heat radiation characteristics. Otherwise, we will not
be liable for any defect which may arise later in your equipment.
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2003 SEP
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