Switching Diodes MA3J142D (MA142WA), MA3J142E (MA142WK) Silicon epitaxial planar type Unit: mm 0.3+0.1 –0 For switching circuits 5˚ • Two isolated elements contained in one package, allowing highdensity mounting 1 2 (0.65) (0.65) 5˚ Unit Maximum peak reverse voltage Single VR 80 V VRM 80 V IF 100 mA Double Single Peak forward current 150 IFM 225 Double Non-repetitive peak forward surge current * Single mA EIAJ: SC-79 SMini3-F1 Package mA Marking Symbol: • MA3J142D: MO 340 IFSM 500 Double 750 (0.15) Rating 0 to 0.1 Symbol Reverse voltage 0.9±0.1 1.3±0.1 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter (0.425) 1.25±0.1 2.1±0.1 3 ■ Features Forward current 0.15+0.1 –0.05 MA3J142D MA3J142E 1 Cathode 1 Anode 1 2 Cathode 2 Anode 2 3 Anode Cathode • MA3J142E: MU Internal Connection Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C 3 3 Note) *: t = 1 s 1 ■ Electrical Characteristics Ta = 25°C ± 3°C Parameter Symbol Conditions V VR = 75 V 100 nA VR = 0 V, f = 1 MHz 15 pF Reverse voltage VR IR = 100 µA Reverse current IR Ct Min Typ 2 Unit IF = 100 mA 80 V MA3J142E Reverse recovery time * MA3J142D E 1 1.2 VF MA3J142D 2 Max Forward voltage Terminal capacitance D 2 trr MA3J142E IF = 10 mA, VR = 6 V 10 Irr = 0.1 IR , RL = 100 Ω 3 ns Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes. 2. Absolute frequency of input and output is 100 MHz. 3. *: trr measurement circuit Bias Application Unit (N-50BU) Input Pulse tp tr 10% A VR Pulse Generator (PG-10N) Rs = 50 Ω Publication date: March 2004 Wave Form Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.35 ns δ = 0.05 Output Pulse t IF trr t Irr = 0.1 IR IF = 10 mA VR = 6 V RL = 100 Ω Note) The part numbers in the parenthesis show conventional part number. SKF00018BED 1 MA3J142D, MA3J142E Characteristics charts of MA3J142D IF VF IR V R Ta = 150°C 103 −20°C 10 1 Reverse current IR (nA) Forward current IF (mA) Ta = 150°C 100°C 102 10 25°C 10 −1 10 −1 0 0.2 0.4 0.6 0.8 1.0 1.2 IF = 100 mA 0.8 10 mA 3 mA 0.4 0 20 40 60 80 IR T a 10 1 3.0 2.5 2.0 1.5 1.0 0 40 80 120 160 Ambient temperature Ta (°C) 200 0 20 40 60 80 100 Reverse voltage VR (V) SKF00018BED 80 120 160 200 IF(surge) tW 0.5 0 40 103 120 Ta = 25°C IF(surge) Forward surge current IF(surge) (A) Terminal capacitance Ct (pF) 35 V 6V 102 10 −1 −40 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 3.5 VR = 75 V 0 −40 120 Ct VR 4.0 103 100 Reverse voltage VR (V) 104 2 1.2 1 Forward voltage VF (V) Reverse current IR (nA) Forward voltage VF (V) 100°C 25°C 102 10 −2 VF Ta 1.6 104 103 tW Non repetitive 102 10 1 10 −1 10 −1 1 Pulse width tW (ms) 10 MA3J142D, MA3J142E Characteristics charts of MA3J142E IR V R 102 104 10 Ta = 150°C 1 100°C 25°C −20°C 10 −1 10 −2 0 0.2 0.4 0.6 0.8 1.0 Ta = 150°C 100°C 103 102 25°C 1 1.2 0 20 60 80 100 0 −40 120 80 0.8 0.6 0.4 0.2 0 160 Ambient temperature Ta (°C) 200 0 20 40 60 80 100 Reverse voltage VR (V) SKF00018BED 120 160 200 IF(surge) tW 1.0 10 120 40 103 Ta = 25°C IF(surge) Forward surge current IF(surge) (A) 35 V 6V 102 80 0 Ambient temperature Ta (°C) f = 1 MHz Ta = 25°C 103 40 0.4 Ct VR Terminal capacitance Ct (pF) Reverse current IR (nA) 40 1.2 0 10 mA 3 mA IR T a 104 IF = 100 mA 0.8 Reverse voltage VR (V) 105 VR = 75 V 1.2 10 Forward voltage VF (V) 1 −40 VF Ta 1.6 Forward voltage VF (V) 105 Reverse current IR (nA) Forward current IF (mA) IF VF 103 120 tW Non repetitive 102 10 1 10 −1 10 −1 1 10 Pulse width tW (ms) 3 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technical information described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. 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